专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013012577A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2013012577A
公开(公告)日：2013-01-17
申请号：JP2011144130
申请日：2011-06-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIRAKAWA SHINJI , SAKANO JUNICHI
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7816 , H01L21/26586 , H01L21/266 , H01L29/0653 , H01L29/0878 , H01L29/1045 , H01L29/1095 , H01L29/66681
摘要： PROBLEM TO BE SOLVED: To provide a technique which allows for achievement of stabilized circuit operation according to the specifications of the design and enhancement of the output current density, by suppressing variation in the channel length or the threshold voltage of an intermediate and high breakdown voltage MOSFET in an integrated circuit (semiconductor device) assuming mixed mounting of micro CMOS and intermediate and high breakdown voltage MOSFET.SOLUTION: The width (channel) of a channel region CH is decreased. More specifically, when the width of the channel region CH overlapping a gate electrode G in the plane is L, and the thickness of the gate electrode G is t, the channel region CH is formed so that the width L of the channel region CH is equal to 1/5-1 time of the thickness t of the gate electrode G. Consequently, the width L of the channel region CH can be decreased and variation in threshold voltage can be reduced.
摘要翻译：要解决的问题：提供一种通过抑制中间体的通道长度或阈值电压的变化来实现根据设计规格和输出电流密度的增强实现稳定的电路操作的技术，以及假设混合安装了微CMOS和中高压击穿电压MOSFET，集成电路（半导体器件）中的高击穿电压MOSFET。解决方案：通道区域CH的宽度（通道）减小。更具体地说，当与平面中的栅电极G重叠的沟道区CH的宽度为L，栅电极G的厚度为t时，沟道区CH形成为使沟道区CH的宽度L为等于栅电极G的厚度t的1 / 5-1时间。因此，可以减小沟道区CH的宽度L，并且可以减小阈值电压的变化。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2008270378A Manufacturing method for semiconductor device, semiconductor device using the same and power converter 有权
标题翻译：半导体器件的制造方法，使用其的功率转换器的半导体器件
公开(公告)号：JP2008270378A
公开(公告)日：2008-11-06
申请号：JP2007108803
申请日：2007-04-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SAKANO JUNICHI , HARA KENJI , SHIRAKAWA SHINJI , ARAI TAIKA , MORI MUTSUHIRO
IPC分类号： H01L29/786 , H01L21/8234 , H01L27/06 , H01L27/08
CPC分类号： H01L29/7394 , H01L29/0878 , H01L29/66325 , H01L29/66681 , H01L29/7824
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device preventing an increase in the size of the semiconductor device due to the dispersion of a semiconductor wafer, being a smaller type and having a high performance and a power converter using the semiconductor device.
SOLUTION: In a manufacturing method for the SOI type high withstand voltage semiconductor device formed on a supporting board through an insulating film, impurities are introduced to the whole surface of the board by an ion implantation method and a drift layer is formed to an SOI board having a p-type or n-type impurity concentration of 2E14 cm
-3 or less as an active layer for the semiconductor device. Consequently, the small-sized semiconductor device having a small withstand voltage dispersion is manufactured.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其防止由于半导体晶片的分散而导致的半导体器件的尺寸的增加，该半导体晶片是较小的类型并且具有高性能，并且使用该半导体器件的功率转换器。解决方案：在通过绝缘膜形成在支撑板上的SOI型高耐受电压半导体器件的制造方法中，通过离子注入法将杂质引入到整个板的整个表面，并且形成漂移层作为半导体器件的有源层，具有2E14cm 3以上的p型或n型杂质浓度的SOI板。因此，制造具有小的耐电压色散的小型半导体器件。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2007028694A Rotary electric machine controller 审中-公开
标题翻译：旋转电机控制器
公开(公告)号：JP2007028694A
公开(公告)日：2007-02-01
申请号：JP2005202518
申请日：2005-07-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAMAUCHI TATSUMI , SHIRAKAWA SHINJI , INABA MASAMITSU , TAKAMI KAZUHISA , IWAMURA MASAHIRO , SAITO AKIHIRO
IPC分类号： H02P29/02 , F02D29/02
CPC分类号： F02N11/04 , F02N11/0814 , F02N11/108
