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1. 发明专利

JP2002373884A Method for manufacturing plasma processor for producing semiconductor 有权
标题翻译：制造用于生产半导体的等离子体处理器的方法
公开(公告)号：JP2002373884A
公开(公告)日：2002-12-26
申请号：JP2001179463
申请日：2001-06-14
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAWATA MAKOTO , FUJISHIRO MASAHARU , YAMANE TOMOYUKI
IPC分类号： B01J19/08 , C23C14/00 , C23C16/44 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent a plasma processor from causing Na contamination of a substrate at the time of plasma processing.
SOLUTION: In the method for manufacturing a plasma processor being employed in the production of a semiconductor, components subjected to machining or surface treatment and being exposed to the plasma of the plasma processor are cleaned with hot pure water before being incorporated in an apparatus.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了防止等离子体处理器在等离子体处理时引起基板的Na污染。解决方案：在制造用于制造半导体的等离子体处理器的方法中，经加工或表面处理并暴露于等离子体处理器的等离子体的部件在加入设备之前用热纯水清洗。

2. 发明专利

JPH11274145A Plasma etching 有权
标题翻译：等离子体蚀刻
公开(公告)号：JPH11274145A
公开(公告)日：1999-10-08
申请号：JP259599
申请日：1999-01-08
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAWATA MAKOTO , KANAI SABURO , ITO SATORU , SATO YOSHIE
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for performing plasma etching on an oxide film, which can suppress the decrease in the etching rate of the oxide film and provide high selectivity to an underlying silicon film.
SOLUTION: In a microwave plasma etching apparatus, a constituent member, e.g. an electrode cover 10 of a vacuum container 4 for generating plasma is made of silicon carbide, and a radio frequency power is applied to the silicon carbide. Thereby silicon or carbon ions as constituent components of the silicon carbide are sputtered. Also the reaction of silicon ions with fluorine ions causes formation of carbon fluoride. The reaction with the sputtered silicon or carbon ions causes fluorine ions or fluorine atoms as silicon reactive species to be decreased, thus decreasing an etching rate of an underlying silicon film. Carbon fluoride prepared through the reaction with fluorine ions is a reactive species, which suppresses the etching of the underlying silicon film and selectively etches an oxide film.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：提供一种在氧化膜上进行等离子体蚀刻的方法，其可以抑制氧化膜的蚀刻速率的降低，并且对下面的硅膜提供高选择性。解决方案：在微波等离子体蚀刻装置中，用于产生等离子体的真空容器4的电极盖10由碳化硅制成，并且向碳化硅施加射频功率。由此，作为碳化硅的构成成分的硅或碳离子被溅射。硅离子与氟离子的反应也导致形成氟化碳。与溅射的硅或碳离子的反应导致氟离子或氟原子作为硅反应性物质降低，从而降低底层硅膜的蚀刻速率。通过与氟离子反应制备的氟化碳是反应性物质，其抑制下面的硅膜的蚀刻并选择性蚀刻氧化物膜。

3. 发明专利

JPH0982690A PLASMA ETCHING METHOD 失效
公开(公告)号：JPH0982690A
公开(公告)日：1997-03-28
申请号：JP24126795
申请日：1995-09-20
申请人： HITACHI LTD
发明人： NAWATA MAKOTO , YAKUSHIJI MAMORU , TSUKUNI KAZUYUKI , YAMAZAKI KAZUO
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To restrain cleaned silicon and an oxide film (SiO2 ) as a ground film from varying in etching rate so as to improve wafers in uniformity. SOLUTION: Seasoning is carried out with plasma of Cl2 gas by the use of a silicon substrate after cleaning to reduce the influence of residues left inside a cleaned processing chamber after cleaning, and furthermore processing (Cl2 gas discharge) is carried out with Cl2 plasma by the use of a substrate which comprises an Si substrate and an oxide film formed on it to reduce the influence of residues left inside the processing chamber after seasoning.

4. 发明专利

JPH08255786A PLASMA ETCHING METHOD 失效
公开(公告)号：JPH08255786A
公开(公告)日：1996-10-01
申请号：JP5854695
申请日：1995-03-17
申请人： HITACHI LTD
发明人： NAWATA MAKOTO , YAKUSHIJI MAMORU
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide a plasma etching method suited to improve the uniformity between wafers by suppressing the variation of the etching speed of Si and an oxide film (SiO2 ) of an underlying film after cleaning. CONSTITUTION: After cleaning, the seasoning is done using a mixed gas plasma of Cl2 and SiCl4 to reduce the influence of residues in a treating chamber after cleaning. Thus, the influence of F remaining after cleaning can be suppressed and the variation of the etching speed of the Si and oxide film can be avoided.

5. 发明专利

JPH0888095A PLASMA PROCESSING DEVICE AND CONTROL THEREOF 失效
公开(公告)号：JPH0888095A
公开(公告)日：1996-04-02
申请号：JP22297494
申请日：1994-09-19
申请人： HITACHI LTD
发明人： TAKAHASHI NUSHITO , NAWATA MAKOTO
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To prevent variation in plasma processing characteristics and to enhance availability by heating and controlling the wall and the window of a plasma processing device by infrared radiation. CONSTITUTION: For example, in a μ-wave etching device, the temperature of a semispherical bell-jar 1 consisting of quartz is previously heated to about 200 deg.C, using a far infrared radiation heater 7. Starting plasma processing at this point of time permits etching under the condition similar to a steady state from the beginning. Temperature control is made by turning off the heater 7 or by decreasing its output when excessive temperature rise is observed. Thus a variation in the temperature of the bell-jar 1 is depressed to enhance the availability and the yield of the device. In addition, plasma screening for removing a stuck fragments is applied by setting the temperature of the bell-jar 1 higher than for etching.

