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    • 1. 发明专利
    • Device for growing single crystal
    • 用于生长单晶的装置
    • JPS61136988A
    • 1986-06-24
    • JP26040684
    • 1984-12-10
    • Hitachi Cable Ltd
    • SAITO HIROSHISHIMADA TAKASHIOHATA KAZUMISHIBATA MASATOMOTAKAHASHI YOSHIHARU
    • C30B15/00H01L21/18H01L21/208
    • PURPOSE: To check the deterioration of a seed crystal and to prevent the deterioration of a single crystal which is pulled up by providing a cooling means for protecting the seed crystal before and the seeding is carried out in the titled device for growing a single crystal by a pulling method.
      CONSTITUTION: A crucible 6 is arranged in a pressure vessel 5, a semiconductor material is charged into the crucible 6, and the material is heated by a heater 7 and melted. A pulling shaft 1 is then lowered, the seeding is carried out by a seed crystal 2 attached to the leading end of the shaft, and a single crystal is pulled up. In this case, the seed crystal 2 before the seeding is carried out is cooled by a refrigerant circulating through the inside of a refrigerant circulating pipe 3 which is coiled around the side periphery of the seed crystal 2. Consequently, the formation of chapping on the seed crystal 2 before the seeding is carried out due to the heat on the crucible 6 side which is transmitted by convection and radiation to the crystal is prevented. Accordingly, the deterioration of a single crystal which is pulled up can be prevented.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:为了检查晶种的劣化并防止通过提供用于保护晶种的冷却装置并且在用于生长单晶的标题装置中进行接种来提升单晶的劣化,以通过 一种牵引方式。 构成:将坩埚6配置在压力容器5内,将半导体材料装入坩埚6内,通过加热器7进行加热而熔融。 然后将牵引轴1下降,通过连接到轴的前端的晶种2进行接种,并且单个晶体被拉起。 在这种情况下,进行接种前的种子晶体2由循环在制冷剂循环管3的内部的制冷剂冷却,制冷剂循环管3围绕晶种2的侧缘盘绕。因此,在 由于通过对流和辐射传递到晶体的坩埚6侧的热量,防止了接种之前的晶种2。 因此,可以防止上拉的单晶的劣化。
    • 2. 发明专利
    • Outer diameter detection for single crystal made by the lec method with x-rays
    • 通过X-RAYS的LEC方法对单晶的外直径检测
    • JPS6163597A
    • 1986-04-01
    • JP18425384
    • 1984-09-03
    • Hitachi Cable Ltd
    • SHIMADA TAKASHIOHATA KAZUMISAITO HIROSHI
    • C30B15/26C30B27/02
    • PURPOSE: The value which is obtained by measuring the distance between the side face of the single crystal and the side wall of the crucible opposing to the crystal by roentgenographic pictures is subtracted from the radius of the crucible to detect the outer diameter of the single crystal even with a beam width of X-rays narrower than the outer diameter of the single crystal.
      CONSTITUTION: A seed crystal 4 is brought into contact with the melt of starting materials for single crystal and the liquid selant 2 and pulled up to allow a single crystal 5 to grow at the center of the crucible. An X-rays generator 7a and an X-ray detector 9a are set oppositely in front and in rear of the crystal 5 so that the X-rays 9a from the generator 7a may pass through the center of the crucible 3 and the side wall opposing to it. Thus, the distance between the side of the single crystal 5 and the opposing side wall of the crucible is measured with a roentogenographic picture of the single crystal 5. The value is subtracted from the radius of the crucible to detect the outer diameter of the single crystal 5.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:从坩埚的半径中减去单晶体的侧面与坩埚的与晶体相对的侧壁之间的距离来测定的值,以检测单晶的外径 即使X射线的光束宽度比单晶的外径窄。 结构:将晶种4与单晶原料和液体助熔剂2的熔体接触并拉起,使单晶5在坩埚的中心生长。 X射线发生器7a和X射线检测器9a在晶体5的前后相对设置,使得来自发生器7a的X射线9a可以穿过坩埚3的中心,并且侧壁相对 给它 因此,单晶5的一侧与坩埚的相对侧壁之间的距离用单晶5的光谱图测量。从坩埚的半径减去该值以检测单晶5的外径 水晶5。
    • 3. 发明专利
    • Detection of outer diameter of crystal produced by liquid-encapsulated pulling up method, by x-ray
    • 用X射线检测由液体提取法提取的晶体外径的检测
    • JPS6144789A
    • 1986-03-04
    • JP16465984
    • 1984-08-06
    • Hitachi Cable Ltd
    • SHIMADA TAKASHIOHATA KAZUMISAITO HIROSHI
    • C30B15/26C30B15/00C30B27/02
    • PURPOSE: To calculate and determine the outer diameter of a crystal, easily, in small error, with a relatively low X-ray intensity, by irradiating a crystal with X-ray from the direction perpendicular to the pulling up axis, and measuring the thickness and the surface position of the liquid encapsulant before and after the pulling of the crystal.
