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1. 发明专利

JP2001060692A ACTIVE MATRIX CIRCUIT BOARD 失效
公开(公告)号：JP2001060692A
公开(公告)日：2001-03-06
申请号：JP2000134216
申请日：2000-04-28
申请人： HITACHI LTD
发明人： MATSUZAKI EIJI , TAKANO TAKAO , KOSHIMO TOSHIYUKI , YORITOMI YOSHIFUMI , KENMOCHI AKIHIRO , NAKATANI MITSUO
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To prevent wiring from causing a resistance increase or disconnection when the wiring gets over the step of a silicon-based insulating film which is arranged to cover at least part of a terminal pattern, by forming a normally tapered inclined section at the end of the insulating film. SOLUTION: The etching pattern of a silicon nitride film 3 is formed of a photoresist 100. At the time of forming the etching pattern, an amorphous silicon film 4 is made to exist at the boundary between an etched area and a non-etched area. A sample is set in a dry etching device and the silicon nitride film 3 is etched by using SF6 as an etching gas and setting the pressure of the etching gas at, for example, 30 Pa and the etching power at 200 W. When the film 3 is etched, the amorphous silicon film 4 is left depending upon the size of the area of the film 4. Then the photoresist 100 used at the time of etching the film 3 is removed. Consequently, an inclined etched step is obtained.

2. 发明专利

JPH11119259A ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SUBSTRATE 失效
公开(公告)号：JPH11119259A
公开(公告)日：1999-04-30
申请号：JP30681798
申请日：1997-11-10
申请人： HITACHI LTD
发明人： KOSHIMO TOSHIYUKI , MATSUZAKI EIJI , YORITOMI YOSHIFUMI , KENMOCHI AKIHIRO , TAKANO TAKAO , NAKATANI MITSUO
IPC分类号： B23K7/00 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L27/12 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To improve the production yield of an AMX substrate by making the scanning lines made of multilayered main and auxiliary scanning lines using the material to which anodization is applicable. SOLUTION: The AMX substrate is constituted of scanning lines 3 made of metallic films, auxiliary scanning lines 2, which are made of the metallic films that differ from the metallic film of the lines 3, signal lines 6 made of Cr or Al, pixel electrodes 7 made of transparent and electrically conductive films such as ITO and a thin film transistor section 12. The scanning line-signal line crossing section is constituted of the lines 2 provided on a substrate 1, the lines 3 provided over the lines 2, an oxidized film 11, which is formed by anodizing scanning lines 13, a gate insulation film 4, which is provided on the film 11, a semiconductor layer 5 and the lines 6. Since the scanning lines of the scanning line-signal line crossing section are made of multilayered lines 2 and 3, the redundancy is made higher and discontinuity is eliminated. Moreover, the short circuits between the lines 3 and 6 are prevented even though positional deviations are generated during a signal line formation because the film 11 is provided over the entire surface of the main scanning lines by anodization.

3. 发明专利

JPH05160079A DRY ETCHING METHOD OF AMORPHOUS SILICON 失效
公开(公告)号：JPH05160079A
公开(公告)日：1993-06-25
申请号：JP32285091
申请日：1991-12-06
申请人： HITACHI LTD
发明人： TAKANO TAKAO , YORITOMI YOSHIFUMI , TODOROKI SATORU , TAKAHASHI MIKIO , ORITSUKI RYOJI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To enable a dry etching operation to be enhanced in etching selectivity difference between a base film and an SiN film and to be lessened in etching residuals by a method wherein mixed gas of either CHClF2 or CHCl2F, SF6, and O2 is used for the dry etching of an a-Si film on an SiN film. CONSTITUTION:A gate insulating film SiN film 3, a semiconductor layer a-Si film 4, and an ohmic contact layer N-type a-Si film 5 are successively formed and then subjected to a photolithography process. Furthermore, in a dry-etching process, SF6 which produces much F radicals is used so as to enhance the a-Si film 4 in etching rate and to remove residuals generated by unsaturated substance, CHClF2 or CHCl2F is used so as to enhance an etching operation in etching selectivity difference between a base material and the film SiN film 3, and O2 is used to enable a polymerized film to be removed and enhanced in etching rate.

