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1. 发明专利

JPS5887932A COMMUNICATION SYSTEM FOR SPATIAL BEAM 失效
公开(公告)号：JPS5887932A
公开(公告)日：1983-05-25
申请号：JP18535281
申请日：1981-11-20
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： TOZAWA MASATO , TAKAHASHI TAKEO
IPC分类号： H04B10/00 , H04B10/11 , H04B10/112
摘要： PURPOSE:To make the positioning of a receiver easy, by using infrared ray for signal transmission and using guide light as visual light for positioning for reception side. CONSTITUTION:A transmission signal from an infrared ray diode 2 is transmitted as parallel lumonous flux 4 via a concave mirror 3 from a transmission side 1 to a reception side 5. A visual light diode 9 provided at a position shifted by (e) from the center of the luminous flux 4 transmits a visual light 8 to the reception side in parallel with the luminous flux 4. The center of the spot light of the visual light 8 is obtained at the reception side 5, the amount of eccentricity (e) is actually measured and the position of a convex mirror 6 on a fitting stand 10 is determined so that the center of the luminous flux 4 becomes the center of the convex mirror 6 as an antenna. Thus, the transmission signal with the luminous flux 4 can be converged into a photodetector 7.

2. 发明专利

JPS57177587A LASER DIODE 失效
公开(公告)号：JPS57177587A
公开(公告)日：1982-11-01
申请号：JP6237381
申请日：1981-04-27
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： TAKAHASHI TAKEO , ISHII AKIRA , TOZAWA MASATO , SHIMIZU SHIYUUICHI , SASAYAMA ATSUSHI
IPC分类号： H01L33/48 , H01S5/00 , H01S5/022
摘要： PURPOSE:To stabilize a far field pattern of laser light so that the reflected light through a sensor does not travel into a transparent window, by arranging the sensor in slant when a stem and photosensor fixed with a laser diode chip is contained in a package material having a transparent window. CONSTITUTION:A stem 3 is erected on a flange 2 constituted of metal with good thermal conductivity with a lead 11 projected outside the device, and a laser diode chip 5 is fixed on the side surface on the upper end thereof via a buffer plate 4. Next, the lead 11 passed through the flange 2 is provided on the chip 5 side in the same way. When the photosensor 7 is arranged on the flange 2 being positioned between the lead and chip 5, the following process is taken: a slant surface 13 is provided on the surface of the flange 2 to fix the sensor 7 thereon so that the reflected light 12 by laser light 6 radiating downward from the chip 5 does not invade into the transparent window 10 on the upper end of a cap 8 which is constituted of glass plate 9.

3. 发明专利

JPS57177588A LASER DIODE 失效
公开(公告)号：JPS57177588A
公开(公告)日：1982-11-01
申请号：JP6237481
申请日：1981-04-27
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： TAKAHASHI TAKEO , TOZAWA MASATO
IPC分类号： H01S5/00 , H01L31/12
摘要： PURPOSE:To prevent the incidence of the reflected light from a sensor into a transparent window for the stabilization of radiated laser light, by providing an interception plate on the side surface of a chip surrounded thereby when containing a stem and photosensor fixed with a laser diode chip in a package material having a transparent window. CONSTITUTION:The stem 3 is erected on a flange 2 constituted of metal with good thermal conductivity with a lead 11 projecte outside the device fixing the laser diode chip 5 on the upper side surface thereof via a submount plate 4. Next, the lead 11 passed through the flange 2 is provided on the side of the chip 5 in the same way. The following process is taken when arranging the photosensor 7 positioned therebetween and the chip 5 on the flange 2: an opaque interception plate 13 along the side surface of the chip 5 is streatched across over the upper end of the stem 4 including the chip 5 to be fixed on the inside wall of a metallic cap 8 by an adhesive 14.

