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1. 发明专利

JP2009010318A Method of manufacturing capacitor 审中-公开
标题翻译：制造电容器的方法
公开(公告)号：JP2009010318A
公开(公告)日：2009-01-15
申请号：JP2007337412
申请日：2007-12-27
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： LEE KI-JUNG , RO SAISEI , YEOM SEUNG JIN , SO KANSO , KIL DEOK-SIN , KIN EIDAI , KIM JIN-HYOCK , DO KWAN-WOO
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L28/90 , H01L27/10852
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor which can prevent leaning phenomenon that may cause a storage node bridge during wet-etching to form a cylindrical storage node structure and drying process.
SOLUTION: The method includes the steps of exposing an upper part of a cylindrical storage node 25 formed on a substrate 21 having a cell region and a peripheral circuit region, forming a mesh type support 26C of amorphous carbon supporting the exposed upper portion of the storage node 25, forming a capping film on the support 26C, opening a peripheral circuit region and removing the capping film in the peripheral circuit region using the mask to cover the cell region, removing the support 26C for the mask and the peripheral circuit region, removing the capping film remaining in the cell region and a sacrificial film remaining in the cell region and the peripheral circuit region, and removing the support remaining in the cell region.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以防止在湿蚀刻期间可能导致存储节点桥接的倾斜现象形成圆柱形存储节点结构和干燥过程的电容器的制造方法。解决方案：该方法包括以下步骤：将形成在具有单元区域和外围电路区域的基板21上的圆柱形存储节点25的上部暴露，形成支撑暴露的上部的非晶碳的网状支撑件26C ，在支撑体26C上形成覆盖膜，打开外围电路区域，并使用掩模移除外围电路区域中的覆盖膜以覆盖电池区域，去除用于掩模和外围电路的支撑件26C 去除残留在单元区域中的封盖膜和残留在单元区域和外围电路区域中的牺牲膜，以及去除残留在单元区域中的载体。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008010866A Manufacturing method of cylinder type capacitor utilizing amorphous carbon layer 有权
标题翻译：使用不规则碳层的气缸型电容器的制造方法
公开(公告)号：JP2008010866A
公开(公告)日：2008-01-17
申请号：JP2007160301
申请日：2007-06-18
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： BOKU KIZEN , RO SAISEI , KIL DEOK-SIN , SO KANSO , YEOM SEUNG JIN , KIM JIN-HYOCK , LEE KI-JUNG
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10852
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacitor of a semiconductor device capable of preventing a bridge phenomenon between adjacent storage nodes in a wet dip-out process, even if the height of a cylinder is made high.
SOLUTION: The method includes the steps of: forming an isolation structure of a lamination structure, with an intermediate layer inserted on a semiconductor substrate on which a contact plug is formed; forming an open area for opening a part of the contact plug by etching the isolation structure; forming a storage node 32A on the open area; forming a patterned intermediate layer 27A in which a part of the isolation structure is etched and a part of the storage node 32A is surrounded; supporting the storage node 32A; removing a residual part of the isolation structure; and removing the patterned intermediate layer and exposing all of an inner wall and an outer wall of the storage node 32A.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：即使使气缸的高度变高，也能够提供能够防止湿式浸出处理中的相邻存储节点之间的桥接现象的半导体装置的电容器的制造方法。解决方案：该方法包括以下步骤：形成层压结构的隔离结构，其中中间层插入到形成有接触插塞的半导体衬底上; 通过蚀刻隔离结构形成用于打开接触塞的一部分的开放区域; 在所述开放区域上形成存储节点32A; 形成图案化的中间层27A，其中隔离结构的一部分被蚀刻并且存储节点32A的一部分被包围; 支持存储节点32A; 去除隔离结构的残留部分; 并且移除图案化的中间层并且暴露存储节点32A的所有内壁和外壁。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007281407A Method for forming zirconium oxide film of tetragonal structure, and method of manufacturing capacitor provided with the film 有权
标题翻译：用于形成四面体结构的氧化锆薄膜的方法以及用薄膜制造电容器的方法
公开(公告)号：JP2007281407A
公开(公告)日：2007-10-25
申请号：JP2006180955
申请日：2006-06-30
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： KIL DEOK-SIN , SO KANSO , YEOM SEUNG-JIN , BOKU KIZEN , RO SAISEI , KIM JIN-HYOCK
IPC分类号： H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45527 , H01L21/31641 , H01L28/40 , Y02T50/67
