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1. 发明专利

JP2013031864A Solder ball and semiconductor device using solder ball 审中-公开
标题翻译：焊球和半导体器件使用焊球
公开(公告)号：JP2013031864A
公开(公告)日：2013-02-14
申请号：JP2011168436
申请日：2011-08-01
申请人： Hitachi Metals Ltd , 日立金属株式会社
发明人： FUJIWARA SHINICHI , CHIWATA NOBUHIKO , FUJIYOSHI MASARU , WAKANO MOTOKI , IKEDA YASUSHI
IPC分类号： B23K35/14 , H01L21/60 , H05K1/18 , H05K3/34
CPC分类号： H01L2224/16225
摘要： PROBLEM TO BE SOLVED: To provide a solder ball which can prevent the disconnection from occurring in a copper pad part while preventing a reaction of copper and tin between the copper pad part and the solder ball from being promoted; and to provide a semiconductor device using the solder ball.SOLUTION: This solder ball is configured by including a core material coated with a metal on the surface of a metal or resin; a first metal film layer formed on the surface of the core material and comprising nickel, titanium or chromium as a main component; a second metal film layer formed on the outer periphery of the first metal film layer and comprising copper as a main component; and a third metal film layer on the outer periphery of the second metal film layer and comprising tin as a main component. The semiconductor device is configured by connecting a first electrode pad on a first member and a second electrode pad on a second member by using this solder ball.
摘要翻译：要解决的问题：提供一种防止在铜焊盘部分发生断开的焊球，同时防止铜焊盘部分和焊球之间的铜和锡的反应被促进; 并提供使用焊球的半导体器件。
解决方案：该焊球通过在金属或树脂的表面上包括涂有金属的芯材构成; 形成在所述芯材的表面上并且包含镍，钛或铬作为主要成分的第一金属膜层; 第二金属膜层，形成在第一金属膜层的外周上，并以铜为主要成分; 以及在所述第二金属膜层的外周上并且包含锡作为主要成分的第三金属膜层。通过使用该焊球将第一构件上的第一电极焊盘和第二构件上的第二电极焊盘连接起来，构成半导体器件。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012099642A Semiconductor device, electronic component using the same, and method of manufacturing them 审中-公开
标题翻译：半导体器件，使用其的电子元件及其制造方法
公开(公告)号：JP2012099642A
公开(公告)日：2012-05-24
申请号：JP2010246170
申请日：2010-11-02
申请人： Hitachi Metals Ltd , 日立金属株式会社
发明人： TANIE HISAFUMI , CHIWATA NOBUHIKO , WAKANO MOTOKI , FUJIYOSHI MASARU , FUJIWARA SHINICHI
IPC分类号： H01L21/60 , H01L23/12
CPC分类号： H01L2224/0401 , H01L2924/10253 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device suppressing occurrence of an electromigration phenomenon to ensure a high connection reliability, and having a flip-chip connection part that ensures a heat radiation property and a conductivity equivalent to or greater than the prior art, and to provide an electronic component using the same.SOLUTION: A semiconductor device has a flip-chip connection part in which a solder ball incorporating a spherical metal core is arranged. The semiconductor device has a land electrically connected with the solder ball, and extraction wiring electrically connected with the land. The metal core is made of a material having higher thermal conductivity and electrical conductivity compared with the solder. A spherical dent is formed on a surface of the land which is connected with the solder ball. A distance from the center of the dent to the extraction wiring is longer than a distance from the center of the land to the extraction wiring.
摘要翻译：要解决的问题：提供一种抑制电迁移现象发生的半导体器件，以确保高连接可靠性，并且具有确保散热性能和导电率等于或大于先前值的倒装芯片连接部件并提供使用其的电子部件。解决方案：半导体器件具有倒装芯片连接部分，其中布置了包含球形金属芯的焊球。半导体器件具有与焊球电连接的焊盘，以及与焊盘电连接的引出布线。与焊料相比，金属芯由具有较高导热性和导电性的材料制成。在与焊球连接的焊盘的表面上形成球形凹痕。从凹陷中心到提取布线的距离比距离中心到提取布线的距离长。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011187635A Semiconductor device, and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011187635A
公开(公告)日：2011-09-22
申请号：JP2010050615
申请日：2010-03-08
申请人： Hitachi Metals Ltd , 日立金属株式会社
发明人： FUJIWARA SHINICHI , CHIWATA NOBUHIKO , FUJIYOSHI MASARU , WAKANO MOTOKI
IPC分类号： H01L21/60 , H01L23/12 , H05K3/32 , H05K3/34
CPC分类号： H01L2224/16225
摘要： PROBLEM TO BE SOLVED: To increase long-lasting connection reliability to improve electro-migration resistance in a semiconductor package. SOLUTION: An electrode pad of a semiconductor element 1 is connected with an electrode pad 20 on a substrate 21 with a solder ball. The solder ball is constituted of a metal core part 11, and a solder part 10 which is disposed around the metal core part 11 and is lower that the core part 11 in rigidity and melting point. The solder ball is connected with the semiconductor element 1 by reflow. Then, the semiconductor element 1 with the solder ball attached is ultrasonic-connected with the substrate 21, and a metal core 11 is directly connected with an electrode 20 on the substrate 21 side, thereby attaining connection reduced in thermal stress and resistance. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提高持久的连接可靠性，以提高半导体封装中的抗迁移电阻。解决方案：半导体元件1的电极焊盘用焊球与电极焊盘20连接在基板21上。焊球由金属芯部11和设置在金属芯部11周围的芯部11的刚性和熔点下方的焊料部10构成。焊球通过回流与半导体元件1连接。然后，安装有焊球的半导体元件1与基板21超声波连接，并且金属芯11与基板21侧的电极20直接连接，从而实现热应力和电阻的降低。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2014082526A Method for manufacturing electronic apparatus 有权
标题翻译：制造电子设备的方法
公开(公告)号：JP2014082526A
公开(公告)日：2014-05-08
申请号：JP2014013949
申请日：2014-01-29
申请人： Hitachi Metals Ltd , 日立金属株式会社
发明人： FUJIWARA SHINICHI , CHIWATA NOBUHIKO , FUJIYOSHI MASARU , WAKANO MOTOKI
IPC分类号： H01L21/60 , H01L23/12 , H05K3/32 , H05K3/34
CPC分类号： H01L2224/16225
摘要： PROBLEM TO BE SOLVED: To increase long-term connection reliability to improve electro-migration resistance in a semiconductor package.SOLUTION: An electrode pad of a semiconductor element 1 is connected with an electrode pad 20 on a substrate 21 with a solder ball. The solder ball comprises: a metal core part 11; and a solder part 10 which is disposed around the metal core part 11 and is lower than the core part 11 in rigidity and a melting point. The solder ball is connected with the semiconductor element 1 by reflow. Then, the semiconductor element 1 attached with the solder ball is ultrasonic-connected with the substrate 21, and the metal core part 11 is directly connected with the electrode pad 20 on the substrate 21 side, thereby connection with reduced thermal stress and reduced resistance can be attained.
摘要翻译：要解决的问题：增加长期连接可靠性以提高半导体封装中的电迁移电阻。解决方案：半导体元件1的电极焊盘用焊球与电极焊盘20连接在基板21上。焊球包括：金属芯部11; 以及焊接部10，其以刚性和熔点设置在金属芯部11周围并且低于芯部11。焊球通过回流与半导体元件1连接。然后，将安装有焊料球的半导体元件1与基板21超声波连接，金属芯部11与基板21侧的电极焊盘20直接连接，从而与热应力降低和电阻降低连接实现。

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