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1. 发明专利

JP2015015345A 半導体回路および電力変換回路审中-公开
标题翻译：半导体电路和功率转换电路
公开(公告)号：JP2015015345A
公开(公告)日：2015-01-22
申请号：JP2013140715
申请日：2013-07-04
申请人：株式会社日立製作所 , Hitachi Ltd
发明人： OGAWA TAKASHI , KATO KAORU
IPC分类号： H01L21/822 , H01L27/04 , H02M1/08
摘要：【課題】インバータ回路やコンバータ回路などの電力変換回路における、還流電流による導通損失を低減する回路を提供することを目的とする。【解決手段】回路は、第1のスイッチング素子と第2のスイッチング素子と整流素子を並列接続する。第1の端子から第2の端子に順方向電流を流すときは第1のスイッチング素子と第2のスイッチング素子をともにオンする。第2の端子から第1の端子に逆方向電流を流すときは第1のスイッチング素子をオフする。低負荷時に逆方向電流を流すときは低順方向電圧の整流素子(第2のスイッチング素子)に通流し、高負荷時に逆方向電流を流すときは低オン抵抗の整流素子に通流するようにされる。【選択図】図7
摘要翻译：要解决的问题：提供一种电路，其减少诸如逆变器电路和转换器电路的功率转换电路中的回流电流导致的导通损耗。解决方案：电路包括第一开关元件的并联连接，第二开关元件和整流元件。当正向电流从第一端子传递到第二端子时，第一开关元件和第二开关元件都被接通。当反向电流从第二端子传递到第一端子时，第一开关元件被断开。当在低负载时通过反向电流时，进行低正压整流器元件（第二开关元件），并且当在高负载时通过反向电流时，低导通电阻整流器元素进行。

2. 发明专利

JPH10209908A RADIO MODULE AND INFORMATION PROCESSOR PROVIDED WITH THE SAME 失效
公开(公告)号：JPH10209908A
公开(公告)日：1998-08-07
申请号：JP830897
申请日：1997-01-21
申请人： HITACHI LTD
发明人： NAGAISHI HIDEYUKI , OGAWA TAKASHI , OKA KORENORI
IPC分类号： H04B1/40
摘要： PROBLEM TO BE SOLVED: To use a directional antenna in a free movable way by forming an IF circuit, an RF circuit and an antenna on a hard substrate and adding the balanced strip transmission lines formed on a dielectric substrate including a thinned dielectric layer to at least both IF and RF circuits. SOLUTION: An antenna 3 uses a plane antenna which is weighted to a conductor pattern having a directivity of several to several ten degrees on the antenna surface. When a signal is transmitted from a radio terminal, the signal received from a function block 2 undergoes various types of processing necessary for transmission/reception via a base band circuit 6 and then are transmitted to an IF circuit 5. The circuit 5 converts the base band signal into an IF signal. The signal heightened up to the intermediate frequency is transmitted to an RF circuit 4 via a movable connector 8 and turned into an RF signal. The signal heightened up to the carrier frequency is transmitted to the antenna 3 and then radiated. The connector 8, the circuit 4 and the antenna 3 are connected to each other via a microstrip line.

3. 发明专利

JPH0694870A FUEL ASSEMBLY OF FAST BREEDER REACTOR 失效
公开(公告)号：JPH0694870A
公开(公告)日：1994-04-08
申请号：JP24166992
申请日：1992-09-10
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： OGAWA TAKASHI , TANNO MASAKATSU , TOKI MOTOMU
IPC分类号： G21C3/328
摘要： PURPOSE:To extend the service life of a fuel assembly and to improve the ecconomy of the fuel. CONSTITUTION:The inner diameter and the outer diameter of a covered pipe 5 forming the lower space 4 of a fuel element 1 which is provided at the center in the lateral direction of a fuel assembly 10 are made larger than the diameter of the covered pipe 5 at the position fuel pellets 6 are filled, and the inner diameter and the outer diameter of the covered pipe 5 forming the lower space 4 of a fuel element 2 provided at the outermost peripheries in the lateral direction is made smaller than the diameter of the covered pipe 5 at the position the fuel pellets 6 are filled.