摘要： PROBLEM TO BE SOLVED: To provide a rotary electric machine controller which can deal with occurrence even of an emergent abnormal condition leading to dangerous abnormal condition if it is not recovered immediately. SOLUTION: The rotary electric machine controller comprises a plurality of upper arm switching elements 6 connected between a plurality of stator winding terminals of a rotary electric machine 2 and high potential of a battery 3 in order to perform powering or power generation, a plurality of lower arm switching elements connected between the plurality of stator winding terminals and low potential of the battery 3 in order to perform powering or power generation, and a section 13 for controlling the powering or power generation by turning the plurality of upper arm switching elements 6 and the plurality of lower arm switching elements 7 on/off, respectively. When a plurality of faults occur in the rotary electric machine controller (ISG) 1, the control section 13 performs protection against any one of the plurality of faults preferentially. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种旋转式电机控制器，即使在不立即恢复的情况下，即使出现异常情况也可能导致危险的异常状况。解决方案：旋转电机控制器包括连接在旋转电机2的多个定子绕组端子和电池3的高电位之间的多个上臂开关元件6，以便进行供电或发电，连接在多个定子绕组端子之间的多个下臂开关元件和电池3的低电位以进行供电或发电，以及用于通过转动多个上臂开关元件来控制供电或发电的部分13 6和多个下臂开关元件7分别开/关。当在旋转电机控制器（ISG）1中发生多个故障时，控制部分13优先对多个故障中的任何一个进行保护。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006203995A Mos rectifier, method of driving mos rectifier, motor-generator, and electric vehicle using it 审中-公开
标题翻译： MOS整流器，驱动MOS整流器的方法，电动发电机和使用其的电动车
公开(公告)号：JP2006203995A
公开(公告)日：2006-08-03
申请号：JP2005011643
申请日：2005-01-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： INABA MASAMITSU , SHIRAKAWA SHINJI , IWAMURA MASAHIRO
IPC分类号： H02M7/12 , H02P9/00 , H02P9/04
CPC分类号： H02M7/219 , H02P9/30 , H02P2101/45
摘要： PROBLEM TO BE SOLVED: To provide a MOS rectifier, which is possible of rectifying operation even at open phase of phase voltage, a method of driving the MOS rectifier, and an electric vehicle using it. SOLUTION: A V-phase upper arm open phase detecting circuit 142U outputs a permission signal to allow the conduction of a lower arm MOSFET 111 of U phase in case that the phase voltage of V phase is higher than the positive electrode potential of a battery. A U-phase lower arm driver circuit 131 drives a U-phase lower arm MOSFET 111 with this permission signal. A V-phase arm open phase detecting circuit 142L outputs a permission signal to allow the conduction of an upper arm MOSFET 101 of U phase in case that the phase voltage of V phase is lower than the negative electrode potential of the battery. An upper arm driver circuit 121 of U phase drives the U-phase upper arm MOSFET 101 with this permission signal. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供即使在相电压的开路阶段也可以整流操作的MOS整流器，驱动MOS整流器的方法和使用它的电动车辆。解决方案：V相上臂开路相位检测电路142U输出允许信号，以允许V相的相电压高于正相电位的U相的下臂MOSFET 111的导通一个电池 U相下臂驱动电路131利用该许可信号驱动U相下臂MOSFET111。在V相的相电压低于电池的负极电位的情况下，V相臂断开相位检测电路142L输出允许信号，以允许U相的上臂MOSFET 101的导通。 U相的上臂驱动电路121利用该许可信号驱动U相上臂MOSFET 101。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2004194382A Semiconductor device and power conversion device 有权
标题翻译：半导体器件和电源转换器件
公开(公告)号：JP2004194382A
公开(公告)日：2004-07-08
申请号：JP2002356606
申请日：2002-12-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： FUJINO SHINICHI , INNAMI TOSHIYUKI , GOTO HIROO , SHIGETA SATORU , SHIRAKAWA SHINJI
IPC分类号： H02M1/00 , H02M7/48
CPC分类号： H01L2224/49111 , H01L2924/19107
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a power conversion device which realize size reduction, high efficiency, and low inductance. SOLUTION: This device comprises positive electrode and negative electrode DC terminals (3, 2) formed out of conductor plates, a semiconductor switch (13a), output terminals (4, 5, 6), and capacitors (29a, 29b) for relieving a voltage fluctuation when the semiconductor switch (13a) is driven. An insulator (11) is put between the positive electrode DC terminal (3) and the negative electrode DC terminal (2) for lamination, each of which is directly connected to poles corresponding to the capacitors (29a, 29b). COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供实现尺寸减小，高效率和低电感的半导体器件和功率转换器件。解决方案：该装置包括由导体板形成的正极和负极直流端子（3,2），半导体开关（13a），输出端子（4,56）和电容器（29a，29b）用于在半导体开关（13a）被驱动时缓解电压波动。在正电极直流端子（3）和用于层压的负极直流端子（2）之间放置绝缘体（11），每个直流端子直接连接到与电容器（29a，29b）对应的极点。版权所有（C）2004，JPO＆NCIPI

