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1. 发明专利

JP2003345834A Method of preparing assembly drawing, implementing apparatus therefor and processing program therefor 审中-公开
标题翻译：制作装配图，实施装置及其处理程序的方法
公开(公告)号：JP2003345834A
公开(公告)日：2003-12-05
申请号：JP2002150056
申请日：2002-05-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAKAHARA HITOSHI , YOSHIDA MASAHITO , SOEDA TAKAYOSHI
IPC分类号： G06F17/50
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of improving the efficiency of assembly drawing preparation operation for preparing an assembly drawing from three- dimensional model data.
SOLUTION: A method of preparing assembly drawing from the three- dimensional model data includes the steps of: preparing a disassembly drawing in which components are separated by referring to indicated three-dimensional model data; converting components and features whose sizes measured on the disassembly drawing are smaller than specified values to an exaggerated display; and arranging the converted figures on the disassembly drawing.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种能够提高从三维模型数据准备组装图的组装拉拔准备操作的效率的技术。解决方案：从三维模型数据准备组装图的方法包括以下步骤：准备通过参考所指示的三维模型数据分离组件的拆卸图; 将在拆卸图上测量的尺寸的部件和特征转换为小于指定值到夸张的显示; 并将转换的图形布置在拆卸图上。版权所有（C）2004，JPO

2. 发明专利

JPH1116836A METHOD AND APPARATUS FOR CRYSTALLIZATION 失效
公开(公告)号：JPH1116836A
公开(公告)日：1999-01-22
申请号：JP16992497
申请日：1997-06-26
申请人： HITACHI LTD
发明人： NAKAHARA HITOSHI , AKIMOTO HAJIME , HATANO MUTSUKO
IPC分类号： H01L21/20 , H01L21/02 , H01L21/268 , H01L21/336 , H01L27/12 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To easily obtain a polycrystalline silicon thin film of a large grain size, by performing one-pulse laser irradiation so that the smaller width of a region on a substrate to be irradiated with pulse laser becomes a specific value or below, and then performing one-pulse laser irradiation so that the smaller width of other regions becomes a specific value or below. SOLUTION: First, a laser beam with the width equal to or below a mean nucleus production interval L is irradiated 79. That is, if w is 1 μm or below, only one nucleus can be grown with priority given to it by applying pulses a plurality of times even if a plurality of nuclei are produced. As a result, only the region irradiated with laser in the amorphous silicon is turned into a seed crystal 91. Then a wide beam 77 with a width equal to or below twice mean nucleus growth distance r. Since r is not more than 2-5 μm or so, W has only to be 10 μm or below. Furthermore, if w is not more than the mean nucleus production interval L, only a single nucleus can be produced with more reliability.

3. 发明专利

JPH06295696A SCANNING TYPE MICROSCOPE 失效
公开(公告)号：JPH06295696A
公开(公告)日：1994-10-21
申请号：JP8044293
申请日：1993-04-07
申请人： HITACHI LTD
发明人： ICHIKAWA MASAKAZU , NAKAHARA HITOSHI , TANAKA TADAMASA
IPC分类号： H01J37/28 , G01Q30/04 , G01Q60/10
摘要： PURPOSE:To provide a scanning type microscope by which an interface inside of an electric conductor can be observed with high resolution. CONSTITUTION:An electric current flowing to a sample 11 when a probe 1 is separated from a surface of the sample 11 and is operated in a field emission mode or intensity of an electron emitted from the surface of the sample 11 is used as an image signal for a scanning microscope image. Since an interferential effect between an incident electron and an electron reflected on an interface where potential energy becomes discontinuous is used, it can be applied to an optional substance having electric conductivity, and a recess and projection on an interface of about a single atom layer can be detected, and in-plane resolution on an interface is about 1nm, and a surface structure in the same place can be also observed simultaneously.

