专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH09124316A OXIDE SUPERCONDUCTOR AND ITS PRODUCTION 失效
公开(公告)号：JPH09124316A
公开(公告)日：1997-05-13
申请号：JP28093895
申请日：1995-10-27
申请人： KOBE STEEL LTD , SHARP KK , TOKYO GAS CO LTD , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： MASUDA YOSHIO , NAKANISHI KENJI , FUKUOKA ATSUSHI , TANAKA SHOJI
IPC分类号： C04B35/45 , C01B13/32 , C01G1/00 , C01G3/00 , H01B12/00 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To provide a new method for producing an oxide superconductor, capable of producing under a pressure near to the atmospheric pressure the oxide superconductor which could have been produced only under high pressures, and to provide the oxide superconductor. SOLUTION: This method for producing the superconductor comprises subjecting copper hydroxide and a metal alkoxide as starting raw materials to condensation and polymerization reactions in a solution, drying the obtained homogeneous highly reactive amorphous substance as a precursor, calcining the dried precursor, molding the obtained raw material powder into a desired shape, and subsequently sintering the molded product under a pressure near to the atmospheric pressure to produce the oxide superconductor containing a superconducting compound of the formula: CuSr2 (Y, Ca)Cu2 Oy .

2. 发明专利

JPH1130597A METHOD AND APPARATUS FOR DIFFRACTING X RAY, NEUTRON BEAM OR ELECTRON BEAM 失效
公开(公告)号：JPH1130597A
公开(公告)日：1999-02-02
申请号：JP18416397
申请日：1997-07-09
申请人： SHARP KK , HITACHI LTD , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： NAKANISHI KENJI , TSUKAMOTO AKIRA , TANABE KEIICHI
IPC分类号： G01N23/20 , G21K1/06 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To make it possible to diffract electron beams with good S/N in a nondestructive and noncontact manner by projecting X-ray beams directing the beam axis in a constant direction, rotating a sample without changing the angle of the beam axis to a tangent plane of a predetermined area, and forming an image of diffraction beams on an imaging plate. SOLUTION: X rays emitted from an X-ray generation apparatus 1 are turned to X-ray beams 3 of good parallelism and a small wavelength width by a spectroscope 2. The X-ray beams 3 are projected to a surface of a sample 5 with a constant angle of incidence, thereby, an image of diffraction rays is formed on an imaging plate 6. A sample-rotating mechanism 4 rotates the sample 5 without changing the angle between the beam axis of the X-ray beams 3 and the surface of the sample 5. A rotary slit 7 is set between the sample 5 and imaging plate 6, and rotated at a predetermined rotational speed to reduce influences of scattering X rays and fluorescent X rays. Data of the image formed on the imaging plate 6 are read, and output data for every rotation by a predetermined angle width of the sample 5 are obtained and operated.

3. 发明专利

JPH08259231A ELECTRICALLY CONDUCTIVE OXIDE AND PRODUCTION THEREOF 失效
公开(公告)号：JPH08259231A
公开(公告)日：1996-10-08
申请号：JP6737295
申请日：1995-03-27
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SHARP KK , HITACHI LTD
发明人： TSUKAMOTO AKIRA , NAKANISHI KENJI , YAMAUCHI HISAO
IPC分类号： C01G1/00 , C01G3/00 , C30B28/12 , C30B29/22 , H01L39/02 , H01L39/24
摘要： PURPOSE: To obtain an electrically conductive oxide capable of suppressing the deterioration of characteristics at the interface due to counter diffusion, not contg. expensive rare earth elements and undergoing no change of the structure even in the case of more than several hundred nm film thickness by forming a specified crystal structure consisting of Ba, Cu and O as the constituent elements of a 123 type superconductor. CONSTITUTION: This electrically conductive oxide has a crystal structure formed by alternately superposing infinite layer structured parts and atomic layers in which the ratio between Ba atoms and O atoms is 1: Torr pressure of oxygen.

