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    • 1. 发明专利
    • Semiconductor laser device
    • 半导体激光器件
    • JP2008103564A
    • 2008-05-01
    • JP2006285314
    • 2006-10-19
    • Hamamatsu Photonics Kk浜松ホトニクス株式会社
    • MIYAJIMA HIROBUMISUGA HIROBUMIKUROYANAGI KAZUNORIUCHIYAMA TAKAYUKI
    • H01S5/022
    • H01S5/4012B23K26/0608H01S5/005H01S5/02208H01S5/02248H01S5/02423H01S5/4056H01S5/4075
    • PROBLEM TO BE SOLVED: To provide a semiconductor laser device that prevents laser light outputted from a semiconductor laser module from deteriorating an active layer by returning to the semiconductor laser module while being reflected with the inner-wall face of a casing after transmitting through each optical element in the semiconductor laser device provided with a plurality of the semiconductor modules.
      SOLUTION: The semiconductor laser device is provided with at least two or more semiconductor laser modules, a collimating lens for collimating light outputted from the semiconductor laser module in the fast direction, an optical element which transmits light outputted from at least one semiconductor laser module while reflecting light outputted from at least one other semiconductor laser module in the light from the collimating lens so as to synthesize both laser light, and the casing in which the semiconductor laser modules, the collimate lens, and the optical element are arranged therein. The inner-wall face of the casing facing the semiconductor laser module via the optical element is inclined at least in the fast direction.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 解决的问题:提供一种半导体激光器件,其防止从半导体激光器模块输出的激光通过返回到半导体激光器模块而同时在发送之后与壳体的内壁面反射而使有源层劣化 通过设置有多个半导体模块的半导体激光器件中的每个光学元件。 解决方案:半导体激光器件设置有至少两个以上的半导体激光器模块,用于准直半导体激光器模块沿快速方向输出的光的准直透镜,透射从至少一个半导体输出的光的光学元件 激光模块,同时在来自准直透镜的光中反射从至少一个其它半导体激光器模块输出的光,以便合成激光,并且将半导体激光器模块,准直透镜和光学元件布置在其中的壳体 。 通过光学元件面对半导体激光器模块的壳体的内壁面至少在快速方向上倾斜。 版权所有(C)2008,JPO&INPIT
    • 2. 发明专利
    • Semiconductor laser-excited solid-state laser device
    • 半导体激光激光固体激光器件
    • JP2005285807A
    • 2005-10-13
    • JP2004092821
    • 2004-03-26
    • Hamamatsu Photonics Kk浜松ホトニクス株式会社
    • KUBOMURA HIROYUKIKASAMATSU TADASHIMATSUOKA SHINICHIMIYAJIMA HIROBUMIUCHIYAMA TAKAYUKISUGA HIROBUMITSUBAKIMOTO KOJIYOSHIDA EIJIFUJITA HISANORIFUJIMOTO YASUSHINAKATSUKA MASAHIROMIYANAGA NORIAKIIZAWA YASUKAZU
    • H01S3/094
    • PROBLEM TO BE SOLVED: To provide a semiconductor laser-excited solid-state laser device which can be uniformed in an excitation intensity distribution in a cross section perpendicular to the central axis line of a laser rod. SOLUTION: In the solid-state laser device 1, excitation light L from each LD stack 4 is absorbed by the laser rod 2 so that the intensity I(R) of the excitation light L at the center P 1 of the laser rod may be I 0 /N 0 /N, and the intensity I(2R) at a position P 2 opposite from the entrance side of the laser rod 2 may be 0 0 . Since the number of the LD stacks 4 is N(=6), the intensity of the superimposed excitation light of the excitation lights from all the LD stacks 4 is N(=6) times larger than I(R) at the center P 1 . The LD stacks 4 are located at equal intervals on the circumference of the laser rod 2 so that the width of the excitation light L which has reached the laser rod 2 may be equal to the diameter of the laser rod 2. Due to this structure, the excitation intensity distribution can be uniformed. COPYRIGHT: (C)2006,JPO&NCIPI
    • 解决的问题:提供一种能够在垂直于激光棒的中心轴线的截面中以激发强度分布均匀的半导体激光激光固态激光器件。 解决方案:在固体激光装置1中,来自每个LD堆叠4的激发光L被激光棒2吸收,使得在中心P 1处的激发光L的强度I(R) 激光棒的强度I(2R)可以是P <0 / 与激光棒2的入射侧相对的 2 可以是0 0 。 由于LD堆叠4的数量为N(= 6),所以LD堆叠4的激发光的叠加激发光的强度比中心P 1的I(R)大N(= 6)倍, SB> 1 。 LD叠层4在激光棒2的圆周上以相等的间隔设置,使得到达激光棒2的激发光L的宽度可以等于激光棒2的直径。由于这种结构, 激发强度分布可以均匀。 版权所有(C)2006,JPO&NCIPI
    • 3. 发明专利
    • Semiconductor laser system