4. 发明专利

JP2004040132A Method and apparatus for inspecting defect 有权
公开(公告)号：JP2004040132A
公开(公告)日：2004-02-05
申请号：JP2003334551
申请日：2003-09-26
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOMIMATSU SATOSHI , HASEGAWA TAKESHI , HOSOKI SHIGEYUKI , ARAKAWA FUMIKO , ASAYAMA MASAICHIRO , MITSUI YASUHIRO , NAKAHARA HITOSHI , KAWANAMI YOSHIMI
IPC分类号： G01R31/302 , G01R31/28 , H01J37/244 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To measure local electric characteristics of a device having a fine structure for detecting a defect.
SOLUTION: While observing with a scanning electron microscope, a plurality of probes 1, 2, 3 and 4 each having a sharp tip are made to approach sample electrodes 5, 6, 7 and 8, respectively, and made to come into contact with them completely until a contact current saturates by the use of probe moving mechanisms 14, 15, 16 and 17 under the control of a probe movement control circuit 18. After all of the probes used for measurement are made to come into contact with them, the current-voltage characteristics between probes are measured by the use of an electric characteristic measuring circuit 19 and thus the local electric characteristics of an element are obtained.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JPH10253941A MATRIX TYPE IMAGE DISPLAY DEVICE 失效
公开(公告)号：JPH10253941A
公开(公告)日：1998-09-25
申请号：JP5890497
申请日：1997-03-13
申请人： HITACHI LTD
发明人： HATANO MUTSUKO , AKIMOTO HAJIME , NAKAHARA HITOSHI
IPC分类号： G02F1/133 , G09G3/36
摘要： PROBLEM TO BE SOLVED: To provide a high resolution and large-sized matrix type display device capable of inputting a high resolution display signal to respective pixels even during a short display signal input time. SOLUTION: Each display pixel circuit 14 is provided with a D/A converter 22, and a TN liquid crystal capacitor 23 is connected to the output of the D/A converter 22, and the output of a latch is connected to the input. The timing input of the latch 21 is connected to a Y drive circuit 15 through a gate line 11, and the data input of the latch 21 is connected to an X drive circuit 16 through a data bus 12. The other end of the TN capacitor 23 is connected to a common electrode 24. The Y drive circuit 15 selects successively the gate line of respective rows according to a clock 17 inputted from a control circuit 19 to set it in a high voltage level. A digital display signal is inputted to the X drive circuit 16 through a digital input line 18, and to be outputted to the data bus 12 at every row when digital display signals by one row are collected.

6. 发明专利

JPH0945272A SCANNING REFLECTING ELECTRON DIFFRACTION MICROSCOPE 失效
公开(公告)号：JPH0945272A
公开(公告)日：1997-02-14
申请号：JP19726095
申请日：1995-08-02
申请人： HITACHI LTD
发明人： NAKAHARA HITOSHI
IPC分类号： H01J37/29
摘要： PROBLEM TO BE SOLVED: To make necessary measurements of a sample whose surface crystal structure varies from one part to another by combining detection signals from a plurality of electron-ray detecting electrodes, and transmitting them to a scanning electron microscope display circuit. SOLUTION: Electron-ray detecting electrodes comprise a plurality of concentric detecting electrodes 301, a shield electrode 300 for preventing the entrance of extra electron rays from the outside, and an insulating material 302 for electrically insulating these electrodes from one another. Signals from each electrode are guided out of a vacuum by a shielding wire 303 and preamplified by a signal amplifier 206. The signals amplified are selected by a changeover switch 210 and fed to a scanning electron microscope display circuit 202. This scanning reflecting electron diffraction microscope has an electron mirror which produces a converging electron ray with an applied voltage of not less than 5KV, a sample stage which can be adjusted so that the converging electron ray is at a glancing angle of not more than 10 deg. to the sample, and an incident electron ray scan mechanism capable of scanning an incident position on the sample.

7. 发明专利

JPH0933545A SPECTRAL EQUIPMENT 失效
公开(公告)号：JPH0933545A
公开(公告)日：1997-02-07
申请号：JP18528695
申请日：1995-07-21
申请人： HITACHI LTD
发明人： KIMURA YOSHINOBU , NAKAGAWA KIYOKAZU , NISHIDA AKIO , NAKAHARA HITOSHI
IPC分类号： G01N37/00 , G01N21/27 , G01Q30/02 , G01Q60/00 , G01Q60/10
摘要： PROBLEM TO BE SOLVED: To obtain a reflection spectrum of a local area by a sample electric field by impressing a bias voltage between a sample and a probe fitted to a displacement element so that the probe can be made to approach the surface of the sample. SOLUTION: A bias voltage of several volts is impressed between a probe 11 fitted to a displacement element 12 for Z movement and a sample 18 by a power source 14 so as to make the element 12 operate and thereby the probe 11 is made to approach the sample 18. A current between the probe 11 and the sample 18 being monitored, on the occasion, the probe 11 is made to approach until a tunnel current flows between the sample 18 and the probe 11. Since the bias voltage is fixed, a distance of 1nm or less is known from the relationship between the value of the voltage impressed on the element 12 and the amplitude of the tunnel current. Thereby making determination of an impressed electric field of the sample, which has been difficult heretofore. On the other hand, light of a light source 15 is made monochromatic by a monochromator 16 and reflected on the surface of the sample 18. A light- sensitive detector 17 measures the reflected light and a reflection spectrum of a local area by the sample electric field is obtained.

