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1. 发明专利

JPS57132332A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57132332A
公开(公告)日：1982-08-16
申请号：JP1697681
申请日：1981-02-09
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： YAGIHARA TOSHIKI , NAKASHIMA YOUICHI , MIURA MASATAMI , KUROSU TOSHIKI , KOJIMA ISAO
IPC分类号： H01L21/52 , H01L21/58 , H01L23/48
摘要： PURPOSE:To increase insulated creeping distance by applying a bending processing to a terminal toward the inside of a ceramic plate at the part close to the ceramic plate in an insulating type semiconductor. CONSTITUTION:A metal radiation substrate 1 is adhered to a main surface of a ceramic plate 3 having electrical insulation through a soldering layer 2. And a metal terminal 6 flowing a current into a semiconductor substrate mounted on the ceramic plate 3 is adhered to the other main surface through a metalized layer 4. At that time, a bending processing such as a terminal bending processing section 6a is applied at the part close to the metalized layer 4 without changing the position at the external part of the terminal exposed to the outside. Furthermore, the external peripheral wire of the ceramic plate 3 and the external peripheral fringe of the metalized layer 4 adhering solder are detached to increase the space AB of insulated creeping distance.

2. 发明专利

JPS57130440A INSULATING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57130440A
公开(公告)日：1982-08-12
申请号：JP1568081
申请日：1981-02-06
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： NAKASHIMA YOUICHI , KUROSU TOSHIKI , MIURA MASATAMI , OOTAKA HIROMI , YAMAZAKI TATSUO
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To elongate insulating creeping distance when a semiconductor element and a terminal are fixed interposing a metalized layer on the surface of a ceramic plate having a heat radiating metal plate on the back, and it is sealed with resin to constitute an insulating semiconductor device by a method wherein a notch is provided to the lower part of the terminal at the position nearby the outside circumference of the ceramic plate. CONSTITUTION:A heat radiating metal plate 1 is adhered on the back of a ceramic plate 3 interposing a solder layer 2 between them, and a metalized layer 4 is formed on the surface of the ceramic plate 3. Then a semiconductor element 10 is fixed on the layer 4 interposing a solder layer 11 between them, a terminal 6 is fixed at the prescribed distance using a solder layer 5, and the element 10 is molded with resin 7 exposing the tip end of the terminal 6. At this constitution, the notch 6a is provided to the lower end of the terminal 6, and accordingly length of the metalized layer 4 is made to short, and the creeping distance between the part A of the notch 6a and the end part B of the solder layer 3 is elongated to ensure dielectric strength.

3. 发明专利

JPS56112753A GATE TURNNOFF THYRISTOR 失效
公开(公告)号：JPS56112753A
公开(公告)日：1981-09-05
申请号：JP1552980
申请日：1980-02-13
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： YAMAZAKI TATSUO , NAGANO TAKAHIRO , SAKURADA SHIYUUROKU , KUROSU TOSHIKI , NAKASHIMA YOUICHI
IPC分类号： H01L29/74 , H01L29/08 , H01L29/744
摘要： PURPOSE:To obtain the GTO (gate turn-off thyristor) having low forward voltage drop by increasing the depth of the n type high density layer for a short emitter deeper than the p type outermost layer at the anode side projecting part of the N type outermost layer and shallower than that at the portion except the projecting part. CONSTITUTION:The GTO has an nE layer 2, a pB layer 3, an nB layer 4, a pE layer 5 and n type high impurity density layers 7a, 7b for the short emitter, The n type high impurity density layers are deeper than the depth l1 of the pE layer at a depth of l2a in the region projected to the anode electrode 13 side of the layer 2 and shallower than that l1 at l2b at the portion except that. Thus, the current path of the layer 5 is expanded laterally to reduce the forward voltage drop and to suppress the carrier injection of the layer 5 at the time of turning off, and the turn- off gain can be increased.