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a zirconium oxide film having tetragonal structure of high dielectricity constant and stableness at high temperature, and to provide a method of manufacturing a capacitor comprising the film.
SOLUTION: A tetragonal zirconium oxide film is formed on a substrate by repeating a unit cycle in which injection and purging of zirconium source and injection and purging of an oxidant are continuously performed in a unit atom vapor deposition chamber where the substrate is arranged. Otherwise, a unit cycle is repeated which consists of a first cycle in which injection and purging of zirconium source and injection and purging of oxidant are continuously performed in the unit atom vapor deposition chamber, and a second cycle in which injection of the oxidant (EXTRA_O
3 ) and purging are continuously performed. In the unit atom vapor deposition process, the temperature of a substrate, concentration of the oxidant, and exposure condition of the oxidant are adjusted.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种在高温下形成具有高介电常数和稳定性的四边形结构的氧化锆膜的方法，并提供一种制造包含该膜的电容器的方法。解决方案：通过重复单元循环在基板上形成四方晶氧化锆膜，其中在单元原子气相沉积室中连续进行锆源的注入和净化以及氧化剂的注入和净化，其中基板布置。否则，重复单元循环，其包括在单元原子气相沉积室中连续执行锆源的注入和净化以及氧化剂的注入和净化的第一循环，以及其中注入氧化剂（EXTRA_O ＆lt; SB＆gt; 3＆lt; SB＆gt;）并进行清洗。在单位原子气相沉积工艺中，调节衬底的温度，氧化剂的浓度和氧化剂的暴露条件。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007180491A Method of manufacturing capacitor of semiconductor device 有权
标题翻译：制造半导体器件电容器的方法
公开(公告)号：JP2007180491A
公开(公告)日：2007-07-12
申请号：JP2006246826
申请日：2006-09-12
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： YEOM SEUNG JIN , KIL DEOK-SIN , KIM JIN-HYOCK , BOKU KIZEN , SO KANSO , RO SAISEI
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/91
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor of semiconductor device which can improve step coverage by shortening the incubation time when forming storage node. SOLUTION: The manufacturing method of the capacitor of the semiconductor device includes the steps of: forming an insulating film 35 over a semiconductor substrate 31 including an interlayer dielectric 32, a storage node contact plug 33, and an etch stop film 34; changing a front surface of the insulating film 35 into a state in which metal substance is easy to absorb by flushing a metal source to the insulating film 35 after having formed a hole 36; forming the storage node of metal system on the flushed insulating film 35; and forming a dielectric film and a plate electrode in order on the storage node of the metal system. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的电容器的方法，其可以通过缩短形成存储节点时的孵育时间来改善步骤覆盖。解决方案：半导体器件的电容器的制造方法包括以下步骤：在包括层间电介质32，存储节点接触插塞33和蚀刻停止膜34的半导体衬底31上形成绝缘膜35; 在形成孔36之后，通过将金属源冲击到绝缘膜35，将绝缘膜35的前表面改变为容易吸收金属物质的状态; 在冲洗绝缘膜35上形成金属系统的存储节点; 并且在金属系统的存储节点上依次形成电介质膜和平板电极。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2002217314A METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR ELEMENT 审中-公开
公开(公告)号：JP2002217314A
公开(公告)日：2002-08-02
申请号：JP2001198608
申请日：2001-06-29
申请人： HYNIX SEMICONDUCTOR INC
发明人： KIM KYONG-MIN , RI SHOMIN , LIM CHAN , SO KANSO
IPC分类号： C23C16/18 , C23C16/40 , H01L21/02 , H01L21/316 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a capacitor manufacturing method of a semiconductor element which can prevent a lower diffusion preventing film from being oxidized, by reducing oxygen as reaction gas for forming an Ru film at the time of forming the Ru film as a lower electrode. SOLUTION: The capacitor manufacturing method of the semiconductor element includes a stage where a semiconductor substrate 11 on which prescribed structure is formed is installed in a reaction furnace and the reaction furnace is maintained to prescribed temperature and pressure, a stage where the raw material substance of Ru, oxygen and NH3 gas are made to flow into the reaction furnace and the Ru film 17 is formed on the semiconductor substrate, and a stage where the Ru film is patterned, the lower electrode is formed and the dielectric film and the upper electrode 14 are formed on whole structure.

