专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2010278036A Photovoltaic power generation system 有权
标题翻译：光伏发电系统
公开(公告)号：JP2010278036A
公开(公告)日：2010-12-09
申请号：JP2009125962
申请日：2009-05-26
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KONO TORU , KAGEYAMA HIROSHI , HATANO MUTSUKO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a system configurations and a control method that solve operation with a local solution not at an MPP (Maximum Power Point) when a response to abrupt change in circumferential environment and a plurality of maximum values are generated, and that improve power generation efficiency of a photovoltaic power generation system.
SOLUTION: A control signal obtained by follow-up control over a solar cell is compared with electric power, and a control signal obtained by calculation from circumferential environment measurement for measuring parameters such as solar irradiation and temperature is compared with electric power, and based upon the comparison result, the solar cell is caused to output at an operation point obtained by switching a follow-up control method or calculation.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供当产生对周围环境的突然变化和多个最大值的响应时解决不在MPP（最大功率点）的本地解决方案的操作的系统配置和控制方法并提高光伏发电系统的发电效率。将通过太阳能电池的后续控制获得的控制信号与电力进行比较，并将通过从周围环境测量计算获得的控制信号与太阳能照射和温度等测量参数进行比较，并且基于比较结果，使太阳能电池在通过切换后续控制方法或计算而获得的操作点处输出。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009267219A Semiconductor memory device and manufacturing method thereof 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：JP2009267219A
公开(公告)日：2009-11-12
申请号：JP2008117055
申请日：2008-04-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SASAKO YOSHITAKA , TAKEMURA RIICHIRO , KINOSHITA KATSUJI , MINE TOSHIYUKI , SHIMA AKIO , MATSUOKA HIDEYUKI , HATANO MUTSUKO , TAKAURA NORIKATSU
IPC分类号： H01L27/105 , H01L21/20 , H01L21/265 , H01L27/10 , H01L45/00
CPC分类号： H01L27/2481 , H01L21/02532 , H01L21/02675 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146
摘要： PROBLEM TO BE SOLVED: To promote large capacity, high performance and high reliability of a semiconductor memory device, by attaining high-performance of both a semiconductor device and a memory element, when the semiconductor memory device is manufactured by stacking a memory element, such as, ReRAM or a phase change memory and the semiconductor device. SOLUTION: After a polysilicon forming a selection element is deposited in an amorphous state at a low temperature, crystallization and activation of impurities are performed with heat treatment, in a short time, by laser annealing. When laser annealing is performed, a recording material which is located below the silicon subjected to the crystallization is completely covered with a metal film or with the metal film and an insulating film, thereby making it possible to suppress a temperature increase, at annealing and is able to reduce the thermal load on the recording material. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了通过实现半导体器件和存储元件两者的高性能来提高半导体存储器件的大容量，高性能和高可靠性，当半导体存储器件通过堆叠存储器制造时元件，例如ReRAM或相变存储器和半导体器件。解决方案：在低温下以非晶态沉积形成选择元素的多晶硅后，通过激光退火在短时间内进行热处理来进行杂质的结晶和活化。当进行激光退火时，位于被结晶的硅下方的记录材料被金属膜或金属膜和绝缘膜完全覆盖，从而可以在退火时抑制温度升高，并且是能够降低记录材料的热负荷。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2005347764A Method of manufacturing image display device 审中-公开
标题翻译：制造图像显示装置的方法
公开(公告)号：JP2005347764A
公开(公告)日：2005-12-15
申请号：JP2005208022
申请日：2005-07-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HATANO MUTSUKO , YAMAGUCHI SHINYA , SHIBA TAKEO , TAI MITSUHARU , AKIMOTO HAJIME
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a image display device which is provided with an active matrix substrate, having highly efficient thin-film transistor circuit which operates at a high-speed mobility in a drive circuit for driving a pixel portion arranged into a matrix form. SOLUTION: A pulse modulation laser beam or a pseudo CW laser beam is scanned and irradiated to a polysilicon film, which is formed in a drive circuit region DAR1 around a picture element region PAR of an active matrix substrate SUB 1 so that a discontinuous modify region of approximately strip-shaped crystal silicon film, which is modified so as to have grain boundary which is continuous in the scanning direction, is formed. The drive circuit which has an active element, such as a thin-film transistor is fabricated so that the channel direction become the crystal growth direction of approximately strip-shaped crystal silicon film to a virtual tile TL which is formed in the discontinuous modify region. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造图像显示装置的方法，所述图像显示装置设置有有源矩阵基板，该有源矩阵基板具有高效率的薄膜晶体管电路，该驱动电路用于驱动驱动电路像素部分排列成矩阵形式。解决方案：脉冲调制激光束或伪CW激光束被扫描并照射到形成在有源矩阵基板SUB 1的像素区域PAR周围的驱动电路区域DAR1中的多晶硅膜，使得形成大致条形晶体硅膜的不连续修饰区域，其被修改为具有在扫描方向上连续的晶界。具有诸如薄膜晶体管的有源元件的驱动电路被制造成使得沟道方向成为大致条形晶体硅膜的晶体生长方向到形成在不连续修改区域中的虚拟瓦TL。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005244246A Semiconductor device and manufacturing method therefor and image display device 审中-公开
标题翻译：半导体器件及其制造方法及图像显示装置
公开(公告)号：JP2005244246A
公开(公告)日：2005-09-08
申请号：JP2005081348
申请日：2005-03-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HATANO MUTSUKO , AKIMOTO HAJIME , NAKAHARA HITOSHI
IPC分类号： H01L27/08 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which relax the electric field on the drain side, inhibit the generation of avalanche breakdown and hot carriers, and to operate at a high speed by reduction in the overlap capacity.