4. 发明专利

JPH1019808A NONDESTRUCTIVE INSPECTION EQUIPMENT AND X-RAY DIFFERACTOMETER 失效
公开(公告)号：JPH1019808A
公开(公告)日：1998-01-23
申请号：JP17948196
申请日：1996-07-09
申请人： SHARP KK , HITACHI LTD , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： NAKANISHI KENJI , TSUKAMOTO AKIRA , TANABE KEIICHI
IPC分类号： G01N23/20 , G01N23/205 , G01N23/223 , G21K1/06 , G21K4/00
摘要： PROBLEM TO BE SOLVED: To realize a nondestructive and noncontact inspection of various material, devices or products by turning a specimen, processing output signs and then sorting an electromagnetic wave or a particle beam signal from the output. SOLUTION: A commercially available X-ray Weissenberg camera 100 is provided with an anti-scattering rotary solar slit (special rotary slit) 4, and an image processor 6 comprising a processor 6A and a memory 6B. X-rays radiated from an X-ray generator 1 is passed through an X-ray condenser 2 to produce an X-ray beam having high parallelism and a short wavelength which is then projected to a sample surface 3. Diffracted X-rays and fluorescent X-rays emitted from the sample are passed through the special rotary slit 4 and only X-rays in the radial direction arrive at an imaging plate 5 and detected. Output information thus detected is delivered to the image processor (counting system) 6 and subjected to image processing including differentiation.

5. 发明专利

JP2000312023A LIGHT RECEIVING ELEMENT 失效
公开(公告)号：JP2000312023A
公开(公告)日：2000-11-07
申请号：JP12110099
申请日：1999-04-28
申请人： SHARP KK
发明人： OGIMOTO YASUSHI , NAKANISHI KENJI , KOJIMA KUNIO
IPC分类号： H01L31/10 , H01L31/02
摘要： PROBLEM TO BE SOLVED: To provide a light receiving element which has a light-receiving sensitivity which copes with reduction in signal quantity in higher density of optical memory as well as shorter wavelength of a light source, while providing fast and low-voltage operation suitable for optical memory light-receiving element, by utilizing a metal insulator transition under light irradiation as an amplifying function. SOLUTION: A lower part electrode 2, photoelectric conversion layer 3, and transparent upper electrode 4 are formed on a substrate 1. The photoelectric conversion layer 3 comprises an oxide thin film representing insulator metal transition, and the electrical conductivity of the photoelectric conversion layer 3 in inter-electrode direction is higher than that in the direction vertical to it, while being resistant to a hot/oxidation atmosphere process, and is provided with the lower electrode 2 which assists crystallinity of the photoelectric conversion layer 3.

6. 发明专利

JPH11289411A IMAGE PROCESSOR 失效
公开(公告)号：JPH11289411A
公开(公告)日：1999-10-19
申请号：JP8844998
申请日：1998-04-01
申请人： SHARP KK
发明人： MORIMOTO AKINORI , NAKAJIMA AKIRA , NAKANISHI KENJI
IPC分类号： G03G15/00 , H04N1/00
摘要： PROBLEM TO BE SOLVED: To allow a user to accurately place an original onto the placing position of an original platen even when the original platen is set higher than the user's eyes by moving an original read section with this side of the original read section as a turning center thereby adusting the inclined angle of the original platen. SOLUTION: An operation panel 2 is provided at the front of a printer main body, a paper feed tray 4 containing fed paper for image forming is provided at the back of the printer main body and this side of a scanner unit 6 whose upper part has a platen cover 5 to cover the original platen id pivotally supported by a unit turning shaft 7 and a rack 8 is provided at the rear side of the scanner unit 6. Then the scanner unit 6 is inclined by being moved (turned) upward with the unit turning shaft 7 as a turning center.

7. 发明专利

JPH11183259A INFRARED DETECTION ELEMENT 失效
公开(公告)号：JPH11183259A
公开(公告)日：1999-07-09
申请号：JP35271597
申请日：1997-12-22
申请人： SHARP KK
发明人： NOJIMA HIDEO , NAKANISHI KENJI
IPC分类号： G01J5/02 , C01G45/00 , G01J5/20
摘要： PROBLEM TO BE SOLVED: To provide an infrared detection element with an improved detection sensitivity, by using an insulator (or a semiconductor)-metal phase transition that Perovskite-type compound manganese oxide indicates, utilizing the fact that the material also responds to a magnetic field, eliminating noise. SOLUTION: A compound Perovskite oxide thin film La0.65 Ca0.35 MnO3 11 is formed on an LaAlO3 substrate 12. A coil 13 is provided close to the La0.65 Ca0.35 MnO3 thin film, an Ac magnetic field is generated from the coil 13 and is applied to the La0.65 Ca0.35 MnO3 thin film, and then resistance that changes due to the incidence of infrared rays is modulated by a magnetic field. Infrared rays are detected by synchronizing the phase of the modulated resistance.

