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1. 发明专利

JP2012182463A Semiconductor device having drift region and drift control region 有权
标题翻译：具有DRIFT区域和DRIFT控制区域的半导体器件
公开(公告)号：JP2012182463A
公开(公告)日：2012-09-20
申请号：JP2012085846
申请日：2012-04-04
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： FRANK FIRSCH , ANTON MAUDER , HANS-JOACHIM SCHULZE , STEFAN SEDLMAIER , ARMIN WILLMEROTH , ZUNDEL MARKUS , HIRLER FRANZ , MITTAL ALLUNYAI
IPC分类号： H01L29/78 , H01L21/336 , H01L27/04 , H01L29/06 , H01L29/47 , H01L29/739 , H01L29/872
CPC分类号： H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device having a drift path or a drift region with low on-resistance.SOLUTION: A semiconductor device comprises: a drift region 2 of a first conductivity type in a semiconductor base material; a drift control region 3 that is disposed adjacent to the drift region 2 in the semiconductor base material and is composed of a semiconductor material; an accumulation dielectric 4 disposed between the drift region 2 and the drift control region 3; a base-material region 8; a drain region 5 that is isolated from the base-material region 8 and is adjacent to the accumulation dielectric 4; a source region 9 isolated from the drift region 2 by the base-material region 8; a gate electrode 15 insulated from the semiconductor base material by a gate dielectric 16, and extending from the source region 9 to the drift region 2 adjacently to the base-material region 8; a drain electrode 11 contacting the drain region 5; and a semiconductor region 27 complementarily doped to the drain region 5. The semiconductor region 27 is disposed between the drain electrode 11 and the drift region 2 and is adjacent to the drain electrode 11.
摘要翻译：要解决的问题：提供具有低导通电阻的漂移路径或漂移区域的功率半导体器件。解决方案：半导体器件包括：半导体基底材料中的第一导电类型的漂移区域2; 漂移控制区域3，其设置在半导体基材中与漂移区域2相邻并且由半导体材料构成; 布置在漂移区域2和漂移控制区域3之间的积聚电介质4; 基材区域8; 与基材区域8隔离并与蓄电介质4相邻的漏极区域5; 通过基材区域8与漂移区域2隔离的源极区域9; 栅电极15，通过栅极电介质16与半导体基底材料绝缘，并且从源极区域9延伸到与基底材料区域8相邻的漂移区域2; 与漏区5接触的漏电极11; 半导体区域27配置在漏极电极11和漂移区域2之间，并与漏电极11相邻。版权所有：（C）2012，JPO＆INPIT

2. 发明专利

JP2014078741A Semiconductor device with improved on-resistance value 有权
标题翻译：具有改进的电阻值的半导体器件
公开(公告)号：JP2014078741A
公开(公告)日：2014-05-01
申请号：JP2013259245
申请日：2013-12-16
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： BERGER RUDOLF , HIRLER FRANZ , MAUDER ANTON , SCHULZE HANS-JOACHIM , SIEMIENIEC RALF
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06
CPC分类号： H01L29/66719 , H01L29/0878 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/513 , H01L29/66734 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with an improved on-resistance value.SOLUTION: A semiconductor device comprises: a source; a drain; and a gate configured to selectively pass current between the source and the drain. The semiconductor device comprises a drift zone between the source and the drain and a first field plate is adjacent to the drift zone. The semiconductor device comprises a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent to the drift zone.
摘要翻译：要解决的问题：提供具有改善的导通电阻值的半导体器件。解决方案：半导体器件包括：源极; 排水以及配置为选择性地在源极和漏极之间传递电流的栅极。半导体器件包括源极和漏极之间的漂移区，第一场板与漂移区相邻。半导体器件包括将第一场板与漂移区电隔离并将电介质层中的电荷接近靠近漂移区的电介质层的界面的电介质层。