6. 发明专利

JP2002373971A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2002373971A
公开(公告)日：2002-12-26
申请号：JP2002090685
申请日：2002-03-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIRAKAWA SHINJI , MISHIMA AKIRA , MASUNO KEIICHI , INNAMI TOSHIYUKI , FUJINO SHINICHI , ANAMI HIROYASU , OCHIAI YOSHITAKA
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2224/48227 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces an inductance of wirings for bridge-connecting semiconductor switches and which realizes a reduction in size. SOLUTION: The semiconductor device comprises the two controllable bridge- connected semiconductor switches 13a, 13b; an output terminal; positive and negative DC terminals 2 and 3; conductor layers 12, 17 and 19 and insulating layers 16, and 18 alternatively laminated to form an insulating board 15a, and having a conductor section in which the semiconductor switches are bridge- connected between DC terminals on a surface and in an inner layer; and a current route (dotted line). In the current route, a front surface for holding the layer 16 by a conductor 20 passing through the layer 16 interposed between the front surface and the conductor layers 12, 17 of the inner layer is electrically connected to the layers 12, 17 of the inner layer, and a current flows to a bridge circuit for mounting the two switches on an insulating board flows in the direction opposed between the layers 12 and 17 interposing the layer 16.
摘要翻译：要解决的问题：提供一种降低桥接半导体开关的配线电感的半导体装置，实现了小型化。解决方案：半导体器件包括两个可控桥接的半导体开关13a，13b; 输出端子; 正负极直流端子2和3; 导体层12,17和19以及绝缘层16和18交替层压以形成绝缘板15a，并且具有导体部分，其中半导体开关桥接在表面和内层的直流端子之间; 和当前路线（虚线）。在当前路径中，用于通过插入在内层的前表面和导体层12,17之间的层16的导体20保持层16的前表面电连接到内层的层12,17 并且电流流到桥接电路，用于将两个开关安装在绝缘板上，在插入层16的层12和17之间的相对的方向上流动。

7. 发明专利

JP2014056877A Semiconductor device and semiconductor integrated circuit device using the same 审中-公开
标题翻译：使用其的半导体器件和半导体集成电路器件
公开(公告)号：JP2014056877A
公开(公告)日：2014-03-27
申请号：JP2012199611
申请日：2012-09-11
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIRAKAWA SHINJI , SAKANO JUNICHI
IPC分类号： H01L21/336 , H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/08 , H01L27/092 , H01L29/786
CPC分类号： H01L27/0922 , H01L27/1203 , H01L29/402 , H01L29/7835
摘要： PROBLEM TO BE SOLVED: To provide a MOSFET which enables mixed loading with a logic circuit and used for a circuit for performing an operation of applying negative voltage to a drain electrode and which has a high current density.SOLUTION: A MOSFET formed on an SOI substrate comprises: an electrode which is surrounded by an insulation film and provided at an intermediate position between a gate electrode and a drain of the MOSFET in which negative voltage is applied to the drain electrode, and which is connected to ground. With this configuration, decrease in withstanding voltage caused by increase in impurity concentration in a drift region is suppressed. Decrease in drift resistance improves a current density.
摘要翻译：要解决的问题：提供一种能够与逻辑电路混合加载并用于执行向漏极施加负电压并且具有高电流密度的电路的MOSFET的MOSFET。解决方案：形成在SOI上的MOSFET 基板包括：由绝缘膜包围并设置在MOSFET的栅电极和漏极之间的中间位置处的电极，其中负电压施加到漏电极并且连接到地。利用这种结构，可以抑制漂移区域中的杂质浓度增加引起的耐压降低。漂移电阻的降低提高了电流密度。

