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1. 发明专利

JP2003311404A Seal-welding method for core supporting hole in turbine blade and turbine blade 有权
标题翻译：在涡轮叶片和涡轮叶片中支撑孔的密封焊接方法
公开(公告)号：JP2003311404A
公开(公告)日：2003-11-05
申请号：JP2002120201
申请日：2002-04-23
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TSUKAMOTO TAKESHI , MIYAZAKI KUNIO
IPC分类号： B23K9/23 , B23K9/00 , B23K9/02 , B23K15/00 , B23K26/00 , B23K26/20 , B23K103/08
摘要： PROBLEM TO BE SOLVED: To prevent defective welding caused by the variation of thickness of a blade when a core supporting hole formed in the turbine blade composed of nickel-based heat resistance alloy is seal-welded. SOLUTION: In the seal-welding method for the core supporting hole in the turbine blade formed with the nickel-based heat resistance alloy, the hole is formed by removing the core supporting part before a core elution process in the turbine blade cast made with a precision casting. Further, after performing a pattern-working for transcribing a prescribed excess thickness shape on the welded metal when this hole is sealed with the welding metal to the core at the lower part of this hole, a filler material composed of the nickel-based alloy is supplied into this hole to perform the seal-welding. Therefore, the yield in the turbine blade production and the reliability of the blade are improved. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了防止由形成在由镍基耐热合金构成的涡轮叶片中的芯支撑孔密封焊接时由于叶片的厚度变化引起的焊接不良。解决方案：在形成有镍基耐热合金的涡轮叶片中的芯支撑孔的密封焊接方法中，通过在涡轮叶片铸造中的核心洗脱过程之前除去芯部支撑部而形成孔用精密铸造制成。此外，当该孔被焊接金属密封在该孔的下部的芯上时，在对焊接金属进行用于转印规定的多余厚度形状的图案加工之后，由镍基合金构成的填充材料为供给到该孔中进行密封焊接。因此，提高了涡轮叶片的生产量和叶片的可靠性。版权所有（C）2004，JPO

2. 发明专利

JP2003222026A METHOD FOR MANUFACTURING TURBINE BLADE, AND TURBINE BLADE 审中-公开
公开(公告)号：JP2003222026A
公开(公告)日：2003-08-08
申请号：JP2002020875
申请日：2002-01-30
申请人： HITACHI LTD
发明人： TSUKAMOTO TAKESHI , MIYAZAKI KUNIO , INAGAKI MASATOSHI
IPC分类号： F01D5/18 , B23K11/02 , C22C19/05 , F01D5/28 , F02C7/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a gas turbine blade by integrally joining a plurality of members of nickel group heat resistant alloy without causing cracks or deterioration in properties of the base material. SOLUTION: In the junction method for manufacturing the turbine blade by joining a plurality of members, the members are pressurized so that predetermined pressure is applied to junction surfaces of the members, pulse-like voltage is applied to the members so as to energize the same, the junction portions are heated by heat generated by resistance in the junction surfaces and the interiors of the members, and the members are joined to one another by diffused junction. According to the method, preferable junction is realized without mostly changing the crystallinity and mechanical property of the base material. COPYRIGHT: (C)2003,JPO

3. 发明专利

JP2001162372A PULSE ARC WELDING EQUIPMENT 失效
公开(公告)号：JP2001162372A
公开(公告)日：2001-06-19
申请号：JP34609999
申请日：1999-12-06
申请人： HITACHI LTD
发明人： KUMASAKA TAKAO , KONUMA AKIRA , MIYAZAKI KUNIO
IPC分类号： B23K9/127 , B23K9/073 , B23K9/09
摘要： PROBLEM TO BE SOLVED: To provide a high frequency pulse are welding equipment having an excellent controllability of a torch driving part which adjusts an are length. SOLUTION: In a pulse arc welding equipment provided with a welding torch having an arc electrode, a pulse welding power supply which supplies a high frequency pulse current which periodically generates a high frequency pulse arc voltage on the arc electrode, a torch driving part furnished with a servo motor or the like, which adjusts the gap between the arc electrode of the welding torch and welded base material, and an arc voltage detecting part which detects the voltage between the arc electrode and the welded base material, the equipment is characterized by the face that a unit of averaging processing in an ON-period is provided for deriving an average value of the arc voltage during a time interval from the beginning of the rice of the pulse arc voltage to the end of its fall, and the torch driving unit is so adjusted and actuated that the average value of the voltage in the ON-period derived by the part of averaging processing in the ON-period approximately coincides with a reference value of the arc voltage.