4. 发明专利

JPH05209286A IRON ELECTROLYTIC CELL 失效
公开(公告)号：JPH05209286A
公开(公告)日：1993-08-20
申请号：JP1470692
申请日：1992-01-30
申请人： HITACHI LTD , HITACHI ENG SERVICE
发明人： OGAWA TAKASHI , HASEGAWA TAKERU
IPC分类号： C02F5/00 , C23F15/00 , C25B9/00
摘要： PURPOSE:To stabilize the flow pattern of an inner fluid in a cell and to prevent the sticking of sea water scale by arranging two flow reducer pipes parallel to an inflow pipe and by arranging a baffle plate having conical shaped cross section in a lower discharging chamber. CONSTITUTION:The two flow pipes 15a, 15b arranged facing each other in the direction vertical to an iron electrode plate is attached in an inflow chamber 14 provided on the upper part of a cylindrical iron electrolytic cell 10. Sea water fed to the inflow chamber 14 through the feed pipes 15a, 15b and dashed against each other to make eddy current is straightened in a approaching part of an electrode guide 18 and flows between the electrodes of the iron electrode plates. The two flow reducer pipes 19a, 19b are attached parallel to the inflow pipes 15a, 15b, the baffle plate 21 having conical shaped cross section is provided in the lower discharging chamber 20 so as to make a projecting piece face above, to be directly below an anode 11 and to extend in parallel to the anode 11 and the flow between each of electrodes is uniformalized and the discharging becomes smooth.

5. 发明专利

JPS6088388A METHOD OF OPERATING NUCLEAR REACTOR 失效
公开(公告)号：JPS6088388A
公开(公告)日：1985-05-18
申请号：JP19582283
申请日：1983-10-19
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： MARU AKIRA , SAITOU SOUZOU , OGAWA TAKASHI , TOKUNAGA KENSUKE
IPC分类号： G21C7/00

6. 发明专利

JPS59211892A Fuel spacer 失效
公开(公告)号：JPS59211892A
公开(公告)日：1984-11-30
申请号：JP8585283
申请日：1983-05-18
申请人： Hitachi Ltd , Hitachi Eng Co Ltd
发明人： OGAWA TAKASHI , SAKURAI MIKIO
IPC分类号： G21C3/344 , G21C3/34
CPC分类号： Y02E30/40

7. 发明专利

JP2013085409A Semiconductor switching circuit and semiconductor module using the same, and power conversion module 有权
标题翻译：使用相同的半导体开关电路和半导体模块和电源转换模块
公开(公告)号：JP2013085409A
公开(公告)日：2013-05-09
申请号：JP2011224553
申请日：2011-10-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OGAWA TAKASHI , AKIYAMA SATORU
IPC分类号： H02M1/08 , H02M7/537
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor switching circuit which surely turns on/off a switching element at high speed with low gate power consumption, and to provide a semiconductor module using the same and a power conversion module.SOLUTION: Switching circuits 20 and 21 having switching elements 1 and 11 include: capacitor resistor parallel connection circuits 3 and 13 for capacitors 4 and 14 and resistors 5 and 15; diode series connection circuits 7 and 17; and diode series parallel connection circuits 6 and 16 having diodes 8 and 18 connected in parallel with the diode series connection circuits in an opposite direction to the diodes of the diode series connection circuits, one end of the capacitor resistor parallel connection circuits 3 and 13 is connected to the gate terminal of the switching elements 1 and 11, and the diode series parallel connection circuits 6 and 16 are connected between the other end of the capacitor resistor parallel connection circuits and the output terminal of a gate driving circuit 9, with the anode terminal of the diodes of the diode series connection circuits 7 and 17 as the gate driving circuit 9 side, and the cathode terminal thereof as the gate terminal side of the switching elements 1 and 11.
摘要翻译：要解决的问题：提供一种半导体开关电路，其以低栅极功率消耗高速确定开关元件，并提供使用该开关元件的半导体模块和电力转换模块。解决方案：具有开关元件1和11的开关电路20和21包括：用于电容器4和14以及电阻器5和15的电容器电阻并联电路3和13; 二极管串联电路7和17; 和二极管串并联电路6和16，其二极管8和18与二极管串联连接电路并联连接，与二极管串联连接电路的二极管相反，电容电阻并联电路3和13的一端为连接到开关元件1和11的栅极端子，并且二极管串联并联电路6和16连接在电容器电阻并联电路的另一端和栅极驱动电路9的输出端子之间，阳极作为栅极驱动电路9侧的二极管串联连接电路7和17的二极管的端子和作为开关元件1和11的栅极端子侧的阴极端子。（C）2013，JPO＆INPIT