      CONSTITUTION: The molten liquid 3 of the crystal raw material encapsulated with the liquid encapsulant 2 in the crucible 4 heated with the heater 5, is irradiated with the X-ray generated from the X-ray generator 6 placed outside of the heater 5 perpendicular to the pulling up axis. The thickness (t, t') of the encapsulant and the distance (l, l') between the bottom of the crucible 4 and the surface of the encapsulant are determined from the image of the transmitted X-ray detected by the X-ray image detector 7 when the lower end of the seed crystal is brought into contact with the upper surface of the molten crystal raw material liquid, and when the seed crystal is pulled up and the grown crystal is emerged from the surface of the encapsulant 2 following the seed crystal 1. The outer diameter of the crystal can be calculated from the variation of the above values.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:通过从与上拉轴垂直的方向用X射线照射晶体,以较小的误差容易地计算和确定晶体的外径,以较低的X射线强度,并测量厚度 以及液晶封装剂在拉晶之前和之后的表面位置。 构成:用加热器5加热的坩埚4中用液体密封剂2封装的结晶原料的熔融液3照射到放置在加热器5外部的X射线发生器6产生的X射线,垂直于 拉起轴。 密封剂的厚度(t,t')和坩埚4的底部与密封剂表面之间的距离(1,1')由X射线检测的透射X射线的图像确定 当晶种的下端与熔融晶体原料液体的上表面接触时,图像检测器7,并且当晶种被拉起并且生长的晶体从密封剂2的表面出来之后 晶种1.晶体的外径可以根据上述值的变化计算。
    • 4. 发明专利
    • Optical fiber connecting part having directional property
    • 光纤连接部分具有方向性
    • JPS5746218A
    • 1982-03-16
    • JP12287180
    • 1980-09-04
    • Hitachi Cable Ltd
    • SHIMADA TAKASHIKOYAMA YUKIOYAMAGUCHI HIDEO
    • G02B6/24G02B6/26G02B6/42
    • G02B6/262G02B6/4207
    • PURPOSE:To decrease the quantity of reflection light on the connecting end of optical fibers whose core diameter is different, by deflecting in parallel the center axes of the connecting end of the optical fibers. CONSTITUTION:In case when a fiber 1 having a core 2 of small diameter, surrounded by a clad 3 is connected with a core 6 of large diameter, surrounded by a clad 7, when the axes of both the cores are deflected and connected in parallel as shown in the figure, decrease of the quantity of light which is transmitted from the core to the core 6 is a little comparatively, and the quantity of light which is transmitted from the core 6 to the core 2 decreases more than its area ratio. Accordingly, reflected rays at the side of a fiber 5 in the connecting end decrease remarkably, and quality of an optical signal which is transmitted from the optical fiber 1 to 5 is elevated.
