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    • 2. 发明专利
    • Electrophotographic receptor
    • 电子摄影受体
    • JPS58182639A
    • 1983-10-25
    • JP6696382
    • 1982-04-20
    • Hitachi LtdToyo Ink Mfg Co Ltd
    • TSUNODA ATSUSHIOKA HIROYUKISUZUKI SHIGEOARAYA KOUTAROUMORI YASUKIMORISHITA YASUSADATAKANO SHIGEMASASAWADA MANABUKUMANO ISAO
    • C09B23/06C09B23/14C09B47/04C09B47/073C09B47/10C09B47/16C09B47/26C09B47/30C09B67/12C09B67/22C09B67/50G03G5/06
    • C09B47/30C09B23/06C09B23/145C09B47/073C09B47/10C09B47/16C09B47/26C09B67/0016C09B67/0026C09B67/0035G03G5/0696
    • PURPOSE: To obtain the entitled photoreceptor high in sensitivity to long wavelength light, by forming a layer consisting of a charge generating substance and a charge transfer substance contg. a γ-type and/or a η-type metal-free phthalocyanine on a conductive substrate.
      CONSTITUTION: A mixture of (A) 100pts.wt. metal-free phthalocyanine, and (B) 0W50pts.wt. metal-free phthalocyanine having substituents on benzene rings, phthalocyanine nitrogen compd. having same structure, and benzene rings optionally substd., and/or metallophthalocyanine is dispersed into a liquid dispersion medium, and their crystalline structures are converted by applying mechanical shearing force while heating them below the decomposition temp. of the component (A) or said mixture, to convert the crystalline structures and to obtain a γ-type or η-type metal-free phthalocyanine (C). A 0.1W20μm thick charge generating layer contg. the component (C), and a 5W100μm thick charge transfer layer contg. a compd. having formula I (X is a hetero ring of one of formulae IIWV; Z is O or S; n is 0,1, or 2; and R
      1 , R
      2 ) are formed on a conductive substrate.
      COPYRIGHT: (C)1983,JPO&Japio
    • 目的:通过形成由电荷产生物质和电荷转移物质组成的层,以获得对长波长光的敏感度高的标签感光体。 导电基底上的γ型和/或eta型无金属酞菁。 构成:(A)100pts.wt。 无金属酞菁,(B)0-50pts.wt。 在苯环上具有取代基的无金属酞菁,酞菁氮化合物 具有相同的结构,并且苯环任选被分解,和/或金属酞菁分散到液体分散介质中,并且通过施加机械剪切力同时将它们的结晶结构加热到分解温度以下来转化。 的组分(A)或所述混合物,以转化晶体结构并获得γ型或eta型无金属酞菁(C)。 0.1-20μm厚的电荷产生层, 组分(C)和5-100μm厚的电荷转移层, 一个compd 具有式I(X是式II-V之一的杂环; Z是O或S; n是0,1或2;以及R 1,R 2)形成在导电基底上。