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    • 3. 发明专利
    • GAS SHIELD ARC WELDING METHOD
    • JPS5671594A
    • 1981-06-15
    • JP14646579
    • 1979-11-14
    • HITACHI LTD
    • MIYAKE HIROSHISATOU AKIRASHIYOUJI MORITAKAOGURA SATOSHI
    • B23K9/16B23K9/00B23K9/028
    • PURPOSE:To weld two materials to be welded having concentric circles well without defects such as pinholes, by changing rotation of the electrode or materials to be welded from the positive direction to the inverse direction, in respect to circumferential face welding. CONSTITUTION:Welding is started with an arbitrary position on the welding line circumference as starting point 0 deg., and welding is performed in the same rotation direction till the welding start position. When the electrode or materials 1 and 2 to be welded reach point A, rotation of welding is inverted to change the welding direction, and welding is executed without stopping the arc. This arbitrary point A is determined by the arc time indicated by the ratio of the welding length of materials 1 and 2 to the welding speed. At arrival at this set value, the running truck is inverted, and the moving direction of a pair of electrodes for the torch is inverted to complete welding. By this method, the solidification speed of the fused metal becomes low, and gas shield arc welding without weld defects such as pinholes is possible.
    • 7. 发明专利
    • HIGHHFREQUENCY PULSE TIG WELDING METHOD
    • JPS56122671A
    • 1981-09-26
    • JP2662880
    • 1980-03-05
    • HITACHI LTD
    • SHIYOUJI MORITAKASHIDA TOMOHIKOUSUKI JIYUICHIROU
    • B23K9/16B23K9/073B23K9/09B23K9/167
    • PURPOSE:To perform high efficient and high-quality high-frequency pulse TIG welding especially on Al, by using the bar (-) current between the base metal and welding torch as the high-frequency pulse current and the bar (-) current as the single pulse current in which the single pulse at every plural number of pulse number in the above-mentioned pulse current is inverted. CONSTITUTION:In the welding current which is passed between welding base metal 6 composed especially of Al and welding torch 7 installed at the opposite side of base metal 6, bar minus current iSP is defined as a repeated high-frequency pulse current. On the other hand, bar plus current iRP is defined as the single pulse current in which one piece of pulse among 5-50 pieces pulse number of the above- mentioned high frequency pulse current is inverted, and thus the welding is performed. In this case, the current generated by constant-voltage regulated power supply 20 is transformed into a pulse by transistor bridge 21 and controlled as mentioned above. As the results of this, the bar minus current can perform a deep melting weldings of thick plate of Al as the high-frequency pulse current, and, on the other hand, a cleaning action can be performed by the inversion as mentioned above, and a high quality welding can be performed efficiently.
    • 8. 发明专利
    • TRANSISTOR DAMAGE DETETCOR
    • JPS5594165A
    • 1980-07-17
    • JP69679
    • 1979-01-10
    • HITACHI LTD
    • SHIYOUJI MORITAKASHIDA TOMOHIKOUSUKI JIYUICHIROUMARUMOTO KATSUJI
    • G01R31/02
    • PURPOSE:To simplify the construction of a switching transistor damage detector by judging the damage of the switching transistors connected in parallel for balancing currents on the basis of induced voltage change generated at any emitter resistor of the switching transistors. CONSTITUTION:A plurality of switching transistors 18,... are connected in parallel with a transistor switch 17 for balancing currents. The AC current amount to be supplied to a welder or the like is determined according to their selection. Any of LED 36-39 corresponding to the selected AC current amount irradiates a light by the induced voltage by the current flowing through the emitter resistor 19 of desired transistor 18 through a detecting circuit having arithmetic amplifiers 20-23 connected in parallel with the resistor 19. When the transistors 18 are damaged in this state, the increased induced voltage is detected via the resistor 19, and the LED 36-39 irradiate lights in response to the damaged transistors 18. Thus, the damage of the transistor can be detected with a simple construction that is connected not to the emitter resistors at every detecting circuit but in parallel to any emitter resistor.