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1. 发明专利

JP2001145024A PHOTOSENSOR CIRCUIT 失效
公开(公告)号：JP2001145024A
公开(公告)日：2001-05-25
申请号：JP35962299
申请日：1999-11-12
申请人： HONDA MOTOR CO LTD
发明人： SHINOZUKA NORIYUKI , TAKEBE KATSUHIKO
IPC分类号： G01J1/46 , H01L27/146 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/376 , H04N5/378
摘要： PROBLEM TO BE SOLVED: To provide a photosensor circuit having a shutter function that can obtain a pixel signal with excellent reproducibility. SOLUTION: The photosensor circuit consists of a photosensor element (PD) that senses an optical signal to convert it into an electric signal, a 1st MOS transistor(TR) (Q1) to charge/discharge electric charges in a parasitic capacitance (C1) of the photosensor element, a capacitor (C2) that stores a terminal voltage of the photosensor element as a pixel signal, a 2nd MOS TR (Q2) that transfers the charge in the parasitic capacitance of the photosensor element to the capacitor, a 3rd MOS TR (Q3) that amplifies the terminal voltage of the capacitor, and a 4th MOS TR (Q4) that selectively outputs the amplified pixel signal. The photosensor circuit is configured such that the 1st an 2nd TRs are conductive for a prescribed time before the pixel signal is stored so as to charge/discharge the parasitic capacitance of the photosensor element and the capacitor and make the terminal voltage the same, and the 2nd TR is interrupted after the lapse of a prescribed storage time to open the capacitor and then the 4th TR is turned on.

2. 发明专利

JP2000091601A SOLAR BATTERY 失效
公开(公告)号：JP2000091601A
公开(公告)日：2000-03-31
申请号：JP26896298
申请日：1998-09-07
申请人： HONDA MOTOR CO LTD
发明人： INABA ATSUSHI , TAKEBE KATSUHIKO , ISHIKAWA YAMATO
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/0336
摘要： PROBLEM TO BE SOLVED: To provide a solar battery for enhancing photoelectric transfer efficiency by reducing the resistance of an electrode and loss by, Joule's heat and for easily connecting the electrode with an outside part. SOLUTION: This solar battery is provided with an insulating substrate 5, lower electrode layer 2 made of molybdenum formed on the surface of the insulating substrate 5 as materials, semiconductor photoelectric transfer layer 1 made of Cu, In, Ga, and Se or the like formed on the surface of the lower electrode layer 2 as main components, and transparent upper electrode layers 3a and 3b formed on the surface of the semiconductor photoelectric transfer layer 1. Then, this solar battery is provided with an auxiliary electrode layer 6 formed on the back face of the insulating substrate 5 and plural conductive paths formed through the substrate 5 for connecting the lower electrode layer 2 with the auxiliary electrode layer 6.

3. 发明专利

JP2000083198A OPTICAL SENSOR CIRCUIT AND IMAGE SENSOR USING THE SAME 失效
公开(公告)号：JP2000083198A
公开(公告)日：2000-03-21
申请号：JP25051698
申请日：1998-09-04
申请人： HONDA MOTOR CO LTD
发明人： SHINOZUKA NORIYUKI , KAMIYAMA TOMOYUKI , TAKEBE KATSUHIKO
IPC分类号： H01L27/146 , H01L31/10 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/3745
摘要： PROBLEM TO BE SOLVED: To provide the pixel with a large opening ratio and excellent sensitivity. SOLUTION: This optical sensor circuit is provided with a photoconductive film L1 for converting optical signals to a sensor current, a MOS transistor Q1 for converting the converted sensor current to a detection voltage provided with logarithmic characteristics in a weak inversion state, a capacitor C connected to the detection terminal of the MOS transistor and a gate voltage VG for applying a voltage for reset to the gate voltage of the MOS transistor at the time of detecting the optical signals thereby lowering impedance between a drain and a source and controlling the charging or discharging of the capacitor. The optical sensor circuit is also provided with a linear response area for detecting the detection voltage proportional to the charging current or discharging current of the capacitor C in the case that the sensor current converted by the photoconductive film L1 is equal to or less than a prescribed current and further it is provided with a logarithmic response area for detecting the detection voltage having logarithmic characteristics corresponding to the load characteristics of the MOS transistor Q1 in the case that the sensor current converted by the photoconductive film L1 is a current exceeding the prescribed level.

