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1. 发明专利

JPH03263162A DATA PROCESSOR 失效
公开(公告)号：JPH03263162A
公开(公告)日：1991-11-22
申请号：JP6102790
申请日：1990-03-14
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： OSUGA HIROSHI , SAWASE TERUMI , AKAO YASUSHI , KONO TATSUHIKO
IPC分类号： G06F15/16
摘要： PURPOSE:To improve the processing capacity of the whole system by executing a data transfer to a timer by a sub-processor operated as DMAC by the micro- instruction control, and also, reforming the micro-instruction control. CONSTITUTION:The micro-instruction control is executed so that a second processor (sub-processor) 131 executes a DMAC (Direct Memory Access) function. The sub-processor 131 receives a data transfer request signal from a data processor 114, and transfers data on a data memory 137 to a timer 130 without allowing it to pass through a first processor (CPU) 112. Also, the micro- instruction control is reformed so that the sub-processor 131 can execute an arithmetic processing of data to be sent to the data processor 114, executed by the CPU 112. In such a way, the data transfer is executed at a high speed, and the system performance can be improved.

2. 发明专利

JPS6028098A MEMORY READING CIRCUIT 失效
公开(公告)号：JPS6028098A
公开(公告)日：1985-02-13
申请号：JP13442783
申请日：1983-07-25
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： NAKAMURA HIDEO , MASUMURA SHIGEKI , SAWASE TERUMI
IPC分类号： G11C16/06 , G11C17/00
摘要： PURPOSE:To read a memory at a high speed with a low detecting current by using the drain voltage of a memory element to control the gate voltage of a switching MOSFET. CONSTITUTION:When a memory element 11 is kept on, the drain current of a drain current cut-off MOSFET21 is approximately equal to the ON current of a current detecting MOSFET25 and set at 1/3-1/5 ON current of the element 11. Then the FET21 is cut in response to the reduction of the outputs of inverters 23 and 24. The FET21 has virtually no subthreshold period and performs a high- speed switching performance.

3. 发明专利

JPS6086859A NONVOLATILE MEMORY DEVICE 失效
公开(公告)号：JPS6086859A
公开(公告)日：1985-05-16
申请号：JP19423683
申请日：1983-10-19
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： NAKAMURA HIDEO , SAWASE TERUMI , MASUMURA SHIGEKI
IPC分类号： H01L27/112 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L29/788 , H01L29/792
摘要： PURPOSE:To prevent the deterioration in characteristics due to re-writing of data by a method wherein the re-writing operation of the non-selective memory element of the memory matrix, to be constituted by a nonvolatile memory element, is prevented. CONSTITUTION:One end of a memory element 111-1n8, connected to the switches which are not turned to ON state simultaneously, is grounded through the intermediary of a normally-ON type MOS transistors (Tr) 41 and 42. When the element 111 is in a write-in state, a write-in current runs into the element 111, and a voltage is generated at both ends of the Tr111. If the drain voltage DELTAV of the Tr41, when a writing-in process is performed, is brought to DELTAV>DELTAVG for the voltage DELTAVG when a word wire is in a non-selective state, the gate and source voltage of an element 121-1n1 is turned to VGS

4. 发明专利

JP2503968B2 失效
公开(公告)号：JP2503968B2
公开(公告)日：1996-06-05
申请号：JP10696786
申请日：1986-05-10
申请人： HITACHI LTD
发明人： SAWASE TERUMI , NAKAMURA HIDEO , HAGIWARA YOSHIMUNE , KIHARA TOSHIMASA , MATSUBARA KYOSHI , YAMAURA TADASHI
IPC分类号： G11C17/00 , G06F12/16 , G11C16/02 , G11C16/06

5. 发明专利

JPH0283676A SEMICONDUCTOR INTEGRATED CIRCUIT FOR DATA PROCESSING 失效
公开(公告)号：JPH0283676A
公开(公告)日：1990-03-23
申请号：JP23591988
申请日：1988-09-20
申请人： HITACHI LTD
发明人： AKAO YASUSHI , BABA SHIRO , SAWASE TERUMI , HAGIWARA YOSHIMUNE
IPC分类号： G11C17/00 , G06F15/78 , G11C16/02 , G11C16/06
摘要： PURPOSE:To easily respond to the change of operating specification and a function by attaching the operating specification which sets the loadable state of the nonvolatile storage element of a logic function block from the outside by a writer for an electrically loadable nonvolatile semiconductor memory device. CONSTITUTION:A single chip microcomputer 1 is constituted of a processor 5 consisting of CPU 2 as a logical operation control block, a RAM 3, and a ROM 4, a programmable logic array 6, and an input/output port 7 on a semiconductor substrate, and respective block is connected with a common bus 8. The microcomputer is provided with the operating function which sets the loadable state of the nonvolatile storage element of the logic function block or a nonvolatile memory block from the outside by the writer such as a universal EPROM writer. Thereby, it is possible to dispense with the use of a specific dedicated writer at the time of setting or changing the function of the operating specification for a semiconductor integrated circuit for processing.

