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1. 发明专利

JPS623098A PRODUCTION OF SILICON CARBIDE WHISKER 失效
公开(公告)号：JPS623098A
公开(公告)日：1987-01-09
申请号：JP13657885
申请日：1985-06-21
申请人： KOBE STEEL LTD , KANEBO LTD
发明人： KAJI YOSHIRO , YAMAMOTO MASAKAZU , SHIMAZAKI KATSUNORI , YURA KEITA
IPC分类号： B01J23/00 , C30B25/00 , C30B29/62
摘要： PURPOSE:To produce straight whiskers of high purity having a large fiber length and high aspect ratio, by reacting a molded article of a silicon-containing raw material with a powdery carbon raw material in a hydrogen atmosphere while heating. CONSTITUTION:A silicon-containing raw material containing silicon oxide, etc., is molded into a given shape. A catalyst and reaction accelerator are mixed with the above-mentioned molded article and a powdery carbon raw material, e.g. carbon black powder and filled in a reaction vessel. The resultant mixture is reacted in a given atmosphere while heating at >=1,400 deg.C to form silicon carbide whiskers. The reaction product is then taken out and heated at about 600-1,100 deg.C to oxidize and incinerate the unreacted carbon raw material. The resultant whiskers are straight without bending and have a large fiber length and high aspect ratio.

2. 发明专利

JPS61295299A PREPARATION OF SILICON CARBIDE WHISKER 失效
公开(公告)号：JPS61295299A
公开(公告)日：1986-12-26
申请号：JP13657985
申请日：1985-06-21
申请人： KOBE STEEL LTD , KANEBO LTD
发明人： SHIMAZAKI KATSUNORI , KAJI YOSHIRO , YAMAMOTO MASAKAZU , YURA KEITA
IPC分类号： B01J23/00 , C30B25/00 , C30B29/62
摘要： PURPOSE:To prepare SiC whisker contg. no powdery or bent SiC and having high linearity by heating directly a molded body comprising siliceous raw material contg. SiO2 and a molded body comprising carbonaceous raw material contg. C at high temp. in specified H2 atmosphere. CONSTITUTION:A molded body molded previously to a specified shape from SiO2-contg. siliceous raw material (e.g. siliceous stone powder, powdery silica gel, clay, etc.) and a molded body molded previously to a specified shape from C-contg. carbonaceous raw material (e.g. carbon black, powdery active carbon, carbon obtd. by the heat treatment of tar or pitch) are heated at >=1,400 deg.C in H2-contg. atmosphere contg. >=20vol% H2. Formation of SiC whisker by the gaseous phase reaction is prompted. On the other hand, reactions in the solid phase between the SiO2-contg. raw material and the C-contg. raw material or direct gas/solid reaction between SiO2 vapor and solid C-contg. raw material, are retarded. Thus, powdery or bent SiC is scarcely formed and SiC whisker having superior linearity is obtd. at high yield.

3. 发明专利

JPS63159299A PRODUCTION OF SILICON CARBIDE WHISKER 失效
公开(公告)号：JPS63159299A
公开(公告)日：1988-07-02
申请号：JP30512386
申请日：1986-12-20
申请人： KOBE STEEL LTD , KANEBO LTD
发明人： KAJI YOSHIRO , SHIMAZAKI KATSUNORI
IPC分类号： B01J23/74 , C30B25/00 , C30B29/62
摘要： PURPOSE:To produce the titled whisker having high purity and excellent linearity in high yield, by heating SiO2-containing molded article and solid carbon-containing raw material under specific hydrogen-containing atmosphere. CONSTITUTION:A SiO2-containing molded article having >=30wt% SiO2 content and solid carbon-containing raw material containing a catalyst (e.g. Ni) are heated in an atmosphere containing >=70% hydrogen at 1,300-1,700 deg.C for 0.5-30hr.

4. 发明专利

JPS63103897A PRODUCTION OF SILICON CARBIDE WHISKER OF HIGH-QUALITY 失效
公开(公告)号：JPS63103897A
公开(公告)日：1988-05-09
申请号：JP24711686
申请日：1986-10-17
申请人： KOBE STEEL LTD , KANEBO LTD
发明人： KAJI YOSHIRO , SHIMAZAKI KATSUNORI , SAEKI KOZO , YURA KEITA
IPC分类号： C01B31/36 , C30B25/00 , C30B29/62
摘要： PURPOSE:To obtain a high purity SiC whisker having remarkably reduced content of SiO2 of impurity, by reacting moldings of a solid silicon-containing raw material with a powdery carbon-containing raw material while heating, and burning and removing unreacted carbon in the presence of air in a prescribed feed amount. CONSTITUTION:Moldings of a solid silicon-containing raw material such as silica, silica glass sand and agalmatotite, etc., are reacted with a powdery carbon-containing raw material such as carbon black, etc., under H2 gas atmosphere, preferably at 1,500-1,700 deg.C. Then, air of 30-250ml/min per 1g of unreacted carbon in the resultant reaction product is supplied to the reaction product in a muffle furnace at 600-900 deg.C to burn and remove above-mentioned carbon. Thus, a high purity SiC whisker having remarkably reduced SiO2 content as an impurity is obtained.