6. 发明专利

JP2003017592A Capacitor forming method of semiconductor element 审中-公开
标题翻译：电容元件形成方法
公开(公告)号：JP2003017592A
公开(公告)日：2003-01-17
申请号：JP2002171140
申请日：2002-06-12
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクター
发明人： KIM KYONG-MIN , SO KANSO , BOKU KIZEN
IPC分类号： H01L21/02 , H01L21/285 , H01L21/314 , H01L21/316 , H01L21/768 , H01L21/8242 , H01L27/108
CPC分类号： H01L28/75 , H01L21/28562 , H01L21/3144 , H01L21/31604 , H01L21/76888 , H01L28/40 , H01L28/56
摘要： PROBLEM TO BE SOLVED: To provide a capacitor forming method of a semiconductor element capable of lessening damage and forming a capacitor excellent in electric characteristic when a TaON or Ta
2 O
5 dielectric film high in a dielectric constant is formed.
SOLUTION: The capacitor forming method includes a step for forming a lower electrode 110 on a semiconductor board 100, a step for forming a Ta compound-based dielectric film 115 on the lower electrode, a step for forming a first TiN film for an upper electrode by an atomic layer growth method on the dielectric film 115, a step for oxidizing the first TiN film, and a step for forming a second TiN film 130 for the upper electrode by a PVD method on an oxidized first TiN film 125.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种当形成高介电常数的TaON或Ta 2 O 5电介质膜时，能够减小损伤的半导体元件的电容器形成方法和形成电特性优异的电容器。解决方案：电容器形成方法包括在半导体板100上形成下电极110的步骤，在下电极上形成Ta化合物基电介质膜115的步骤，用于形成用于上电极的第一TiN膜的步骤通过电介质膜115上的原子层生长法，氧化第一TiN膜的步骤和通过PVD法在氧化的第一TiN膜125上形成用于上部电极的第二TiN膜130的步骤。

7. 发明专利

JP2002026273A METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JP2002026273A
公开(公告)日：2002-01-25
申请号：JP2001090328
申请日：2001-03-27
申请人： HYNIX SEMICONDUCTOR INC
发明人： KIM KYONG-MIN , SO KANSO , KIN TOSHUN
IPC分类号： H01L21/285 , H01L21/02 , H01L21/28 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing the capacitor of a semiconductor element capable of improving the electric characteristics of a capacitor by improving surface roughness when forming an Ru film as a lower electrode. SOLUTION: This method for manufacturing the capacitor of a semiconductor element comprises: a step for evaporating a first Ru film on a semiconductor substrate on which a prescribed structure is formed; a step for processing the first Ru film by exciting the mixed plasma of Ar and H2; a step for forming a secondarily evaporated Ru film by evaporating a second Ru film on the first Ru film, and for forming a lower electrode by carrying out patterning; a step for forming a Ta2O5 film on the overall structure; and a step for forming a TiN film on the overall structure, and for forming an upper electrode by carrying out patterning.

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