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1. 发明专利

JP2000088753A METHOD FOR SIMPLY MEASURING BORON CONCENTRATION OF BORON-DOPED DIAMOND 失效
公开(公告)号：JP2000088753A
公开(公告)日：2000-03-31
申请号：JP26070598
申请日：1998-09-14
申请人： JAPAN SCIENCE & TECH CORP , NAT INST RES INORGANIC MAT
发明人： WATANABE KENJI , USHIZAWA KOICHI , ANDO HISAHIRO , KANDA HISAO , SATO YOICHIRO , SAKAGUCHI ISAO , GAMO MIKA
IPC分类号： G01N21/65
摘要： PROBLEM TO BE SOLVED: To easily measure the amount of boron impurity in a diamond sample as a semiconductor material without any destruction and contact and with a spatial resolution of approximately 1 μm3 in all scenes. SOLUTION: A method is used to simply measure boron concentration of diamond doped with boron as an impurity. In this case the boron concentration is measured without any contact and without damaging a sample at all by judging the spectrum shape and the shape approximation of the sample with a known concentration of the spectrum shape of Raman scattering spectrum band being generated from a Raman shift energy of 500 cm1 to 1,400 cm1 due to the mixture of boron impurity.

2. 发明专利

JP2001007385A ULTRAVIOLET RAY EMITTING DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2001007385A
公开(公告)日：2001-01-12
申请号：JP17472399
申请日：1999-06-21
申请人： JAPAN SCIENCE & TECH CORP , NAT INST RES INORGANIC MAT
发明人： ANDO HISAHIRO , SATO YOICHIRO , GAMO MIKA
IPC分类号： C30B29/04 , H01L21/205 , H01L33/34 , H01L33/40 , H01S5/00 , H01S5/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an ultraviolet ray emitting device capable of emitting ultraviolet rays from a semiconductor p-n junction, and a manufacturing method thereof. SOLUTION: An n-type diamond semiconductor crystal layer 4, doped with S which are to become donor atoms, is grown, e.g. by a plasma CVD on a p-type diamond semiconductor crystal 2 made of a B-doped high-pressure synthesized diamond or natural (IIb) type diamond, thereby forming a p-n junction 6. A forward voltage is applied from the p-n junction 6 to emit ultraviolet rays.

3. 发明专利

JP2001007348A DIAMOND SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JP2001007348A
公开(公告)日：2001-01-12
申请号：JP17472299
申请日：1999-06-21
申请人： JAPAN SCIENCE & TECH CORP , NAT INST RES INORGANIC MAT
发明人： ANDO HISAHIRO , GAMO MIKA , SAKAGUCHI ISAO , SATO YOICHIRO , NOZU EIJI
IPC分类号： C30B29/04 , H01L21/04 , H01L21/205 , H01L21/337 , H01L29/16 , H01L29/808 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a diamond semiconductor device with a P-N junction which is capable of rectifying a current even at a high temperature. SOLUTION: An N-type diamond semiconductor crystal layer 4, doped with sulfur which serves as donor atoms, is formed through a CVD method on a P-type diamond semiconductor crystal 2 which is formed of high-pressure synthetic diamond doped with boron or natural IIb diamond to form a P-N junction 6. This P-N junction 6 is capable of carrying out an satisfactory rectifying action at a high temperature of 500 deg.C.

4. 发明专利

JP2001068011A n-TYPE DIAMOND ELECTRON EMISSIVE ELEMENT AND ELECTRONIC DEVICE 失效
公开(公告)号：JP2001068011A
公开(公告)日：2001-03-16
申请号：JP23896099
申请日：1999-08-25
申请人： JAPAN SCIENCE & TECH CORP , NAT INST RES INORGANIC MAT
发明人： ANDO HISAHIRO , SATO YOICHIRO , GAMO MIKA
IPC分类号： H01J1/304 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a superior n-type diamond electron emitting element and an electronic device capable of being constructed thin and flat, having a smaller threshold voltage for electron emission, and allowing effective use of the negative electron affinity force of diamond. SOLUTION: An n-type diamond electron emitting element includes a high- vacuum vessel 9, which is equipped internally with an n-type diamond semiconductor 4 formed on a board 2, a surface 6 in NEA state formed by hydrogenating the surface of the diamond semiconductor, so that a hydrogenated surface is generated, an anode electrode 7 provided in the neighborhood of the mentioned surface, and a cathode electrode 8 formed on the partial surface of the n-type diamond semiconductor, whereby voltage is impressed using the semiconductor as cold cathode so that electrons are emitted.