SOLUTION: The semiconductor device has a MIS type field effect transistor, having a gate electrode comprised of a polycrystalline silicon 18 and a conductive sidewall 50, which are prepared through a gate insulating film 17 on a semiconductor layer 9 arranged on one surface of an insulating substrate 10, and the source/drain regions 20, 19 arranged in the semiconductor layer. At least a drain region from among the source/drain regions comprises a lightly-doped region 14 and a heavily-doped region 4 arranged along a direction separating from the gate electrode, and the lightly-doped region is provided directly under the conductive sidewall via the gate insulating film.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种放宽漏极侧的电场的半导体器件及其制造方法，抑制雪崩击穿和热载流子的产生，并且通过减少重叠能力而以高速运行。解决方案：半导体器件具有MIS型场效应晶体管，其具有由多晶硅18和导电侧壁50组成的栅电极，该多晶硅18和导电侧壁50通过布置在一个表面上的半导体层9上的栅极绝缘膜17制备绝缘基板10和布置在半导体层中的源极/漏极区域20,19。源极/漏极区域中的至少一个漏极区域包括沿着与栅极分离的方向布置的轻掺杂区域14和重掺杂区域4，并且轻掺杂区域直接设置在导电侧壁下方经由栅极绝缘膜。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2010034217A Method of manufacturing organic thin-film transistor 审中-公开
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：JP2010034217A
公开(公告)日：2010-02-12
申请号：JP2008193541
申请日：2008-07-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KATO MIDORI , HATTORI KOJI , HATANO MUTSUKO , ISHIBASHI MASAYOSHI
IPC分类号： H01L21/336 , H01L29/786 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor capable of manufacturing a TFT using an organic semiconductor on a plastic substrate at a low cost with higher performance. SOLUTION: The method of manufacturing an organic thin-film transistor includes a step of forming an organic thin-film transistor on a first support substrate, and a step in which a second support substrate is laminated on the side opposed to the first support substrate and then the organic thin-film transistor is peeled from the first support substrate. It also comprise a step of forming a first electrode on the first support substrate, a step of forming an organic insulating film to cover the first electrode on the substrate, a step of forming a second electrode on the organic insulating film, a step of forming an organic semiconductor on the organic insulating film, and a step of forming a protective film on the organic semiconductor. The organic semiconductor is positioned on the side opposite to a peeling surface relative to the first electrode. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种制造薄膜晶体管的方法，该薄膜晶体管能够以低成本和高性能在塑料基板上制造使用有机半导体的TFT。解决方案：制造有机薄膜晶体管的方法包括在第一支撑基板上形成有机薄膜晶体管的步骤，以及在与第一支撑基板相对的一侧层叠第二支撑基板的步骤然后将有机薄膜晶体管从第一支撑基板剥离。它还包括在第一支撑衬底上形成第一电极的步骤，形成有机绝缘膜以覆盖衬底上的第一电极的步骤，在有机绝缘膜上形成第二电极的步骤，形成步骤有机绝缘膜上的有机半导体，以及在有机半导体上形成保护膜的工序。有机半导体相对于第一电极位于与剥离面相反的一侧。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010021170A Semiconductor device, and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010021170A
公开(公告)日：2010-01-28
申请号：JP2008177550
申请日：2008-07-08
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAWAMURA TETSUSHI , UCHIYAMA HIROYUKI , SAITO SHINICHI , WAKANA HIRONORI , HATANO MUTSUKO
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L27/00 , H01L29/417
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which includes an oxide TFT (Thin Film Transistor) having a channel layer of not larger than approximately 10 nm and operates at high speed by reducing contact resistance between the channel layer and a source electrode or between the channel layer and a drain electrode in the oxide TFT. SOLUTION: The oxide TFT is formed to be in a completely depleted state when OFF. Then a contact layer CTS is formed between the channel layer CHN and the source electrode ST, and a contact layer CTD is formed between the channel layer CHN and the drain electrode DT. Further, a ratio Cp/Cgi is smaller than 0.7, wherein Cgi is the gate insulating film capacitance between the gate electrode GT and the channel layer CHN, and Cp is the sum of parasitic capacitance between a structure other than the gate electrode GT and the channel layer CHN. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其包括具有不大于约10nm的沟道层的氧化物TFT（薄膜晶体管），并且通过降低沟道层和源极之间的接触电阻而高速操作电极，或氧化物TFT中的沟道层和漏电极之间。解决方案：当OFF时，氧化物TFT形成为完全耗尽状态。然后在沟道层CHN和源电极ST之间形成接触层CTS，并且在沟道层CHN和漏电极DT之间形成接触层CTD。此外，比率Cp / Cgi小于0.7，其中Cgi是栅极电极GT和沟道层CHN之间的栅极绝缘膜电容，Cp是除栅极电极GT和栅极电极GT之外的结构之间的寄生电容之和通道层CHN。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2005333150A Tft substrate and display device 有权