8. 发明专利

JP2013223265A Driving device for semi-conductor device 有权
标题翻译：用于半导体器件的驱动器件
公开(公告)号：JP2013223265A
公开(公告)日：2013-10-28
申请号：JP2012091503
申请日：2012-04-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KONNO TETSUTOYO , ONOSE HIDEKATSU , SAKANO JUNICHI , SHIRAKAWA SHINJI
IPC分类号： H02M1/08 , H03K17/16
摘要： PROBLEM TO BE SOLVED: To provide a driving device for a semi-conductor device capable of surely controlling switching of the semi-conductor device so as to suppress a surge voltage or ringing while reducing a turn-on loss, even with the semi-conductor device that contains a high-speed semi-conductor switching element.SOLUTION: A driving device for a semi-conductor device equipped with a voltage control type semiconductor switching element and a reflux diode, includes a gate drive resistor connected between a turn-on power source and a gate terminal of the voltage control type semiconductor switching element, threshold value detection means which detects the fact that a gate voltage of the voltage control type semiconductor switching element has reached a threshold value at which a main current starts to flow, and gate drive resistor setting means which sets the gate drive resistor to be a first resistive value at the start of turn-on operation, and after the threshold value detection means detects that the gate voltage has reached the voltage, sets the gate drive voltage to be a second resistive value which is larger than the first resistive voltage, and then, sets it to be a third resistive value which is smaller than the first and second resistive values.
摘要翻译：要解决的问题：为了提供能够可靠地控制半导体器件的开关的半导体器件的驱动器件，以便在减少导通损耗的同时抑制浪涌电压或振铃，即使使用半导体装置，其包含高速半导体开关元件。解决方案：配备有电压控制型半导体开关元件和回流二极管的半导体器件的驱动装置包括连接在导通电源之间的栅极驱动电阻器电压控制型半导体开关元件的源极和栅极端子，阈值检测单元，其检测电压控制型半导体开关元件的栅极电压达到主电流开始流动的阈值的事实;以及栅极驱动电阻设定单元，其在接通运行开始时将栅极驱动电阻设定为第一电阻值，在阈值检测m USB检测到栅极电压已经达到电压，将栅极驱动电压设置为大于第一电阻电压的第二电阻值，然后将其设置为小于第一和第二电阻值的第三电阻值电阻值。

9. 发明专利

JP2010003889A Semiconductor device, semiconductor integrated circuit device for plasma display driving using the same, and plasma display device 审中-公开
标题翻译：半导体器件，使用其的等离子体显示驱动的半导体集成电路装置和等离子体显示装置
公开(公告)号：JP2010003889A
公开(公告)日：2010-01-07
申请号：JP2008161542
申请日：2008-06-20
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIRAKAWA SHINJI , SAKANO JUNICHI , HARA KENJI
IPC分类号： H01L29/786 , H04N5/66
CPC分类号： H01L29/7394 , H01L29/0696
摘要： PROBLEM TO BE SOLVED: To provide a lateral IGBT (Insulated Gate Bipolar Transistor) which is formed on an SOI substrate and is large in current density.
SOLUTION: In a lateral IGBT structure which has an emitter terminal composed of two or more second conductivity type base layers for one collector terminal, a second conductivity type base layer in an emitter region is covered with a first conductivity type layer having higher density than a drift layer, a gate electrode between two adjacent emitters has a width L1 of ≤4 μm, and further an emitter-electrode lead-out opening between two adjacent gate electrodes has a width L2 of ≤3 μm. Consequently, while a breakdown voltage is maintained, a first conductivity type layer is made high in density to improve the current density.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供形成在SOI衬底上并且电流密度大的横向IGBT（绝缘栅双极型晶体管）。解决方案：在具有由用于一个集电极端子的两个或更多个第二导电型基极层组成的发射极端子的横向IGBT结构中，发射极区域中的第二导电型基极层被具有较高的第一导电类型层密度比漂移层高，两个相邻的发射极之间的栅电极的宽度L1为≤4μm，两个相邻栅电极之间的发射电极引出开口的宽度L2为≤3μm。因此，在保持击穿电压的同时，使第一导电型层的密度高，以提高电流密度。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2005197377A Conductive adhesive sheet, its manufacturing method and power converter 有权
标题翻译：导电胶粘剂，其制造方法和功率转换器
公开(公告)号：JP2005197377A
公开(公告)日：2005-07-21
申请号：JP2004000734
申请日：2004-01-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SUWA TOKIHITO , SHIGETA SATORU , SHIRAKAWA SHINJI , OCHIAI YOSHITAKA
IPC分类号： H01L23/36 , B60W10/08 , H01L23/367 , H01L23/48 , H01L23/488 , H01L25/07 , H05K3/32
CPC分类号： B60K6/26 , B60K6/48 , B60W10/08 , H01L23/367 , H01L23/48 , H01L23/488 , H01L25/072 , H01L2224/05554 , H01L2224/49175 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H05K3/321 , H05K2201/0373 , H05K2201/1028 , Y02T10/6221 , Y10T428/12556 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a conductive adhesive sheet which improves the connection reliability more than from now on. SOLUTION: The conductive adhesive sheet has a base 1 for forming an electric or/and thermal transfer line in the plane of the sheet. The base is formed from a metal foil having an intermediate thermal expansion coefficient between the thermal expansion coefficients of at least two works to be bonded. Owing to the thermal expansion difference, such constitution relaxes a stress exerted on a protuberant layer 2 for forming an electric or/and thermal transfer line between the base 1 and the works to be bonded. COPYRIGHT: (C)2005,JPO&NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式