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1. 发明专利

JP2004037595A Method for manufacturing liquid crystal panel 有权
公开(公告)号：JP2004037595A
公开(公告)日：2004-02-05
申请号：JP2002191585
申请日：2002-07-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAKASU NOBUAKI , MATSUURA HIROYASU , KOSHIMO TOSHIYUKI , SHIBA MITSUAKI , AZUMA HITOSHI , TOMIZUKA YOSHITERU , OKADA TSUNEO
IPC分类号： G02F1/13 , G02F1/1339
摘要： PROBLEM TO BE SOLVED: To provide a liquid crystal panel with little display unevenness by suppressing gap unevenness between a pair of glass substrates constituting the liquid crystal panel. SOLUTION: A pair of the glass substrates 1a, 1b with an uncured thermosetting sealant 2 arranged in between is wrapped in sheets 3a, 3b. The inside of the sheets 3a, 3b is nearly shut tight and depressurized. The glass substrates 1a, 1b and the sealant 2 are pressurized with differential pressure from atmospheric pressure via the sheets 3a, 3b maintaining a specified gap, and simultaneously the sheets 3a, 3b, the glass substrates 1a, 1b and the sealant 2 are heated with heaters 9a, 9b on positions separated from the sheets 3a, 3b and the sealant is cured. Thereby the gap between a pair of the glass substrates 1a, 1b is maintained. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2002169169A METHOD FOR MANUFACTURING LIQUID CRYSTAL PANEL, MANUFACTURING DEVICE FOR THE LIQUID CRYSTAL PANEL, LIQUID CRYSTAL DISPLAY AND STORAGE MEDIUM 失效
公开(公告)号：JP2002169169A
公开(公告)日：2002-06-14
申请号：JP2000363295
申请日：2000-11-29
申请人： HITACHI LTD
发明人： MATSUURA HIROYASU , AZUMA HITOSHI , KOSHIMO TOSHIYUKI , SHIBA MITSUAKI , OKADA TSUNEO
IPC分类号： G02F1/13 , G02F1/1339
摘要： PROBLEM TO BE SOLVED: To apply uniform pressurizing and uniform heating to glass substrates and a sealing material for holding a liquid crystal, and to suppress increase in the size of a device, with respect to the techniques for manufacturing a liquid crystal panel. SOLUTION: Glass substrates with an unhardened thermosetting sealing material disposed between the substrates are wrapped with sheets. The inner pressure of the sheets is reduced, while keeping the inside of the sheets in a nearly sealed state, the glass substrates and the sealing material are pressurized through the sheets under a prescribed gap, by the pressure difference between the atmospheric pressure and the inner pressure and, the sheets, the glass substrates and the sealing material are heated by a heater, located in a position apart from the sheets to harden the sealing material.

3. 发明专利

JPH04309927A MANUFACTURE OF ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY ELEMENT USING THE SAME 失效
公开(公告)号：JPH04309927A
公开(公告)日：1992-11-02
申请号：JP7608391
申请日：1991-04-09
申请人： HITACHI LTD
发明人： KOSHIMO TOSHIYUKI , YORITOMI YOSHIFUMI , TAKANO TAKAO , NAKATANI MITSUO
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786 , H01L49/02
摘要： PURPOSE:To reduce the manufacturing cost by decreasing all forming processes of switching elements, electric conductors, and picture element electrodes which constitute the active matrix substrate. CONSTITUTION:A gate electrode 2 is formed by plating on a transparent substrate 1 whose surface is made of an insulator, an organic insulator such as polyimide is applied and set to form a gate insulating film 3, and an organic semiconductor is printed thereupon to form a semiconductor layer 4. A channel protection film 23 is formed at the part of a thin film transistor which becomes a channel and a source electrode 5 and a drain electrode 6 are formed by plating. Lastly, a picture element electrode 7 is formed by printing.

4. 发明专利

JPH0481820A ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY ELEMENT USING THE SAME 失效
公开(公告)号：JPH0481820A
公开(公告)日：1992-03-16
申请号：JP19488890
申请日：1990-07-25
申请人： HITACHI LTD
发明人： YORITOMI YOSHIFUMI , KOSHIMO TOSHIYUKI , NAKATANI MITSUO , TAKANO TAKAO
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/3205 , H01L23/52 , H01L27/12
摘要： PURPOSE:To obtain the liquid crystal display element which is free from the shorting defects between picture element electrodes and signal lines and has the excellent electrical connectability between the picture element electrodes and source electrodes by using transparent conductive films which consist of conductive particles and a resin and have 0.1 to 3mum film thickness as the picture element electrodes. CONSTITUTION:A material prepd. by dispersing and dissolving 40pts.wt. indium oxide particles contg. 5 atomic% tin and having 20nm average grain size and 30pts.wt. polymethacrylic polymer contg. 2.5wt.% benzophenone thickener in ethyl cellosolve and adjusting the viscosity of the soln. to 25cps is used as the material for forming the picture element electrodes. After this material is applied by a spinner method on a substrate, the coating is dried for 15 minutes at 100 deg.C. The coating is then exposed to picture element electrode pattern shapes by an ordinary method and after the coated films of unexposed parts are developed away by using a developer of sodium orthosilicate, the substrate is washed and is heat treated for 30 minutes at 180 deg.C, by which the picture element electrodes are formed. The film thickness after the treatment is specified to 0.1 to 3mum.