4. 发明专利

JPH0336769A THIN FILM TRANSISTOR AND MANUFACTURE THEREOF AND MATRIX CIRCUIT SUBSTRATE AND IMAGE DISPLAY DEVICE USING THE SAME 失效
公开(公告)号：JPH0336769A
公开(公告)日：1991-02-18
申请号：JP17265689
申请日：1989-07-04
申请人： HITACHI LTD
发明人： MATSUZAKI EIJI , TAKANO TAKAO , KOSHIMO TOSHIYUKI , YORITOMI YOSHIFUMI , KENMOCHI AKIHIRO , NAKATANI MITSUO
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a thin film transistor having an electrode connecting hole obliquely etched in a gate insulating film by constructing the gate insulating film of a gate insulating film wherein the etching speed becomes substantially smaller as the distance from the surface thereof into the depth direction becomes larger, and providing a step or an inclined part in the wall surface of an opening part provided in the gate insulating film. CONSTITUTION:The film property of a gate insulating film 3 is changed in the depth direction of the film so that the dry etching speed by fluorine compound gas is larger as a position when it comes nearer to a semiconductor film pattern 4, and smaller when it is further apart from it. For example, the film formation condition for a silicon nitride film is changed in the range, where N/Si ratio in the gate insulating film is not less than 1.3, to change the hydrogen content in the film. When the gate insulating film is etched, the etching plane enters under a resist pattern 10. The amount of the etching plane entering under the resist pattern 10 is larger at the upper part of the gate insulating film 3. As a result, when the etching is completed, the etching step of the gate insulating film 3 has forward gentle taper.

5. 发明专利

JPH02240935A MANUFACTURE OF ACTIVE MATRIX 失效
公开(公告)号：JPH02240935A
公开(公告)日：1990-09-25
申请号：JP6094789
申请日：1989-03-15
申请人： HITACHI LTD
发明人： YORITOMI YOSHIFUMI , KOSHIMO TOSHIYUKI , MATSUZAKI EIJI , TAKANO TAKAO , NAKATANI MITSUO
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786
摘要： PURPOSE:To eliminate a detect of a pixel electrode film by conducting passivation treatment of a metal film for a signal line after a drain electrode, a source electrode and said metal film are formed, and by conducting a fine processing of each electrode and a wiring thereafter. CONSTITUTION:An aluminum (Al) film 32 is immersed in hot water or a sodium silicate solution so as to passivate the surface of the aluminum film. Thereafter etching of a Cr film 31 and the Al film 32 is conducted and thereby a drain electrode 5 and a source electrode 6 of a thin-film transistor are formed. By passivating the surface of the Al film 32 in this way, the dissolution of the Al film 32 which occurs when the Al film 32 and a transparent conductive film 20 connected electrically are immersed in an alkaline developer is suppressed. Thereby a current flowing between the Al film 32 and the transparent conductive film 20 is reduced, a damage of the transparent conductive film 20 is lessened and a defect of the transparent conductive film 20 is prevented.

6. 发明专利

JPH02232627A ACTIVE MATRIX CIRCUIT BOARD, ITS MANUFACTURE, AND IMAGE DISPLAY DEVICE USING SAME BOARD 失效
公开(公告)号：JPH02232627A
公开(公告)日：1990-09-14
申请号：JP5190889
申请日：1989-03-06
申请人： HITACHI LTD
发明人： MATSUZAKI EIJI , KENMOCHI AKIHIRO , YORITOMI YOSHIFUMI , KOSHIMO TOSHIYUKI , TAKANO TAKAO , NAKATANI MITSUO
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/3205 , H01L23/52 , H01L29/78 , H01L29/786
摘要： PURPOSE:To decrease the wire disconnection probability of a 1st bus line as a scanning line and a 2nd bus line as a signal line, and to reduce the resistance by providing auxiliary bus lines on the 1st bus line which connects gate electrodes mutually and the 2nd bus line which connects drain electrodes mutually. CONSTITUTION:On the 1st bus line 8 as the scanning line which connects the gate electrodes 3 mutually, the auxiliary bus line 8' is formed of a material which has low resistance and low contact resistance with the 1st bus line. Further, the 2nd bus line 9 as the signal line which connects the drain electrodes 5 is formed of a display picture element electrode material and on the 2nd bus line, the auxiliary bus line 9' which is larger in film thickness than the 2nd bus line is provided. Consequently, the wire disconnection probability of the 1st bus line as the scanning line and the 2nd bus line as the signal line are reducible.

7. 发明专利

JPH02231716A DRY ETCHING METHOD FOR AMORPHOUS SILICON 失效
公开(公告)号：JPH02231716A
公开(公告)日：1990-09-13
申请号：JP5192389
申请日：1989-03-06
申请人： HITACHI LTD
发明人： TAKANO TAKAO , MATSUZAKI EIJI , YORITOMI YOSHIFUMI , KOSHIMO TOSHIYUKI , NAKATANI MITSUO , KENMOCHI AKIHIRO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform a selective etching and to stabilize the process by performing dry etching for an amorphous silicon film in a specified mixed gas. CONSTITUTION:In dry etching of A-Si 4 (or N a-Si 5) which is laminated on a silicon oxide layer or a silicon nitride layer 3 and in dry etching of the N a-Si 5 laminated on the a-Si 4, a gas containing at least CClF3 and O2 or a gas containing at least CCl2F2 and O2 is used as an etching gas. In the etching using said gas, an etching electrode is made to be an Al electrode on which alumina is coated, and the etching is performed so that the potential of the electrode is made low. In this way, selective etching for the N a-Si 5 and the a-Si 4, selective etching for the a-Si 4 and SiOxNy and selective etching for the N a-Si 5 and the SiOxNy can be performed by using the same gas.

