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1. 发明专利

JPH0472621A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0472621A
公开(公告)日：1992-03-06
申请号：JP18391790
申请日：1990-07-13
申请人： HITACHI LTD
发明人： TAMAOKI MASUKAZU
IPC分类号： H01L21/302 , H01L21/28
摘要： PURPOSE:To prevent the reliability of a device from being reduced by a method wherein fluorine gas and hydrogen gas are mixed and introduced in a container or the gases are simply introduced in the container and the above natural oxide film is etched with those gases in the state of a high temperature and a high vacuum. CONSTITUTION:In the manufacturing process of a bipolar transistor, the impurity diffusion in a base region and the impurity diffusion in an emitter region are completed in an Si wafer and in a state that an emitter contact part and a base contact part are opened in a thermal oxide film on the surface of the wafer, a natural oxide film 11 is formed on the surfaces of the contact parts. In a state that the warfer is housed in a CVD device, the mixed gas of fluorine compound gas and hydrogen gas, such as NF3 + H2 gas, is introduced in the device through a gas introducing port and the film 11 is treated at a high temperature and in a high vacuum, whereby the natural oxide film is completely removed. After that, a polysilicon film 9 is deposited on the wafer surface, from which the natural oxide film is removed, by a CVD method.

2. 发明专利

JPH01262628A DEVICE FOR FORMING THIN-FILM 失效
公开(公告)号：JPH01262628A
公开(公告)日：1989-10-19
申请号：JP9234988
申请日：1988-04-14
申请人： HITACHI LTD
发明人： TAMAOKI MASUKAZU , KASAHARA OSAMU
IPC分类号： C23C14/56 , H01L21/205 , H01L21/31
摘要： PURPOSE:To prevent the formation of a natural oxide film on the surface of an article to be treated positively by surely removing air, etc., staying among the articles to be treated by an inert gas blown off from a gas feeder installed near an opening section in a treating chamber. CONSTITUTION:Articles to be carried 10 such as semiconductor wafers, on which aimed thin-films must be formed, are mounted to a carrier jig 9 on a carrier base 8. The carrier base 8 is lifted while an inert gas 12 is ejected from a plurality of blow-off holes 11a of a gas feeder 11, thus starting carrying-in to a treating chamber 1 of a plurality of the articles to be treated 10. The inert gas 12 is sprayed against the articles to be treated 10 passing through the feeder 11 from the whole circumference prior to the carrying-in to the inside, air staying in the clearances of the articles to be treated 10 held to the jig 9 is removed positively, and carrying-in to the treating chamber 1 together with the articles to be treated 10 is prevented. Accordingly, the formation of natural oxide films prior to the formation of aimed thin-films onto the surfaces of the articles to be treated 10 carried into the treating chamber 1 heated at a fixed temperature is surely obviated.

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