3. 发明专利

JP2013175754A Horizontal hemt 有权
标题翻译：水平HEMT
公开(公告)号：JP2013175754A
公开(公告)日：2013-09-05
申请号：JP2013079755
申请日：2013-04-05
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： HIRLER FRANZ , RIEGER WALTER , ZUNDEL MARKUS
IPC分类号： H01L21/337 , H01L21/336 , H01L21/338 , H01L27/095 , H01L29/778 , H01L29/78 , H01L29/808 , H01L29/812
CPC分类号： H01L29/778 , H01L29/0619 , H01L29/0623 , H01L29/0653 , H01L29/1075 , H01L29/2003 , H01L29/402 , H01L29/41766 , H01L29/66462 , H01L29/7786
摘要： PROBLEM TO BE SOLVED: To provide a horizontal HEMT having high avalanche breakdown strength.SOLUTION: A horizontal HEMT 5 includes a substrate 10, a first layer 11 having a first conductivity type semiconductor material and arranged at least partially on the substrate 10, a second layer 12 having a semiconductor material and arranged at least partially on the first layer 11, and a third layer 13 having a semiconductor material and arranged at least partially within the first layer 11.
摘要翻译：要解决的问题：提供具有高雪崩击穿强度的水平HEMT。解决方案：水平HEMT 5包括基板10，具有第一导电类型半导体材料并且至少部分地布置在基板10上的第一层11，第二具有半导体材料并且至少部分地布置在第一层11上的层12以及具有半导体材料并且至少部分地布置在第一层11内的第三层13。

4. 发明专利

JP2011091406A Lateral hemt, and method for manufacturing the same 有权
标题翻译：横向HEMT及其制造方法
公开(公告)号：JP2011091406A
公开(公告)日：2011-05-06
申请号：JP2010239152
申请日：2010-10-26
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： ZUNDEL MARKUS , HIRLER FRANZ , WALTER RIEGER
IPC分类号： H01L29/812 , H01L21/338 , H01L29/778
CPC分类号： H01L29/404 , H01L29/2003 , H01L29/66462 , H01L29/7786
摘要： PROBLEM TO BE SOLVED: To provide a lateral HEMT, and a method for manufacturing the same.
SOLUTION: In one embodiment, this lateral HEMT includes a first layer containing a semiconducting material, and a second layer containing a semiconductor material and arranged at least partially on the first layer. The lateral HEMT further includes a passivation layer, and a drift region including a lateral width w
d . The lateral HEMT further includes at least one field plate, the at least one field plate being arranged at least partially on the passivation layer in a region of the drift region, and including a lateral width w
f , wherein w
f d .
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供横向HEMT及其制造方法。解决方案：在一个实施例中，该横向HEMT包括含有半导体材料的第一层和包含半导体材料并且至少部分地布置在第一层上的第二层。横向HEMT还包括钝化层，以及包括横向宽度w d 的漂移区域。横向HEMT还包括至少一个场板，所述至少一个场板至少部分地布置在漂移区域的区域中的钝化层上，并且包括横向宽度w SB，其中瓦特˚F ð。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2013214773A Semiconductor device structure having vertical dielectric layer 有权
标题翻译：具有垂直电介质层的半导体器件结构
公开(公告)号：JP2013214773A
公开(公告)日：2013-10-17
申请号：JP2013146627
申请日：2013-07-12
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： MAUDER ANTON , SEDLMAIER STEFAN , ERICHSEN RALF , WEBER HANS , HAEBERLEN OLIVER , HIRLER FRANZ
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06
CPC分类号： H01L21/76224 , H01L27/0629 , H01L29/0646 , H01L29/0653 , H01L29/407 , H01L29/66734 , H01L29/7804 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can avoid charging of a drift control zone 21.SOLUTION: A semiconductor device of a present embodiment comprises: a semiconductor body 100 including a first surface 101, a second surface 102' an edge 103 and an edge region 104 adjacent to the edge 103; a drift zone 11 and a drift control zone 21 which are dielectrically isolated from each other by a first dielectric layer 31 extending in a perpendicular direction to the semiconductor body 100; a first connection zone 200 arranged in a region of the second surface 102' of the semiconductor body 100, which contacts the drift zone 11 and the edge region 104; a third dielectric layer 43 arranged between the drift zone 11 and the first connection zone 200; and a rectifier cell 72 connected between a connection zone 24 and a connection zone 71 of the edge region 104. The drift control zone 21 is dielectrically isolated from the edge region 104 at least by a second dielectric layer 32.
摘要翻译：要解决的问题：提供一种可以避免漂移控制区21的充电的半导体器件。解决方案：本实施例的半导体器件包括：半导体本体100，其包括第一表面101，第二表面102'，边缘103 以及与边缘103相邻的边缘区域104; 漂移区11和漂移控制区21，它们通过沿垂直于半导体本体100的方向延伸的第一介电层31彼此隔离; 布置在接触漂移区11和边缘区104的半导体本体100的第二表面102'的区域中的第一连接区200; 布置在漂移区11和第一连接区200之间的第三电介质层43; 以及连接在边缘区域104的连接区域24和连接区域71之间的整流器单元72.漂移控制区域21至少通过第二电介质层32与边缘区域104介电隔离。