标题翻译： TFT基板和显示装置
公开(公告)号：JP2005333150A
公开(公告)日：2005-12-02
申请号：JP2005171796
申请日：2005-06-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HONGO MIKIO , UTO YUKIO , NOMOTO MINEO , NAKADA TOSHIHIKO , HATANO MUTSUKO , YAMAGUCHI SHINYA , OKURA OSAMU
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a display device having pixel transistors and driving transistors for driving the pixel transistors respectively formed on an identical substrate, adapted to raise mobilities in the active regions of the driving transistors and achieve speed-up thereof. SOLUTION: A polycrystalline silicon film 103 is formed on a major surface of a glass substrate 100 on which pixel transistors and driving transistors are to be formed, and continuously oscillated and rectangularly cross-sectioned laser light 105 is swept along a side of the relevant major surface on a peripheral edge along the relevant side. The polycrystalline silicon film 103, irradiated with the relevant laser light 105, transforms into crystal grains that extend in the sweep direction of the laser light while arrayed through grain boundaries 304, 304' in the direction that crosses the sweep direction, so that the crystal grains can be used as active regions of the driving transistors. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种具有像素晶体管和驱动晶体管的显示装置，用于驱动分别形成在相同基板上的像素晶体管，其适于提高驱动晶体管的有源区域中的迁移率并实现加速。解决方案：在玻璃基板100的主表面上形成多晶硅膜103，在该主表面上将形成像素晶体管和驱动晶体管，并且连续振荡并且矩形横截面的激光105沿着相关主面在相关边缘的边缘。用相关的激光105照射的多晶硅膜103沿着与扫描方向交叉的方向排列在晶界304,304'的同时沿着激光的扫掠方向转变成晶粒，从而晶体晶粒可以用作驱动晶体管的有源区。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005217213A Laser annealing method and laser annealer 有权
标题翻译：激光退火方法和激光雷达
公开(公告)号：JP2005217213A
公开(公告)日：2005-08-11
申请号：JP2004022461
申请日：2004-01-30
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： HONGO MIKIO , YAZAKI AKIO , HATANO MUTSUKO
IPC分类号： H01L21/20 , B23K26/073 , B23K26/08 , G02B27/09 , G02F1/13 , H01L21/268 , H01L21/77
CPC分类号： B23K26/0738 , B23K26/0853 , G02B27/0927 , G02B27/0966 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： PROBLEM TO BE SOLVED: To anneal a semiconductor film by scanning a substrate with a time modulated continuous oscillation laser beam shaped into an elongated shape at a high velocity without rotating the substrate. SOLUTION: A laser beam subjected to time modulation by a modulator 7 and shaped into an elongated shape by a beam shaper 10 is rotated about the optical axis of an image rotator 13 inserted between the beam shaper and the substrate thus rotating the longitudinal direction of the elongated laser beam about the optical axis on a substrate 15. At the time of annealing in the plurality of directions on the substrate 15, the laser beam shaped into an elongated shape is rotated on the substrate and a stage mounting the substrate moves only in the two directions, i.e. XY directions. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过在不旋转衬底的情况下以高速度形成为细长形状的时间调制连续振荡激光束扫描衬底来对半导体膜进行退火。解决方案：通过调光器7进行时间调制并通过光束整形器10成形为细长形状的激光束围绕插入光束整形器和衬底之间的图像旋转器13的光轴旋转，从而旋转纵向在基板15上的光轴周围的细长激光束的方向。在基板15上的多个方向退火时，成形为细长形状的激光束在基板上旋转，并且安装基板的台架移动只在两个方向，即XY方向。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005217209A Laser annealing method and laser annealer 审中-公开
标题翻译：激光退火方法和激光雷达
公开(公告)号：JP2005217209A
公开(公告)日：2005-08-11
申请号：JP2004022433
申请日：2004-01-30
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： HONGO MIKIO , YAZAKI AKIO , HATANO MUTSUKO , NODA TAKASHI , TAKASAKI YUKIO
IPC分类号： H01L21/324 , B23K26/073 , C30B13/24 , C30B29/06 , H01L21/20 , H01L21/268 , H01L29/04 , H01L29/786
CPC分类号： C30B13/24 , B23K26/0738 , C30B29/06 , H01L21/2026 , H01L29/04 , H01L29/78675
摘要： PROBLEM TO BE SOLVED: To obtain a laser annealing method and a laser annealer for annealing a semiconductor film by scanning it with a laser beam shaped into an elongated shape in which energy loss is reduced in a beam shaper for shaping the beam into an elongated shape, and the beam dimension and the scanning velocity are selected to attain lateral growth crystal stably with high throughput without being affected by variation in energy.
