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1. 发明专利

JPH03282403A COLOR SOLID-STATE IMAGE PICKUP ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH03282403A
公开(公告)日：1991-12-12
申请号：JP32613689
申请日：1989-12-18
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： SUGIYAMA HISASHI , TANAKA JUN , MATSUYAMA HARUHIKO , NATE KAZUO , SHOJI FUSAJI , NAKANO TOSHIO , IZUMI AKIYA , ISODA TAKASHI
IPC分类号： G02B5/20 , H01L27/14 , H04N5/335 , H04N5/365 , H04N5/369 , H04N9/07
摘要： PURPOSE:To obtain flattened color filters in the same plane on a substrate by providing a flattening layer made of a transparent material, providing partition wall layers made of organic silicon material layers in an area on a scanning part on the flattening layer, and arranging the color filters. CONSTITUTION:This element is provided with a photodetection part 101 which performs photoelectric conversion, the scanning part 102 which leads out an electric signal generated by the photodetection part, and the flattening layer 103 made of the transparent material on the semiconductor substrate where a passivation film for protecting the photodetector part and scanning part is formed. Then the color filter 107-110 are arranged on the same plane opposite the photodetection part on the flattening layer across the organic silicon material 104. Consequently, the color filters 107-110 can be formed on the same plane in the area partitioned by the partition wall made of the organic silicon material layer 104, and high sensitivity and high resolution are obtained without variance in spectral sensitivity nor color blurring.

2. 发明专利

JPH0418759A SOLID-STATE COLOR IMAGE PICKUP DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0418759A
公开(公告)日：1992-01-22
申请号：JP12111290
申请日：1990-05-14
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： SUGIYAMA HISASHI , TANAKA JUN , MATSUYAMA HARUHIKO , NATE KAZUO , SHOJI FUSAJI , NAKANO TOSHIO , IZUMI AKIYA , ISODA TAKASHI
IPC分类号： G02B5/20 , H01L27/14 , H04N5/335 , H04N5/357 , H04N5/372 , H04N9/07
摘要： PURPOSE:To enable a solid-state color image pickup device which is free from dispersion in spectral sensitivity and color bleeding and high in sensitivity and resolution to be manufactured through a simple process by a method wherein a color filter excellent in resolution is formed on the same plane on the flattened substrate. CONSTITUTION:A transparent flattening layer 103 and a dyeable material layer 104 are formed on a solid-state image pickup device substrate 100 composed of a semiconductor on which a photodetective section 101, a scanning section 102, and a passivation film formed to protect them are provided. Then, a resist pattern 105 is formed at a position correspondent to a photodetective section, an etching process is carried out using the resist pattern 105 as a mask to form the dyeable material layer 104 into a pattern. Then, a resist pattern 106 is formed at a prescribed position, and the dyeable material pattern is dyed a required color using the pattern 106 as a mask. Color filters 107-109 of required colors are formed on the same plane, a transparent protective film 110 is formed, and thus a color solid-state image sensor can be obtained. Furthermore, a UV resist pattern is provided and then formed into micro lenses by heating.

3. 发明专利

JPH0418758A SOLID-STATE COLOR IMAGE PICKUP DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0418758A
公开(公告)日：1992-01-22
申请号：JP12111190
申请日：1990-05-14
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： TANAKA JUN , SUGIYAMA HISASHI , MATSUYAMA HARUHIKO , NATE KAZUO , SHOJI FUSAJI , NAKANO TOSHIO , IZUMI AKIYA , ISODA TAKASHI
IPC分类号： G02B5/20 , C07F7/08 , H01L27/14 , H04N5/335 , H04N5/357 , H04N5/372 , H04N9/07
摘要： PURPOSE:To improve an image pickup device in spectral characteristics and sensitivity so as to enable a solid-state color image pickup device which is excellent in resolution and color separation power to be offered by a method wherein a transparent material flattening layer is provided onto a solid-state image pickup device substrate, and a color filter layer of colorant is provided at a position correspondent to a photodetective section. CONSTITUTION:A transparent flattening layer 22 is formed on a semiconductor solid- state image pickup device substrate 21 composed of a photodetective section, a scanning section, a passivation film which protects the above sections, and others, then a colorant layer 231 of required color is formed on the flattening layer 22, and a pattern 24 is formed thereon. Then, a color filter pattern is 231 is formed at a prescribed position using the pattern 24 as a mask through dry etching. This procedure is repeated as many times as the number of types of colorants, whereby color filter layers 23 of prescribed colors and surface layers 24 are formed on the same plane. In succession, all the surface layers 24 are exposed to light and decolored, a transparent material surface protective layer 25 is formed, and thus a solid-state color image pickup device can be obtained. Moreover, the surface layers 24 are heated to turn into micro convex lenses.