    • 目的:通过使光纤的连接端的中心轴平行偏转,减小芯径不同的光纤的连接端的反射光量。 构成:当具有由包层3包围的小直径的纤芯2的纤维1与由包层7围绕的大直径的芯6连接时,当两个芯的轴线被偏转并并联连接时 如图所示,从芯部向芯部6透射的光量的减少稍微比较少,从芯部6向芯部2透射的光量比其面积率大。 因此,连接端的光纤5侧的反射光线显着降低,从光纤1〜5发送的光信号的质量提高。
    • 5. 发明专利
    • Forming method for inclined end surface of optical fiber
    • 光纤光纤终端表面形成方法
    • JPS5724903A
    • 1982-02-09
    • JP10083880
    • 1980-07-23
    • Hitachi Cable Ltd
    • SHIMADA TAKASHIKOYAMA YUKIOYAMAGUCHI HIDEO
    • G02B6/00B26D3/08C03B37/16G02B6/25
    • G02B6/25
    • PURPOSE:To obtain a smooth inclined end surface by applying flaws at a position where bending stress of an optical fiber was produced. CONSTITUTION:By supporting an optical fiber 1 with a pair of clamps 2a, 2b, tensile stress and torque are given, and by bending the central part along a convex surface of a jig 3, at this part bending stress is produced. When with this state a maximum part of bending stress is pressurized with a diamond cutter 4, etc., and the part is scraped, stress rupture is produced and a smooth inclined end surface is obtained. An inclination angle at the inclined end surface changes with torque and bending stress. If torque is not applied, an end surface perpendicular to the center of the optical fiber 1 is obtained.
    • 目的:通过在产生光纤的弯曲应力的位置处施加缺陷来获得平滑的倾斜端面。 构成:通过支撑具有一对夹具2a,2b的光纤1,提供拉伸应力和扭矩,并且通过沿着夹具3的凸形表面弯曲中心部分,在该部分产生弯曲应力。 当用这种状态时,用金刚石切割器4等加压最大部分的弯曲应力,并且刮削该零件,产生应力破裂并获得平滑的倾斜端面。 倾斜端面倾斜角随扭矩和弯曲应力而变化。 如果不施加扭矩,则获得垂直于光纤1的中心的端面。
    • 6. 发明专利
    • Method and apparatus for manufacturing single crystal
    • 制造单晶的方法和装置
    • JPS61136994A
    • 1986-06-24
    • JP25823384
    • 1984-12-06
    • Hitachi Cable Ltd
    • TAKAHASHI YOSHIHARUSAITO HIROSHIOHATA KAZUMISHIBATA MASATOMOSHIMADA TAKASHINAKAGAWA JUNKICHI
    • C30B27/02H01L21/18H01L21/208
    • PURPOSE: To obtain a single crystal having high purity and low dislocation and which is semiinsulating by exchanging a liq. sealant wherein impurities, etc., are mixed and melted in the preparation stage, etc., for a fresh liq. sealant when a single crystal is manufactured by the liq. sealant pulling method.
      CONSTITUTION: A crucible 2 is arranged in a high-pressure vessel 1, and a raw material 3 and a liq. sealant 4 are charged into the crucible 2. The crucible 3 is heated in the high-pressure atmosphere by a heater 5 to melt the raw material 3 and the liq. sealant 4. Since impurities, etc. may be mixed into the materials in the preparation and arrangement stages, the molten liq. sealant 4 is sucked up into a recovery vessel 6 by utilizing the pressure difference and recovered. Then a liq. sealant 24 in a filled vessel 7 is pushed out from a filling port 17 by the pressure of the high-pressure gas, and charged onto the raw material melt 3 in the crucible 2. After a specified time, seeding is carried out by a seed crystal 15 attached to the leading end of a lifting shaft 13 and a single crystal is pulled up.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:获得纯度高,位错低的单晶,并通过交换液晶进行半绝缘。 用于新鲜液体的在制备阶段等中混合和熔化杂质等的密封剂。 单晶由liq制造时的密封剂。 密封剂拉拔法。 构成:坩埚2配置在高压容器1中,原料3和液体。 将密封剂4装入坩埚2.坩埚3通过加热器5在高压气氛中加热,熔化原料3和液体。 密封剂4.由于杂质等可以混合在制备和排列阶段的材料中,所以熔融液体。 通过利用压差将密封剂4吸入回收容器6并回收。 然后一个liq。 填充容器7中的密封剂24通过高压气体的压力从填充口17被推出,并被装入坩埚2中的原料熔体3上。在规定的时间之后,种子由种子 附着在提升轴13的前端的晶体15被拉起。