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1. 发明专利

JPH0481823A FILTER COMBINED WITH SURFACE ACOUSTIC WAVE RESONATOR 失效
公开(公告)号：JPH0481823A
公开(公告)日：1992-03-16
申请号：JP19496390
申请日：1990-07-25
申请人： HITACHI LTD , HITACHI VIDEO ENG
发明人： SHIBAGAKI NOBUHIKO , HIKITA MITSUTAKA , TABUCHI TOYOJI , ISOBE ATSUSHI , KIKUKAWA ATSUSHI , SUZUKI KAZUTOSHI , AKAGI TAKATOSHI
IPC分类号： H03H9/145 , G02F1/11 , G02F1/23 , H03H9/25 , H03H9/64
摘要： PURPOSE:To provide the filter of a low loss and high attenuation rate by most adequately setting the relative various size relation of the electrical impedances of the surface acoustic wave resonators of a series arm and parallel arm. CONSTITUTION:The total sum of the reciprocals of the product of the electrode pair number and the electrode finger crossing width of the surface acoustic wave resonator connected to the series arm with respect to a signal route, i.e. the electrical impedance of the series arm is set at >=2.0 times and

2. 发明专利

JPH04132409A SURFACE ACOUSTIC WAVE RESONATOR 失效
公开(公告)号：JPH04132409A
公开(公告)日：1992-05-06
申请号：JP25197590
申请日：1990-09-25
申请人： HITACHI LTD , HITACHI VIDEO ENG
发明人： TABUCHI TOYOJI , HIKITA MITSUTAKA , SHIBAGAKI NOBUHIKO , KIKUKAWA ATSUSHI , AKAGI TAKATOSHI , SUZUKI KAZUTOSHI
IPC分类号： H03H9/145 , H03H9/64
摘要： PURPOSE:To suppress the degradation in the characteristic between attenuation poles by forming a multi-pair transducer of one-aperture surface acoustic wave resonator with the combination of >= two regions with different electrode pitches. CONSTITUTION:This surface acoustic wave transducer consists of plural regions and each region is arranged with plural interdigital electrode pairs continuously at the same pitch and pitches P1, P2 of the interdigital electrode pairs of the adjacent regions are made different. That is, the transducer consists of regions (5-1)-(5-2) in which the electrode finger pitch of the transducer is P1 and regions (6-1)-(6-3) in which the electrode finger pitch of the transducer is P2. In this case, the resonance characteristic of the one-aperture surface acoustic wave resonator in which the multi-pair transducer consists of plural regions whose electrode finger pitch differs has plural attenuation poles corresponding to the plural electrode pitches. Thus, since the resonator composite filter composed of plural one-aperture surface acoustic wave resonators has attenuation poles more then the total number of the one-aperture surface acoustic wave resonators, the frequency difference between the attenuation poles is set small and the degradation in the characteristic between the attenuation poles is suppressed.

3. 发明专利

JPH0472950A RADIO TELEPHONE SET 失效
公开(公告)号：JPH0472950A
公开(公告)日：1992-03-06
申请号：JP18397290
申请日：1990-07-13
申请人： HITACHI LTD , HITACHI VIDEO ENG
发明人： KUROSAWA KAZUHITO , HIKITA MITSUTAKA , TABUCHI TOYOJI , SHIBAGAKI NOBUHIKO , SUZUKI KAZUTOSHI , OTSUKA TOSHIHIRO , AKAGI TAKATOSHI
IPC分类号： H04M1/02 , H01Q1/44
摘要： PURPOSE:To make the radio telephone set main body small to the utmost by adopting the structure for a microphone support member so as to be drawn out of a main body of the radio telephone set and using the drawn-out part as an antenna. CONSTITUTION:An antenna 6 is suspended and projected from a bottom face 1a and a microphone 5 is fitted to the tip of the antenna 6. In the case of talking, a speaker 2 built in the main body 1 is in contact with an ear and the microphone 5 at the tip of the antenna 6 is placed close to a mouth. Thus, even when the size of the main body 1 is made small, a sufficient distance is ensured between the speaker 2 and the microphone 5 and talking quality is kept constant. Moreover, since the support member of the microphone 5 is used as an antenna, it is not required to provide the antenna separately from the support member of the microphone.