8. 发明专利

JPH08233832A SCANNING PROBE MICROSCOPE 失效
公开(公告)号：JPH08233832A
公开(公告)日：1996-09-13
申请号：JP3491595
申请日：1995-02-23
申请人： HITACHI LTD
发明人： NAKAHARA HITOSHI
IPC分类号： G01B21/30 , G01N37/00 , G01Q10/04 , G01Q90/00 , G11B9/14 , H01J37/28
摘要： PURPOSE: To realize a scanning probe microscope easy in the combination with other analyzing instrument while constituting a high-speed atom order recording and reading head. CONSTITUTION: A scanning probe microscope is constituted of a probe tip part 10 for observing the surface of a sample 3, the cantilever 11 supporting the probe tip part, an expansion and contraction mechanism 12 having the displacing direction almost parallel to the surface of a sample and the drive mechanism support stand supporting the expansion and contraction mechanism 12. The cantilever 12 is separated into two parts so as to form an angle of below 90 deg. at the branch part in the vicinity of the probe tip part and one of two ends on the side opposite to the branch point of the separated cantilever is fixed to the probe drive mechanism support stand and the other end of them is fixed to the expansion and contraction mechanism.

9. 发明专利

JPH06174412A HEATED PROBE FOR SCANNING TUNNELING MICROSCOPE AND PROBE HOLDER 失效
公开(公告)号：JPH06174412A
公开(公告)日：1994-06-24
申请号：JP33139592
申请日：1992-12-11
申请人： HITACHI LTD
发明人： NAKAHARA HITOSHI , HASEGAWA TAKESHI , ICHIKAWA MASAKAZU
IPC分类号： G01B7/34 , G01Q40/00 , G01Q60/10 , G01Q60/16 , G01Q70/02 , H01J37/28
摘要： PURPOSE:To provide a probe capable of being heated and having a high center symmetric property and high rigidity and provide a probe holder. CONSTITUTION:A heated probe system is constituted of a probe 2 fixed to a center electrode 21, a hairpin type conducting wire 10 welded near the tip section 1 of the probe 2, and an outside electrode 22 fixing the conducting wire 10. The tip 1 of the probe 2 can be kept invariably clean, and a microscope resistant to thermal distortion and external vibration and capable of making a high-speed scan can be realized.

10. 发明专利

JPH0547659A EPITAXY METHOD FOR SURFACE CONTROL 失效
公开(公告)号：JPH0547659A
公开(公告)日：1993-02-26
申请号：JP20277691
申请日：1991-08-13
申请人： HITACHI LTD
发明人： NAKAHARA HITOSHI , ICHIKAWA MASAKAZU
IPC分类号： C30B23/08 , H01L21/20
摘要： PURPOSE:To provide crystallinity of a grown film and to reduce a temperature of a process by vapor-depositing predetermined substance of a thickness of one atom layer or less before deposition substance is vapor-deposited on a silicon substrate. CONSTITUTION:A silicon substrate 5 is momentarily heated to 1470K by a sample heating power source 8, then heated at 1170K, and surface-cleaned. Then, a gallium deposition source 7 is heated by a power source 10, and gallium (catalytic substance) is vapor-deposited at a 1/3 atom layer on the substrate 5 at the ambient temperature. Thereafter, the substrate 5 is heated at 920K, and a 3 X3 structure (catalytic layer) of an alloy state of silicon and gallium is formed. Then, while substrate 5 is being held at 600K, a silicon deposition source 6 is heated by a heating power source 9 to evaporate silicon, and the silicon is epitaxially grown. The catalytic substance is a substance having 670K or lower of a melting point and 50nm or more of surface segregation coefficient to the silicon at 670K. Thus, a thin film having excellent crystallinity even at a low temperature of 770K or lower of a substrate temperature is obtained.

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