4. 发明专利

JPH11252465A SOLID-STATE IMAGE-PICKUP DEVICE AND DRIVE METHOD THEREFOR 失效
公开(公告)号：JPH11252465A
公开(公告)日：1999-09-17
申请号：JP5038198
申请日：1998-03-03
申请人： CITIZEN WATCH CO LTD , HONDA MOTOR CO LTD
发明人： TANAKA TOSHIAKI , TAKEBE KATSUHIKO
IPC分类号： H04N5/232 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/369 , H04N5/3745 , H04N5/378
摘要： PROBLEM TO BE SOLVED: To provide a MOS type solid-state image-pickup device, capable of high speed and accurate reading of a light quantity irradiated to a photoelectric conversion element, and to provide its drive method. SOLUTION: This solid-state image-pickup device 100 is provided with a photoelectric conversion element cell array 10 arrayed into a matrix shape. Between one of first and second signal lines 15 and 19 and a prescribed selection circuit 17 or 27 for driving the signal line, a means 30 for storing the received light quantity in plural signal lines including a received light quantity detection means for individually reading the respective received light quantity of the plural pieces of photoelectric conversion elements cells 14 (1, 1)..., 14 (m, n) connected to plural signal lines which are selected in the other signal line and a switching means for selectively transmitting the detected received light quantity individually to an output means 35 are provided.

5. 发明专利

JP2532149B2 失效
公开(公告)号：JP2532149B2
公开(公告)日：1996-09-11
申请号：JP2642090
申请日：1990-02-06
申请人： HONDA MOTOR CO LTD
发明人： TAKEBE KATSUHIKO , HYAMA SATOSHI
IPC分类号： G01L1/18 , G01D5/14 , G01D5/18 , G01L1/00 , G01L9/00 , G01P15/08 , G01P15/12 , H01L21/8234 , H01L27/088 , H01L29/78 , H01L29/84 , G01P15/09

6. 发明专利

JPH08166448A PERIPHERAL MONITOR FOR VEHICLE 失效
公开(公告)号：JPH08166448A
公开(公告)日：1996-06-25
申请号：JP30916094
申请日：1994-12-13
申请人： HONDA MOTOR CO LTD
发明人： HAYASHIKURA ARITOSHI , KATOU SHIGETAKA , TAKEBE KATSUHIKO , OKADA YASUSHI
IPC分类号： G01S13/10 , G01S13/32 , G01S13/36 , G01S13/60 , G01S13/87 , G01S13/89 , G01S13/93
摘要： PURPOSE: To obtain an apparatus for monitoring the periphery of a vehicle and assisting an operator for recognizing an obstacle and making a decision. CONSTITUTION: A plurality of radar means 3 are disposed around a vehicle so that they detect an obstacle in different directions. A processing means 4 sequentially switches the radar means 3 performing the detecting operation based on a transmission permit signal 4a and detects an obstacle, along with the distance thereto, in each direction based on a data 4a related to the phase difference (time difference) between a transmission signal delivered from the radar means 3 and a receiving signal. Peripheral conditions thus detected are displayed on the screen of an image display 51. Furthermore, a message for calling attention is delivered from a speech synthesizer 52.

