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1. 发明专利

JP2010172169A Automatic wiring method of electric control board 有权
标题翻译：电控板自动接线方法
公开(公告)号：JP2010172169A
公开(公告)日：2010-08-05
申请号：JP2009014624
申请日：2009-01-26
申请人： Ishikawa Prefecture , Kanazawa Inst Of Technology , Lion Power Kk , ライオンパワー株式会社 , 学校法人金沢工業大学 , 石川県
发明人： TAKASE KEISHIRO , WASADA SUSUMU , KITAMORI HIDEAKI , YAMATO HIROICHI , NAMIKAWA TOSHIHARU , UEDA YOSHIHIRO , YONEZAWA YUJI , KASAHARA TAKEHIRO , MORIMOTO YOSHITAKA
IPC分类号： H02G1/06
摘要： PROBLEM TO BE SOLVED: To provide an automatic wiring method of an electric control board by which the automatic wiring of the electric control board can be realized by supplying electric wires whose both end terminals are processed to the working range of a robot. SOLUTION: A chassis plate 31 is set inside a common working range of a first robot 10, which has an electric screw driver and an electric wire clamp, and a second robot 20, which has a roller unit having the sending-out and gripping functions of the electric wire. By controlling the drive of the first and second robot 10, 20, predetermined electric wires are automatically connected and wired between terminals of electrical parts 32, 32, ... on the chassis plate 31. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种电气控制板的自动布线方法，通过将电气控制板的两端端子的电线加工到机器人的工作范围，可以实现电气控制板的自动布线。解决方案：底盘31设置在具有电动螺丝刀和电线夹的第一机器人10的公共工作范围内，第二机器人20具有辊单元，其具有发送和电线的夹紧功能。通过控制第一和第二机器人10,20的驱动，预定的电线自动地连接并连接在底板31上的电气部件32,32，...的终端之间。（C）2010， JPO＆INPIT

2. 发明专利

JP2011172331A Piezoelectric actuator mechanism 有权
标题翻译：压电致动器机构
公开(公告)号：JP2011172331A
公开(公告)日：2011-09-01
申请号：JP2010031954
申请日：2010-02-17
申请人： Ishikawa Prefecture , Nikko Co , Sigma Koki Kk , Tokyo Institute Of Technology , シグマ光機株式会社 , ニッコー株式会社 , 国立大学法人東京工業大学 , 石川県
发明人： TAKANO MASAHIRO , HIROSAKI KENICHI , SHINTANI RYUJI , YOSHIDA YUTA , NAMIKAWA TOSHIHARU , NAKANO KOICHI , OSADA TAKUYA , MAKINO SHO , ICHIMURA SATORU , YOSHIDA TAKASHI , ISHIDA MASAYUKI , KAWAI HIROSHI , TAKIMOTO MIKIO , NAKAMURA KENTARO
IPC分类号： H02N2/00
CPC分类号： H02N2/123 , H02N2/103 , H02N2/126
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric actuator mechanism which is suitable for the adjustment of a mirror holder and the automatic operation of the positioning of a movable table of a direct-drive stage in an optical system, short in overall length and small in size, and can perform accurate position/angle adjustment and positioning. SOLUTION: The piezoelectric actuator mechanism includes: a screw-driven feeding mechanism composed of a feeding screw 11 and a feeding screw nut 14; a disc-shaped rotor 17 attached to the rear end face of the feeding screw nut 14; an ultrasonic motor 18 having a piezoelectric vibrator 21 which comes into contact with the circumference face of the rotor 17; and a driven mounting section which is pressed to the tip of the feeding screw 11 by a spring force, and displaced and positioned by the feeding operation of the feeding screw. The driven mounting section can be made to serve as, for example, the mirror holder 1 used in the optical system and the movable table 21 of the direct-drive stage 10. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于调整反射镜保持器的压电致动器机构以及在光学系统中定位直接驱动平台的可移动台的自动操作，总长度短尺寸小，可以进行精确的位置/角度调整和定位。解决方案：压电致动器机构包括：由进给螺杆11和进给螺母14组成的螺杆驱动进给机构; 安装在进给螺母14的后端面的圆盘状的转子17; 具有与转子17的圆周面接触的压电振动器21的超声波马达18; 以及由弹簧力压入进给螺杆11的前端的从动安装部，通过进给螺杆的供给动作而移位和定位。驱动安装部分可以用作例如在光学系统中使用的镜保持器1和直接驱动级10的可移动台21.版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2003049271A Catalytic chemical vapor growth method and catalytic chemical vapor growth apparatus 审中-公开
标题翻译：催化化学蒸气生长法和催化化学蒸气生长装置
公开(公告)号：JP2003049271A
公开(公告)日：2003-02-21
申请号：JP2001236006
申请日：2001-08-03
申请人： Ishikawa Pref Gov , Japan Advanced Inst Of Science & Technology Hokuriku , 北陸先端科学技術大学院大学長 , 石川県
发明人： MASUDA ATSUSHI , NAMIKAWA TOSHIHARU
IPC分类号： B01J19/00 , C23C16/46
摘要： PROBLEM TO BE SOLVED: To stabilize the properties of a thin film in a catalytic chemical vapor growth method in which a thin film deposition precursor is formed by catalytic decomposition reaction of gas molecules on the surface of a metal or metallic compound.
SOLUTION: A member which transmits light and is impervious to gas molecules is disposed between a metal or metallic compound heated to a high temperature and a substrate for forming a thin film, the substrate is heated with transmitted light before thin film deposition while being protected from damage by gas molecules and then the member which transmits light and is impervious to gas molecules is removed. A change in the temperature of the substrate is suppressed when thin film deposition is started.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了在催化化学气相生长法中稳定薄膜的性能，其中通过气体分子在金属或金属化合物的表面上的催化分解反应形成薄膜沉积前体。解决方案：透射光并且不透气体的构件设置在加热到高温的金属或金属化合物和用于形成薄膜的基底之间，在薄膜沉积之前用透射光加热衬底，同时被保护除去气体分子的损伤，然后透过光并且不透气体分子的部件。当薄膜沉积开始时，基板的温度变化被抑制。