6. 发明专利

JP2012186479A Semiconductor element with drift region and drift control region 有权
标题翻译：具有DRIFT区域和DRIFT控制区域的半导体元件
公开(公告)号：JP2012186479A
公开(公告)日：2012-09-27
申请号：JP2012085845
申请日：2012-04-04
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： FRANK FIRSCH , ANTON MAUDER , HANS-JOACHIM SCHULZE , STEFAN SEDLMAIER , ARMIN WILLMEROTH , ZUNDEL MARKUS , HIRLER FRANZ , MITTAL ALLUNYAI
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/06 , H01L29/47 , H01L29/786 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element, especially a power semiconductor element, with a drift route/drift region having a low on resistance.SOLUTION: The semiconductor element has: a semiconductor body 100; a drift region 2 made of a semiconductor material and provided in the semiconductor body 100; a drift control region 3 made of a semiconductor material, and placed, at least in sections, adjacent to the drift region 2, and including a connection electrode 19; an accumulation dielectric 4 placed between the drift region 2 and the drift control region 3; a first element region 8; a second element region 5 placed away from the first element region 8, the drift region 2 being placed between the second element region 5 and the first element region 8; and a capacitive element 50 connected between the connection electrode 19 of the drift control region 3 and the first element region 8.
摘要翻译：要解决的问题：提供具有导通电阻低的漂移路径/漂移区的半导体元件，特别是功率半导体元件。解决方案：半导体元件具有：半导体本体100; 设置在半导体本体100中的由半导体材料制成的漂移区域2; 由半导体材料制成的漂移控制区域3，至少部分地与漂移区域2相邻并且包括连接电极19; 放置在漂移区2和漂移控制区3之间的积聚电介质4; 第一元件区域8; 远离第一元件区域8放置的第二元件区域5，漂移区域2放置在第二元件区域5和第一元件区域8之间; 以及连接在漂移控制区域3的连接电极19与第一元件区域8之间的电容元件50.版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011124576A Semiconductor device with improved on-resistance value 有权
标题翻译：具有改进的电阻值的半导体器件
公开(公告)号：JP2011124576A
公开(公告)日：2011-06-23
申请号：JP2010274176
申请日：2010-12-09
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： BERGER RUDOLF , HIRLER FRANZ , MAUDER ANTON , SCHULZE HANS-JOACHIM , SIEMIENIEC RALF
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66719 , H01L29/0878 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/513 , H01L29/66734 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with an improved on-resistance value.
SOLUTION: A semiconductor device includes a source, a drain, and a gate configured to selectively pass current between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent to the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent to the drift zone.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有改善的导通电阻值的半导体器件。解决方案：半导体器件包括源极，漏极和被配置为选择性地在源极和漏极之间传递电流的栅极。半导体器件包括在源极和漏极之间的漂移区和与漂移区相邻的第一场板。半导体器件包括将第一场板与漂移区电隔离的电介质层，并且电介质层内的电荷靠近与漂移区相邻的电介质层的界面。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010062557A Semiconductor device with trench-gate structure, and method of manufacturing the same 审中-公开
标题翻译：具有闸门结构的半导体器件及其制造方法
公开(公告)号：JP2010062557A
公开(公告)日：2010-03-18
申请号：JP2009195339
申请日：2009-08-26
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： HIRLER FRANZ
IPC分类号： H01L29/78 , H01L29/41 , H01L29/423 , H01L29/49
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0878 , H01L29/407 , H01L29/42368 , H01L29/4238
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a gate charge, furthermore, a gate capacitance without extending a distance between cell pitches or trench structures.
SOLUTION: At least one gate electrode 15 inside a trench-gate structure 16 controls at least one vertical switching channel through at least one body zone. The trench-gate structure 16 includes a trench 26 having a side wall. The gate electrode 15 is insulated in the region of the body zone 20 from the side wall by a trench-oxide region thicker than a thin gate-oxide region and the gate oxide.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够减小栅极电荷的半导体器件，此外，提供栅极电容而不延长单元间距或沟槽结构之间的距离。解决方案：沟槽栅极结构16内的至少一个栅电极15通过至少一个体区控制至少一个垂直切换通道。沟槽栅结构16包括具有侧壁的沟槽26。栅电极15在体区20的区域与侧壁通过比薄栅氧化物区域和栅极氧化物更厚的沟槽氧化物区域绝缘。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2013153209A Horizontal hemt 有权
标题翻译：水平HEMT
公开(公告)号：JP2013153209A
公开(公告)日：2013-08-08
申请号：JP2013079756
申请日：2013-04-05
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： HIRLER FRANZ , RIEGER WALTER , ZUNDEL MARKUS
IPC分类号： H01L21/337 , H01L21/336 , H01L21/338 , H01L27/095 , H01L27/098 , H01L29/778 , H01L29/78 , H01L29/808 , H01L29/812
CPC分类号： H01L29/778 , H01L29/0619 , H01L29/0623 , H01L29/0653 , H01L29/1075 , H01L29/2003 , H01L29/402 , H01L29/41766 , H01L29/66462 , H01L29/7786
摘要： PROBLEM TO BE SOLVED: To provide a horizontal HEMT having a high avalanche breakdown strength.SOLUTION: The horizontal HEMT includes: a substrate 10 having a first conductive type semiconductor; a first layer 11 having the first conductive type semiconductor, and disposed at least partially on the substrate 10; a second layer 12 having a semiconductor and disposed at least partially on the first layer 11; a third layer 13 having the first conductive type semiconductor, and disposed at least partially below the first layer 11; a fourth layer 20 having a second conductive type semiconductor complementary to the first conductive type, and disposed at least partially below the third layer 13; a first electrode 14; a second electrode 15; and a gate electrode 16. a third layer 13 disposed at least partially in the first layer 11. The first electrode 14 extends from the second layer 12 to the third layer 13 in a vertical direction, and the second electrode 15 extends from the second layer 12 partially into the substrate 10 in the vertical direction. An insulation layer 21 is arranged between the second electrode 15 and the third layer 13, and between the second electrode 15 and the fourth layer 20.
摘要翻译：要解决的问题：提供具有高雪崩击穿强度的水平HEMT。解决方案：水平HEMT包括：具有第一导电类型半导体的基板10; 具有第一导电类型半导体并且至少部分地设置在基板10上的第一层11; 具有半导体并且至少部分地设置在第一层11上的第二层12; 具有第一导电型半导体的第三层13，并且至少部分地设置在第一层11的下方; 第四层20具有与第一导电类型互补的第二导电类型半导体，并且至少部分地设置在第三层13的下方; 第一电极14; 第二电极15; 以及栅电极16.至少部分地设置在第一层11中的第三层13.第一电极14在垂直方向上从第二层12延伸到第三层13，并且第二电极15从第二层 12在垂直方向上部分地进入衬底10。绝缘层21设置在第二电极15和第三层13之间以及第二电极15和第四层20之间。