8. 发明专利

JPH0966654A PRINTER DEVICE 失效
公开(公告)号：JPH0966654A
公开(公告)日：1997-03-11
申请号：JP22337395
申请日：1995-08-31
申请人： SHARP KK
发明人： IBUKI KENJI , YAMAGUCHI KOZO , NAKANISHI KENJI
IPC分类号： B41J35/38
摘要： PROBLEM TO BE SOLVED: To eliminate a switch for detecting the presence of an ink ribbon by determining that the ink ribbon is not mounted when a rotational speed detected by a detection means is faster than a rotational speed to be stored in a memory means. SOLUTION: Around an axis of rotation 16 of a clamp arm 10, an image receiving paper is led to a printing position inbetween a platen 8 and a thermal head 7 along a periphery of a drum 9 by regular rotation, and the platen 8 rotates being pulled by the image receiving paper. At this time, a ribbon take-up core 3a rotates so as to take up a ribbon 3, the thermal head 7 which approaches the platen 8 in response to printing information heats the ribbon 3 in between the image receiving paper and the thermal head 7, so that a desired printing is performed on the image receiving paper. Although determination of the absence of the ribbon is performed by the rotational speed, as a rotational speed in a system which uses a timer and a ribbon rotation detecting means is not a direct determination, an average rotational speed within a fixed time is obtained.

9. 发明专利

JP2540229B2 失效
公开(公告)号：JP2540229B2
公开(公告)日：1996-10-02
申请号：JP17057490
申请日：1990-06-27
申请人： SHARP KK
发明人： TOMOMURA YOSHITAKA , KITAGAWA MASAHIKO , NAKANISHI KENJI
IPC分类号： H01L21/203 , H01L21/36 , H01L21/66 , H01L33/06 , H01L33/28 , H01L33/40 , H01L33/00

10. 发明专利

JPH06338633A MANUFACTURE OF II-VI COMPOUND SEMICONDUCTOR THIN FILM AND II-VI COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06338633A
公开(公告)日：1994-12-06
申请号：JP11690193
申请日：1993-05-19
申请人： SHARP KK
发明人： NAKANISHI KENJI , KITAGAWA MASAHIKO , TOMOMURA YOSHITAKA , HIRATA SHINYA
IPC分类号： H01L21/363 , H01L33/04 , H01L33/14 , H01L33/16 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/40 , H01L33/62 , H01S5/00 , H01S5/32 , H01S5/327 , H01L33/00 , H01S3/18
摘要： PURPOSE:To reduce a lattice defect, which is introduced in a single crystal thin film at the initial stage of the growth of the thin film, and to form the single crystal thin film having a flat-interface by a method wherein the orientation of a semiconductor single crystal substrate is set as a face slanted at a specified angle from the face (100) and more than one layer of II-VI compound semiconductor single crystal thin film layers are formed on the substrate. CONSTITUTION:The interior of an ultrahigh vacuum container 1 is evacuated by an ion pump 2, 8 sheets of GaAs (100) oriented substrate turned off by the amount corresponding to the inclination of the face are arranged at the positions between 4a and 4b, corresponding to faces slanted by 2 to 16 degrees from the GaAs (100) face in the direction , on a substrate holder 3 made of molybdenum, and are stuck using a metallic element, In. The substrate is heated by a substrate heater 5 and molecular beams of a Zn molecular beam raw material 6, an Se molecular beam raw material 8 and a Cl molecular beam raw material 10 are respectively emitted toward the substrate from the raw materials 6, 8 and 10. Lastly, the growth time of a thin film is changed and the N-type Cl-doped ZnSe thin film is formed. Accordingly, it becomes possible to obtain a flat thin film having a high crystallinity.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式