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    • 2. 发明专利
    • DELAY CIRCUIT
    • JPS60103822A
    • 1985-06-08
    • JP21097783
    • 1983-11-11
    • HITACHI LTDHITACHI ELECTR ENG
    • NIIZAKI SHINYASAITOU TAKASHIYAMAMURA HIDEHOHAYASHI SHINICHI
    • H03K5/00H03K5/13H03K5/133
    • PURPOSE:To obtain a delay circuit in which a maximum variable delay time is set optionally by providing a waveform shaping circuit having an output stage of open emitter and a comparator circuit comparing the output of waveform shaping circuit with a reference voltage in response to a desired delay time and obtaining an output pulse giving a desired delay time to the front edge or the rear edge to decrease the control voltage. CONSTITUTION:An IC1 is a comparator (or line receiver) whose output stage is open emitter and a constant current circuit CG and a capacitor C are connected to the output terminal. An IC2 is a comparator (or line receiver) with a high input impedance, an output of the comparator IC1 is connected to one input terminal E and a DC reference voltage Vref is applied to the other input terminal F. The constant current circuit CG can be a circuit comprising an operatonal amplifier IC, a transistor Q and a resistor R, the maximum variable delay time is set optionally and the delay time of the front edge and rear edge of an input pulse waveform is set independently.
    • 4. 发明专利
    • PROBE
    • JPS60260861A
    • 1985-12-24
    • JP11639084
    • 1984-06-08
    • HITACHI LTD
    • NIIZAKI SHINYAYAMAMURA HIDEHOSAITOU TAKASHI
    • G01R31/26G01R1/06G01R1/073H01L21/66
    • PURPOSE:To transmit a signal of high frequency and high speed without distortion, and to inspect a semiconductor pellet of high frequency and high speed by structuring the part extending to the tip of a probe by a micro strip line. CONSTITUTION:A micro strip line is formed by constituting one face of a base film 6 of a ground electric conductor, and providing a signal wire 7 on the other face. A dam 10 consisting of an organic substance is formed in the tip of a probe, namely, a contact part with a semiconductor pellet, and a contactor 9 is formed adjacently to said dam. The other end of the probe is connected to a probe card 2 consisting of a strip line structure. When executing an inspection, a force is applied to the probe part by using a probe holding jig 13 from the upper part of the probe, and the probe is brought into contact with a semiconductor pellet to be measure 1. In this case, the force applied to a terminal electrode 5 of the semiconductor pellet can be adjusted by adjusting the applied force of the probe holding jig 13.
    • 6. 发明专利
    • Semiconductor device
    • 半导体器件
    • JPS60214546A
    • 1985-10-26
    • JP7255084
    • 1984-04-10
    • Hitachi Ltd
    • HARADA EIJISAKAMOTO HISASHIMATSUZAKI HITOSHISAITOU TAKASHIHIRAYAMA HIDEO
    • H01L23/12H01L21/52H01L21/58H01L23/02H01L23/13
    • H01L23/13H01L2224/37147H01L2224/3754H01L2224/37599H01L2224/40H01L2224/40091H01L2224/40225H01L2224/83801H01L2224/84801H01L2924/00014H01L2924/00012
    • PURPOSE:To contrive to eliminate the generaion of a crack and a deficit in the semiconductor substrate by a method wherein a space is formed on the side of an electrode plate in the inner wall of the aperture of the ring-shaped insulating material and the semiconductor substrate and the insulating material are not brought into contact with each other by the formation of the space. CONSTITUTION:A ring-shaped insulating material 108 has been performed a chambering work on the side of an anode electrode plate 7 in the inner wall of its aperture and a space S1 has been formed there. The space S1 is formed in a dimension (l2) that a semiconductor substrate 1 doesn't come into contact with the insulating material 108 even through the minimum relative deviation (l1) arised due to the following two: the maximum relative deviation (l1) between the semiconductor substrate 1 and the insulating material 108 due to the dimensional torelance of a positioning jig (not shown in the diagram), which is used when the semiconductor substrate 1 is bonded, parts and so forth; and the thickness (t1) of the semiconductor substrate 1. (Provided that, l2>l1 and t2>t1). Accordingly, there is no possibility that the semiconductor substrate 1 and the insulating material 108 come into contact with each other. As a result, as no contact of both generates even during the time when heat is dropping, no crack and deficit generate in the semiconductor substrate 1.
    • 目的:通过在环状绝缘材料的孔的内壁上的电极板的侧面形成空间的方法和半导体衬底的半导体衬底中,形成半导体衬底的裂纹和缺陷的方法, 基板和绝缘材料不会通过形成空间而彼此接触。 构成:已经在其孔的内壁中的阳极板7的侧面上进行了环状绝缘材料108的制作,并且在其中形成了空间S1。 空间S1形成在半导体衬底1不与绝缘材料108接触的尺寸(12)中,即使由于以下两个原因而导致的最小相对偏差(l1):最大相对偏差(l1) 由于半导体基板1被接合时使用的定位夹具(图中未示出)的尺寸相关性,在半导体基板1和绝缘材料108之间。 和半导体衬底1的厚度(t1)(假设l2> l1和t2> t1)。 因此,半导体衬底1和绝缘材料108不可能彼此接触。 结果,即使在热量下降的时间内两者的接触也不会产生,在半导体衬底1中不产生裂纹和缺陷。
    • 8. 发明专利
    • DELAY CIRCUIT
    • JPS6048614A
    • 1985-03-16
    • JP15625183
    • 1983-08-29
    • HITACHI LTD
    • SAITOU TAKASHITSUNODA TOYOJINIIZAKI SHINYA
    • H03K5/04H03K5/13
    • PURPOSE:To improve the selectivity of a delay to the leading and trailing of a pulse signal waveform by impressing an NOT output of a differential amplifier circuit to a diode and a capacitor connected in series and connecting a resistor to the diode and the capacitor in parallel. CONSTITUTION:A pulse is inputted differentially to inputs 15, 16 of the differential amplifier 14 and its output 17 is impressed to an impedance comprising the series connection of the diode 18 and the capacitor 19. Further, the resistors 22, 23 are connected respectively in parallel with the diode 18 and the capacitor 19 in order to operate the diode and form an RC integration circuit in said termination impedance. When the level of the NOT output 17 of the differential amplifier in the circuit goes from Lo to Hi, the diode 18 is conductive, the capacitor 19 is charged in a short time so as to quicken the leading of the pulse signal waveform. When the level goes from Hi to Lo, a reverse bias is applied to the diode 18, which is made nonconductive thereby slowing down the trailing of the waveform. As a result, a waveform where the difference between the leading time and the trailing time is large is obtained so as to improve the selectivity of the delay.