4. 发明专利

JPH03189604A COLOR SOLID-STATE IMAGE PICKUP ELEMENT AND PRODUCTION THEREOF 失效
公开(公告)号：JPH03189604A
公开(公告)日：1991-08-19
申请号：JP32846989
申请日：1989-12-20
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： SUGIYAMA HISASHI , TANAKA JUN , MATSUYAMA HARUHIKO , NATE KAZUO , SHOJI FUSAJI , NAKANO TOSHIO , IZUMI AKIYA , ISODA TAKASHI
IPC分类号： G02B5/20 , H01L27/14 , H04N5/335 , H04N5/365 , H04N5/372 , H04N9/07
摘要： PURPOSE:To eliminate the fluctuations in spectral characteristics and to provide a higher sensitivity and resolution by providing a flattening layer consisting of a transparent material on semiconductors formed with a photodetecting part, scanning part and passivation film and forming color filter patterns protected with an org. silicone material layer thereon. CONSTITUTION:The org. silicone material is applied on the semiconductors formed with the scanning part 102 for taking out the electric signal generated in the photodetecting part 101 for making photoelectric conversion and the passivation film to protect these parts on the photodetecting part and is flattened by prebaking or the transparent polyimide precursor the molecular terminals of which are previously end capped is flattened by heating and curing. The color filter patterns protected with the org. silicone material layer are formed by as much as a desired number of colors. Namely, a filter material 104 is formed on the flattened flattening layer 103 and the film of an org. silicone resist 105 is formed thereon and is exposed and developed, by which the patterns are formed in the desired positions. The filter material 104 is then dry etched with the patterns of the resist as a mask and the film of an org. silicone material 106 is formed thereon.

5. 发明专利

JPH0427161A COLOR SOLID-STATE IMAGE SENSOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0427161A
公开(公告)日：1992-01-30
申请号：JP13128490
申请日：1990-05-23
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： TANAKA JUN , SUGIYAMA HISASHI , MATSUYAMA HARUHIKO , NATE KAZUO , SHOJI FUSAJI , NAKANO TOSHIO , IZUMI AKIYA , ISODA TAKASHI
IPC分类号： G02B5/20 , C07F7/18 , C08G73/10 , H01L27/14
摘要： PURPOSE:To form a flattened layer having excellent flattening effect, and to obtain a color solid state image sensor having no defect at a color filter, and excellent spectral characteristic and sensitivity by the sensor formed of a polyimide layer made of a polyimide precursor in which the flattened layer is end- capped at a molecule end. CONSTITUTION:A color solid state image sensor formed of a polyimide layer made of a polyimide precursor represented by a formula (I) is employed. How ever, Ar and Ar in the formula (I) are organic groups for not disturbing light transmission in a visible light band. The Ar is a tetravalent organic group containing 4 or more carbons, the Ar is a bivalent organic group, m is 0 or integer number of 1 - 3, and n is integer number of 1 - 100. A solid state image sensor substrate 1 having an uneven step of a base is coated with polyimide precursor varnish, heated in a nitrogen atmosphere to form a high transparency flattened layer 2.

6. 发明专利

JPH0451568A COLOR SOLID-STATE IMAGE SENSING ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH0451568A
公开(公告)日：1992-02-20
申请号：JP15966990
申请日：1990-06-20
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： SUGIYAMA HISASHI , TANAKA JUN , MATSUYAMA HARUHIKO , NATE KAZUO , HAMAMOTO TATSUO , IZUMI AKIYA , ISODA TAKASHI , NAKANO TOSHIO
IPC分类号： H01L27/14
摘要： PURPOSE:To enhance a resolution property by a method wherein color filters in which adjacent peripheral edges of the individual filters are surrounded by partition layers composed of organic silicon material layers containing a light-absorbing agent are formed inside the same plane on a flattening layer. CONSTITUTION:A transparent flattening layer 103 in which at least the surface is constituted of an organic silicon material is formed on a semiconductor substrate 100 on which photodetection parts 101 used to execute a photoelectric conversion operation in advance, scanning parts 102 used to take out an electric signal generated at the photodetection parts and a passivation film used to protect said photodetection parts and said scanning parts have been formed. Individual color filters 108 to 111 are formed in positions corresponding to the photodetection parts 102 inside the same plane via partition walls 106a' constituted of an organic silicon material 106a containing a light-absorbing material. A transparent protective film 106 is formed on the color filters; in addition, convex microlenses 112'' are formed in positions corresponding to the photodetection parts on the transparent protective film 106. Thereby, it is possible to ensure a high sensitivity and a high-resolution property without an irregularity in spectroscopic sensitivity and without a color blur.

