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    • 1. 发明专利
    • Magnetic recording medium and its production
    • 磁记录媒体及其制作
    • JP2000076638A
    • 2000-03-14
    • JP24023898
    • 1998-08-26
    • Hitachi LtdHitachi Maxell Ltd日立マクセル株式会社株式会社日立製作所
    • OGAWA YOICHIYANO AKIRAKITAGAKI NAOKISHIRAI HIROSHITAKAYAMA TAKANOBU
    • G11B5/66G11B5/64G11B5/65G11B5/84
    • PROBLEM TO BE SOLVED: To enable superior C/N characteristics by forming a metallic magnetic thin film comprising crystal grains of a specified grain diameter formed on a substrate so that the grain diameter of the crystal grains is increased as it goes from the substrate side of the thin film toward the outer surface side.
      SOLUTION: A metallic magnetic thin film 10 is formed from crystal grains of ≤20 nm average grain diameter so that the grain diameters of the Co crystal grains 11 and Co-O crystal grains 12 are stepwise increased as they go from the substrate side of the thin film 10 toward the outer surface side. The grain diameter is controlled and formed by adjusting the temperature of a can while optionally combining the intrusion of an inert gas as well. By increasing the grain diameter of the crystal grains near the outer surface of the thin film 10, the crystal magnetic anisotropy of the grains is enhanced and output is increased. Because of the small crystal grains on the substrate side, magnetic domains are made small, noise is reduced and a C-N ratio is increased. The tilt direction of the columnar crystal grains of a lower metallic magnetic layer 10a and an upper metallic magnetic thin film 10b may be changed.
      COPYRIGHT: (C)2000,JPO
    • 要解决的问题:为了通过形成包含在基板上形成的特定晶粒直径的金属磁性薄膜,使得晶粒的晶粒直径从基板侧的基板侧开始增加,从而实现优异的C / N特性 该薄膜朝向外表面侧。 解决方案:金属磁性薄膜10由<= 20nm平均粒径的晶粒形成,使得Co晶粒11和Co-O晶粒12的晶粒直径从基底侧逐渐增加 薄膜10朝向外表面侧。 通过调节罐的温度来控制和形成颗粒直径,同时可选地组合惰性气体的侵入。 通过增加薄膜10的外表面附近的晶粒的粒径,晶粒的晶体磁各向异性提高,输出增加。 由于基板侧的晶粒小,所以磁畴变小,噪声降低,C-N比增大。 可以改变下金属磁性层10a和上金属磁性薄膜10b的柱状晶粒的倾斜方向。
    • 6. 发明专利
    • Magnetic semiconductor material and optical isolator
    • 磁性半导体材料和光学隔离器
    • JPS61123814A
    • 1986-06-11
    • JP24444384
    • 1984-11-21
    • Hitachi Ltd
    • TAKAGI KAZUMASATAKAYAMA TAKANOBU
    • G02B27/28C22C30/00G02F1/09H01S5/00
    • PURPOSE: To obtain a superior isolator for practically useful laser light causing hardly interposition loss by using a specified Te alloy having the Faraday effect.
      CONSTITUTION: An isolator is made of an MnTe-HgTe-CdTe alloy as a magnetic semiconductor having the Faraday effect. It is preferable that the alloy has a composition in the range defined by six points, Mn
      0.1 Hg
      0.2 Cd
      0.7 Te, Mn
      0.1 Hg
      0.4 Cd
      0.5 Te, Mn
      0.3 Hg
      0.4 Cd
      0.3 Te, Mn
      0.4 Hg
      0.2 Cd
      0.4 Te, Mn
      0.4 Hg
      0.1 Cd
      0.5 Te and Mn
      0.3 Hg
      0.1 Cd
      0.7 Te in the MnTe-HgTe-CdTe ternary phase diagram. The magnetic semicon ductor is preferably formed by epitaxial growth on a substrate of a compound semiconductor consisting of group III and V elements such as an InP or GaAs crystal. Semiconductor laser and an optical isolator can be united to one body, and the reliability as optical parts can be increased. A superior isolator for practically useful laser light of 0.8W1.5μm wavelength is obtd.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:通过使用具有法拉第效应的特定Te合金,获得实际有用的激光的高级隔离器,从而几乎不会导致插入损耗。 构成:隔离器由MnTe-HgTe-CdTe合金制成,具有法拉第效应的磁性半导体。 优选的是,合金的组成范围为6点,Mn0.1Hg0.2Cd0.7Te,Mn0.1Hg0.4 Cd0.5Te,Mn0.3Hg0.4Cd0.3Te,Mn0.4Hg0.2Cd0.4Te, MnTe-HgTe-CdTe三元相图中Mn0.4Hg0.1Cd0.5Te和Mn0.3Hg0.1 Cd0.7Te。 磁半导体管优选通过在由III族和V族元素(例如InP或GaAs晶体)组成的化合物半导体的衬底上外延生长而形成。 半导体激光器和光隔离器可以结合到一体,并且可以增加作为光学部件的可靠性。 实用有效的0.8-1.5μm波长激光的隔离器是可以实现的。