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    • 3. 发明专利
    • MEASURING METHOD AND APPARATUS OF SUPERHIGH VACUUM
    • JPH042937A
    • 1992-01-07
    • JP10314590
    • 1990-04-20
    • HITACHI LTD
    • OGUCHI YUKONISHIKAWA OSAMUISHIKAWA YUICHIYOSHIMURA TOSHIHIKO
    • G01L21/00
    • PURPOSE:To measure the degree of vacuum and gas partial pressure of extremely high vacuum by directly measuring the change of a field radiation current caused by the gas adsorption to the surface of a multichip. CONSTITUTION:A grid 2 is insulated from a multichip 1. A field radiation is brought about by impressing a direct current high voltage to the multichip 1. At this time, while the voltage is maintained constant, the change with time of the field radiation current running in the grid 2 is measured by an ammeter 3. After heating at high temperatures, a gas is adsorbed to the surface of the chip as time goes by, and the field radiation current is changed. The change of the field radiation current is dependent on the kind of the surface of the chip and adsorption gas and the adsorption of the gas. Therefore, since the residual gas in the vacuum is adsorbed with time after the chip is heated at high temperatures to clean the surface thereof, the work relation of the surface of the chip is increased and the field radiation current is decreased gradually. The entering frequency of the gas molecules and the degree of vacuum can be determined from the decreasing ratio of the field radiation current.
    • 6. 发明专利
    • METHOD OF FORMING HIGH TEMPERATURE SUPERCONDUCTIVE THIN FILM
    • JPH01158784A
    • 1989-06-21
    • JP31627787
    • 1987-12-16
    • HITACHI LTD
    • OGUCHI YUKOISHIKAWA YUICHI
    • C01B13/14C01G1/00C01G3/00H01B13/00H01L39/24
    • PURPOSE:To eliminate reaction products produced at a boundary due to diffusion of foreign substances from a substrate by a method wherein elements constituting superconductor are employed as a substrate materials, and products themselves, produced by a reaction on the substrate because of a thermal treatment, are used as superconducting materials. CONSTITUTION:When a thin film of three-element system oxide superconductor of barium(Ba), yttrium(Y) and copper(Cu) is formed, for instance, Ba and Y are successively deposited on a Cu substrate, and then oxygen 7 is introduced and a thermal treatment is performed. A CuO2 layer 9 with a thickness about 100Angstrom is accordingly formed under a YB2Cu3O6.8 superconductive thin film 10. Ba and Y are deposited simultaneously on the Cu substrate and the same thermal treatment in oxygen gas is performed. Ba and Y are successively or simultaneously deposited on the CuO or CuO2 substrate and the thermal treatment is performed. Cu and Ba are successively or simultaneously deposited on substrate Y2O3 and the same thermal treatment is performed. The above mentioned deposition is performed in oxygen while a substrate is heated.
    • 7. 发明专利
    • METHOD AND DEVICE FOR MEASURING EXTREMELY HIGH VACUUM
    • JPH0311542A
    • 1991-01-18
    • JP14296089
    • 1989-06-07
    • HITACHI LTD
    • OGUCHI YUKOISHIKAWA YUICHI
    • H01J41/02
    • PURPOSE:To measure pressure distribution inside a pressure container by introducing ions, or molecules, or atoms into a vacuum vessel, and irradiating them with a laser beam and producing a particle cluster by means of laser cooling, and detecting fluorescence generated when gas particles contained in the vacuum vessel collide with the cluster. CONSTITUTION:Although laser 2a and 2b are enough for stopping an ion beam 61 implanted diagonally downwardly from a vacuum vessel 1, a laser 2c may be provided against the laser 2a and acted upon by the difference of forces by the laser 2a and 2b. The ion beam thus provided with forces gradually slows down and finally stops to form an ion cluster 5. When cooling particles 5 collide with gas particles, the degree of vacuum of which is to be measured, then the cooling particles are excited and emit fluorescence. A detector 3 is used for detecting the strength of the fluorescence. Because the number of gas particles plunged into the above ion cluster is in inverse proportion to the degree of vacuum, the degree of vacuum can be calculated according to the strength of the fluorescence.