4. 发明专利

JPH0290805A HIGH FREQUENCY CIRCUIT DEVICE 失效
公开(公告)号：JPH0290805A
公开(公告)日：1990-03-30
申请号：JP24112888
申请日：1988-09-28
申请人： HITACHI LTD , HITACHI ELECTRONICS , HITACHI COMMUNICATION SYSTEM
发明人： SHIBAGAKI NOBUHIKO , HIKITA MITSUTAKA , TABUCHI TOYOJI , IMURA AKIRA , KINOSHITA TSUNEO
IPC分类号： H03H9/25 , H03H3/08 , H05K1/02 , H05K3/34
摘要： PURPOSE:To attain flat mounting by fixing a surface acaostic wave element, keeping a dielectric layer surface generating an input matching circuit and an output matching circuit, and that generating an input electrode and an output electrode apart. CONSTITUTION:The package 10 of a TO can type, in which the elastic surface wave element 1 is accommodated, is mounted on a dielectric substrate 20. Input/ output pins 5 and 6 are inserted into through holes 21 and 22 provided on the dielectric substrate 20, and they are electrically connected with the input electrode 23 and the output electrode 24 provided on the back of the small-sized dielectric substrate 20. The input matching circuit 25 and the output matching circuit 26 are simultaneously generated on the surface of the small-sized dielectric substrate 20, and the matching circuits 25 and 26 are electrically connected with the input electrode 23 and the output electrode 24 by the through holes 27 and 28. Thus, mounting is attained on a single plane.

5. 发明专利

JP2004297633A Antenna duplexer and radio terminal using it 有权
公开(公告)号：JP2004297633A
公开(公告)日：2004-10-21
申请号：JP2003089540
申请日：2003-03-28
申请人： Hitachi Ltd , Hitachi Media Electoronics Co Ltd , 株式会社日立メディアエレクトロニクス , 株式会社日立製作所
发明人： HIKITA MITSUTAKA , SHIBAGAKI NOBUHIKO , MATSUDA SHIGEKI , MATSUURA NAOKI , YOKOYAMA KAZUYUKI
IPC分类号： H01P1/15 , H04B1/44
摘要： PROBLEM TO BE SOLVED: To provide a very effective technology for a GSM (global system for mobile communications) radio terminal which realizes multiband compatibility with a small circuit configuration and high performance, and whose future demand will further increase.
SOLUTION: This multiband switching antenna duplexer is applied to a mobile telephone used for a TDMA (time division multiple access) system such as a GSM, and a single antenna is shared by signals of four different frequency bands (GSM850, EGSM (extended GSM), DCS (digital communication system), and PCS (personal communication service)). By combining receiving filters 24, 27, 44, and 47 with switching devices of diodes 9, 10, 11, and 12; the antenna duplexer can switch bands with very high performance by the minimum number of switching devices. By this antennal duplexer's circuit, not only a multiband switching antenna duplexer is miniaturized, but also a radio terminal itself is improved in performance and miniaturized.
COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JPH11154804A HIGH FREQUENCY CIRCUIT DEVICE 失效
公开(公告)号：JPH11154804A
公开(公告)日：1999-06-08
申请号：JP31931497
申请日：1997-11-20
申请人： HITACHI LTD , HITACHI MEDIA ELECTRON KK
发明人： SHIBAGAKI NOBUHIKO , HIKITA MITSUTAKA , SAKIYAMA KAZUYUKI
IPC分类号： H01P1/213 , H01P1/18 , H03H9/145 , H03H9/70 , H03H9/72 , H04B1/40 , H04B1/44 , H04B1/56 , H04Q7/32
摘要： PROBLEM TO BE SOLVED: To make a high frequency circuit small in size and low in cost by introducing a phase inverting circuit to the high frequency circuit. SOLUTION: In this high frequency circuit connected to a transmission reception common use antenna, a transmission circuit (Tx) and a reception circuit (Rx) and for leading a reception signal from the antenna to the reception circuit only and leading a transmission signal from the transmission circuit to the antenna only, surface acoustic wave filters 1, 4 where an absolute value of a reflection coefficient at a transmission signal frequency band is 0.8 or over and phase inverting circuits 2, 5 are placed between the antenna and the reception circuit respectively, in such a way that the phase inverting circuits connect directly to the antenna, and high frequency switches 3, 6 are placed between the antenna and the transmission circuit.

7. 发明专利

JPH11150438A BAND REJECTION TYPE FILTER USING IDT TYPE SURFACE ACOUSTIC WAVE RESONATOR 失效
公开(公告)号：JPH11150438A
公开(公告)日：1999-06-02
申请号：JP31479197
申请日：1997-11-17
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , HIKITA MITSUTAKA , SHIBAGAKI NOBUHIKO , ASAI KENGO
IPC分类号： H03H9/145 , H03H9/64
摘要： PROBLEM TO BE SOLVED: To obtain a band rejection type filter with high attenuation at a lock band. SOLUTION: Plural IDT surface acoustic wave resonators, each using a θYX-LT piezoelectric substrate 5 and Al electrodes 1A, 1B are connected in series and number of pairs of the resonators, the electrode period, the film thickness and a value θ are selected to be desired values. Thus, the propagation loss of a surface acoustic wave in the vicinity of an anti-resonance frequency o the resonator is negligibly small. As a result, the attenuation is improved by 4 dB or more compared to that of a conventional band rejection filter employing a 36 XY-LT piezoelectric substrate.