4. 发明专利

JPS57130439A INSULATING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57130439A
公开(公告)日：1982-08-12
申请号：JP1567981
申请日：1981-02-06
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： TAKATSUCHI SHIGEYASU , NAKASHIMA YOUICHI , KUROSU TOSHIKI , MIURA MASATAMI , KOJIMA ISAO
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To reduce the thermal contact resistance between an insulating plate and a heat radiating fin when the fin is to be adhered on the back of the insulating plate fixed with a semiconductor substrate and metal terminals to be connected to electrodes thereof on the surface by a method wherein the back of the insulating plate is scraped off slightly, a metalized layer is adhered thereon, and the metalized layer is made to come in contact with the fin. CONSTITUTION:An insulating plate 2 provided with a semiconductor substrate and metal terminals to be connected thereto interposing plural metalized pattern layers 3 between them on the surface is surrounded with a metal plate 1, and the heat radiating fin 8 is fixed on the back thereof to constitute an insulating semiconductor device. At this constitution, the back of the insulating plate 2 is scraped off slightly, and a metalized layer 31 is adhered on the scraped part arranging the face thereof with the back of the metal plate 1 in face. Accordingly the metalized layer 31 is made to be interposed between the insulating plate 2 and the fin 8, and thermal contact resistance between them is reduced to enhance heat radiating efficiency.

5. 发明专利

JPS55117275A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS55117275A
公开(公告)日：1980-09-09
申请号：JP2443079
申请日：1979-03-05
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： TAKAHASHI KATSUMI , TAKITA JIYUNICHI , NAKASHIMA YOUICHI , AKABANE KATSUMI , SUZUKI TAKASHI , YAMAMOTO SHIGERU
IPC分类号： H01L29/74 , H01L29/08 , H01L29/10
摘要： PURPOSE:To equalize the speed expanding in conducting area in a semiconductor device at high frequency operating time by inclining the n-type emitter layer and reducing the thickness of a p-type base layer thinner at the farther position from the gate. CONSTITUTION:After P-type is diffused on both surface of an N-type substrate 5 to form a PUP junction thereon. the P-type layer 3 is mechanically and chemically polished to incline the main surface thereof. Then, the N-type emitter layer 3 is diffused to form an emitter electrode 2, and a gate electrode 1 is formed on thick side on the P-type base layer 4. Since the P-type base layer 4 is thinner at the farther position from the gate, it can increase the arc sensitivity of infinitesimal SCR at the point, and increase the lateral resistance of the base layer 4 more at the farther position from the gate 1 and decrease the longitudinal resistance thereof. Accordingly, the voltage applies to the infinitesimal SCR at the farther position becomes higher to aid the arcing. Thus, the expanding speed is remarkably equalized on the entire surface of the PN junction as compared with the conventional device.

6. 发明专利

JPS56104481A LIGHT CONTROLLED TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56104481A
公开(公告)日：1981-08-20
申请号：JP682080
申请日：1980-01-25
申请人： HITACHI LTD
发明人： NAKASHIMA YOUICHI , MATSUZAKI HITOSHI , AKABANE KATSUMI , SUZUKI TAKASHI , SAKURABA SHIGEKI
IPC分类号： H01L31/12 , H01L29/74 , H01L31/16
摘要： PURPOSE:To preferably maintain the electric insulating performance of the semiconductor device without decreasing the light signal transmission efficiency by forming a dielectric unit having high dielectric constant around the periphery confronting at least a photodetector of a lead wire. CONSTITUTION:A dielectric unit 12 having higher specific dielectric constant than that of the dielectric 3 is formed on the outer periphery of the lead wire 4 for feeding a light emitting element buried in the dielectric 3 filled in the transmission gap of the light signal between the photodetector 1 and the light emitting element. Accordingly, the electric field intensity produced due to the applied voltage between the photodetector 1 and the light emitting element is divided due to the difference of the dielectric constant between the dielectrices 3 and 12 to thus reduce the electric field intensity around the lead wire 4.

7. 发明专利

JPS5673480A LIGHT CONTROL TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5673480A
公开(公告)日：1981-06-18
申请号：JP15008979
申请日：1979-11-21
申请人： HITACHI LTD
发明人： SAKURABA SHIGEKI , MATSUZAKI HITOSHI , NAKASHIMA YOUICHI , AKABANE KATSUMI
IPC分类号： H01L31/12 , H01L29/74
摘要： PURPOSE:To eliminate electrostatic focusing and increase dielectric strength between a light receiving element and a luminous element by a method wherein a wide conductive electrode is previously formed to an upper section of a lead wire for the luminous element being located at the light receiving element side in transparent dielectric resin into which the lead wire for the luminous element facing to the light receiving element is buried. CONSTITUTION:A luminous element 15 oppositely arranged to a light receiving element not shown in the figure is mounted to insulating plates as follows. That is, the foundation sections of an anode stem 13 and a cathode stem 14 are buried into openings made up among the insulating plates 12A-12C, the luminous element 15 is fastened onto a surface of the foundation section of one stem 13 by using a wax material 16, and an electrode built up to the element 15 is connected to the foundation section of the other stem 14 by means of a lead wire 17. And the element 15 and the lead wire 17 are sealed with transparent dielectric resin 18. In this case, however, a conductive electrode 19 with width far larger than a diameter of the lead wire 17 is formed to the insulating plate 12B, and previously made to be conductive potential with the lead wire 17. Thus, electric force lines generated at the lead wire 17 are dispersed.

