专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH06275413A MANUFACTURE OF THIN FILM RESISTOR 失效
公开(公告)号：JPH06275413A
公开(公告)日：1994-09-30
申请号：JP5903493
申请日：1993-03-18
申请人： HITACHI LTD
发明人： KAWAI AKINARI , KAWAHITO MICHIYOSHI , TATEISHI HIDEKI
IPC分类号： H01C7/00 , H01C17/12
摘要： PURPOSE:To obtain a title resistor having a desired resistance value by a simple working method by estimating a variation rate in resistance value of this resistor with a heat treatment temperature and by deciding an electrode shape on the basis of the estimated rate. CONSTITUTION:A preliminary heat treatment is made (step 103). A probe 5 is brought into contact with a resistance value measuring pattern formed by step 102 to measure a resistance value of a CRSiO2 resistor film 2 by a measuring instrument 6 (step 104). A stabilization heat treatment temperature which turns into a predetermined resistance at the time of completion is decided from this measured value and this variation rate in resistance. Al patterns for resistance electrode use are formed in respective thin film resistor elements (step 105). A heat treatment is made from results of step 104 as a stabilization heat treatment (step 106). This can provide a thin film resistor of a target resistance value. Therefore, a tin film resistor having a desired resistance value can be obtained by a simple working method without the need of a residual gas measuring apparatus or a laser generator.

2. 发明专利

JPH06124810A THIN-FILM RESISTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH06124810A
公开(公告)日：1994-05-06
申请号：JP27140992
申请日：1992-10-09
申请人： HITACHI LTD
发明人： TATEISHI HIDEKI , KAWAI AKINARI , KAWAHITO MICHIYOSHI , KENMOCHI AKIHIRO
IPC分类号： H01C7/00 , H01C17/22
摘要： PURPOSE:To shorten the manufacturing process and eliminate the variance of resistance value of a resistance element by measuring the resistance value of a thin-film resistance layer before removing a resist for pattern formation and determining an appropriate pattern size of a conductive layer depending on its measured results. CONSTITUTION:A probe 8 is penetrated through a resist 6 and is brought into contact with a measuring pattern 7 to measure the sheet resistance of a thin-film resistance layer 3 with a measuring device 9. According to the size based on the measured resistance value, light-exposure and developing are performed followed by etching of the conductive layer and the distance between both electrodes is appropriately determined while the size of the electrodes 11 and 12. Thus, the number of processes for forming the thin-film resistor can be reduced by one, that is, conventional three processes can be reduced to two processes, resulting in shortening the manufacturing process.

3. 发明专利

JPH01184276A METHOD AND DEVICE FOR SPUTTERING 失效
公开(公告)号：JPH01184276A
公开(公告)日：1989-07-21
申请号：JP830588
申请日：1988-01-20
申请人： HITACHI LTD
发明人： KOBAYASHI HIDE , SAKATA MASAO , SHIMAMURA HIDEAKI , KAWAHITO MICHIYOSHI , FUJITA MASAHIRO , YONEOKA YUJI , KAMEI TSUNEAKI
IPC分类号： C23C14/34
摘要： PURPOSE:To assure a large bias sputtering effect while decreasing the electrical input to a filter by giving directivity to a flying direction by filter to sputtering particles and imparting a substrate bias intermittently to a substrate. CONSTITUTION:A negative voltage is impressed by a DC substrate bias power supply 7 to a substrate electrode 5. A pulse power supply 12 is connected to the DC bias power supply 7 and the mutual voltages are superposed and are impressed to the substrate electrode 5. A filter power supply 13 impressed electric power via a matching box to a filter 3. The sputtering particles are released by impressing a high voltage to a sputtering power supply 1. The directivity of the flying direction of the sputtering particles is given by utilizing the cylindrical shape of the filter 3. Large substrate inflow current is obtd. when a PO cathode discharge is generated in said cylinder and a negative voltage is impressed to the substrate electrode 5. The sputtered film having a good throwing power is thus formed.

