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    • 2. 发明专利
    • Ion implanting device
    • 离子植入装置
    • JP2010161079A
    • 2010-07-22
    • JP2010036721
    • 2010-02-22
    • Hitachi Ltd株式会社日立製作所
    • TOMITA HIROYUKIMERA KAZUOHASHIMOTO ISAONAKANO YASUKISEKI TAKAYOSHI
    • H01J37/317
    • PROBLEM TO BE SOLVED: To suppress generation of particles accompanying retention of an implanting object. SOLUTION: A wafer holder 20 retaining a wafer 24 is structured of a wafer holder base 36, a wafer fixing part 38, holder pins 40, 42, a bearing, a housing and a coil spring. The wafer fixing part 38 is fixed at an outer peripheral side of the wafer holder base 36, and the holder pins 40, 42 are arranged at the wafer fixing part 38 to be faced to each other. The holder pin 40 is supported by the bearing in free rotation, and the holder pins 40, 42 are supported by the coil spring in free movement along a radius direction of the wafer holder base 36. In the process of holding a side surface of the wafer 24 by the holder pins 40, 42, holder pins 40, 42 are made rotated with a Z axis as a center, when a force from the wafer 24 acts on the holder pins 40, 42, to alleviate frictional force acting between the holder pin 40 and the wafer 24. COPYRIGHT: (C)2010,JPO&INPIT
    • 待解决的问题:抑制伴随植入物保留的颗粒的产生。 保存晶片24的晶片固定器20由晶片保持器基座36,晶片固定部38,保持器销40,42,轴承,壳体和螺旋弹簧构成。 晶片固定部分38固定在晶片保持器基座36的外周侧,并且保持器销40,42被布置在晶片固定部分38上以彼此面对。 保持销40由轴承自由旋转地支撑,保持销40,42由螺旋弹簧沿着晶片保持器基座36的半径方向自由移动地支撑。在保持销钉40的侧面的过程中, 当来自晶片24的力作用在保持器销40,42上时,保持销40,42的保持销40,42的晶片24以Z轴为中心旋转,以减轻作用于保持器销40,42之间的摩擦力 销40和晶片24.版权所有(C)2010,JPO&INPIT
    • 3. 发明专利
    • Probe sequence determination system for dna array
    • 用于DNA阵列的探针序列测定系统
    • JP2003052385A
    • 2003-02-25
    • JP2002111490
    • 2002-04-15
    • Hitachi Ltd株式会社日立製作所
    • TOMITA HIROYUKISAITO TOSHIRONARAHARA MASATOSHIKATO KOICHI
    • G01N33/48C12N15/09C12Q1/68
    • PROBLEM TO BE SOLVED: To realize a probe sequence without cross-hybridization, having an equalized Tm and slightly assuming a secondary structure in order to assure the assay accuracy and reproducibility as a probe sequence for a DNA array. SOLUTION: The probe sequence determination for the DNA array is carried out by passing the probe design flow through the following at least two steps. A step of preparing a probe candidate list for the DNA probe array composed of a partial sequence of the genome or a cDNA sequence (a listing step) and a step of excluding candidates having the melting temperature deviating from the predetermined range or high stability of the secondary structure or possibility of cross-hybridization (a filtering step). Thereby, a method for designing the sequence of the probe DNA immobilized on the DNA probe array is provided.
    • 要解决的问题:为了实现没有交叉杂交的探针序列,具有均衡的Tm并稍微假设二级结构,以确保作为DNA阵列的探针序列的测定精度和重现性。 解决方案:通过将探针设计流程通过以下至少两个步骤来进行DNA阵列的探针序列测定。 制备由基因组的部分序列或cDNA序列构成的DNA探针阵列的探针候选序列的步骤(列举步骤)和排除具有偏离预定范围或高稳定性的熔解温度的候选物的步骤 二级结构或交叉杂交的可能性(过滤步骤)。 因此,提供了设计固定在DNA探针阵列上的探针DNA序列的方法。
    • 5. 发明专利
    • ELETROCHEMILUMINESCENCE ANALYTICAL EQUIPMENT
    • JPH11352064A
    • 1999-12-24
    • JP16179698
    • 1998-06-10
    • HITACHI LTD
    • TOMITA HIROYUKIMIYAHARA YUJIKAJIYAMA TOMOHARUNINOMIYA TAKESHI
    • G01N33/536G01N21/76G01N33/543
    • PROBLEM TO BE SOLVED: To quickly measure a concentration change taking place in a relatively short time by a measurement method which does not include a sampling operation by observing as time passes from a moment when a voltage is impressed to a time, when an electric double layer is formed which a potential distribution formation in a solution is resolved with time and measured with the use of an emission reagent. SOLUTION: In using a three-electrode system, a working electrode 11, a counter electrode 12, a reference electrode 13 are set. An emission generated on the working electrode 11 passes a transparent part of a flow through cell 1 and enters a photodetecting camera 4. A minimum time interval, when an emission distribution change is detected by the photodetecting camera 4, is set not larger than 0.1 sec. A system holding a solution between two electrodes is electrostatically series system of a resistance R of the solution and a capacitor C between the electrodes and the solution, and a time before an electric double layer is formed equal to the charge time of the capacitor and nearly three times R×C. A sample the electrolyte concentration of which is to be measured is supplied from a feed port 14 to the cell 1 and discharged from a discharge port 15. The concentration is measured at an electrolyte concentration calculation part 53 of an image recognition part 5.