8. 发明专利

JPS5613766A SEMICONDUCTOR CONTROLLED RECTIFIER DEVICE 失效
公开(公告)号：JPS5613766A
公开(公告)日：1981-02-10
申请号：JP8824979
申请日：1979-07-13
申请人： HITACHI LTD
发明人： AKABANE KATSUMI , TAKITA JIYUNICHI , NAKASHIMA YOUICHI , SUZUKI TAKASHI , KOJIMA ISAO , MISAWA MICHIHIRO
IPC分类号： H01L29/74 , H01L29/10
摘要： PURPOSE:To improve the resisting quality in di/dt and switching capacity by providing a high impurity concentration region continuously under a gate constituting pnpn thyristor and a metal contact surrounding the gate with an interval. CONSTITUTION:A PB layer is grown on an NB layer. In the surface layer of the PB layer, an annular NE layer 3 is provided by diffusion to form a pnpn structure. Then a gate 5 is provided in the center of the annular layer 3 on the PB layer, and a metal contact 6 is provided surrounding the gate 5 with an interval. The exposed portion of the junction end of the layer 3 on the opposite side to the gate 5 is short- circuited by a cathode contact 4 to form a thyristor. In the constitution, a shallow high impurity concentration layer 7 of the same conductive type as the PB layer is additionally provided in the PB layer so as to be under the gate 5 and the contact 6. This reduces the resistances at the bonded portion of the gate 5 and between the gate 5 and the contact 6.

9. 发明专利

JPS5519815A SEMICONDUCTOR CONTROL RECTIFYING DEVICE 失效
公开(公告)号：JPS5519815A
公开(公告)日：1980-02-12
申请号：JP9150278
申请日：1978-07-28
申请人： HITACHI LTD
发明人： AKABANE KATSUMI , TAKITA JIYUNICHI , NAKASHIMA YOUICHI , SUZUKI TAKASHI , KOJIMA ISAO
IPC分类号： H01L29/74
摘要： PURPOSE:To improve performance of SCR by fixing a part of a gate lead onto a gate electrode provided by surrounding a PB layer and the gate lead. CONSTITUTION:In a hole 12a of a -shape gate electrode 12, a gate lead 10 is welded to a PB layer, and at a center section M, the lead 10 is connected to an electrode 12 at low resistance. By doing so, a gate current does to the PB layer 4 through the electrode 12 from the lead 10, and a resistance of the PB layer between the lead 10 and the electrode 12 is neglected. And therefore, all the resistances become small, and an external power source capacity becomes reduced by this much. And, by reduction in resistance, the gate current is increased, an auxiliary nE layer 6 can be easily biased in order, an initial arc region is expanded, and di/dv resistance value and switching power resistance value become improved.

10. 发明专利

JPS54133887A THYRISTOR 失效
公开(公告)号：JPS54133887A
公开(公告)日：1979-10-17
申请号：JP4119778
申请日：1978-04-10
申请人： HITACHI LTD
发明人： AKABANE KATSUMI , TAKITA JIYUNICHI , SUZUKI TAKASHI , NAKASHIMA YOUICHI , KOJIMA ISAO
IPC分类号： H01L23/04 , H01L21/60 , H01L29/74
摘要： PURPOSE:To prevent the short-circuit and breaking between the gate lead wire and cathode of a plane SCR, by passing a gate pipe through a seal at a groove bottom part formed in an insulating-seal internal wall. CONSTITUTION:Groove 13 connecting to both upper and lower seal terminals is provided where gate pipe 11 inside of insulating seal 9 protrudes, and pipe 11 is protruded from the bottom of groove 13 not protruding from the internal circumference of the seal. In this constitution, when gate lead wire 7 is inserted into protective tube 12 to connect gate to gate pipe 11, the tip of the pipe protrudes from the gate-lead fitting position of semiconductor substrate 4. Consequently, the lead wire is prevented from being exposed even if the insulating tube comes off from pipe 11, and a breaking of lead wire 7 can also be prevented which is caused by the elasticity of tube 12.

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