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    • 1. 发明专利
    • Composition for forming silica-based film for inkjet, method for forming silica-based film, semiconductor device and solar cell system
    • 用于形成用于墨水的二氧化硅基膜的组合物,形成二氧化硅膜的方法,半导体器件和太阳能电池系统
    • JP2014132044A
    • 2014-07-17
    • JP2011183951
    • 2011-08-25
    • Hitachi Chemical Co Ltd日立化成株式会社
    • YOSHIKAWA TAKAHIROOKADA YUHEINOBE SHIGERU
    • C09D183/06C01B33/12C09D1/00C09D7/12C09D11/00C09D183/04H01L31/046H01L31/05
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To provide a composition for forming a silica-based film for inkjet, the composition which can be discharged without clogging an inkjet nozzle even when operations of non-discharging and discharging are repeated, and which can form a drawing pattern having a nearly rectangular cross-sectional shape.SOLUTION: The composition for forming a silica-based film for inkjet comprises a silicon compound obtained by hydrolysis and polycondensation of a compound expressed by general formula RSiX, a solvent, and a surface controlling agent. The solvent comprises γ-butyrolactone, a second solvent having a boiling point of 80 to 100°C, and a third solvent having a boiling point of 180 to 230°C, in which a mass ratio of the γ-butyrolactone with respect to the whole mass of the solvent is 0.2 or more, and a mass ratio of the second solvent with respect to the whole mass of the solvent is 0.2 to 0.5. In the above formula, Rrepresents an organic group having 1 to 20 carbon atoms; X represents a hydrolyzable group; and n represents an integer of 0 to 2.
    • 要解决的问题:为了提供一种用于形成用于喷墨的二氧化硅基膜的组合物,即使重复进行非排放和排出的操作,也可以排出而不堵塞喷墨嘴的组合物,并且可以形成具有 近似矩形的横截面形状。解决方案:用于形成用于喷墨的二氧化硅基膜的组合物包括通过由通式RSiX表示的化合物,溶剂和表面控制剂的水解和缩聚获得的硅化合物。 溶剂包括γ-丁内酯,沸点为80〜100℃的第二溶剂和沸点为180〜230℃的第三溶剂,其中γ-丁内酯的质量比相对于 溶剂的整体质量为0.2以上,第二溶剂相对于溶剂整体的质量比为0.2〜0.5。 在上式中,R表示碳原子数1〜20的有机基团。 X表示水解性基团; n表示0〜2的整数。
    • 5. 发明专利
    • Resin composition and method of manufacturing organic layer using the same, organic layer, and semiconductor element having organic layer
    • 树脂组合物和使用其的有机层的制造方法,有机层和具有有机层的半导体元件
    • JP2014080541A
    • 2014-05-08
    • JP2012230731
    • 2012-10-18
    • Hitachi Chemical Co Ltd日立化成株式会社
    • OKADA YUHEIAOKI MASARUMATSUTANI HIROSHIKASUYA KEINOBE SHIGERU
    • C08L61/06C08F220/18C08L33/04G03F7/023H01L21/027
    • PROBLEM TO BE SOLVED: To provide a resin composition capable of forming a pattern resin film having no residual in concavity in a process of forming the pattern resin film, a method of manufacturing an organic layer using the resin composition, the organic layer obtained by the method of manufacturing, and a semiconductor element having the organic layer.SOLUTION: A resin composition contains (a) an alkali soluble resin having a phenolic hydroxyl group and (b) an acrylic resin, and the (b) acrylic resin has absorbance at 660 nm measured by a spectrophotometer after agitating and mixing with tetramethylammonium hydroxide (TMAH) at the concentration of 0.3 mass% for 30 seconds and standing for 10 minutes of 0.06 or less. It is preferable to contain further (c) a photosensitizer and (d) a crosslinking agent. A method of manufacturing an organic layer includes a process of coating the resin composition on a base plate and drying it to form a resin film, a process of exposing and developing the resin film to form a pattern resin film, and a process of heating the pattern resin film to form an organic layer.