4. 发明专利

JP2006057121A Method for producing silicon nitride film, and film for display device 有权
标题翻译：用于生产氮化硅薄膜的方法和用于显示装置的薄膜
公开(公告)号：JP2006057121A
公开(公告)日：2006-03-02
申请号：JP2004238090
申请日：2004-08-18
申请人： Ishikawa Pref Gov , Ishikawa Seisakusho Ltd , Japan Science & Technology Agency , Kuraray Co Ltd , 株式会社クラレ , 株式会社石川製作所 , 独立行政法人科学技術振興機構 , 石川県
发明人： IGARI TOKUO , NAMIKAWA TOSHIHARU , BUKE AKIRA , MUROI SUSUMU
IPC分类号： C23C16/452 , B32B9/00 , C23C16/34 , H01L51/50 , H05B33/04
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon nitride film superior in a gas barrier property, at a low temperature.
SOLUTION: The method for producing the silicon nitride film comprises: a decompression step of decompressing the inside of a vacuum chamber 2 into a vacuum state, which has a plastic film 15 arranged on a coolable substrate holder 4 and a heatable tungsten wire 6 arranged above the plastic film 15 therein, with a pressure reducing device 3; a gas introduction step of introducing a silane gas, ammonia gas and hydrogen gas into the vacuum chamber 2 which has been decompressed in the decompression step, with a shower head 5; a gas decomposition step of contacting the gases introduced into the vacuum chamber 2 in the gas introduction step, with the tungsten wire 6 while heating the tungsten wire 6, to decompose the gases; and a film-forming step of forming the silicon nitride film on the surface of the plastic film 15, by depositing the decomposed species of the gas obtained in the gas decomposition step, on the surface of the plastic film 15 while cooling the substrate holder 4.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种在低温下制造阻气性优异的氮化硅膜的方法。解决方案：用于制造氮化硅膜的方法包括：减压步骤，将真空室2的内部减压成真空状态，其具有设置在可冷却的基板保持件4上的塑料膜15和可加热的钨丝 6，其上设置有塑料膜15，具有减压装置3; 气体引入步骤，用于在喷淋头5中将硅烷气体，氨气和氢气引入到在减压步骤中减压的真空室2中; 气体分解步骤，在气体引入步骤中将导入真空室2的气体与钨丝6同时加热钨丝6，分解气体; 以及通过在气体分解步骤中获得的气体的分解物质沉积在塑料膜15的表面上同时冷却基板保持件4而在塑料膜15的表面上形成氮化硅膜的成膜步骤（C）2006年，JPO＆NCIPI