6. 发明专利

JPS62214595A NONVOLATILE MEMORY DEVICE 失效
公开(公告)号：JPS62214595A
公开(公告)日：1987-09-21
申请号：JP5777686
申请日：1986-03-15
申请人： HITACHI LTD
发明人： SAWASE TERUMI , NAKAMURA HIDEO , HAGIWARA YOSHIMUNE
IPC分类号： G06F12/16 , G11C16/02 , G11C17/00
摘要： PURPOSE:To prevent information destruction by detecting and recording a power voltage drop, interrupting the erasure of a nonvolatile storage element to the 1st group and applying write drive together with the 2nd group storing the rewritten information at voltage drop. CONSTITUTION:A backup EEPROM 16 and a nonvolatile flag 17 are provided newly to a nonvolatile storage device. If a power voltage drop takes place during erasure or write, both a selection word and a non-selection word in a selection page 23 loose correct information. In order to prevent the loss of information, the power voltage VCC is checked 37 always during erasure, and when the voltage drops, it is informed to the circuit 26 to apply backup control 26, the fact is recorded in the nonvolatile flag 17 and proper processing is applied at the recovery. In the circuit 26, a logic circuit comprising a frequency divider and an AND gate forms the operation timing at normal state and at reduction, the operation timing at voltage drop is formed and the erasure is intermitted at the detection of drop, the information is written from a column latch 18, the information to be written is stored in the EEPROM 16 and the normal value of the non-selection word is stored in the selection page 23 to prevent the destruction of both information.

7. 发明专利

JPS61280098A NON-VOLATILE MEMORY DEVICE 失效
公开(公告)号：JPS61280098A
公开(公告)日：1986-12-10
申请号：JP12045285
申请日：1985-06-05
申请人： HITACHI LTD
发明人： NAKAMURA HIDEO , SAWASE TERUMI
IPC分类号： G11C17/00 , G11C16/02
摘要： PURPOSE:To attain a non-volatile memory possessing functions of ROM(E PROM) electrically rewritable and of non-volatile RAM by constituting a non- volatile RAM to be made the backup memory of a RAM in a part of a rewritable non-volatile element string. CONSTITUTION:When a state signal 84 is in state '1', a register 3 is selected through a gate 71 for a word selecting signal 821 obtained by decoding an address input 82. Also, write-delete voltage control circuit 4 is prohibited from generating a write-delete voltage. Consequently, this device operates as a memory device the area 11 of which works as a read-only memory and the area 3 as a RAM. When the state signal 84 is in state '0', the non-volatile memory element string 12 is selected for the word selecting signal 821, and the write- delete actuation is made ready for the circuit 4. Consequently, the area 11 and the string 12 of this device become a non-volatile storage device electrically rewritable, and the register 3 operates as a column latch.

8. 发明专利

JPS6151360B2 失效
公开(公告)号：JPS6151360B2
公开(公告)日：1986-11-08
申请号：JP18301583
申请日：1983-10-03
申请人： HITACHI LTD
发明人： TAKAI ATSUSHI , KIDA JUZO , HAGIWARA YOSHIMUNE , SAWASE TERUMI , HAGIWARA TAKAAKI
IPC分类号： G11C16/02 , G11C17/00

9. 发明专利

JPS61249156A SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPS61249156A
公开(公告)日：1986-11-06
申请号：JP9026885
申请日：1985-04-26
申请人： HITACHI LTD
发明人： NAKAMURA HIDEO , SAWASE TERUMI
IPC分类号： G11C17/00 , G06F12/14 , G06F21/02 , G11C16/02 , G11C16/04
摘要： PURPOSE:To realize various types of protective functions of the memory by a small quantity of units, to set the conditions to prevent the rewriting by providing the memory element for protective information, the temporary memory register of protective information and the address decision circuit, etc. CONSTITUTION:When a chip selecting signal 43 and an address 41 are given, the contents of a memory element 151 for the data and a memory element 152 for protective information are read by respective sense amplifiers 341 and 342. The output of the amplifier 342 is set to a register 37 to store temporarily the protective information, and when the output 47 is '1', the data are read onto a data bus 42. When the output 47 of the protective information is '0', a driver 351 is controlled, the output is prohibited and the data are not sent to the bus 42. By adding the address decision circuit, the writing preventing data latch circuit, and the deleting preventing data latch circuit, the conditions to prevent the rewriting can be set. Namely, various types of the protective functions of the memory can be realized by a small quantity of the units and the conditions to prevent the rewriting can be set.

10. 发明专利

JPS58209155A SEMICONDUCTOR MEMORY STORAGE 失效
公开(公告)号：JPS58209155A
公开(公告)日：1983-12-06
申请号：JP9124082
申请日：1982-05-31
申请人： HITACHI LTD
发明人： NAKAMURA HIDEO , SAWASE TERUMI
IPC分类号： G11C17/00 , G11C16/04 , H01L21/8246 , H01L27/112
摘要： PURPOSE:To constitute a memory cell by the minimum value of the size of processing by dividing the thickness of gate oxide films into several kinds, making the current drive capability of the memory cell differ according to the difference of the oxide films and detecting the differences between the current values. CONSTITUTION:The FET is an enhancement type one, and the memory cells 211-214 are constituted. The thickness T211-T213 of the gate oxide films of the cells 211-213 is each made differ. Consequently, the quantities of currents of the MOS transistors can be changed by varying the thickness of the oxide films. When the oxide films are thick, threshold voltage increases, and the quantities of currents flowing through the MOS transistors decrease. Multi-valued informations can be detected by detecting the differences between the current values. According to such constitution, the degree of integration of the memory can be improved because the minimum size of processing of a semiconductor can be used.

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