    • 半导体激光系统
    • JP2004246158A
    • 2004-09-02
    • JP2003036800
    • 2003-02-14
    • Hamamatsu Photonics Kk浜松ホトニクス株式会社
    • SUGA HIROBUMIMIYAJIMA HIROBUMIKUROYANAGI KAZUNORIUCHIYAMA TAKAYUKITEI USHIN
    • G02B6/42G02B7/00G02B7/02G02B7/08H01S5/022
    • PROBLEM TO BE SOLVED: To provide a semiconductor laser system which facilitates position adjustment of a condenser lens section to a semiconductor laser array. SOLUTION: The semiconductor laser system 1 is devised to enable the position adjustment of the condenser lens section F with respect to the semiconductor laser array A arrayed with a plurality of laser exit points P and the condenser lens section F is fixed onto a movable platform 17 in order to facilitate the position adjustment of the condenser lens section F. Also, the fine adjustment of the movable platform 17 meeting the amount of rotational movement of a first adjusting screw 22 is made possible by utilizing the first adjusting screw 22 extending in a direction orthogonal with an optical axis L of a laser beam. The position adjustment of the condenser lens section F with respect to the semiconductor laser array A is thus facilitated. Also, the exact optical axis alignment of the condenser lens section F with respect to the semiconductor laser array A is made possible by mounting the movable platform 17 fixed with the condenser lens section F and the semiconductor laser array A on the same base B. COPYRIGHT: (C)2004,JPO&NCIPI
    • 要解决的问题:提供一种促进聚光透镜部分对半导体激光器阵列的位置调整的半导体激光系统。 解决方案:半导体激光系统1被设计为能够相对于排列有多个激光出射点P的半导体激光器阵列A进行聚光透镜部分F的位置调整,并且聚光透镜部分F固定在 可移动平台17,以便于聚光透镜部分F的位置调节。另外,通过利用第一调节螺钉22延伸的第一调节螺钉22的可移动平台17的微调能够满足第一调节螺钉22的旋转运动量 在与激光束的光轴L正交的方向上。 因此,聚光透镜部F相对于半导体激光器阵列A的位置调整变得容易。 此外,通过将固定有聚光透镜部分F的可移动平台17和半导体激光器阵列A安装在相同的基底B上,可以使聚光透镜部分F相对于半导体激光器阵列A的精确的光轴对准。 P>版权所有(C)2004,JPO&NCIPI
    • 4. 发明专利
    • Semiconductor laser module and semiconductor laser stack
    • 半导体激光模块和半导体激光堆叠
    • JP2007073550A
    • 2007-03-22
    • JP2005255551
    • 2005-09-02
    • Hamamatsu Photonics Kk浜松ホトニクス株式会社
    • SUGA HIROBUMIMIYAJIMA HIROBUMIKAGEYAMA NOBUTOUCHIYAMA TAKAYUKIOISHI SATOSHI
    • H01S5/022
    • PROBLEM TO BE SOLVED: To provide a semiconductor laser module in which pressure applied from a thermally expanded submount to a semiconductor laser element can be reduced, and to provide a semiconductor laser stack where a plurality of semiconductor laser elements are stacked. SOLUTION: The semiconductor laser module comprises a submount 3 having a surface M1 and a surface M2 provided on the side opposite to the surface M1 where a level difference S1 is provided in the surface M1, a semiconductor laser element 5 provided on the surface M2, and a submount 9 provided on the semiconductor laser element 5 wherein the semiconductor laser element 5 is provided on a surface region E1a corresponding to a part or all of the bottom in the level difference S1 of the surface M1. COPYRIGHT: (C)2007,JPO&INPIT
    • 解决的问题:提供一种半导体激光器模块,其中可以减少从热膨胀的基座施加的压力到半导体激光元件的压力,并且提供堆叠多个半导体激光器元件的半导体激光器堆叠。 解决方案:半导体激光器模块包括具有表面M1的底座3和设置在表面M1的与表面M1相对的一侧的表面M2,其中在表面M1中设置有电平差值S1,半导体激光元件5设置在 表面M2和设置在半导体激光元件5上的基座9,其中半导体激光元件5设置在与表面M1的电平差S1中的底部的一部分或全部相对应的表面区域E1a上。 版权所有(C)2007,JPO&INPIT
    • 5. 发明专利
    • Semiconductor laser device and semiconductor laser stacking device
    • 半导体激光器件和半导体激光器堆叠器件
    • JP2006086229A
    • 2006-03-30
    • JP2004267424
    • 2004-09-14
    • Hamamatsu Photonics Kk浜松ホトニクス株式会社
    • KUROYANAGI KAZUNORIMIYAJIMA HIROBUMIUCHIYAMA TAKAYUKIFUJITA TAKAHIRO
    • H01S5/024
    • PROBLEM TO BE SOLVED: To provide a semiconductor laser device and a semiconductor laser stacking device that can prevent the liquid leakage between heat sinks and the communicating waterways between the heat sinks, and has the heat sinks for cooling a semiconductor laser element efficiently.
