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1. 发明专利

JPS5230392A ELECTRODE AND IT*S MANUFACTURING PROCESS 失效
公开(公告)号：JPS5230392A
公开(公告)日：1977-03-08
申请号：JP10600575
申请日：1975-09-03
申请人： KOGYO GIJUTSUIN
发明人： MIYAZAKI TAKAO , TAMURA HIROSHI , NAKAMURA NOBUO , KETSUSAKO MITSUNORI , MARUYAMA EIICHI
IPC分类号： H01L31/04 , H01L21/24 , H01L29/40
摘要： PURPOSE:Obtain a substrate for forming thin film for low-cost silicon thin film solar batteries forming low-resistance titanium nitride thin film on a low-cost insulation substrate.

3. 发明专利

JPS6022377A THIN FILM SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6022377A
公开(公告)日：1985-02-04
申请号：JP12935383
申请日：1983-07-18
申请人： KOGYO GIJUTSUIN
发明人： MARUYAMA EIICHI , SHIRAKI YASUHIRO , ISHIZAKA AKITOSHI
IPC分类号： H01L29/80
摘要： PURPOSE:To enable to perform a high speed operation by a method wherein a thin film of high conductivity extending almost vertical to the current direction is positioned at a point located in the vicinity of a gate electrode, and a greater part of the current between a source and a drain passes through said thin layer. CONSTITUTION:A high conductivity thin film 5 extending almost vertical to the direction of current is formed at the position located in the vicinity of a gate electrode 4 in the semiconductor 2 between a source electrode 1 and a drain electrode 3. The current between a source and a drain is mainly carried by the excessive carrier injected from the electrode 1 or the electrode 3 into the semiconductor 2. It is necessary that the layer 5 is formed in the thickness with which the greater part of current between the source and the drain can be passed through the layer 5. This device is extremely useful from the viewpoint wherein mutual conductance is not lowered even when the source-drain interval is narrowed, and a great effect can be obtained when this is used for a high speed semiconductor device.

6. 发明专利

JPH0476217B2 失效
公开(公告)号：JPH0476217B2
公开(公告)日：1992-12-03
申请号：JP6911684
申请日：1984-04-09
申请人： KOGYO GIJUTSUIN
发明人： SHIRAKI YASUHIRO , ISHIZAKA AKITOSHI , MARUYAMA EIICHI
IPC分类号： H01L21/338 , H01L21/203 , H01L21/28 , H01L29/43 , H01L29/45 , H01L29/80 , H01L29/812

7. 发明专利

JPS60152021A CONTAMINATION CHECKING METHOD OF SURFACE OF NICKEL SILICIDE 失效
公开(公告)号：JPS60152021A
公开(公告)日：1985-08-10
申请号：JP733684
申请日：1984-01-20
申请人： KOGYO GIJUTSUIN
发明人： ISHIZAKA AKITOSHI , SHIRAKI YASUHIRO , MARUYAMA EIICHI
IPC分类号： H01L21/28 , H01L21/203
摘要： PURPOSE:To check contamination of NiSi2 films by a method wherein Si thin films are used as protective films of the NiSi2 films, and after the surfaces of the Si films are cleaned, an Si film is grown epitaxially. CONSTITUTION:An Si film 2, an NiSi2 film 3 and an Si film 4 are grown epitaxially on an Si substrate 1, the substrate is taken out in the air, and the Si film 4 and the NiSi2 film 3 are processed into an electrode shape. At this time, processing may be advanced up to reach the Si film 2 or the substrate 1. Moreover, thickness of the Si protective film 4 is made to thickness endurable etching to be generated according to surface cleaning treatment. Then an oxide film 5 is formed. Then the sample is put in a vacuum, and after the film 5 is removed, an Si film 6 is grown epitaxially.

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