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1. 发明专利

JP2004031904A Memory cell 审中-公开
公开(公告)号：JP2004031904A
公开(公告)日：2004-01-29
申请号：JP2003050503
申请日：2003-02-27
申请人： Hewlett Packard Co , ヒューレット・パッカード・カンパニーHewlett−Packard Company
发明人： FRICKE PETER , VAN BROCKLIN ANDREW L , ANDERSON DARYL
IPC分类号： G11C17/00 , G11C17/06 , G11C17/14 , G11C17/16 , G11C17/18 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/112 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C17/18 , G11C17/00 , G11C17/06 , G11C17/16
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory circuit in which a memory storage capacity is improved with a small occupying space and which can be inexpensively manufactured. SOLUTION: A memory device includes a memory component constituted to display a logical value corresponding to a data bit in a bit sequence and having an initial first resistance, a fault memory component constituted to display a second logical value corresponding to data bit in a bit sequence, and an additional memory component constituted to display an encoded bit in a bit sequence relating to the bit sequence with the fault memory component. The additional memory component is constituted to display an encoded bit showing whether the logical state of each data bit in the bit sequence is inverted or not. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2004031917A Memory structure 审中-公开
公开(公告)号：JP2004031917A
公开(公告)日：2004-01-29
申请号：JP2003073335
申请日：2003-03-18
申请人： Hewlett Packard Co , ヒューレット・パッカード・カンパニーHewlett−Packard Company
发明人： FRICKE PETER , KOLL ANDREW , LAZAROFF DENNIS M , VAN BROCKLIN ANDREW L
IPC分类号： G11C5/00 , G11C17/14 , H01L27/10 , H01L27/102 , H01L27/105 , H01L27/115 , H01L27/22 , H01L27/24 , H01L29/76
CPC分类号： H01L27/224 , H01L27/101 , H01L27/1021 , H01L27/115 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1226 , H01L45/1233
摘要： PROBLEM TO BE SOLVED: To provide a memory structure which is economically and has a large capacity even for various type of optical storage units like a CD-ROM, a CD-R, a CD-R/W, a DVD or a DVD-R.
SOLUTION: This memory structure includes first electrodes (835, 235, 335, 435, 535, 635 and 743), second electrodes (27, 239a, 239b, 339a, 339b, 439a, 439b, 539a, 539b, 639a, 639b, and 735), third electrodes (833, 233, 333, 341, 433, 441, 533, 633, 641 and 739), a control element (25) disposed between the first and the second electrodes, and a memory storage element (23) disposed between an edge of the second electrode and a third electrode.
COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2003308699A Method and memory structure using tunnel-junction device as control element 有权
标题翻译：使用隧道连接装置作为控制元件的方法和存储器结构
公开(公告)号：JP2003308699A
公开(公告)日：2003-10-31
申请号：JP2003083216
申请日：2003-03-25
申请人： Hewlett Packard Co , ヒューレット・パッカード・カンパニー
发明人： FRICKE PETER , VAN BROCKLIN ANDREW L , ELLENSON JAMES E
IPC分类号： G11C17/14 , G11C17/18 , H01L27/10 , H01L27/105
CPC分类号： G11C13/003 , G11C17/16 , G11C17/18 , G11C2213/76
摘要： PROBLEM TO BE SOLVED: To provide a low cost and high capacity memory structure and to provide a means for controlling the memory structure. SOLUTION: The memory structure (20) comprises a memory storage element (23) electrically coupled to a control element (25). The control element (25) is constituted of a tunnel-junction device. The memory storage element (23) also can be constituted of a tunnel-junction device. A method for fusion a tunnel- junction device of the memory storage element without fusing a tunnel-junction device of an associated control element is disclosed. The memory structure (20) is constituted of the memory storage element (23), the control element (25) comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element (930). The reference element (930) is configured as a reference for protecting the control element (25) when the state of the memory storage element (23) is selectively controlled. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供低成本和高容量存储器结构并提供用于控制存储器结构的装置。存储器结构（20）包括电耦合到控制元件（25）的存储器存储元件（23）。控制元件（25）由隧道结装置构成。存储器存储元件（23）也可以由隧道结装置构成。公开了一种用于融合存储器存储元件的隧道结器件而不熔接相关控制元件的隧道结器件的方法。存储器结构（20）由存储器存储元件（23）构成，控制元件（25）包括电耦合到存储器存储元件并被配置为控制存储器存储元件的状态的隧道结器件，以及参考元件（930）。当选择性地控制存储器存储元件（23）的状态时，参考元件（930）被配置为用于保护控制元件（25）的基准。版权所有（C）2004，JPO

4. 发明专利

JP2003338606A Intermesh memory element 有权
标题翻译： INTERMESH记忆元素
公开(公告)号：JP2003338606A
公开(公告)日：2003-11-28
申请号：JP2003107180
申请日：2003-04-11
申请人： Hewlett Packard Co , ヒューレット・パッカード・カンパニー
发明人： KOLL ANDREW , FRICKE PETER , VAN BROCKLIN ANDREW L
IPC分类号： G11C17/12 , G11C5/02 , G11C17/00 , H01L27/10
CPC分类号： G11C17/00 , G11C5/025
摘要： PROBLEM TO BE SOLVED: To provide a non-volatile memory circuit whose occupation space is small, whose memory storage capacity can be improved and which can inexpensively be manufactured. SOLUTION: An intermesh memory element (500) comprises a plurality of memory components (204) having decidable resistance values, and a plurality of electronic switches (206) which control currents flowing in the memory components and each of which gives potential to one memory component or a plurality of the memory components. The first electronic switch (206) of the intermesh memory element is electrically connected to an input (210) of the memory component, and a second electronic switch (232) is electrically connected to an output (254) of the memory component. The first electronic switch and the second electronic switch are constituted so that the potential is given to the memory components. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供占用空间小的非易失性存储器电路，其存储容量可以提高并且可以廉价地制造。解决方案：一种相互关联的存储元件（500）包括具有可消除电阻值的多个存储器组件（204）和多个电子开关（206），其控制在存储器组件中流动的电流，并且每个电子开关一个存储器组件或多个存储器组件。相互啮合的存储元件的第一电子开关（206）电连接到存储器组件的输入端（210），而第二电子开关（232）电连接到存储器组件的输出端（254）。第一电子开关和第二电子开关被构造成使得电位被赋予存储器组件。版权所有（C）2004，JPO

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