SOLUTION: A laser beam 3 subjected to time modulation by a modulator 7 is shaped into an elongated beam by means of a beam shaper 10. The beam shaper 10 sets the dimension in the scanning direction of the elongated beam in the range of 2-10 micron, more preferably in the range of 2-4 micron, the scanning velocity in the range of 300-1,000 mm/s, more preferably in the range of 500-1,000 mm/s. Consequently, energy efficiency is enhanced while retarding damage on the silicon thin film and a lateral growth crystal (stripe crystal) region is attained with high throughput by scanning a predetermined region on the substrate with a laser beam.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得激光退火方法和激光退火炉，用于通过用形成为波束成形器中的能量损失减小的细长形状的激光束扫描半导体膜，以将光束成形为选择细长形状，并且选择光束尺寸和扫描速度，以在不受能量变化影响的情况下以高生产率稳定地获得横向生长晶体。解决方案：通过调光器7进行时间调制的激光束3通过光束整形器10成形为细长的光束。光束整形器10将细长光束的扫描方向上的尺寸设定在 2-10微米，更优选在2-4微米范围内，扫描速度在300-1,000毫米/秒范围内，更优选在500-1,000毫米/秒的范围内。因此，通过用激光束扫描基板上的预定区域，能够提高能量效率，同时以高生产率来延缓硅薄膜上的损伤和横向生长晶体（条纹晶体）区域。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005099427A Display panel manufacturing method and display panel 有权
标题翻译：显示面板制造方法和显示面板
公开(公告)号：JP2005099427A
公开(公告)日：2005-04-14
申请号：JP2003333090
申请日：2003-09-25
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： YAZAKI AKIO , HONGO MIKIO , HATANO MUTSUKO , SAITO YUTAKA , OKURA OSAMU
IPC分类号： G02F1/1368 , B23K26/06 , B23K26/073 , G09F9/30 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L27/1229 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： PROBLEM TO BE SOLVED: To form a silicon film in a crystallinity complying with the performance required for various kinds of circuits at high throughput, on an insulation substrate constituting a display panel. SOLUTION: An amorphous silicon film on the insulation substrate 50 to be the separate display panel of the large-sized insulation substrate 10 is irradiated with a linearly concentrated constant wave (CW) solid state laser light 40, while performing the scanning at a constant velocity in the width direction S of the concentrated light, in which a pixel part 51 and peripheral circuit parts 52, 53, and 54 in the same insulation substrate are irradiated with the power density to be into the prescribed crystallinities, by performing the time modulation of the laser light, and are modified into the crystalline silicon film complying with the performance required for the thin film transistor circuits fabricated in the pixel part 51 and the peripheral circuits parts 52, 53, and 54. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在构成显示面板的绝缘基板上，以高产量形成符合各种电路所需的性能的结晶度的硅膜。解决方案：在绝缘基板50上作为大尺寸绝缘基板10的分开的显示面板的非晶硅膜用线性集中恒定（CW）固态激光40照射，同时在通过执行将功率密度照射到规定结晶度的同一绝缘基板中的像素部51和外围电路部52,53,54的集中光的宽度方向S上的恒定速度，激光的时间调制，并且被修改成符合在像素部分51和外围电路部分52,53和54中制造的薄膜晶体管电路所需的性能的结晶硅膜。版权所有（ C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式