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1. 发明专利

JPH0414512B2 失效
公开(公告)号：JPH0414512B2
公开(公告)日：1992-03-13
申请号：JP594282
申请日：1982-01-20
申请人： HITACHI LTD
发明人： KUGAYA TAKASHI , OKAYAMA TSUTOMU , SHIMAZOE MICHITAKA
IPC分类号： G01L9/04 , H01L29/84

2. 发明专利

JPS6093934A DETECTOR OF PRESSURE AND DIFFERENTIAL PRESSURE 失效
公开(公告)号：JPS6093934A
公开(公告)日：1985-05-25
申请号：JP20220983
申请日：1983-10-28
申请人： HITACHI LTD
发明人： SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA , YAMAMOTO YOSHIKI , OZAWA NOBORU
IPC分类号： G01L9/00 , G01L13/02
摘要： PURPOSE:To prevent changes in the zero point when one hand flange alone is heated or cooled by covering a diaphragm with flange covers better in the heat conductivity, which are thermally connected to flanges as opposed thereto. CONSTITUTION:Flange covers 11 and 12 are provided to protect flanges 1 and 2 from direct exposure to direct sunshine and a hot air. The flange cover 11 covering the side of the flange 1 is, for example, extended to the side of the flange 2 at the bottom thereof while lthe flange cover 12 covering the side of the flange 2 is, for example, extended to the side of the flange 1 at the bottom thereof. They are fixed to the flanges 1 and 2 with bolts 13 and 14 at the overlapped parts of the bottoms respectively. The flange covers 11 and 12 employ a metal plate better in the heat conductivity and with a small heat capacity and heat accumulated in the flange covers 11 and 12 is dispersed thoroughly and evenly transmitted to flanges 1 and 2 on both sides through bolts 13 and 14.

3. 发明专利

JPS5938745B2 JPS5938745B2 - 失效
公开(公告)号：JPS5938745B2
公开(公告)日：1984-09-19
申请号：JP7203477
申请日：1977-06-20
申请人： Hitachi Ltd
发明人： SHIMAZOE MICHITAKA , KOSUGI TETSUO , TAKAHASHI YUKIO , KURIHARA YASUTOSHI
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84 , H01L45/00

4. 发明专利

JPS5928070B2 JPS5928070B2 - 失效
公开(公告)号：JPS5928070B2
公开(公告)日：1984-07-10
申请号：JP8603077
申请日：1977-07-20
申请人： Hitachi Ltd
发明人： KURIHARA YASUTOSHI , SHIMAZOE MICHITAKA , KOSUGI TETSUO
IPC分类号： G01B7/16 , H01L29/84 , H01L45/00

5. 发明专利

JPS5983023A SEMICONDUCTOR PRESSURE DIFFERENCE DETECTOR 失效
公开(公告)号：JPS5983023A
公开(公告)日：1984-05-14
申请号：JP19245482
申请日：1982-11-04
申请人： HITACHI LTD
发明人： SHIMAZOE MICHITAKA , OKAYAMA TSUTOMU , MATSUOKA YOSHITAKA
IPC分类号： G01L9/04 , G01L9/00
摘要： PURPOSE:To make the relationship between pressure and output linear even at the measuring time for low pressure, by providing regions having different thicknesses in a strain yielding part, and forming strain sensitive elements on the thick strain yielding parts. CONSTITUTION:The diaphragm part of a semiconductor pressure difference detector comprises two stepped parts having different thicknesses, i.e., convex strain yielding parts 34 having a relatively thick size and diaphragm parts 36 having th thickness thinner than the part 34. The end parts of the convex strain yielding parts 34 are connected to a fixing part 30 and form a cross shape. Gage resistors 38 in a P shape are formed on the upper surfaces of the convex strain yielding parts 34 and take out full bridge outputs by pressure. In this constitution, the convex strain yielding parts 34 can yield large strain based on small forces, i.e., low pressures. Therefore, the relationship between the pressure and the output can be made linear even at the measuring time of the low pressure.

6. 发明专利

JPS5882137A PRESSURE DETECTOR 失效
公开(公告)号：JPS5882137A
公开(公告)日：1983-05-17
申请号：JP17974281
申请日：1981-11-11
申请人： HITACHI LTD
发明人： TAKAHASHI YUKIO , SHIMAZOE MICHITAKA
IPC分类号： G01L9/04 , G01L9/00
摘要： PURPOSE:To raise safety and reliability by forming a pressure receiving chamber by making anode-connection of the diaphragm made of a semiconductor single crystal at a pressure conversion section with a member that is provided with a fluid introduction hole with thermal expansion coefficient that is about the same as the diaphragm. CONSTITUTION:A pressure conversion section 11 consists of a single crystal diaphragm 12 that is provided with a strain sensitive section, an insulation film that is formed on the diaphragm 12 and a thin film strain gauge 14 that is fixed on the insulation film 13. The pressure conversion section 11 is stacked on a metallic supporting base 20 made of Kovar through a glass base 18 on which a fluid introduction hole 17 with thermal expansion coefficient that is about the same as that of the diaphragm 12 on the pressure conversion section 11. The pressure conversion section 11 and the metallic supporting base 20 are electrically firmly connected by anode-connection to form a pressure receiving chamber 21. With this arrangement organic materials that deteriorate characteristic can be eliminated and also the effects of the strain of the weldment of the gauge 14 and others can be avoided.

