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    • 2. 发明专利
    • SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
    • JP2000195986A
    • 2000-07-14
    • JP37032698
    • 1998-12-25
    • HITACHI LTD
    • HOZOJI HIROYUKITSUNODA SHIGEHARUSERIZAWA KOJISAEKI JUNICHI
    • H05K1/18H01L21/60H01L23/12
    • PROBLEM TO BE SOLVED: To make the terminals of a semiconductor device difficult to deform before the mounting and make them relax its mounting stress after the mounting, by connecting with its respective electrodes arranged in an area-array form annular terminals for connecting with the electrodes of a mounting board its respective electrodes arranged in an area-array form. SOLUTION: A semiconductor element 1 is mounted on a circuit board 2 for connecting it electrically with the circuit board 2 by bonding wires 3. On the back surface of the circuit board 2 to its surface of mounting thereon the semiconductor element 1, electrodes 4 used for the connection with a mounting board whereon the semiconductor device is mounted are provided to connect them via solders 5 with terminals 6 formed into annular shape. Furthermore, for protecting the semiconductor element 1 and the connecting portions of the bonding wires 3 with the board 2, the semiconductor element mounting surface of the board 2 is coated with a sealing resin 7, etc. As the metal for forming the annular terminals 6, alloys can be utilized wherein one kind of gold, silver, lead, and so forth or two or more kinds of them are mixed with an alloy made of iron/nickel, and the foregoing alloys subjected to an suitable plating with satisfactory wettable solders can be also utilized.
    • 9. 发明专利
    • MANUFACTURE OF THIN FILM DIFFRACTION GRATING
    • JPS63113506A
    • 1988-05-18
    • JP25823386
    • 1986-10-31
    • HITACHI LTD
    • SATO HIDEMIHIYOSHI YASUOKANEDA AIZOTSUNODA SHIGEHARU
    • G02B6/122G02B6/124
    • PURPOSE:To realize a high stabilization by a high diffraction efficiency by forming a chalcogenide glass layer on a substrate, radiating an electron beam onto a metallic thin film formed on said layer and forming periodically a metallic diffusion layer to a desired depth from an interface which comes into contact with the metallic thin film, and providing a refractive index distribution. CONSTITUTION:A chalcogenile glass layer 3 is formed on a substrate 1, a metallic thin film 4 is formed on said layer, and by radiating an electron beam 5 onto said film, a metallic diffusion layer is formed periodically extending over a desired depth from an interface which comes into contact with the metallic thin film of the chalcogenide glass layer, and a refractive index distribution is provided. A refractive index of the substrate is 3.4-3.5, 3.3-3.6, 2.1-2.6 and 1.3-2.0, in case of silicon, a semiconductor or GaAs, etc., an optical crystal of LiNbO3, etc., and silica compound glass, respectively, and a refractive index of the chalcogenide glass layer is 2.1-3.1. When the refractive index of the substrate which comes into contact with the chalcogenide glass is smaller than that of the chalcogenide glass, light can be confined in the chalcogenide glass being a waveguide layer.