8. 发明专利

JP2001345419A INTEGRATED HIGH-FREQUENCY RADIO CIRCUIT MODULE 失效
公开(公告)号：JP2001345419A
公开(公告)日：2001-12-14
申请号：JP2000166447
申请日：2000-05-31
申请人： HITACHI LTD
发明人： OKA IREI , OGAWA TAKASHI
IPC分类号： H05K3/46 , H01L25/10 , H01L25/18 , H01Q13/08 , H04B1/04 , H04B1/38 , H04B1/3822
摘要： PROBLEM TO BE SOLVED: To provide a low-cost integrated radio circuit module that can integrate an antenna and a radio circuit by a multilayer substrate using a conventional wiring substrate formation process, and is compact and light, and has less interference. SOLUTION: In a radio circuit where a local oscillation and one-package transmission/reception are assembled onto a multilayer wiring board, wiring in the one-package transmission/reception is multilayered, and the order of the array of a group of terminals being arranged at the package outer periphery of the transmission/reception is optimized to an order where wiring patterns on the multilayer wiring board that are connected to them cannot cross one another.

9. 发明专利

JP2001069016A FREQUENCY MULTIPLYING CIRCUIT AND RADIO COMMUNICATION EQUIPMENT USING IT 失效
公开(公告)号：JP2001069016A
公开(公告)日：2001-03-16
申请号：JP24111899
申请日：1999-08-27
申请人： HITACHI LTD
发明人： OGAWA TAKASHI , OKA TSUNANORI
IPC分类号： H04L27/227 , H03B19/14 , H04B1/04 , H04B1/26
摘要： PROBLEM TO BE SOLVED: To prevent occurrence of an unnecessary wave and abnormal oscillation in a frequency conversion section in the case of realizing radio communication where carrier frequencies have a relating of 1:2 with a radio communication equipment having a single local oscillation circuit. SOLUTION: The frequency multiplying circuit configuring a frequency conversion section is provided with an input section 37 of an oscillation signal from a local oscillation circuit, an amplifier element 40 whose linear/nonlinear operation is selected by a control signal 54 to amplify an oscillation signal, and an output circuit where switches 41, 48 connect/disconnect filter circuits 42, 50 blocking a prescribed multiplied wave to/from an output of the amplifier element 40 so as to selectively output a fundamental wave and multiplied waves to an output terminal 53 of a mixer. Since the amplifier element 40 that makes linear or nonlinear operation and the output circuit whose frequency pass characteristic can be changed are connected in series, production of an unnecessary wave and abnormal oscillation can be prevented.

10. 发明专利

JPH08153850A THIN RESISTANCE FILM AND INTEGRATED CIRCUIT USING THAT 失效
公开(公告)号：JPH08153850A
公开(公告)日：1996-06-11
申请号：JP29620694
申请日：1994-11-30
申请人： HITACHI LTD
发明人： KOMINAMI SHINYA , MITA REEKO , OGAWA TAKASHI
IPC分类号： H01L27/04 , H01L21/822
摘要： PURPOSE: To make it possible to realize two or more kinds of resistivities on one sheet of a thin resistance film by a method wherein the number of crystal grain boundaries in the vertical and horizontal directions in the XY planes of the thin film is changed and an anisotropy is given to the resistivity in the plane of the thin film. CONSTITUTION: A silicon dioxide film 2 is deposited on a silicon substrate 1 by a high-frequency magnetron sputtering method using argon gas and thereafter, a molybdenum thin film is deposited by a DC magnetron sputtering method and a thin resistance film 3 is formed. In this case, a rectangular molybdenum plate 5-cm wide and 30-cm long is used as a sputtering target and the substrate 1 is put directly over the center of the target. Thereby, the form of the surface of the film 3 becomes such one that two-dimensionally slender crystal grains are mainly extended in the X-axis direction of the film 3 and an anisotropy can be given to the resistivity in the plane of the film 3. Accordingly, two kinds or more of resistivities can be realized in one sheet of the film 3 and it becomes possible that the area of the whole resistor of an integrated circuit is reduced.

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