6. 发明专利

JPH07263410A ASHING METHOD 失效
公开(公告)号：JPH07263410A
公开(公告)日：1995-10-13
申请号：JP4682294
申请日：1994-03-17
申请人： HITACHI LTD
发明人： SATO HITOAKI , KANEKIYO TAKAMITSU , MITSUTA AKIHIKO , SHIMIZU FUMIO , TAKEI HIDENORI , NAWATA MAKOTO
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065
摘要： PURPOSE:To enable a mask member (resist) to be removed without affecting to high-corrosion proofness Al alloy barrier metal and an underneath oxide film at all by a method wherein H2 is added to arrest the chlorine component in a workpiece for enhancing the corrosion proofness so as to used a gas not reactive to the barrier metal and the underneath insulating film material. CONSTITUTION:A wafer stage 9 is set up a specific temperature by a stage temperature controller 8. In this plasma treater, the microwaves oscillated from a magnetron 2 are led into a vacuum chamber kept at a specific pressure by introducing treatment gas so as to produce plasma in a space between a quartz bell jar 4 and a microwave reflecting plate 6. Next, a mask member of a wafer 10 mounted on the wafer stage 9 is removed by an active species of plasma produced above said wafer 10 mounted on the stage 9 controlled at a specific temperature. That is, the title ashing method is performed using oxygen + argon + hydrogen gas without affecting a barrier metal and an underneath insulating film at all.

7. 发明专利

JPH07201816A PLASMA TREATMENT METHOD 失效
公开(公告)号：JPH07201816A
公开(公告)日：1995-08-04
申请号：JP33495593
申请日：1993-12-28
申请人： HITACHI LTD
发明人： OMOTO YUTAKA , FUKUYAMA RYOJI , NAWATA MAKOTO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform etching treatment with a high selection ratio for a substrate film or resist film, or to enlarge a process window for etching rate and selection ratio. CONSTITUTION:When performing etching treatment for a substrate to be treated 13 by using plasma generated by decompression, an additive gas and a frequency of a bias voltage from a high frequency power supply 14 to be applied to a specimen base 12 depending on the characteristics of plasma generated and a material to be treated during etching are adjusted. By doing this, a high selection ratio can easily be obtained for the substrate film and resist and also the process window can be extended.

8. 发明专利

JPH07201814A PLASMA ETCHING METHOD 失效
公开(公告)号：JPH07201814A
公开(公告)日：1995-08-04
申请号：JP33495193
申请日：1993-12-28
申请人： HITACHI LTD
发明人： NAWATA MAKOTO , YAKUSHIJI MAMORU , SAIKAI MASAHARU
IPC分类号： C23F4/00 , C23C16/44 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To prevent fluctuation in a residual oxide film on a substrate surface by suppressing a decrease in the etching speed of silicon and oxide film after cleaning and by performing seasoning with plasma such as Cl2 gas after cleaning thereby decreasing the influence of residue inside a treatment chamber. CONSTITUTION:Microwave oscillated from a magnetron 1 propagates through a wave guide 2 and is introduced to a treatment chamber 4 through a microwave introducing window 3. A cleaning gas (SF6), seasoning gas (Cl2 gas) and etching gas (C2 gas) supplied from an etching gas supply apparatus 8 are turned into plasma. Cleaning of the treatment chamber 4 is performed by SF6 gas plasma. Seasoning of the treatment chamber 4 is performed by Cl2 gas plasma. A wafer 10 placed on a mounting electrode 9 is etched by Cl2 gas. By doing this, the influence of the residual fluorine after cleaning is suppressed, and a decrease in the etching rate of silicon and oxide film can be prevented.

9. 发明专利

JPH061770B2 失效
公开(公告)号：JPH061770B2
公开(公告)日：1994-01-05
申请号：JP1324984
申请日：1984-01-30
申请人： HITACHI LTD
发明人： NAKAZATO NORIO , FUKUYAMA RYOJI , NAWATA MAKOTO , FUKUSHIMA YOSHIMASA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065

10. 发明专利

JPH04355915A PLASMA GROWTH METHOD AND DEVICE THEREOF 失效
公开(公告)号：JPH04355915A
公开(公告)日：1992-12-09
申请号：JP23298591
申请日：1991-09-12
申请人： HITACHI LTD
发明人： KAKEHI YUTAKA , WATANABE SEIICHI , NAWATA MAKOTO , KANAI SABURO
IPC分类号： C23F4/00 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To grow plasma in an excellently uniform manner by a method wherein specific microwaves in a plurality of modes are superposed, and plasma is grown in a discharge region using the superposed microwave electric field. CONSTITUTION:A magnetron 1 generates the electric field of TE11 mode in a rectangular waveguide 3. On the other hand, a magnetron 12 generates the electric field of TM0.1 mode. As a result, the electric field, in which the TE11 mode and TM0.1 mode are superposed, is transmitted in the discharge chamber 7 which is s discharge region. At this point, the TE11 mode electric field shows the electric field distribution having the high center part of the axis of the discharging chamber 7. A uniform electric field distribution can be obtained from the entire discharge chamber 7 by superposing the above-mentioned modes. As a result, high density plasma can be grown on the entire discharge chamber in an excellent uniformity by the synergism with the magnetic field, having uniform distribution, and the magnetic field of coils 10 and 11.

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