4. 发明专利

JPS58111390A LASER DIODE WITH LIGHT-RECEIVING ELEMENT 失效
公开(公告)号：JPS58111390A
公开(公告)日：1983-07-02
申请号：JP20944881
申请日：1981-12-25
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： TOZAWA MASATO , TAKAHASHI TAKEO , TAKEMURA KANEO
IPC分类号： H01S5/00 , H01S5/022 , H01S5/042
摘要： PURPOSE:To design a circuit easily while accurately detecting the temperature of a flange by forming each electrode of the element as independent external electrodes. CONSTITUTION:Two electrodes of a laser diode element 4 and two electrodes of the light-receiving element 6 are extracted as independent external terminals by using leads 28-30 and a package 12. The light-receiving element 6 is formed in structure in which an intrinsic region 22 and a P conduction type region 23 are shaped into an N conduction type island region 21 formed at the center of the upper surface of a P conduction type substrate 20 in succession. Accordingly, since a P-N junction 24 for insulating the light-receiving element 6 functions as an insulator during operation, the electrodes of each element have the independent external terminals, thus resulting in easy incorporation into circuits of various kinds.

5. 发明专利

JPS58111389A LASER DIODE WITH LIGHT-RECEIVING ELEMENT 失效
公开(公告)号：JPS58111389A
公开(公告)日：1983-07-02
申请号：JP20944781
申请日：1981-12-25
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： TOZAWA MASATO , TAKAHASHI TAKEO , TAKEMURA KANEO
IPC分类号： H01S5/00 , H01S5/022 , H01S5/042
摘要： PURPOSE:To design a circuit easily by drawing out two electrodes of a laser diode element and two electrodes of the light-receiving element as four independent external terminals by using a lead and a package. CONSTITUTION:The laser diode element 4 is fixed at the one side of the upper end of a stem 2 through a sub-mount 3, and the element 4 projects laser beams 5 in the vertical direction from upper and lower end surfaces. A photodiode element (the light-receiving element) 6 is fixed to a flange 1 section to which laser beams 5 advancing downward reach, and monitors the light intensity of laser beams 5. The three leads 27, 28, 29 are penetrated and fastened to the flange 1 through insulators, and the element 4 and the element 6 are arranged among these leads and the package 12. Accordingly, the laser diode has the four external terminals composed of the package 12 and the three leads 27, 28, 29, and the drawing out electrodes of each element become independent to each other.

6. 发明专利

JPS58143594A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS58143594A
公开(公告)日：1983-08-26
申请号：JP2597482
申请日：1982-02-22
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： TAKAHASHI TAKEO , TOZAWA MASATO , MATSUMOTO YOSHITOSHI
IPC分类号： H01S5/00 , H01S5/14
摘要： PURPOSE:To reduce the noise sounding without utilizing additional circuits at all making optical coupling as highly efficient as that of single mode laser by a method wherein an external resonator is provided near semiconductor laser element to fix vertial mode. CONSTITUTION:With specified voltage impressed, the laser beams 6 are emitted from the output surfaces above and below the tip 5 and the upward laser beams 6 advance outside cap 9 through wind glass 8 to irradiate audiodisc surface while the downward laser beams 6 input into light receiving element 7 to be output-monitered partly reflected by the surface returning to the laser element 5 again. The output surface of rear end of the tip 5 forms a common end of the internal resonator of tip 5 and the external resonator comprising the tip 5 and light receiving element 7 while the standing waves of internal and external resonators must be equal in frequency as well as knotty at the output surface of rear end of the tip 5. Therefore if the external resonator length is made shorter than the internal resonator length in terms of frequency, the resultant standing waves and vertical modes may be selected more easily enabling to lock the mode.

7. 发明专利

JPS5887883A LIGHT-EMITTING DIODE ELEMENT 失效
公开(公告)号：JPS5887883A
公开(公告)日：1983-05-25
申请号：JP18535981
申请日：1981-11-20
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： TOZAWA MASATO , TAKAHASHI TAKEO , MATSUMOTO YOSHITOSHI , TAKEMURA KANEO
IPC分类号： H01L33/20 , H01L33/30 , H01L33/58
摘要： PURPOSE:To furnish a light-emitting diode element emitting a large quantity of light from a light-emitting face forward in the frontal direction. CONSTITUTION:A light-emitting element 5 is formed by using a GaAs plate as a substrate, the part of which is ground in the shape of a dome. The dome is formed to have a spheroidal curved surface. In the spheroidal dome thus formed, lights emitted from a light-emitting part 15 are refracted to be parallel to each other when emitted into the air from a light-emitting element body, and they proceed forward, as beams, in the frontal direction of the dome. Therefore, this element, when linked to a lens system and an optical fiber for optical communication, increases sharply a light connection efficiency in comparison with conventional ones. As the result, a margin is added to a current rating by an increase in the light connection efficiency, which prolongs the lifetime of the light- emitting element.

