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1. 发明专利

JPH1078383A GAS DUST COLLECTION SYSTEM 失效
公开(公告)号：JPH1078383A
公开(公告)日：1998-03-24
申请号：JP23282296
申请日：1996-09-03
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： NAKANO TOSHIO , MAKI MASAHIRO , SAKAI SHOZO , MAYAMA KOICHI , TOMIOKA HIDEKI
IPC分类号： G01N1/02 , G01N1/22
摘要： PROBLEM TO BE SOLVED: To provide a gas dust collection system on which an analytical object range is wide and which is technically easy and is inexpensive. SOLUTION: This system sucks gas containing a pollutant being an analytical object from a suction port 5, and mixes pure water vapor generated by a vapor generator 14 of a proper quantity in this sucked gas, and sends it in a condenser 8, and cools and condeses it in the condenser 8 together with moisture originally contained in the gas, and generates a condensate containing the pollutant by the comparatively high concentration, and flows down this condensate to a recovering reservoir 11, and sends it to a component analyzing system 13, and continuously performs processing to diffuse an uncondensed quantity of the gas by a suction pump 7. In this case, piping 15, 18, 20 of this system is formed of SUS 316, and its inside surface is covered with a chromium oxide layer.

2. 发明专利

JP2000036479A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000036479A
公开(公告)日：2000-02-02
申请号：JP20293098
申请日：1998-07-17
申请人： HITACHI LTD
发明人： HARA KOJI , TAKAHARA YOICHI , SAEKI TOMONORI , TOMIOKA HIDEKI , ITO MASAKI , TSUGANE MASARU , ITO HARUO , FUNAHASHI TOMOMASA
IPC分类号： H01L21/28 , H01L21/304 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To enhance reliability by employing a mixed liquid of a specified tertiary ammonium hydroxide, hydrogen peroxide water and ultrapure water in the cleaning after formation of a gate electrode using a high melting point metal nitride, i.e., tungsten nitride. SOLUTION: A multiplayer conductor film including a high melting point metal nitride, i.e., tungsten nitride film, is formed on a semiconductor substrate and patterned into a desired shape before being cleaned. A mixed liquid of a tertiary ammonium hydroxide, hydrogen peroxide water and ultrapure water represented by a formula [I(R1)nN(R)4-n+OH- (R1 is alkyl group of 1-4C, R is alkyl group of 1-4C or hydroxy substituted alkyl group of 1-4C, R1 and R may be identical or not, and n is an integer of 1-3)]. According to the method, the tungsten nitride film can be protected against being etched at the time of cleaning.

3. 发明专利

JP2000012775A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000012775A
公开(公告)日：2000-01-14
申请号：JP17339798
申请日：1998-06-19
申请人： HITACHI LTD
发明人： MIYAUCHI AKIHIRO , INOUE HIRONORI , SUZUKI TAKAYA , KIMURA SHINICHIRO , SHIBA TAKEO , ANDO TOSHIO , OKAWA AKIRA , TOMIOKA HIDEKI , YAMAMOTO TOMOSHI
IPC分类号： H01L27/04 , H01L21/822
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with an electrode where fine and granular semiconductors are uniformly formed on its surface at a low cost. SOLUTION: A gate electrode 103, a source electrode formed of an N-type diffused layer 104, and a drain electrode formed of an N-type diffused layer 105 are formed on a P-type silicon substrate 100 for the formation of a MOSFET, a columnar capacitor is composed of a second lower electrode 108, a dielectric film 110, and an upper electrode 111, where granular silicon germanium semiconductors are provided to the second lower electrode 108 for enlarging the capacitor in electrostatic capacity in a semiconductor memory device. The second lower electrode 108 of a polycrystalline silicon film is formed on the surface of a first lower electrode 107, and when silicon germanium is deposited on the surface of the second lower electrode 108, granular silicon germanium bodies 109 are formed by crystal grain boundaries present on the surface of the second lower electrode 108.