5. 发明专利

JPH0448733A MULTILAYER WIRING AND ITS MANUFACTURE, AND FILM TRANSISTOR MATRIX WHEREIN IT IS USED 失效
公开(公告)号：JPH0448733A
公开(公告)日：1992-02-18
申请号：JP15515990
申请日：1990-06-15
申请人： HITACHI LTD
发明人： TAKANO TAKAO , YORITOMI YOSHIFUMI , KOSHIMO TOSHIYUKI , NAKATANI MITSUO , MATSUZAKI EIJI
IPC分类号： H01L21/3213 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To prevent the short trouble between a gate electrode and source and drain electrodes, and the breaking trouble, the increased of wiring resistance, etc., of the upper layer bus line caused by the step in the lower layer bus line and reduce cost by making the width of the wiring of a first metallic film, whereon a second metallic film is not formed, smaller than the value being gotten by subtracting the width of the wiring of the second metallic film from the width of the wiring of the first metallic film, whereon a second metallic film is formed. CONSTITUTION:With the resist pattern on an Al film as a mask, only the Al film is etched, using the solution (the mixture of phosphoric acid, nitric acid, acetic acid, and water, liquid temperature 40 deg.C) in the line of phosphoric acid. Next, with the resist pattern and the Al film after etching as masks, only the Cr film is etched in the solution of diammonium cerium nitrate. Then, the sides of the Al film are etched in phosphoric acid solution until the Al film on the Cr film is completely removed in the b-b' section. By removing the resist pattern, multilayer wiring is formed. Since it can be made by the photoprocess of one time, the manufacturing cost can be cut down.

6. 发明专利

JPH03142498A METHOD AND APPARATUS FOR INSPECTING THIN-FILM TRANSISTOR ACTIVE MATRIX SUBSTRATE 失效
公开(公告)号：JPH03142498A
公开(公告)日：1991-06-18
申请号：JP27968289
申请日：1989-10-30
申请人： HITACHI LTD
发明人： NAKATANI MITSUO , YORITOMI YOSHIFUMI , KOSHIMO TOSHIYUKI , KUBOTA HITOSHI , IWATA HISAFUMI
IPC分类号： G01R31/00 , G01R31/308 , G02F1/136 , G02F1/1368 , G09G3/36
摘要： PURPOSE:To make rapid detection with a change in the optical characteristics of a liquid crystal layer by disposing a thin-film transistor active matrix substrate and microcapsulated liquid crystals to face each other and impressing voltages to the scanning lines and signal lines of the above-mentioned thin-film substrate. CONSTITUTION:The TFTR active matrix substrate to be used for inspection is formed on a glass substrate 12 by the plural scanning lines 8, signal lines 9 and TFTRs 10. All the scanning lines 5 and signal lines 6 are electrically connected by wirings 13 for inspection in order to allow inspection in a short period of time. This electrical connection may be executed by dividing the lines block by block. Discoloration arises in a chiral nematic liquid crystal layer 3 on the short circuited defect part of the scanning lines 8 and the signal lines 9 when a prober 7 is applied to terminals 14 for probing of this TFTR active matrix substrate and the voltages are impressed between the scanning lines 8 and the signal lines 9. The positions of the short circuit defect part where the defect exists and the defect does not exist are thus easily visually detected.

7. 发明专利

JPH02240636A ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY ELEMENT USING THE SAME 失效
公开(公告)号：JPH02240636A
公开(公告)日：1990-09-25
申请号：JP6094589
申请日：1989-03-15
申请人： HITACHI LTD
发明人： KOSHIMO TOSHIYUKI , YORITOMI YOSHIFUMI , MATSUZAKI EIJI , TAKANO TAKAO , NAKATANI MITSUO , KENMOCHI AKIHIRO
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain active matrix substrates in a high yield by covering an auxiliary scanning line made of an Al film with a main scanning line and forming an oxide film on the entire surface of the main scanning line by anodic oxidation. CONSTITUTION:The structure of a scanning line-signal line crossing part is composed of an auxiliary scanning line 2 formed on a substrate 1, a main scanning line 3, an oxide film 11 formed by anodically oxidizing the entire surface of the scanning line 3, a gate insulating film 4, a semiconductor layer 5 and a signal line 6. Since the oxide film 11 is formed by anodically oxidizing the entire region of the scanning line, even when the signal line 6 shifts, the oxide film 11 and the gate insulating film 4 insulate the signal line 6 from the scanning lines and a short circuit is prevented. Since the auxiliary scanning line 2 is made of an Al-based metal film and covered with the main scanning line 3, a short-circuit between the scanning lines and the signal line due to hillocks formation of Al and the increase of the resistance of the scanning lines are prevented. The yield of production of active matrix substrates is enhanced.