7. 发明专利

JPH0886698A SURFACE STRESS SENSOR 失效
公开(公告)号：JPH0886698A
公开(公告)日：1996-04-02
申请号：JP22324494
申请日：1994-09-19
申请人： HONDA MOTOR CO LTD
发明人： YAMAKAWA HIROSHI , TAKEBE KATSUHIKO , SASAHARA JUN
IPC分类号： G01L1/00 , G01L1/12 , G01N3/32 , G01N27/72
摘要： PURPOSE: To obtain a surface stress sensor for detecting stress on the surface of a plane structural member accurately over a wide range. CONSTITUTION: The surface stress sensor comprises a plurality of amorphous wires 2 embedded in a plane structural member 4 while being arranged in open loop parallel with each other, and coils 3 wound around the amorphous wires 2. The coils 3 are selected sequentially and excited with a high frequency current and the power induced in other coil 3 by the leakage flux of an excited coil 3 is measured thus detecting stress on the surface of the plane structural member 4.

8. 发明专利

JPH0536735B2 失效
公开(公告)号：JPH0536735B2
公开(公告)日：1993-05-31
申请号：JP16352782
申请日：1982-09-20
申请人： HONDA MOTOR CO LTD
发明人： MURAO EIJI , TAKEBE KATSUHIKO , OKADA YASUSHI
IPC分类号： G01C21/00 , G01C21/20 , G01C21/26 , G01S5/04 , G05D1/02 , G08G1/133

9. 发明专利

JPH02194343A SEMICONDUCTOR STRESS SENSOR 失效
公开(公告)号：JPH02194343A
公开(公告)日：1990-07-31
申请号：JP1458189
申请日：1989-01-24
申请人： HONDA MOTOR CO LTD
发明人： TAKEBE KATSUHIKO , HIYAMA SATOSHI
IPC分类号： G01L1/00 , G01L9/00 , G01P15/08 , H01L29/84
摘要： PURPOSE:To increase the detection output by impressing a specific bias to the gate of an FET, impressing a constant voltage between the source and drain, and outputting a detection signal corresponding to stress according to variation of the drain current. CONSTITUTION:The potential difference between the inverted input terminal (-) and uninverted input terminal (+) of an amplifier 11 is considered to be 0. Then, when the potential difference between a power source VDD and the earth is denoted as V1, an invariably constant voltage V1 is impressed between the source and drain of a stress detection FET 4. Therefore, V3=-R(R1/Rv) V1=-ID.R1, where V3 is voltage level of the output signal OUT, Rv is the source-drain resistance value of the FET 4 and ID is the drain current. Thus, the constant voltage is impressed between the source and drain of the FET 4 and the variation of the current ID when stress is applied is detected by current-voltage conversion and outputted. Consequently, the large detection output which is affected by neither short-channel effect nor environmental temperature is obtained as a voltage signal.

10. 发明专利

JPH0267966A SEMICONDUCTOR SENSOR 失效
公开(公告)号：JPH0267966A
公开(公告)日：1990-03-07
申请号：JP21986288
申请日：1988-09-02
申请人： HONDA MOTOR CO LTD
发明人： TAKEBE KATSUHIKO , DOI MIZUHO , TAKEHARA HIROYASU
IPC分类号： G01P15/12
摘要： PURPOSE:To detect acceleration, contact pressure, atmospheric pressure and mechanical vibration at high sensitivity with a simple structure, by providing a compound semiconductor FET which is formed at a part where a variable member is deformed. CONSTITUTION:In an acceleration detecting sensor, a crystal growing layer 2 comprising, e.g. GaAs, is epitaxially grown on a semiconductor substrate 1 comprising, e.g. Si. A part A of the substrate 1 is removed by etching. The compressing side in the Figure is a cantilever 3 as a variable member. A Schottky gate (MES) FET is formed at the layer 2 at the end part. Thus a stress detecting FET 4 is formed. A signal processing circuit 5 which performs amplification and the like for the detected signal is formed on the layer 2 at the supporting side of the cantilever 3. When acceleration is applied in the direction of an arrow G, the part A of the layer 2 is bent. Therefore the threshold value of the FET 4 is changed, and the acceleration is detected.

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