8. 发明专利

JPH11112467A RF SIGNAL PROCESSOR FOR CDMA COMMUNICATION USING SAW 失效
公开(公告)号：JPH11112467A
公开(公告)日：1999-04-23
申请号：JP27079897
申请日：1997-10-03
申请人： HITACHI LTD
发明人： HIKITA MITSUTAKA , TAKUBO CHISAKI , ASAI KENGO , SHIBAGAKI NOBUHIKO , OKAZAKI KATSUNORI
IPC分类号： H03H9/42 , H03H9/72 , H04B1/707 , H04B1/708 , H04B1/7093 , H04J13/00
摘要： PROBLEM TO BE SOLVED: To demodulate the spread spectrum signal of high efficiency without requiring a generation circuit, or the like of a replica signal by inputting two high frequency signals to two surface acoustic wave(SAW) delay element, mixing respective output signal by a mixer and taking out the output signal of the frequency of difference. SOLUTION: Concerning a first delay element, a transducer 15 for SAW excitation and transducers 16-1 to 16-N for reception are formed at a piezoelectric substrate 1. Concerning a second delay element, a transducer 18 for SAW excitation and transducers 19-1 to 19-N for reception are formed at a piezoelectric substrate 1. The spread spectrum signal of a frequency fRF is inputted from a first input terminals 14. The nonmodulation continuous waves of a frequency fLO is inputted from a second input terminals 17. Each output signal from each delay element is mixed by mixers 20-1 to 20-N to obtain the output signals O(1) to O(N) of the frequency |fRF-fLO|of difference.

9. 发明专利

JPH10145172A SURFACE ACOUSTIC WAVE RESONATOR COMPOSITE-TYPE FILTER 失效
公开(公告)号：JPH10145172A
公开(公告)日：1998-05-29
申请号：JP30442496
申请日：1996-11-15
申请人： HITACHI LTD
发明人： SHIBAGAKI NOBUHIKO , HIKITA MITSUTAKA , SAKIYAMA KAZUYUKI
IPC分类号： H03H9/145 , H03H9/25 , H03H9/64
摘要： PROBLEM TO BE SOLVED: To manufacture the filter with a sharp and wide band, which is demanded by a vehicle and a portable telephone set by using the change in resonance characteristics, generated by varying the film thickness of electrode thin films in plural surface acoustic wave resonators formed on the same piezoelectric substrate. SOLUTION: Four surface acoustic wave resonators, constituted of electrodes 3-8 and one gap capacitor constituted of electrodes 9 and 19, are provided on a piezoelectric board 1, that can transmit a surface acoustic wave so as to form the composite filter. The electrode 4 is electrically connected to an electrode pattern 10 by bonding wire 11, and matching inductances 23-26 and sound- absorbing materials 31-36 are provided. In such a case, the electrode film thickness h1 and h2 of the electrodes 3-5 and that of the electrodes 6-8 on the board 1 are set to be 900Å and 2700Å, and a filter characteristics is composited by using the difference of the resonance characteristics, which are generated by the difference in film thickness. Thus, a filter of the sharp and wide frequency characteristics, which is requested in digital movable communication, can be obtained.

10. 发明专利

JPH0758586A HIGH FREQUENCY CIRCUIT DEVICE 失效
公开(公告)号：JPH0758586A
公开(公告)日：1995-03-03
申请号：JP20491693
申请日：1993-08-19
申请人： HITACHI LTD
发明人： SHIBAGAKI NOBUHIKO , HIKITA MITSUTAKA , KUSANO TADASHIROU
IPC分类号： H03H9/25 , H03H9/64
摘要： PURPOSE:To reduce a chip area of an active element at low cost the as a whole by integrating a high frequency filter element and the active element. CONSTITUTION:A piezoelectric substrate 17 is packaged in a package 16 of metal or ceramic, and an inductance to match the impedance of an FET with external impedance, surface acoustic resonators 9, 10 which comprise a high frequency filter, and a gap capacitance 11 which comprises the high frequency filter are formed on the piezoelectric substrate 17. Furthermore, a semiconductor 18 is packaged at a non-pattern part on the piezoelectric substrate 17 i.e., an area where a surface acoustic wave is excited and propagated and a part other than an electrode pad, and a capacitance 4 to match the impedance of the FET with the external impedance, resistors 6, 7 which comprise the bias circuit of the FET, and capacitance 8 which forms the bias circuit of the FET are formed on the semiconductor substrate 18.

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