    • 要解决的问题:提供一种能够在形成图案树脂膜的工艺中形成不具有残留残留的图案树脂膜的树脂组合物,使用该树脂组合物制造有机层的方法,通过 制造方法和具有有机层的半导体元件。溶液:树脂组合物含有(a)具有酚羟基的碱溶性树脂和(b)丙烯酸树脂,(b)丙烯酸树脂在660 在用0.3质量%的浓度的四甲基氢氧化铵(TMAH)搅拌混合30秒后,用分光光度计测定,静置10分钟为0.06以下。 优选还含有(c)光敏剂和(d)交联剂。 制造有机层的方法包括在基板上涂布树脂组合物并干燥以形成树脂膜的方法,使树脂膜曝光和显影以形成图案树脂膜的方法,以及加热 形成树脂膜以形成有机层。
    • 8. 发明专利
    • Cmp polishing liquid for polishing palladium and polishing method
    • CMP抛光液用于抛光和抛光方法
    • JP2013041856A
    • 2013-02-28
    • JP2009288874
    • 2009-12-21
    • Hitachi Chemical Co Ltd日立化成株式会社
    • MINAMI HISATAKAOKADA YUHEI
    • H01L21/304B24B37/00C09K3/14
    • C09K3/1463C09G1/02H01L21/3212
    • PROBLEM TO BE SOLVED: To provide a CMP polishing liquid capable of improving at least polishing speed of a palladium layer as compared with a case where conventional CMP polishing liquids are used, and a polishing method using the CMP polishing liquid.SOLUTION: There is provided a CMP polishing liquid for polishing palladium, which contains 1,2,4-triazole, phosphoric acids, an oxidant, and abrasive grains having a degree of association of 1.5 or more and less than 2.5. There is also provided a method for polishing a substrate, in which a substrate is polished with a polishing cloth while a CMP polishing liquid is supplied between the substrate and the polishing cloth. In the method, the substrate has a palladium layer, and the CMP polishing liquid contains 1,2,4-triazole, phosphoric acids, an oxidant, and abrasive grains having a degree of association of 1.5 or more and less than 2.5.
    • 要解决的问题:与使用常规CMP抛光液的情况相比,提供一种能够至少提高钯层的抛光速度的CMP抛光液和使用CMP抛光液的抛光方法。 解决方案:提供了用于抛光钯的CMP抛光液,其包含1,2,4-三唑,磷酸,氧化剂和具有1.5以上且小于2.5的缔合度的磨料颗粒。 还提供了一种用于抛光基材的方法,其中在抛光布之间将CMP抛光液体供给到抛光布中抛光基板。 在该方法中,基板具有钯层,CMP研磨液含有1,2,4-三唑,磷酸,氧化剂和结合度为1.5以上且小于2.5的磨粒。 版权所有(C)2013,JPO&INPIT
    • 10. 发明专利
    • Polishing agent
    • 抛光剂
    • JP2014033238A
    • 2014-02-20
    • JP2013240077
    • 2013-11-20
    • Hitachi Chemical Co Ltd日立化成株式会社
    • ONO YUTAKASHINODA TAKASHIOKADA YUHEI
    • H01L21/304B24B37/00B24B37/04
    • H01L21/3212C09G1/02C09K3/1463H01L21/7684H01L21/76898
    • PROBLEM TO BE SOLVED: To provide a polishing agent that allows smooth polishing of a copper film at high polishing speed, and allows polishing treatment in a short time, thereby capable of securing sufficient productivity, even for use in applications that require polishing of thick metal films on high performance circuit boards, TSVs or the like.SOLUTION: A polishing agent is obtained by adjusting a composition to have a pH of 1.5-4, the composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water. The amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is 0.10 mol or more with respect to 1 kg of the composition without the organic acid, the organic acid contains two or more carboxyl groups, and the logarithm of the inverse of the first acid dissociation constant (pKa1) is 3 or less.
    • 要解决的问题:提供一种抛光剂,其能够以高抛光速度平滑地抛光铜膜,并且允许在短时间内进行抛光处理,从而能够确保足够的生产率,甚至用于需要研磨厚金属的应用中 高性能电路板,TSV等的薄膜。解决方案:通过调节pH为1.5-4的组合物获得抛光剂,该组合物含有无机酸,氨基酸,保护膜形成剂, 研磨剂,氧化剂,有机酸和水。 相对于1kg不含有机酸的组合物,有机酸含有2个以上的羧基,对数为10以上,将没有有机酸的组合物的pH升高至4所需的氢氧化钾的量为0.10以上 的第一酸解离常数(pKa1)的倒数为3以下。