4. 发明专利

JPH01135042A MANUFACTURE OF SEMICONDUCTOR 失效
公开(公告)号：JPH01135042A
公开(公告)日：1989-05-26
申请号：JP29206887
申请日：1987-11-20
申请人： HITACHI LTD
发明人： KAWAHITO MICHIYOSHI , SHIMAMURA HIDEAKI , SAKATA MASAO , KAMEI TSUNEAKI
IPC分类号： H01L21/3205
摘要： PURPOSE:To increase the extent of a coverage by a fine through-hole without any element loss and Ar occlusion by a film by removing, using a method of formation of the thin film wherein Al particles incident at a large angle upon a substrate are reduced to the utmost, an Al film formed of a flat part by etching, and then forming uniformly Al films over the flat part and over the through-hole part. CONSTITUTION:A film of a small incident angle beta onto a substrate 2 is formed under a high vacuum condition higher than 1X10 Toor. That is, by reducing the amount of gas present between an evaporation source and the substrate 2, the probability of collision of an evaporation substance to the gas is reduced to the utmost to keep the substance going straight on. Additionally, by using as the evaporation source a crucible being substantially a point source and a tungsten board, etc., the incident angle beta onto the substrate 2 is limited to be more reduced. Furthermore, a resist film for use in the removal of the Al on the flat part has already been employed in a previous photoetching process of an interlayer insulating film 3, thus not increasing any other resist process. Still more, the resist film has been accurately positioned, thereby assuring the formation of an Al burried film.

5. 发明专利

JPS63293161A STRUCTURAL BODY OF TARGET 失效
公开(公告)号：JPS63293161A
公开(公告)日：1988-11-30
申请号：JP12815487
申请日：1987-05-27
申请人： HITACHI LTD
发明人： SHIMAMURA HIDEAKI , KAWAHITO MICHIYOSHI , SAKATA MASAO , KOBAYASHI HIDE , KAMEI TSUNEAKI
IPC分类号： C23C14/34
摘要： PURPOSE:To apply directivity to sputtered film particles so that films having high reliability are formed in recesses by working groove parts to the consuming region of a target and mounting a suppressor electrode via a specific spacing on the reference pane of the target. CONSTITUTION:The concentrical grooves 101 as recesses are worked to the surface having the consuming region of the target 1 and the direction of the sputtered film particles flying from the base of the grooves 101 are limited by side walls 104 of the grooves 101. The suppressor electrode 102 is disposed to the reference plane 103 of the target via the spacing which is determined by a potential difference between the electrode 102 and the target surface and the pressure of an inert gas and at which sputtering does not arise. The plasma in the sputtered films is thereby restrained in the grooves 101 and the sputtering arises at the higher density than on the reference plane of the target. The good formation of the films in the microrecesses is thereby enabled and the film formation with the good step covering characteristic is enabled.

6. 发明专利

JPS5989769A PLANAR MAGNETRON TYPE SPUTTERING ELECTRODE 失效
公开(公告)号：JPS5989769A
公开(公告)日：1984-05-24
申请号：JP19894382
申请日：1982-11-15
申请人： HITACHI LTD
发明人： NARIZUKA YASUNORI , KOBAYASHI HIDE , KAWAHITO MICHIYOSHI
IPC分类号： C23C14/36 , C23C14/35 , H01J37/34
摘要： PURPOSE:To improve the utilizing efficiency of a target material by forming a cusp magnetic field on the target to confine the atom necessary for sputtering so that almost the whole surface of the target can be sputtered. CONSTITUTION:A sputtering electrode is constituted by using a target 5, a backing plate 7, a back plate 8 and a magnet 6 as main constituting elements. The magnet 6 is disposed around the target 5 so that the side facing to the target 5 has the same polarity and that the magnetic fields facing to each other on the target 5 are reversed from each other, thereby forming a cusp magnetic field. The magnet 6 for forming the cusp magnetic field may be a permanent magnet or electromagnet. Then high speed sputtering arises on almost the whole surface of the target 5 and the fairly wide part of the material of the target 5 can be effectively used.