4. 发明专利

JPH0653684A THIN FILM MULTILAYER WIRING BOARD AND MODULE USING THE SAME 失效
公开(公告)号：JPH0653684A
公开(公告)日：1994-02-25
申请号：JP20231292
申请日：1992-07-29
申请人： HITACHI LTD
发明人： SATSUU YUUICHI , MIWA TAKAO , SUZUKI MASAHIRO , MIURA OSAMU , MIYAZAKI KUNIO , TAKAHASHI AKIO , KOBI AKIO , KOBAYASHI FUMIYUKI , OKI NOBUAKI , IMAI TSUTOMU , TAKENAKA TAKATSUGU
IPC分类号： H05K3/46 , H05K9/00
摘要： PURPOSE:To obtain a high density mounting module in which an LSI is placed on a thin film multilayer wiring board by setting a thermal expansion coefficient of an entire board to a special value or less. CONSTITUTION:A thin film multilayer wiring board comprises a plurality of thin film wiring layers 4 laminated to be formed with fine wiring pattern on a surface of an insulating layer 1, and a wiring layer (shield layer) 3 made of low thermal expansion metal having an elastic modulus of 100GPa or more and formed between the layers 4 through the layer 1 in such a manner that the entire thermal expansion coefficient is 1X10 K or less at the ambient temperature. Thus, the layer (the shield layer) 3 having the high elastic modulus restricts the thermal expansions of the layer 1 of organic resin and the layer 4 to suppress the thermal expansion of the entire circuit board thereby to prevent peeling between the wiring layers or crack of the insulating layer, and to prevent peeling, etc., of an LSI chip placed on the board.

5. 发明专利

JPH0292535A COMPOSITE MOLDING OF METAL AND POLYIMIDE 失效
公开(公告)号：JPH0292535A
公开(公告)日：1990-04-03
申请号：JP24398688
申请日：1988-09-30
申请人： HITACHI LTD
发明人： NUMATA SHUNICHI , MIWA TAKAO , IKEDA TAKAE , FUJISAKI KOJI , SHIMANOKI HISAE , MIYAZAKI KUNIO , MIURA OSAMU , WATANABE RYUJI , MIYAMOTO TOSHIO , OGOSHI YUKIO
IPC分类号： B32B15/088 , B32B15/08 , C08G73/10 , H01B1/22 , H01B3/30 , H01L21/48 , H01L23/14 , H05K1/03
摘要： PURPOSE:To constitute the title composite molding so that it is not deteriorated even not under a specific atomosphere such as a reducing atmosphere by preventing heat deterioration of a polyimide film, by a method wherein an acid functional group such as a carboxyl group or a sulfone group in a polyimide precursor is masked. CONSTITUTION:The title composite molding is manufacture by including a process where a polyimide precursor is imidated by coming into contact with a metal. The polyimide precursor is obtained by masking an acid functional group such as a carboxyl group or a sulfone group of the precursor. In other words, when the metal is dissolved under the existence of carboxylic acid of polyamic acid and then the same is exposed under a high temperature, an imide annulus is pyrolytically decomposed by the metal and at the same time a metal oxide in a particulate state is precipitated away. Then a similar phenomenon to this is observed even on the polyimide precursor having a sulfone acid group and the existence of the acid functional group permits its dissolution is the metal.

6. 发明专利

JPH0239535A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH0239535A
公开(公告)日：1990-02-08
申请号：JP18846988
申请日：1988-07-29
申请人： HITACHI LTD
发明人： SUWA MOTOHIRO , ONUKI HITOSHI , KAWABUCHI YASUSHI , SHIODA KATSUHIKO , MIYAZAKI KUNIO
IPC分类号： H01L21/3213 , H01L21/28 , H01L21/3205 , H01L23/52 , H01L29/43
摘要： PURPOSE:To improve electromigration resistance, stress migration resistance by adding calcium, cerium, lanthanum, manganese by specific amounts to pure aluminum or aluminum alloy, containing a specific amount of silicon, of a wiring film. CONSTITUTION:Ca, Ce, La, Mn are added by 0.5-1atom% to pure aluminum or aluminum alloy containing silicon by less than 3weight% in an aluminum wiring film, and after applying patterning processing, annealing is done at 400-500 deg.C for ten minutes. Hereby, the grain boundary structure of wiring becomes bomboo structure, and electromigration resistance improves. Furthermore, at the time, by cooling added alloy components at a cooling speed of 50-200 deg.C/min, a part of the added alloy components are precipitated as compounds of aluminum. And residual added alloy components are solidly dissolved in aluminum matrix. By making it into such fine organization conditions, stress migration resistance is improved.

7. 发明专利

JPH01305595A POLYIMIDE FILM WITH COPPER WIRING 失效
公开(公告)号：JPH01305595A
公开(公告)日：1989-12-08
申请号：JP13550488
申请日：1988-06-03
申请人： HITACHI LTD
发明人： WATANABE HIROSHI , MIURA OSAMU , MIYAZAKI KUNIO , OGOSHI YUKIO , MIYAMOTO TOSHIO
IPC分类号： C23C14/06 , H05K3/38
摘要： PURPOSE:To make a copper film of large adhesive strength on a polyimide surface by forming a polar group such as CF2 on the surface of the polyimide film of low thermal expansion, making a metal oxide layer of strong polarity such as TiO2 thereon and further forming a pure metal such as Ti to apply copper wiring. CONSTITUTION:In a polyimide film with copper wiring composed of structure of an expression whose thermal expansion coefficient is equal to or less than 3X10 / deg.C, the carbon of 50% or more in polyimide shows -COO- or CF2. A polar group such as CF2 and -COO- is formed on the surface of the polyimide film 1 and a metal oxide layer 3 of strong polarity such as TiO2, CrO3, Al2O3 and NiO is formed by introducing O2 gas of fixed pressure in a vapor deposition chamber to deposit. Thereafter pure metals such as Ti and Cr are formed. Copper wiring is formed thereon and a copper film of large adhesive strength is shaped on a polyimide surface.