8. 发明专利

JPS62264089A DISPLAY ELEMENT 失效
公开(公告)号：JPS62264089A
公开(公告)日：1987-11-17
申请号：JP10657786
申请日：1986-05-12
申请人： HITACHI LTD
发明人： KOBAYASHI HIDE , KENMOCHI AKIHIRO , SUNAHARA KAZUO , ORITSUKI RYOJI , KOSHIMO TOSHIYUKI , YORITOMI YOSHIFUMI , NAKATANI MITSUO , MATSUZAKI EIJI
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1368 , G09F9/30 , H01L29/78 , H01L29/786

9. 发明专利

JPS58194735A Preparation of grinding layer and preparation thereof 失效
标题翻译：研磨层的制备及其制备
公开(公告)号：JPS58194735A
公开(公告)日：1983-11-12
申请号：JP7456982
申请日：1982-05-06
申请人： Hitachi Ltd
发明人： MATSUZAKI EIJI , KOSHIMO TOSHIYUKI , NISHIGUCHI TAKASHI , HORIYASU SHIYUNSUKE , FUJII TAKASHI
IPC分类号： G11B3/56 , C23C14/08 , C23C14/10 , G11B9/07
CPC分类号： C23C14/10
摘要： PURPOSE:To form a grinding layer of long life having a high grinding efficiency for a hard and brittle material, e.g. diamond or sapphire, by depositing a vapor obtained by reacting a vapor prepared by heating activated oxygen with silicon oxide on a support board. CONSTITUTION:A silicon oxide SiOx (0.8 Pa pressure or below, and oxygen is then introduced from an introductory port 28. A high-frequency waves are applied to a high-frequency coil 23 to excite an oxygen plasma. On the other hand, the vapor deposition source 24 is heated by an electron gun 26 by using electron rays, and the generated vapor stream is reacted with activated oxygen to deposit the resultant vapor on the supporting board 22 and form a grinding layer consisting of the silicon oxide. During the above-mentioned vapor deposition operation, the oxygen pressure is kept at about 1.33X10 -0.05 pa.
摘要翻译：目的：形成具有高磨削效率的长寿命研磨层，用于硬和脆性材料，例如，通过将通过将活化氧加热制备的蒸气与氧化硅反应而获得的蒸汽沉积在支撑板上而形成的金刚石或蓝宝石。构成：作为气相沉积源24的氧化硅SiO x（0.8 <= x <= 1.5）被引入到坩埚25中，并且用于研磨层的支撑板22被放置在与氧化硅相对的保持器21上。然后将真空罐20的内部通过空气排出口27抽空至约1×10 -4 Pa压力或更低，然后从介绍口28引入氧。将高频波施加到高压波频率线圈23以激发氧等离子体。另一方面，气相沉积源24通过电子射线被电子枪26加热，所产生的蒸汽流与活性氧反应，将所得蒸气沉积在支撑板22上，形成由氧化硅。在上述蒸镀工序中，氧气压力保持在1.33×10 -4〜0.05Pa左右。

10. 发明专利

JP2000024607A METHOD FOR REMOVING FOREIGN MATTER 失效
公开(公告)号：JP2000024607A
公开(公告)日：2000-01-25
申请号：JP19395698
申请日：1998-07-09
申请人： HITACHI LTD
发明人： ICHINOSE TOSHIAKI , NAKASU NOBUAKI , IWAMURA RYOJI , KOSHIMO TOSHIYUKI , FUJITA YASUMITSU
IPC分类号： B08B5/04 , B01D46/42
摘要： PROBLEM TO BE SOLVED: To enable leaving no problem, that suction ability is lowered or product is damaged, to a foreign matter removing treatment of a next object by dissolving foreign matter clogging in a nozzle for removing the foreign matter and thereby to prevent generation of large amount of defects due to foreign matter clogging of the suction nozzle in a device for automatically and continuously removing the foreign matter from the objective products. SOLUTION: An objective substrate 100 is mounted on a scanning stage 6, a line-shaped suction nozzle 1 is installed at a height which forms an appropriate gap from the objective substrate 100 and the objective substrate 100 is scanned while sucking by the line-shaped suction nozzle 1 to suck and remove the foreign matter. Then, a treatment for removing the foreign matter clogged in the nozzle is executed by switching suction to air discharge by a selector 4 at a timing when the objective substrate 100 is not present below the suction nozzle 1.

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