7. 发明专利

JPH0983145A CIRCUIT BOARD AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPH0983145A
公开(公告)日：1997-03-28
申请号：JP18039696
申请日：1996-07-10
申请人： HITACHI LTD
发明人： TOGAWA HIDEO , YABUSHITA AKIRA , INOUE TAKASHI , NARIZUKA YASUNORI , SHIGI HIDETAKA , OGIWARA MAMORU , MATSUYAMA HARUHIKO , TANAKA MINORU
IPC分类号： H05K1/11 , H05K1/03 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To improve connection between a conductor on the side of a ceramic substrate and a thin film circuit by making the area of an exposed first thick film conductor pattern larger than the area of a first thin film conductor pattern where it makes contact with the first thick film conductor pattern. SOLUTION: A first conductor 2 on the surface of a first ceramic substrate 1 has a wide area such that it does not make contact with a surrounding conductor. The shape of the first conductor pattern 2 is advantageously substantially a square. Then, an insulating material 5 is formed forming a via hole, and the first conductor 2 on the ceramic substrate 1 and a thin film circuit 8 are electrically connected via the via hole. Since the first conductor pattern 2 on the side of the ceramic substrate 1 has a wide area and the size of the via hole can be made small to the limit, displacement of the first conductor pattern 2 of the ceramic substrate 1 and variations of the displacement can be allowed up to the area of the first conductor pattern 2. Then, a conductor material 11 is deposited over the entire area and is patterned into a desired shape.

8. 发明专利

JPH07321467A THICK FILM/THIN FILM MULTILAYER WIRING BOARD 失效
公开(公告)号：JPH07321467A
公开(公告)日：1995-12-08
申请号：JP11621894
申请日：1994-05-30
申请人： HITACHI LTD
发明人： SUGANO KENICHI , MATSUYAMA HARUHIKO , TANAKA MINORU
IPC分类号： H05K3/46
摘要： PURPOSE:To obtain a high density and economical thick film/thin film multilayer wiring board excellent in mass productivity in which insufficient connection due to fluctuation in the shrinkage percentage at a thick film wiring board part is prevented. CONSTITUTION:The multilayer wiring board for a module mounting an LSI comprises a thin film wiring part 10 and a thick film wiring board part 20, wherein a thick film wiring layer is connected through a thick film via 22 exposed to the surface of the board with a thin film pad 13 of a thin film wiring 11. Thick film vias 30 for alignment, used at the time of forming the thin film pads 13, are exposed while being recessed on the surface of the thick film wiring board part 20. Since the thick film and thin film patterns can be aligned relatively conveniently and economically using the thick film vias for alignment, insufficient connection of thick and thin films due to fluctuation in the shrinkage percentage of the thick film board can be prevented.

9. 发明专利

JPH0777808A ALIGNING METHOD, ALIGNER AND ALIGNING SYSTEM 失效
公开(公告)号：JPH0777808A
公开(公告)日：1995-03-20
申请号：JP22541093
申请日：1993-09-10
申请人： HITACHI LTD
发明人： YOSHIMOTO MITSUO , MIURA SHINYA , SUGANO KENICHI , MATSUYAMA HARUHIKO , YAMAZAKI TETSUYA , INOUE TAKASHI
IPC分类号： G03F7/20
摘要： PURPOSE:To form a highly accurate thin film pattern on a ceramic substrate by calculating the quantity of correcting an aligning focal point based on 1st and 2nd measured values and aligning after setting an aligning focus on a position including the correction quantity. CONSTITUTION:The system is constituted of a flatness measuring machine 1 for measuring a three-dimensional coordinate from a reference point on an optional point of the ceramic and transferring data to an arithmetic processing and storing device 2, an arithmetic processing and storing device 2 for storing the data transmitted from the flatness measuring machine 1 and an aligner 3, executing a calculation processing and transferring the data to the aligner 3 and the aligner 3. By such a constitution, the flatness of a desired point on the substrate is measured, and the 1st measured value is stored, the flatness on a part of the desired point on the substrate in the aligning position is measured so as to obtain the 2nd measured value, then, the quantity of correcting the aligning focal position is calculated based on the 1st and 2nd measured values, the aligning focus is set on the position including the correction quantity, thereafter, the alignment is executed.

10. 发明专利

JPH05190413A FORMATION METHOD OF PHOTOSENSITIVE RESIN FILM AND THIN-FILM MULTILAYER WIRING BOARD 失效
公开(公告)号：JPH05190413A
公开(公告)日：1993-07-30
申请号：JP425492
申请日：1992-01-14
申请人： HITACHI LTD
发明人： NISHIKAME MASASHI , MATSUYAMA HARUHIKO , YOSHIMOTO MITSUO , SHIGI HIDETAKA , YUUKI YOSHIFUMI , SUGANO KENICHI
IPC分类号： H01L21/027 , G03F1/54 , H01L23/12 , H05K3/00 , H05K3/46
摘要： PURPOSE:To provide the formation method, of a photosensitive resin, wherein the pattern working accuracy of the photosensitive resin and the residual rate of a film can be made good by one exposure operation and to provide a thin- film multilayer wiring board wherein the formation method of the photosensitive resin is used and the connecting reliability of a through hole part is high. CONSTITUTION:A device which is composed of a substratum substrate 1, an Al interconnection 2 and a negative-type photosensitive polyimide film 3 is exposed to light. At the same time, the device is exposed to light by using a photomask 4 in which a filter 6 having a light-transmitting quantity adjustment function has been installed at the boundary between a light-shielding part pattern 5 and a light-transmitting part 7. Thereby, a prescribed pattern is formed.

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