8. 发明专利

JPS57188894A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS57188894A
公开(公告)日：1982-11-19
申请号：JP7349381
申请日：1981-05-18
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： TAKAHASHI TAKEO , TOZAWA MASATO
IPC分类号： H01L31/12 , H01S5/00 , H01S5/024 , H01S5/026 , H01S5/042
摘要： PURPOSE:To obtain a semiconductor laser device with a laser diode whose temperature is accurate and constant and free from fluctuation depending on the passage of time by a construction wherein a transistor for temperature detection is incorporated into a chip of the laser diode. CONSTITUTION:A superior heat conductive insulating plate 19 is used to insulate a laser diode element 17 from a Peltier element 18. As the voltage between te base and emitter, when a constant current is made to flow into a transistor 20 formed within the element 17, changes with the temperature of the element (absolute temperature), the signal is detected by a detector 21 to control the voltage value applied to the Peltier element 18 by a Peltier element controller 22 so as to keep the temperature of the element 17 constant. By the detection of the temperature in the LD cavity, together by the use of the Peltier element as a temperature control medium, the LD may be operated always at a constant temperature.

9. 发明专利

JPS57154870A BIPOLAR TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIER 失效
公开(公告)号：JPS57154870A
公开(公告)日：1982-09-24
申请号：JP3942781
申请日：1981-03-20
申请人： HITACHI LTD
发明人： TOZAWA MASATO , MASUDA AKIRA
IPC分类号： H01L29/73 , H01L21/331 , H01L29/732
摘要： PURPOSE:To improve the forward AGC characteristics as well as to increase the gain-bandwidth product of the subject bipolar transistor by a method wherein high specific resistance is given to a silicon substrate, the width of base is reduced, and low specific resistance is given to the epitaxial layer to be used as a collector region. CONSTITUTION:A transistor is formed by providing an N type epitaxial layer 6 of several tens mum in thickness on the main surface of an N type silicon substrate 5 of several hundreds mum in thickness. The epitaxial layer 6 is turned into a collector region 7 and in the center of its surface layer, a P type base region 8 is formed in the thickness of 2-2.5mum. Further, an N type emitter layer of 1mum or thereabouts is formed in the center of the surface layer section of the base region 8. As a result, the base width a is reduced to 1-1.5mum, the specific resistance of the epitaxial layer 6 is reduced to 1-2OMEGA/cm, and the gain- bandwidth product is increased. Also, the forward AGC characteristics can be improved by increasing the specific resistance of the silicon substrate 5 to 5OMEGA/cm.

10. 发明专利

JPH1187855A SEMICONDUCTOR LASER WITH MODULATOR AND METHOD FOR CONTROLLING IT 失效
公开(公告)号：JPH1187855A
公开(公告)日：1999-03-30
申请号：JP24514797
申请日：1997-09-10
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： TAKIMOTO MASAE , IKEMOTO KIYOMI , HATTORI SHINICHI , TOZAWA MASATO
IPC分类号： H01S5/00 , H01S5/042 , H01S5/068 , H01S3/18 , H01S3/096 , H01S3/133
摘要： PROBLEM TO BE SOLVED: To monitor an optical output without associating a monitoring light receiving element by covering a backward emitting surface with a high reflection film having a reflectivity of a specific value. SOLUTION: A low reflection film 41 is provided on an end face of a modulator 3 side, i.e., an output light emitting surface (forward emitting surface 17), and a high reflection film 42 is formed on an end face (backward emitting surface 18) of a semiconductor laser 2 side. The film 41 has a reflectivity of, for example 1% or less, and the film 42 has a reflectivity of 90 to 100%. Since the semiconductor laser with a modulator uses photocurrent in the modulator 3 as monitoring current for detecting an optical output intensity, a light receiving element for detecting the optical output of the laser with the modulator may not be disposed. Thus, the laser light may not be emitted from the surface 18. And even if the reflectivity is set to 100% at the maximum, there is no obstruction. Thus, an increase in the optical output can be performed.

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