7. 发明专利

JPS5814751B2 失效
公开(公告)号：JPS5814751B2
公开(公告)日：1983-03-22
申请号：JP2967877
申请日：1977-03-17
申请人： HITACHI LTD
发明人： SHIMADA SATOSHI , TANABE MASANORI , NISHIHARA MOTOHISA , YAMADA KAZUJI , MATSUDA YASUMASA , SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA , TAKAHASHI YUKIO , KATOGI KATSUYA , AI MITSUO
IPC分类号： G01D5/16 , G01L1/18 , H01L29/84 , H01L45/00

8. 发明专利

JPS5750479A Detector for detecting pressure and pressure difference of semiconductor 失效
标题翻译：用于检测压力和压力差的半导体检测器
公开(公告)号：JPS5750479A
公开(公告)日：1982-03-24
申请号：JP12642780
申请日：1980-09-10
申请人： Hitachi Ltd
发明人： SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA , YASUKAWA AKIO
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
CPC分类号： H01L29/84
摘要： PURPOSE:To improve accuracy in measuring pressure, by a method wherein the thin part of a diaphragm formed by cutting a groove out of a substrate made of a semiconductor single crystal with its central and peripheral parts left untouched is provided with a strain sensitive region, while a second groove is cut into the central part thereof. CONSTITUTION:A cut groove 4 is made in a single crystal 1 such as Si excluding its central part 2 and peripheral part 3. A thin distorted part 5 is provided with a strain resistance element 6, while a second cut groove 7 is made in the central part, to form a thin part 8 and a thick portion 9. By so doing, because film stress caused by the transformation of the distorted part 5 is compensated with the elongation of the thin part 8, the non-linearity of the distortion against pressure is reduced and accuracy in measuring pressure can be improved.
摘要翻译：目的：为了提高测量压力的精度，通过以下方法提供了一种方法，其中通过将其中心和周边部分保持不变的由半导体单晶制成的基板切割出槽形成的隔膜的薄部分设置有应变敏感区域，而第二凹槽被切割成其中心部分。构成：在除了中心部分2和周边部分3之外的诸如Si的单晶1中制成切割槽4.薄变形部分5设置有应变电阻元件6，而第二切割槽7制成在中心部分，以形成薄的部分8和厚的部分9.通过这样做，由于由变形部分5的变形引起的薄膜应力由薄部分8的伸长率补偿，扭曲的非线性反对压力降低，可以提高测量压力的精度。

9. 发明专利

JPS56108276A SEMICONDUCTOR DIAPHRAGM TYPE SENSOR 失效
公开(公告)号：JPS56108276A
公开(公告)日：1981-08-27
申请号：JP1004980
申请日：1980-02-01
申请人： HITACHI LTD
发明人： TANABE MASANORI , SHIMADA SATOSHI , NISHIHARA MOTOHISA , YAMADA KAZUJI , YASUKAWA AKIO , SHIMAZOE MICHITAKA , MATSUOKA YOSHITAKA
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PURPOSE:To decrease the stress produced in the diaphragm and obtain excellent linearity in a semiconductor diaphragm type sensor by forming the monocrystalline Si diaphragm on which a plurality of piezo-resistor elements are attached, by a thick peripheral fixing portion and a thick central rigid portion surrounded therewith. CONSTITUTION:As the diaphragm 1 constituting the sensor, monocrystalline Si having (110) surface is used. A thick central rigid portion 31 is provided in the center, and a thick peripheral fixing portion is formed surrounding the central rigid portion 31 through a groove pointing to the lower surface. Thus, also the central portion of the diaphragm 1 is formed with a rigid portion. On the surface of the diaphragm 1, a plurality of piezo-resistor elements 5 are formed by diffusing P type impurities so as to be on axes and located at positions 52 and 54 on the fixing portion 3 and positions 51 and 53 on the rigid portion 31. Then, the diaphragm 1 is supported by a support 11 and surrounded by a case 10. Each element 5 is connected through a lead wire 7 to a terminal electrode 8 on a terminal strip 9 provided on the surface of the case 10, to form a bridge circuit.

10. 发明专利

JPS55143028A FABRICATING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS55143028A
公开(公告)日：1980-11-08
申请号：JP5035379
申请日：1979-04-25
申请人： HITACHI LTD
发明人： TAKAHASHI YUKIO , SHIMAZOE MICHITAKA
IPC分类号： H01L21/223
摘要： PURPOSE:To accurately form the impurity density in a semiconductor wafer by coating the impurity layer on one surface of the wafer when diffusing the impurity in the wafer, vacuum sealing it in a capsule, heat treating it and diffusing the impurity layer on the surface to be diffused of the other surface. CONSTITUTION:An SiO2 film 4 is coated on one surface 2 of a silicon wafer 1 to be diffused, and an impurity layer 5 to become a diffusing source is diffused on the other surface thereof according to an ordinary method. Then, a desired pattern is formed on a part of a film 4 by a photoetching process, a plurality of such wafers 1 are stood at an interval on a quartz boat 7 and contained in a quartz capsule 6. Thereafter, the capsule 6 is evacuated to a vacuum of 10 Torr or higher and heat treated at 1,000-1,200 deg.C to diffuse the impurity in the layer 5 to the surface 2 to be diffused to provide a predetermined diffused region thereon. Thus, the impurity density of the diffused region becomes accurate to be adapted for diffused resistor of a strain gauge or the like.

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