4. 发明专利

JPH10284570A SEMICONDUCTOR MANUFACTURING DEVICE AND MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING IT 失效
公开(公告)号：JPH10284570A
公开(公告)日：1998-10-23
申请号：JP9050297
申请日：1997-04-09
申请人： HITACHI LTD
发明人： TSUGANE MASARU , TOMIOKA HIDEKI
IPC分类号： H01L21/677 , H01L21/205 , H01L21/304 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To maintain the clean surfaces of wafers treated in the preceding processes so that the wafers may be treated in the succeeding process even when the wafer-treating chamber of the succeeding process gets out of order by keeping the wafers in an inert gas atmosphere. SOLUTION: A semiconductor manufacturing device incorporates a wafer keeping section 7 which is filled up with an inert gas, such as the nitrogen gas, etc. When a series of cleaning treatment is performed on wafers, the wafers are kept in the wafer keeping section 7. After keeping, the wafers are heat- treated by moving the wafers to a heat-treating chamber 8 of the next process from the section 7. When the chamber 8 of the next process gets out of order, all uncleaned and cleaned wafers in the areas of wafer transporting sections 2, 4, and 6 are cleaned in a cleaning chamber 5 and kept in the wafer keeping chamber 7.

5. 发明专利

JPH10275803A MANUFACTURE OF SEMICONDUCTOR 失效
公开(公告)号：JPH10275803A
公开(公告)日：1998-10-13
申请号：JP7956397
申请日：1997-03-31
申请人： HITACHI LTD
发明人： TSUTSUMI YOSHITSUGU , TOMIOKA HIDEKI , KUNITOMO MASATO
IPC分类号： C23C16/44 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To improve the productivity of a method for manufacturing a thin film for semiconductor. SOLUTION: In a method for manufacturing semiconductors, a location for vaporizing liquid material 27 with less space for reducing the supply of excessive material and for saving to produce unnecessary film is determined in a place much closer to the space where the file manufacture is processed. Conversely, by supplying the liquid material 27 as much as is required for a reaction, no unnecessary film is formed and the defects of semiconductor elements can be eliminated, because the over-supply of the material 2 is eliminated. In addition, the availability of a semiconductor manufacturing device is significantly improved, because it also becomes unnecessary to stop the device.

6. 发明专利

JPH08288248A LIQ. CONTACTING MEMBER 失效
公开(公告)号：JPH08288248A
公开(公告)日：1996-11-01
申请号：JP8950295
申请日：1995-04-14
申请人： WATANABE M & CO LTD , HITACHI LTD
发明人： OTAKE MASAHIRO , UMEDA MASARU , TOMIOKA HIDEKI , NITTA TAKEHISA
IPC分类号： H01L21/673 , H01L21/304 , H01L21/68
摘要： PURPOSE: To provide a liq. contacting member having a high resistance to various chemicals and high mechanical strength, characterized in that the elution of an impurity is quite little and never stains a cleaning liq. or cleaned sample. CONSTITUTION: At least the surface making contact with a liq. is composed of a SiC film formed by the chemical vapor deposition method.

7. 发明专利

JPH06310485A DUSTFREE CLAMPING METHOD FOR WAFER 失效
公开(公告)号：JPH06310485A
公开(公告)日：1994-11-04
申请号：JP9733493
申请日：1993-04-23
申请人： HITACHI LTD
发明人： AOKI YOSHIO , OGOSHI YOSHINORI , SUGAWARA NOBUYUKI , CHIKAOKA RYOSAKU , SUZUKI MUNENOBU , INAYOSHI KENJI , TOMIOKA HIDEKI , TSUGANE MASARU
IPC分类号： H01L21/304 , H01L21/68 , H01L21/683
摘要： PURPOSE:To enable cleaning in a dustfree, low-stress, ultra clean environment by rectilinearly moving a plurality of clamping pawls to diagonally clamp a wafer, and separating a mechanical section from the clamping pawls on drive axis by means of a diaphragm. CONSTITUTION:A cleaning equipment consists of a cleaning bath 1 and its lid 9 including the chamber 8 of a mechanism for driving pawls to clamp a wafer. The pawl driving mechanism chamber 8 consists of driving motors 5 and pressure sensors 4. The mechanism horizontally drives clamping pawls 2, separated therefrom by a diaphragm 3, on the cleaning bath 1 side to clamp a wafer. A plurality of the clamping pawls 2 are different from each other in length in the direction of opposite side. When receiving a wafer 6, therefore, the pawls 2 clamps it with a certain inclination. This obtains wafers free from spontaneous oxide films which are necessary in the development of devices with 0.3mum or below.