5. 发明专利

JPS62113799A PRODUCTION OF SILICON CARBIDE WHISKER 失效
公开(公告)号：JPS62113799A
公开(公告)日：1987-05-25
申请号：JP25332785
申请日：1985-11-11
申请人： KOBE STEEL LTD , KANEBO LTD
发明人： KAJI YOSHIRO , SHIMAZAKI KATSUNORI , YAMAMOTO MASAKAZU , YURA KEITA
IPC分类号： C30B29/62 , C30B25/00
摘要： PURPOSE:To obtain high-purity silicon carbide whisker having improved linearity in high yield, by heating a molded article silicon raw material having a specific SiO2 content and a reaction space volume and solid carbon in a hydrogen- containing atmosphere. CONSTITUTION:In a method for producing silicon carbide whisker having high purity and improved linearity by heating a solid silicon raw material containing SiO2 and a solid carbon raw material containing carbon in limited reaction space, (a) a molded article which is obtained by premolding the silicon raw material containing SiO2 into a given shape and has >=30wt% SiO2 content and 0.3-5.0cm3 reaction space volume based on 1cm surface area of part exposed in the reaction space and (b) the solid carbon raw material are heated in a H2-containing atmosphere at >=140 deg.C to give the aimed silicon carbide whisker. In the production of the whisker, a reaction catalyst is preferably used. Iron, nickel, cobalt or their compounds are used as the reaction catalyst.

6. 发明专利

JPS63159298A CONTINUOUS PRODUCTION OF SILICON CARBIDE WHISKER AND APPARATUS THEREFOR 失效
公开(公告)号：JPS63159298A
公开(公告)日：1988-07-02
申请号：JP30512286
申请日：1986-12-20
申请人： KOBE STEEL LTD , KANEBO LTD
发明人： KAJI YOSHIRO
IPC分类号： B01J23/755 , B01J23/74 , C30B25/00 , C30B29/62
摘要： PURPOSE:To continuously produce the titled whisker having high purity and excellent linearity, by transferring a silicon-containing raw material, carbon- containing raw material and reaction catalyst, heating them in a non-oxidizing atmosphere and depositing a low boiling point component by forced cooling the component in a cooling zone. CONSTITUTION:A reaction raw material consisting of silicon-containing raw material, carbon-containing raw material and reaction catalyst is charged into a vessel 42 and the raw material charged vessel is inserted into a reaction furnace from a inlet door 16 through a insert zone 11 under a non-oxidizing gas atmosphere and fed to a heat zone 13 via middle door 17 through a preheating zone 12 under a non-oxidizing gas atmosphere and heated at the prescribed temperature to provide the aimed SiC whisker. Then the vessel 42 is passed through the middle door 17 and fed to a cooling zone 14 wherein a cooling inert gas is introduced from a inlet tubes 18 and 19 and subjected to forced cooling to deposit the low boiling point component on a furnace wall and the deposited component is collected.

7. 发明专利

JPS63103896A PRODUCTION OF SILICON CARBIDE WHISKER OF HIGH-QUALITY 失效
公开(公告)号：JPS63103896A
公开(公告)日：1988-05-09
申请号：JP24711586
申请日：1986-10-17
申请人： KOBE STEEL LTD , KANEBO LTD
发明人： KAJI YOSHIRO , SHIMAZAKI KATSUNORI , YURA KEITA , SAEKI KOZO
IPC分类号： C30B29/62 , C30B25/00 , C30B29/36
摘要： PURPOSE:To obtain a SiC whisker of high-quality having remarkably reduced content of SiO2 of impurity, by producing SiC whisker by heat reaction of moldings of silicon-containing raw material with a powdery carbon-containing raw material and burning an unreacted carbon together with CO2. CONSTITUTION:Moldings of a solid silicon-containing raw material such as silica, silica glass sand, agalmatotite, etc., are reacted with a powdery carbon- containing raw material under H2 gas atmosphere normally at 1,500-1,700 deg.C to provide a SiC whisker. Then, the resultant reaction product is charged into a muffle furnace and unreacted carbon in above-mentioned reaction product is burned at a furnace temperature of 600-1,050 deg.C under only CO2 gas atmosphere or CO2-air mixture gas atmosphere containing >=10vol% CO2. Thus, the SiC whisker having remarkably reduced SiO2 content as an impurity is obtained.