8. 发明专利

JPH01206037A COMPOSITE STRENGTH MEMBER 失效
公开(公告)号：JPH01206037A
公开(公告)日：1989-08-18
申请号：JP32333288
申请日：1988-12-23
申请人： HITACHI LTD
发明人： OKAMURA HISANOBU , MIYAZAKI KUNIO , AKIYAMA HIROSHI , ITO SHINICHI , YASUDA TOMIRO , NAKAMURA KOSUKE , OGOSHI YUKIO , KAMOSHITA TAKAO , CHIBA AKIO
IPC分类号： G21B1/11 , B32B15/04 , C04B37/02 , C22C49/00 , G21B1/00 , G21B1/17
摘要： PURPOSE:To obtain the composite strength member with the best use of ceramic property, while its cooling property is excellent and its thermal stress is small, by sticking metallurgically the laminate composed of a ceramic tile and the composite body in which carbon fiber having no compatibility with metal, is buried in the metal containing copper as its main component to each other. CONSTITUTION:The laminate in which the composite body 5 made of carbon fiber buried in metal and a ceramic tile 4 are brazed, is formed. The ceramic tile is the sintered material containing beryllium and its compound in the amount of 0.1-5wt.% in terms of beryllium, and wherein 80wt.% or more is silicon carbide. Said tile has the high thermal conductivity of 0.2cal/cm.sec. deg.C or more in room temperature and the electric resistance of 10 OMEGA.cm or more in room temperature. A metallic substrate 5 is made of nonmagnetic stainless steel and has a corrugated structure the inside of which is forcedly cooled by a coolant. The ceramic tile 4 is jointed to the metallic substrate by way of the intermediate body composed of the metallic member having smaller thermal expansion coefficient than that of the metallic substrate 5 in room temperature. The intermediate body is a composite body in which 30-60vol.% of carbon fiber is buried, with the copper as its main component.

9. 发明专利

JPH01140796A MOUNTING SUBSTRATE OF CERAMIC AND COPPER/POLYIMIDE WIRING 失效
公开(公告)号：JPH01140796A
公开(公告)日：1989-06-01
申请号：JP29762187
申请日：1987-11-27
申请人： HITACHI LTD
发明人： WATANABE HIROSHI , MIURA OSAMU , MIYAZAKI KUNIO , OGOSHI YUKIO
IPC分类号： H05K3/46 , H01L23/52
摘要： PURPOSE:To form wirings of 10mum of width on a mullite substrate by forming a flattened layer on a ceramic substrate and forming copper/polyimide interconnections thereon. CONSTITUTION:A mullite substrate 1 is coated with polyimide resin 3, baked, flattened, and formed with Cu 4/polyimide wirings 5 thereon. The adhesive properties of the mullite 1 to the resin 3 is improved by aluminum chelating process 2. Since the resin 3 has excellent heat resistance and is varnish and viscous before curing, the surface of the mullite 1 can be flattened with the resin 3. That is, since the defect of the substrate is flattened with the polyimide, fine wirings of 10mum or less of width can be formed, and multilayer interconnections can be formed in high density on the mullite. Further, since the adhesive properties of a boundary are improved, the interconnections having high reliability are obtained.

10. 发明专利

JPH01124282A WIRING STRUCTURE BODY AND ITS FORMATION 失效
公开(公告)号：JPH01124282A
公开(公告)日：1989-05-17
申请号：JP28284287
申请日：1987-11-09
申请人： HITACHI LTD
发明人： MIURA OSAMU , WATANABE HIROSHI , MIYAZAKI KUNIO , OGOSHI YUKIO , OGINOYA MITSUO
IPC分类号： H05K3/38 , H01L23/00 , H01L23/29 , H05K1/03
摘要： PURPOSE:To enhance contact adhesion performance between an insulating film and a wiring conductor and to enhance reliability of moistureproofness at an interface by a method wherein a mixed layer composed of the insulating film containing a hydropholic group and of a metal material constituting the wiring conductor is provided at a boundary part between the wiring conductor and the insulating film. CONSTITUTION:While the surface of a polyimide film 2 is being irradiated by a plasma of individual gases of helium and oxygen and, in succession, the surface of a polyimide is being irradiated with ions of helium, Al is electron- evaporated; after the evaporation, a photoetching operation is executed and a wiring conductor 4 of Al is formed. In addition, a process identical to this is repeated and an Al wiring part is laminated; an LSI 7 is bonded by using a solder 6; a multilayer wiring structure body is manufactured. A mixed layer formed at an interface between the polyimide and Al or Cu prevents water from penetrating because an ethyl group (-C2H5) as a hydrophobic group exists; in addition, the Al and the polyimide are bonded by laying a carbonyl group as a hydrophile group; a bonding force between both is enhanced.

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