8. 发明专利

JPS6428819A METHOD AND DEVICE FOR PATTERN REPLICATION 失效
公开(公告)号：JPS6428819A
公开(公告)日：1989-01-31
申请号：JP18330087
申请日：1987-07-24
申请人： HITACHI LTD
发明人： TOMIOKA HIDEKI
IPC分类号： G03F9/00 , H01L21/027 , H01L21/30 , H01L21/68
摘要： PURPOSE:To enable relative alignment of an element to be transferred to be made with a negative by a method wherein the rear side of the element to be transferred is irradiated with an alignment light to detect an alignment mark made on the element to be transferred. CONSTITUTION:An alignment light source 8b is lighted; the alignment light is divided into two parts by a half mirror 8C; one light irradiates the bottom surface of a negative 4; while the other light irradiates the rear side of an element 2 to be transferred. An X-Y table 1 and a negative mounting base 3 are relatively moved on a horizontal surface so that an alignment mark M made on the element to be transferred and another alignment mark made on the negative 4 may be aligned with a photodetector 8g. Through these procedures, the specified position of the element 2 to be transferred mounted on the table 1 can be precisely aligned with the negative 4 mounted on the base 3.

9. 发明专利

JP2000306902A SEMICONDUCTOR MANUFACTURE DEVICE 失效
公开(公告)号：JP2000306902A
公开(公告)日：2000-11-02
申请号：JP11472699
申请日：1999-04-22
申请人： HITACHI LTD
发明人： TSUTSUMI YOSHITSUGU , OKAMOTO YOSHIO , TOMIOKA HIDEKI , OKAWA AKIRA , ANDO TOSHIO
IPC分类号： H01L21/31
摘要： PROBLEM TO BE SOLVED: To perform on/off operation of a valve at restarting film growth without fail, by providing a semiconductor manufacturing device with a function of giving a valve start driving force larger than normal driving force applied to the valve, so as to open the closed nozzle, when forming a film on a wafer by atomization of liquid material. SOLUTION: This device is one which deposits a film for a semiconductor element on the surface of a wafer by chemical deposition in decompressed vapor phase, and a carburetor 9 and valves 30-32 are installed. For a carburetion mechanism 3, liquid material 15 stored in a liquid material tank 14 is pressure- fed by gas for sending out, and it is supplied to a nozzle 20 via the valve 30. The carburetor controller 9 outputs such a start signal as to last for hours as compared with the drive signal at the time of normal film growth. By doing it this way, a ball valve is given stronger force than usual, so the ball valve and an orifice can be separated from each other at the face where they are set firmly to each other or a film was adhering, and the ball valve opens without fail.

10. 发明专利

JP2000228363A METHOD OF PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JP2000228363A
公开(公告)日：2000-08-15
申请号：JP2963399
申请日：1999-02-08
申请人： HITACHI LTD
发明人： TSUTSUMI YOSHITSUGU , OKAMOTO YOSHIO , TOMIOKA HIDEKI , OKAWA AKIRA , ANDO TOSHIO
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To enhance productivity of a method of producing a thin film for a semiconductor. SOLUTION: This manufacturing method comprises a step of controlling a deposition reaction so that in depositing a thin film for a semiconductor device using a liquid raw material, a residual raw material 27 in a liquid raw material discharge port 21a within a vaporizing nozzle 21 do not react to oxygen and/or water in the air, even if a vacuum container 5 is opened. Thereby, productivity of semiconductor devices is enhanced, because it is not necessary to perform maintenance of the vaporizing nozzle 21 prior to restart of the apparatus.

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