8. 发明专利

JPS62260799A PRODUCTION OF SILICON CARBIDE WHISKER AND DEVICE THEREFOR 失效
公开(公告)号：JPS62260799A
公开(公告)日：1987-11-13
申请号：JP10417086
申请日：1986-05-06
申请人： KOBE STEEL LTD , KANEBO LTD
发明人： KAJI YOSHIRO , SHIMAZAKI KATSUNORI , YURA KEITA , YAMAMOTO MASAKAZU , SAEKI KOZO
IPC分类号： C30B29/62 , C30B25/00
摘要： PURPOSE:To produce high-purity silicon carbide whisker, by holding plural silicon-containing lamellar molded articles at intervals in a square box, packing a powdery carbon raw material into space between the molded articles and heating the raw material in a hydrogen gas atmosphere. CONSTITUTION:Edges of silicon-containing lamellar molded articles 3 (containing >=about 30wt% silicon) are engaged with grooves 5 of a holding fixture 4 attached to a square container 2 having open top and space between the molded articles 3 is charged with a powdery carbon raw material (carbon black, etc.) and, if necessary, a catalyst (e.g. Ni, etc.) and a reaction promoter (sodium chloride, etc.). The square container 2 is heated in a hydrogen gas atmosphere (comprising about 20vol% hydrogen and the rest of a nonoxidizing inert gas) at about 1,400 deg.C for about 30min-10hr and reaction is carried out to form silicon carbide whisker. The reaction product is further heated at about 600-1,100 deg.C to remove the unreacted carbon raw material by combustion. Consequently, high-purity straight silicon carbide whisker having long fibers and high aspect ratio free from flex is obtained in high yield and in high productivity.

9. 发明专利

JPS623100A CONTINUOUS PRODUCTION OF SILICON CARBIDE WHISKER 失效
公开(公告)号：JPS623100A
公开(公告)日：1987-01-09
申请号：JP14002785
申请日：1985-06-25
申请人： KOBE STEEL LTD , KANEBO LTD
发明人： KAJI YOSHIRO , YAMAMOTO MASAKAZU , SHIMAZAKI KATSUNORI , YURA KEITA
IPC分类号： C30B29/62 , C30B25/00
摘要： PURPOSE:To produce whiskers of high purity continuously and in high yield for a long period, by forcing vapor of a reaction accelerator to cool on the outlet side of a reaction furnace and collecting the deposited vapor. CONSTITUTION:A raw material mixture after thermal reaction is transferred from an equalizing zone 26 of a reaction furnace to a cooling zone 11. An inert gas is introduced from an inert gas inlet pipe 12 thereinto on an inlet side (11a) and cooled to a specific temperature by a cooler 21 to stick vapor of a reaction accelerator onto a furnace wall or the cooler 21. The sticking vapor is then collected in a depositing zone 18. After collecting the vapor of the reaction accelerator, the reaction product is then passed through a gas replacing chamber 25 to a taking out zone 23. Excess carbon is oxidized and incinerated to afford the aimed straight silicon carbide whiskers of high purity having a large fiber length and high aspect ratio.

10. 发明专利

JPH0337197A PRODUCTION OF SILICON CARBIDE WHISKER 失效
公开(公告)号：JPH0337197A
公开(公告)日：1991-02-18
申请号：JP17100389
申请日：1989-06-30
申请人： KANEBO LTD , KOBE STEEL LTD
发明人： SAITO MASAHARU , TANIGUCHI YASUHIRO , YURA KEITA , KAJI YOSHIRO
IPC分类号： C30B29/62
摘要： PURPOSE:To readily separate the residual silicon component raw material from formed whiskers by using SiO2 powder or a mixture thereof with Si powder as a silicon component raw material for thermal reaction with a powdery carbon component raw material in a nonoxidizing atmosphere. CONSTITUTION:SiO2 powder alone or a mixture thereof with Si powder is used as a silicon component raw material. The silicon component raw material is thermally reacted with a powdery carbon component raw material in a nonoxidizing atmosphere to form silicon carbide whiskers. The residual part of the aforementioned powdery silicon component raw material is calcined by the above-mentioned method to form lumps, which can be readily separated and removed from the whiskers without using an aqueous solution of hydrofluoric acid that is a poison. In the aforementioned reaction, although addition of the Si to the SiO2 is highly effective in accelerating the synthetic reaction, addition of too much Si deteriorates a calcined state of the silicon component raw material. Thereby, shape is readily lost in separation from the formed whisker cake.

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