8. 发明专利

JPH024211A SHUTTER DEVICE FOR CAMERA 失效
公开(公告)号：JPH024211A
公开(公告)日：1990-01-09
申请号：JP15229288
申请日：1988-06-22
申请人： HITACHI LTD
发明人： TAKANO TAKAO , MATSUZAKI EIJI , YORITOMI YOSHIFUMI , KENMOCHI AKIHIRO , KOSHIMO TOSHIYUKI , NAKATANI MITSUO , WATANABE KUNIHIKO
IPC分类号： G02F1/13 , G02F1/1343
摘要： PURPOSE:To achieve screen division, multiexposure photographing capable of imprinting >=2 small pictures in the same screen and to optionally change a diaphragm form by constituting a shutter main body of a light transmission liquid crystal panel using an active matrix substrate where a thin film transistor, etc., are used as switching elements. CONSTITUTION:The light transmission liquid crystal panel using the active matrix substrate is used as the shutter main body. The liquid crystal panel using the active matrix substrate 17 is operated by driving circuits 45 and 46 controlling two types of signals, a X signal and a Y signal. Each liquid crystal cell light in a panel is transmitted or shielded by the signals. In the panel, a matrix is formed by arranging many fine liquid crystal cells so as to vary the forms of parts where light is transmitted. In the whole screen, the parts where light is transmitted are limited, thereby achieving screen division multiexposure.

9. 发明专利

JPH01265233A ACTIVE MATRIX 失效
公开(公告)号：JPH01265233A
公开(公告)日：1989-10-23
申请号：JP9340588
申请日：1988-04-18
申请人： HITACHI LTD
发明人： MATSUZAKI EIJI , YORITOMI YOSHIFUMI , KOSHIMO TOSHIYUKI , TAKANO TAKAO , KENMOCHI AKIHIRO , NAKATANI MITSUO , SUNAHARA KAZUO
IPC分类号： H01L27/12 , G02F1/133 , G02F1/136 , G02F1/1368 , H01L29/78 , H01L29/786
摘要： PURPOSE:To prevent the disconnection of picture element electrodes in electrode step parts and the deterioration of characteristics by etching residues by forming a transparent conductive film to serve as the picture element electrode up onto a semiconductor film, coating layers contg. high melting metallic films thereon and forming the layers as a source electrode. CONSTITUTION:The matrix has an insulating substrate 1 consisting of a glass plate, etc., a gate electrode 2 consisting of a chromium film, etc., a gate insulating film 3 consisting of a silicon nitride film, a semiconductor film 4 consisting of an amorphous silicon film, etc., a drain electrode 5, a source electrode 6, and the picture element electrode 7 which is the transparent conductive film consisting of tin oxide and indium oxide. The drain electrode 5 and the source electrode 6 are made into the two-layered structure of the high melting metallic films 5a, 6a consisting of Cr, etc., and low resistance metals 5b, 6b consisting of Al, etc. This matrix is characterized by the coating of the steps of the semiconductor film 4 with the picture element electrode 7 and the source electrode 6 and the projection of the source electrode 6 from the front end of the widened part of the picture element electrode 7 toward the drain electrode. The disconnection of the picture element electrodes in the step parts of the source electrodes and the deterioration of the characteristics by the etching residues of the transparent conductive film are eliminated and the active matrix having a high yield of production is obtd.

10. 发明专利

JPS62203375A MANUFACTURE OF THIN-FILM TRANSISTOR 失效
公开(公告)号：JPS62203375A
公开(公告)日：1987-09-08
申请号：JP4531186
申请日：1986-03-04
申请人： HITACHI LTD
发明人： KOSHIMO TOSHIYUKI , MATSUZAKI EIJI , TAKANO TAKAO , YORITOMI YOSHIFUMI , SUNAHARA KAZUO , KENMOCHI AKIHIRO , KOBAYASHI HIDE , NAKATANI MITSUO
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To lessen the dispersion of element characteristics and also, to increase the manufacturing yield and to obtain a thin film transistor by a method wherein, before an Si thin film is processed, a metal thin film for the source electrode and the drain electrode is deposited. CONSTITUTION:A metal film 2 consisting of Cr, Al and so on is formed on an insulating substrate 1, a gate electrode 3 is formed by patterning the metal film by a photolithographic technique and a gate insulating film 4 is formed in such a way as to cover the electrode 3. Moreover, an Si thin film 5 is formed on this insulating film 4, a metal thin film 6 is formed on the Si thin film, a source electrode 7 and a drain electrode 8 are formed by patterning the metal thin film 6 by a photolithographic technique and a thin-film transistor is manufactured by patterning the Si thin film by a photolithographic technique.

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