发明专利
JP2013074078A Cleaning device and cleaning method for component of vapor deposition device
审中-公开
基本信息:
- 专利标题: Cleaning device and cleaning method for component of vapor deposition device
- 专利标题(中):清洗装置和清洗方法用于蒸发沉积装置的组分
- 申请号:JP2011211714 申请日:2011-09-28
- 公开(公告)号:JP2013074078A 公开(公告)日:2013-04-22
- 发明人: AKIYAMA TOSHIO , MORI YUJI
- 申请人: Japan Pionics Co Ltd , 日本パイオニクス株式会社
- 专利权人: Japan Pionics Co Ltd,日本パイオニクス株式会社
- 当前专利权人: Japan Pionics Co Ltd,日本パイオニクス株式会社
- 优先权: JP2011211714 2011-09-28
- 主分类号: H01L21/205
- IPC分类号: H01L21/205 ; C23C16/44
摘要:
PROBLEM TO BE SOLVED: To provide a cleaning device, along with a cleaning method, for a component of a vapor deposition device incorporating a susceptor that holds, for free rotation, a plurality of substrate holders by way of a rotary mechanism with bearing, capable of efficiently removing deposits or sticking substance that sticks to a vapor deposition device component such as a substrate holder and a susceptor after vapor deposition.SOLUTION: The cleaning device includes a housing part for a susceptor and a substrate holder, means for rotating a susceptor and/or means for rotating a substrate holder, a heater, a cleaning gas introduction part, and a cleaning gas exhausting part. The susceptor which holds the substrate holder having been used for vapor deposition is stored in the cleaning device, and the susceptor and/or the substrate holder is rotated and cleaning gas is introduced to remove deposits or sticking substance that sticks to at the time of vapor deposition.
摘要(中):
要解决的问题:为了提供清洁装置以及清洁方法,用于包括基座的气相沉积装置的部件,所述基座通过旋转机构自由旋转地保持多个基板保持器,所述旋转机构具有 轴承,能够有效地去除气相沉积后粘附到诸如基板保持器和基座的气相沉积装置部件的沉积物或粘附物质。 解决方案:清洁装置包括用于基座和基板保持器的壳体部分,用于旋转基座的装置和/或用于旋转衬底保持器的装置,加热器,清洁气体引入部分和清洁气体排出部分 。 保持已经用于气相沉积的衬底保持器的基座被存储在清洁装置中,并且基座和/或衬底保持器旋转,并且引入清洁气体以去除蒸气时粘附的沉积物或粘附物质 沉积 版权所有(C)2013,JPO&INPIT
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/20 | ....半导体材料在基片上的沉积,例如外延生长 |
----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的,即化学沉积 |