      SOLUTION: The semiconductor laser device 1 comprises the heat sink 21 having, in the inside, a fluid channel 30 including an inlet/an outlet 32a, 31b of fluid on the outer wall surface 22a of the heat sink 21; a spacer 70 having communicating holes 71a, 71b communicating with each of the inlet/outlet 32a, 31b; sealing members 40, 41 stored in the inside of each of the communicating holes 71a, 71b; and the semiconductor laser element 80 arranged on the outer wall surface 22a.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种能够防止散热器与散热器之间的连通水道之间的液体泄漏的半导体激光装置和半导体激光堆叠装置,并且具有用于有效地冷却半导体激光元件的散热器 。 解决方案:半导体激光装置1包括散热器21,散热器21在内部具有在散热器21的外壁表面22a上包括流体的入口/出口32a,31b的流体通道30; 具有与入口32a,31b中的每一个连通的连通孔71a,71b的间隔件70; 存储在每个连通孔71a,71b的内部的密封构件40,41; 以及布置在外壁表面22a上的半导体激光元件80。 版权所有(C)2006,JPO&NCIPI
    • 6. 发明专利
    • Semiconductor laser device and method for cooling the same
    • 半导体激光器件及其冷却方法
    • JP2003324231A
    • 2003-11-14
    • JP2002126851
    • 2002-04-26
    • Hamamatsu Photonics Kk浜松ホトニクス株式会社
    • SUGA HIROBUMIKUROYANAGI KAZUNORIMIYAJIMA HIROBUMIUCHIYAMA TAKAYUKI
    • H01S5/024
    • PROBLEM TO BE SOLVED: To provide a semiconductor laser device and a method for cooling the same, in which, particularly, a free coolant path layout is achieved, an a coolant discharged from a heat sink is effectively used. SOLUTION: In a cooling method used in a semiconductor device 1 that includes a semiconductor laser array 3 in which a plurality of outgoing laser points 3a are arranged along the longitudinal direction of a front 5; and semiconductor laser units 4 stacked in a plurality of stages having heat sinks 2 that have coolant paths S therein, a gas coolant such as air or a nitrogen gas coolant flows through the coolant paths S in the heat sinks 2, and the gas coolant S is not circulated in a device different from a water-cooling type, but discharged from the heat sinks 2 to the outside. As the result of using such a method, accurate countermeasures against the leakage of the coolant as in the water-cooling type are not required, thereby a free coolant path layout is achieved. Moreover, the semiconductor laser array 3 itself is directly cooled by the coolant for the effective use of the coolant discharged from the heat sinks 2. COPYRIGHT: (C)2004,JPO
    • 要解决的问题:为了提供一种半导体激光器件及其冷却方法,特别地,其中实现了无冷却剂路径布局,有效地使用从散热器排出的冷却剂。 解决方案:在半导体器件1中使用的冷却方法中,包括半导体激光器阵列3,其中多个输出激光点3a沿着前部5的纵向排列; 以及堆叠在具有散热器2的多个级中的半导体激光器单元4,其中具有冷却剂路径S,诸如空气或氮气冷却剂的气体冷却剂流过散热器2中的冷却剂路径S,并且气体冷却剂S 不会在与水冷式不同的装置中循环,而是从散热片2排出到外部。 作为使用这种方法的结果,不需要如水冷式那样的针对冷却剂泄漏的准确对策,从而实现了冷却剂路径的自由布局。 此外,半导体激光器阵列3本身被冷却剂直接冷却,以有效地使用从散热器2排出的冷却剂。版权所有(C)2004,JPO