10. 发明专利

JP2010267958A Horizontal hemt and method of manufacturing horizontal hemt 有权
标题翻译：水平HEMT和制造水平HEMT的方法
公开(公告)号：JP2010267958A
公开(公告)日：2010-11-25
申请号：JP2010097156
申请日：2010-04-20
申请人： Infineon Technologies Austria Ag , インフィネオンテクノロジーズオーストリアアクチエンゲゼルシャフト
发明人： HIRLER FRANZ , RIEGER WALTER , ZUNDEL MARKUS
IPC分类号： H01L29/778 , H01L21/336 , H01L21/338 , H01L29/78 , H01L29/786 , H01L29/812
CPC分类号： H01L29/778 , H01L29/0619 , H01L29/0623 , H01L29/0653 , H01L29/1075 , H01L29/2003 , H01L29/402 , H01L29/41766 , H01L29/66462 , H01L29/7786
摘要： PROBLEM TO BE SOLVED: To provide a horizontal HEMT having a high avalanche breakdown strength, and to provide a manufacturing method thereof. SOLUTION: The horizontal HEMT includes a substrate 10, a first layer 11 to serve as a first conduction type channel disposed on the substrate, and a second layer 12 to constitute an electron supply layer disposed at least partially on the first layer 11. The horizontal HEMT further includes a second conduction type semiconductor substance which is complementary to the first conductive type, and a third layer 13 disposed at least partially in the first layer 11. A PN diode is therefore formed between the first layer and the third layer, and the PN diode has a lower breakdown voltage than the horizontal HEMT, so that the HEMT is protected from a high electric field and prevented from being degraded. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有高雪崩击穿强度的水平HEMT，并提供其制造方法。解决方案：水平HEMT包括衬底10，用作设置在衬底上的第一导电类型沟道的第一层11和构成至少部分地设置在第一层11上的电子供给层的第二层12 水平HEMT还包括与第一导电类型互补的第二导电类型半导体物质和至少部分地设置在第一层11中的第三层13.因此，在第一层和第三层之间形成PN二极管，并且PN二极管具有比水平HEMT更低的击穿电压，使得HEMT被保护免受高电场并且防止劣化。版权所有（C）2011，JPO＆INPIT

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