    • 6. 发明专利
    • NON-REACTIVE SUBSTANCE SEPARATING DEVICE
    • JPH11258237A
    • 1999-09-24
    • JP5642098
    • 1998-03-09
    • HITACHI LTD
    • SHIBA MASAKITOMITA HIROYUKIYASUDA KENJI
    • B01D57/00G01N33/543
    • PROBLEM TO BE SOLVED: To enable the effective separation of components in a short time in measurement using immunoassay method by performing the separation of nonreactive substances by adsorbing non-bonding substances in a solution. SOLUTION: The separation of non-reactive substances is performed by adsorbing non-bonding substances in a solution. In other words. the flow cell of a non-reactive substance separating device is formed by laminating two insulating electrode substrates 3 and 9 and a seal member 6. A working electrode 10 for performing electrochemical measurement and a removing electrode 11 for removing non-bonding substances in a reaction solution are fixed to the insulating electrode substrate 9. Non-reactive substances are removed from the reaction solution introduced into the flow cell by a magnet arranged immediately beneath the flow cell, and a voltage is applied on the reaction solution on the basis of a predetermined sequence present in the removing electrode 11. By this, it is possible to perform the effective electrical and chemical removal of non-binding substances in the reaction solution.
    • 7. 发明专利
    • REAGENT MIXING APPARATUS
    • JPH11223596A
    • 1999-08-17
    • JP2419698
    • 1998-02-05
    • HITACHI LTD
    • TOMITA HIROYUKIMIYAHARA YUJIKAJIYAMA TOMOHARU
    • G01N21/05
    • PROBLEM TO BE SOLVED: To eliminate the waste of the operation of an apparatus, to enhance the stability of the operation of the apparatus and to shorten the time required for one sample by a method wherein the inside diameter in a part of a sample flow passage is made thin and its thin part is branched so as to be coupled to a solution to be mixed. SOLUTION: The inside in a part of a sample flow passage is made thin, the thin part of the inside diameter is branched, and one end of a branched part is coupled to the storage container of a solution to be mixed, e.g. a cleaning liquid. The inside diameter is made thin so that the solution to be mixed is introduced into the sample flow passage by making use of Bernoulli's theorem. For example, when a sample solution 21 or a reaction reagent 22 is introduced into a flow cell 1, a solenoid valve 27 is opened, and a solenoid valve 29 is opened. In addition, when a liquid, to be measured, in a liquid-to-be-mixed reservoir 25 is introduced into the flow cell 1, the solenoid valve 27 is opened, a solenoid valve 28 is closed, and a flow passage to the liquid-to-be-mixed reservoir 25 is opened by the solenoid valve 29. In this manner, when the liquid to be mixed is introduced into a sample flow passage by making use of Bernouilli's theorem, an inessential operation can be reduced, and the stability of the operation of an apparatus is improved.
    • 8. 发明专利
    • ION-IMPLANTING DEVICE
    • JPH1064471A
    • 1998-03-06
    • JP21708596
    • 1996-08-19
    • HITACHI LTD
    • TOMITA HIROYUKIMERA KAZUOYAMASHITA YASUO
    • H01J37/20C23C14/48H01J37/317H01L21/265
    • PROBLEM TO BE SOLVED: To prevent the overheating of wafer, and set the wafer at a desirable temperature in an ion-implanting device for implanting an ion beam, which is taken out of an ion source into a wafer by providing a radiating material between a wafer and a wafer holder. SOLUTION: A wafer 330 is held at a surface thereof, in which the wafer 330 is irradiated with an ion beam, and a peripheral part of an opposite side surface thereof. A radiating material 329, made of the material with a radiation factor different from a wafer holder 320, desirably, made of Si is placed in a space between the wafer holder 320, of which central part is formed into a space and the wafer 330. Namely, as a radiating material 329, in the case where a material at a coefficient of heat absorption is higher than that of the wafer holder 320 is selected as a radiating material 329, since the radiation heat is absorbed by the radiating material 329, the wafer 330 can be set at a low temperature. The temperature of wafer can be freely set by forming a variable area type radiating material 329. Consequently, the breakdown of the crystal structure due to overheating of the wafer 330 is prevented.