5. 发明专利

JP2004010383A PROCESS FOR SYNTHESIZING DIAMOND-LIKE CARBON FILM 审中-公开
公开(公告)号：JP2004010383A
公开(公告)日：2004-01-15
申请号：JP2002163300
申请日：2002-06-04
申请人： JAPAN SCIENCE & TECH CORP , NAT INST FOR MATERIALS SCIENCE
发明人： ANDO HISAHIRO , GAMO MIKA
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide a process for synthesizing a diamond-like carbon film which can be synthesized at a low cost and can be applied, in a uniform thickness, onto a member having a surface of a given shape, and a process for synthesizing the diamond-like carbon film having a p- or n-type conductivity. SOLUTION: The member 3 is placed on a member holder 5 of a synthesizer, an organic liquid 10 is filled, an N 2 gas is fed through a valve 8 to replace air remaining inside the synthesizer by the N 2 gas, and the member 3 is heated by applying electric current via an electrode 4. Bubbles comprising a gas of the organic liquid 10 are generated from and cover the surface of the member 3. The organic liquid 10 is cooled and maintained at a temperature equal to or lower than its boiling point using a water-cooling means 2, and the organic liquid 10 in a vapor phase is returned to a liquid tank 1 using a condensation means 7. By maintaining the synthesizer in such state for a fixed time determined according to the desired thickness of the diamond-like carbon film, the diamond-like carbon film is synthesized on the member 3. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2003154271A SYNTHESIS GAS PRODUCTION CATALYST, METHOD FOR PREPARING THE SAME AND METHOD FOR PRODUCING SYNTHESIS GAS 审中-公开
公开(公告)号：JP2003154271A
公开(公告)日：2003-05-27
申请号：JP2001354034
申请日：2001-11-20
申请人： JAPAN SCIENCE & TECH CORP , NAT INST FOR MATERIALS SCIENCE
发明人： SUZUKI TOSHIMITSU , NAKAGAWA KIYOHARU , KAJITA CHIAKI , IKENAGA NAOKI , GAMO MIKA , ANDO HISAHIRO
IPC分类号： C01B3/22 , B01J21/18 , B01J23/755 , B01J32/00 , B01J37/02 , B01J37/18
摘要： PROBLEM TO BE SOLVED: To provide an Ni catalyst effective to produce hydrogen by decomposi tion of methanol. SOLUTION: The diamond carrying Ni catalyst prepared in such a way as to carry 200 mg catalyst and 5 wt.% (expressed in terms of oxides) catalyst components is reduced with hydrogen at 500 deg.C for 1 hr immediately before use. When 10-11 mmol/hr methanol is supplied and synthesis gas is produced at 300 deg.C reaction temperature in 1 hr reaction time, such a high methanol conversion rate as 78.9% is yielded and such a high hydrogen to carbon monoxide ratio as 1.7 is also obtained. The amounts of by-products such as methane and carbon dioxide are also small.

7. 发明专利

JP2003146631A METHOD FOR MANUFACTURING FUNCTIONAL NANOMATERIAL USING ENDOTHERMIC REACTION 审中-公开
公开(公告)号：JP2003146631A
公开(公告)日：2003-05-21
申请号：JP2001346418
申请日：2001-11-12
申请人： JAPAN SCIENCE & TECH CORP , NAT INST FOR MATERIALS SCIENCE
发明人： MITSUI TADASHI , SEKIGUCHI TAKASHI , GAMO MIKA , CHO AHI , ANDO HISAHIRO
IPC分类号： B82B3/00 , C01B21/064 , C01B31/02 , C01B31/36
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing with which a single-walled carbon nanotube, a single-walled boron nitride nanotube, a single-walled silicon carbide nanotube, a multi-walled carbon nanotube with the controlled number of walls, a multi-walled boron nitride nanotube with the controlled number of walls, a multi-walled silicon carbide nanotube with the controlled number of walls, an endohedral metallofullerene and an endohedral metallofullerene with the controlled number of walls are produced in excellent yields. SOLUTION: In producing the multi-walled carbon nanotube 3 with a chemical vapor growth method or with a liquid growth method, the single-walled carbon nanotube 4 is produced by adding an auxiliary reactive agent (H2 S) for an endothermic reaction other than main reactants (CH4 , H2 ) of the chemical vapor growth method or the liquid growth method.

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