5. 发明专利

JP2004292877A Silicon nitride film and method for manufacturing the same 有权
公开(公告)号：JP2004292877A
公开(公告)日：2004-10-21
申请号：JP2003085721
申请日：2003-03-26
申请人： Ishikawa Pref Gov , Ishikawa Seisakusho Ltd , Japan Advanced Inst Of Science & Technology Hokuriku , Japan Science & Technology Agency , Toshiichi Niki , 敏一仁木 , 北陸先端科学技術大学院大学長 , 株式会社石川製作所 , 独立行政法人科学技術振興機構 , 石川県
发明人： NAMIKAWA TOSHIHARU , BUKE AKIRA , KOIZUMI AKIO , MUROI SUSUMU , MASUDA ATSUSHI , UMEMOTO HIRONOBU , MATSUMURA HIDEKI , NIKI TOSHIICHI
IPC分类号： B32B9/00 , C01B21/06 , C23C16/42 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a silicon nitride film which has a high barrier property, transparency and an excellent adhesion property and a manufacturing method for high-speed deposition at a low temperature.
SOLUTION: The silicon nitride film is deposited by a chemical vapor deposition method, more particularly a catalytic CVD method. The film is deposited at a substrate temperature ≤160°C and the composition thereof, when expressed as SiN
x , is 1.05≤x≤1.33, the refractive index is 1.8 to 1.96. NH bonds exist in the film. At the time of the deposition, monosilane, ammonia and hydrogen are supplied, are catalytically decomposed by an electrically heated wire and are deposited on a substrate of ≤160°C. At this time, the flow rate ratios of the monosilane, the ammonia and the hydrogen are so specified that the ammonia is 1 to 30, and the hydrogen is 5 to 400 to 1 monosilane.
COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JPH02221120A PRODUCTION OF SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH02221120A
公开(公告)日：1990-09-04
申请号：JP4272689
申请日：1989-02-22
申请人： SHIBUYA KOGYO CO LTD , ISHIKAWA PREFECTURE , SHIMIZU TATSUO , MORIMOTO AKIJI
发明人： OTSUBO SHIGERU , NAMIKAWA TOSHIHARU , YONEZAWA YASUTO , SHIMIZU TATSUO , MORIMOTO AKIJI
IPC分类号： C04B41/87 , C01G1/00 , C01G3/00 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To lower the substrate heating temp. by vaporizing the raw material contg. a Ba-Y-Cu-O-based superconducting material, continuously depositing the vaporized material and continuously irradiating the deposit with an excimer laser. CONSTITUTION:A vacuum vessel 1 is depressurized, O2 is supplied, a heater 8 is energized to heat the substrate 2 of crystalline Si, etc., a pulse excimer laser device 11 is simultaneously oscillated, the pelletized raw material 3 of Ba-Y-Cu-O-based superconducting material such as Ba2YCu2Ox is irradiated with an excimer laser L1 through a splitter 12 and a lens 13 to vaporize the raw material 3, and a superconducting material 14 is deposited on the substrate 2. The superconducting material 14 deposited on the substrate 2 is irradiated with the excimer laser L2 split by the splitter 12 through a mirror 16, a galvanomirror 17 and a lens 18, hence the deposit is heated, and a thin film 19 having about 0.8-2mum thickness is formed. The thin film is then annealed at low temp. in an O2 atmosphere to complete the superconducting thin film.

7. 发明专利

JPH01290576A PRODUCTION OF SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH01290576A
公开(公告)日：1989-11-22
申请号：JP12018888
申请日：1988-05-17
申请人： SHIBUYA KOGYO CO LTD , ISHIKAWA PREFECTURE
发明人： NAMIKAWA TOSHIHARU , YONEZAWA YASUTO , OTSUBO SHIGERU
IPC分类号： C04B41/80 , C01G1/00 , C01G3/00 , C04B41/87 , C23C14/08 , C23C14/24 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To reduce the treating time by annealing a Y-Ba-Cu-O based material vapor-deposited on an SrTiO3 substrate at high temp. with a CO2 pulse laser beam in the presence of O2 to form a thin film of Y1Ba2Cu3Ox. CONSTITUTION:A Y-Ba-Cu-O based material is vapor-deposited on a substrate consisting of SrTiO3. The product is then annealed at high temp. with a CO2 pulse laser beam in the presence of O2, and then annealed at low temp. As a result, high-temp. annealing is applied in an extremely short time, and the treating time is drastically reduced.

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