7. 发明专利

JPS5867476A THIN FILM MULTI-LAYER WIRING CIRCUIT FOR THERMAL HEAD 失效
公开(公告)号：JPS5867476A
公开(公告)日：1983-04-22
申请号：JP16576181
申请日：1981-10-19
申请人： HITACHI LTD
发明人： YABUSHITA AKIRA , MITANI MASAO , KAWAHITO MICHIYOSHI
IPC分类号： H05K3/46 , B41J2/345 , H01L49/00 , H01L49/02
摘要： PURPOSE:To raise the yield of manufacturing a multi-layer wiring circuit by a method in which in making a block division sequential driving method, the number of scanning signal lines is divided into blocks, and each block divided is orderly driven in the order of each block. CONSTITUTION:A practical example of (128 lines)X(2 division)X(8 blocks) is given in Fig. Signal terminal 42 is divided into 128 lines Si-Sn and S'1-S'n (n=128) for left and right sides, heating elements of 128 dots are housed in one block of common terminal 41, and the block number becomes terminal 41, and the block number becomes 8-block terminals. In short, 128 lines of a matrix multi-layer wiring circuit 43 is made up, having a region in which image elements (128mm.) of half B4-size can be treated by the signal line of 128 lines. The region l1 where the wiring of the second layer is formed in this case becomes 1/2 of the conventional ratio, in case where it has the same dimension as in the conventional method, and also the occupying area of the region at which the first and second wiring lines are crossed becomes 1/2 of the conventional ratio.

8. 发明专利

JPS57144770A MANUFACTURE OF THERMAL PRINT HEAD 失效
公开(公告)号：JPS57144770A
公开(公告)日：1982-09-07
申请号：JP2996581
申请日：1981-03-04
申请人： HITACHI LTD
发明人： YABUSHITA AKIRA , KAWAHITO MICHIYOSHI
IPC分类号： B41J2/335
摘要： PURPOSE:To improve the efficiency and life of recording by a method wherein a heating resistor layer is provided on the upper part of a wiring conductive layer which heating resistor zone is changed by anodic oxidation processing into a non-conductor and then a protective layer is provided. CONSTITUTION:An undercoat film 7 is laminated on a glazed ceramic base 6 in order to protect the base from erosion by etching liquid and, besides, a wiring conductive layer 9 is laminated and provided by Al-vacuum deposition method. And, this Al conductive layer is pattern-formed by photoetching in the form of a thermal print head. Thereafter, a zone wherein the heating resistor 1 is formed is patterned by a photoresist 13 so that the zone only may be exposed. A non-conductive layer 14 is formed on this exposed zone only by the anodic oxidation processing, then, after the photoresist film 13 is separated the heating resistor layer 8 is provided so that it may be stacked on the peripheral conductive layer 9 and finally a protectve layer 10 is formed to complete the head.

9. 发明专利

JPS53142063A HIGH VOLTAGE DISCHARGE LAMP 失效
公开(公告)号：JPS53142063A
公开(公告)日：1978-12-11
申请号：JP5638177
申请日：1977-05-18
申请人： HITACHI LTD
发明人： KAWAHITO MICHIYOSHI
IPC分类号： H01J61/06 , H01J61/073
摘要： PURPOSE:To largely reduce the fire starting voltage of a discharge lamp without producing a BaWO4 having special peak in an X-ray diffraction pattern in electrode material when using a material containing Ba as the electrode material of a tangsten electrode.

10. 发明专利

JPS62250171A FILM FORMING METHOD 失效
公开(公告)号：JPS62250171A
公开(公告)日：1987-10-31
申请号：JP9207086
申请日：1986-04-23
申请人： HITACHI LTD
发明人： SAKATA MASAO , SHIMAMURA HIDEAKI , KAWAHITO MICHIYOSHI , KOBAYASHI HIDE , KAMEI TSUNEAKI
IPC分类号： C23C14/34
摘要： PURPOSE:To form a film having the shape corresponding to an underlying shape of a substrate having through-holes on the substrate by disposing a parallel cross-shaped shielding plate between the substrate and target at the time of forming the film by sputtering on the substrate. CONSTITUTION:Sputtering particles are released in the form of the distribution of the law of cosines to all directions at the time of forming the film, by sputtering, of the material of a target 40 onto the substrate 10 having the through-holes 11 in a sputtering film forming device. An overhang shape is generated at the aperture end of the through-holes 11 particularly when vertical holes exist on the target 40 surface. The amt. of the film to be formed on the side wall 13 and bottom side 1 of the through-holes is then considerably decreased and defective states such as increased resistance value, and disconnection are resulted if the substrate 10 is a semiconductor. The parallel cross-shaped shielding plate 130 is disposed between the target 40 and the substrate 10 to control the quantity of the incident sputtering particles on the inside of the through-holes 11 in order to prevent such defects. The film having the shape conforming to the shape of the underlying substrate having the through-holes is thus formed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式