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1. 发明专利

JPH08115928A SEMICONDUCTOR DEVICE, AND ITS MANUFACTURE 失效
公开(公告)号：JPH08115928A
公开(公告)日：1996-05-07
申请号：JP27701394
申请日：1994-10-17
申请人： HITACHI LTD
发明人： NAGAI HIROYUKI
IPC分类号： H01L21/52
摘要： PURPOSE: To prevent the occurrence of cracks by the thermal stress to a semiconductor pellet. CONSTITUTION: A stress absorbing layer 8, a barrier metal layer 9, and a junction metal layer 10 are made in order on the downside of a semiconductor pellet 1. The stress absorbing layer 8 consists of metal small in elastic coefficient and excellent in heat conductivity, for example, Au or Ag. The barrier metal layer 9 prevents the diffusion of the metal of the stress absorbing layer 8, and consists of, for example, Ni or Ti. The pellet 1 is bonded on the tab 11 in the lead frame consisting of a copper material. The surface of the tab 11 is plated with Au. Accordingly, the thermal stress caused in the pellet by the difference of thermal coefficient between the pellet 1 and the tab 11 is reduced by the stress absorbing layer 8, so cracks are prevented from occurring in the pellet 1.

2. 发明专利

JPH07142509A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 失效
公开(公告)号：JPH07142509A
公开(公告)日：1995-06-02
申请号：JP14455793
申请日：1993-06-16
申请人： HITACHI LTD
发明人： NAGAI HIROYUKI
IPC分类号： H01L29/812 , H01L21/338
摘要： PURPOSE:To provide a junction FET on a semiconductor substrate which ensures a good characteristic in temperature without a large reduction in frequency characteristics. CONSTITUTION:A gate electrode 4g of an MES-FET 2 is formed on a semiconductor substrate 1. The gate electrode 4g is made up of electrode parts 4g1 and 4g2 that are elongated at right angles. In this way, the MES-FET 2 is made up of an MES-FET 2a, through which a drain current is carried in a (-110) face direction, and an MES-FET 2b, through which a drain current is carried in a (110) face direction.

3. 发明专利

JPH05251591A 失效
公开(公告)号：JPH05251591A
公开(公告)日：1993-09-28
申请号：JP4932392
申请日：1992-03-06
申请人： HITACHI LTD
发明人： NAGAI HIROYUKI
IPC分类号： H01L21/56 , H01L23/29 , H01L23/31
摘要： PURPOSE:To provide a packaging structure of an FET for SHF band low noise amplification of simple structure and low manufacturing cost which can restrain dielectric loss low. CONSTITUTION:When a semiconductor pellet 2 including an FET for SHF band low noise amplification is packaged by resin mold such as resin, at least a signal propagation path part among an outer lead 3, a bonding wire 4 and a pellet 2 is coated with resin mold 5 containing bubbles. An outside of the resin mold 5 containing bubbles is further coated with airtight resin mold 6. Since proximity of the signal propagation path is thereby enclosed with bubbles whose dielectric constant is locally low, electrostatic capacity is reduced and dielectric loss in signal propagation is restrained low.

4. 发明专利

JPH0669245A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0669245A
公开(公告)日：1994-03-11
申请号：JP23780292
申请日：1992-08-12
申请人： HITACHI LTD
发明人： NAGAI HIROYUKI , ITO MAMORU
IPC分类号： B29C45/02 , B29L31/34 , C08G59/00 , C08L63/00 , H01L21/338 , H01L21/56 , H01L23/29 , H01L23/31 , H01L29/812
摘要： PURPOSE:To provide a semiconductor device with a small dielectric loss caused by a resin sealing package, by using a resin sealing package made of a sealing resin base material mixed with a resin having a lower permittivity than the resin base material. CONSTITUTION:A resin 60 for forming a resin sealing package 5 is made up of an epoxy resin 60a mixed with a given amount of PTFE resin 6 having a permittivity lower than that of the epoxy resin 60a. Then, the resin sealing package 5 has a lower permittivity than that of one made up of only the epoxy resin 60a. Then, a dielectric loss between the resin sealing package 5 and a wire-bonding wire 4, inner leads 43, 44, and 45 is reduced. Consequently, the noise figure (NF) and the power gain (Ga) in high-frequency characteristics are improved in GaAs FET.

5. 发明专利

JPH05102762A ELECTRONIC DEVICE AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05102762A
公开(公告)日：1993-04-23
申请号：JP25730091
申请日：1991-10-04
申请人： HITACHI LTD
发明人： NAGAI HIROYUKI
IPC分类号： H01L23/04 , H01L23/02 , H03F3/60 , H05K1/02 , H05K1/14 , H05K3/36
摘要： PURPOSE:To improve the electric characteristic of the electronic device and to improve the electric characteristic of the semiconductor device. CONSTITUTION:A distance between printed circuit boards 2, 7 for the electronic device is reduced to decrease the distance between an end face of a strip line 10 toward a lead 5 and an end face of the printed circuit boards 2, 7 than the distance between an end face of the strip line 10 at other region and an end face of the printed circuit boards 2, 7. The width of the lead 5 is approximated to a width of the strip line 10. Since the length of the lead 5 wired in air between the strip lines 10 is reduced, the production of a reactance is reduced and defective matching in the impedance is reduced. Thus, the power loss due to difference of the shape of the lead 5 and the strip line 10 is reduced.

6. 发明专利

JP2012175325A Ip telephone system and handset 审中-公开
标题翻译： IP电话系统和手机
公开(公告)号：JP2012175325A
公开(公告)日：2012-09-10
申请号：JP2011034391
申请日：2011-02-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAGAI HIROYUKI
IPC分类号： H04M3/00 , H04M1/00 , H04M3/54
摘要： PROBLEM TO BE SOLVED: To provide an IP telephone system 10 capable of performing communication by an IP telephone even in a place remote from a self seat.SOLUTION: An IP telephone system 10 includes a user computer 20 and a handset 30. The user computer 20 performs call control by using a session initiation protocol (SIP) and the like with an IP telephony server 11 in accordance with an operation by a user, and notifies the handset 30 of the establishment of a call when the call is established. When the establishment of the call is notified from the user computer 20, the handset 30 performs voice communication by using a real-time transport protocol (RTP) and the like with an IP telephone set 14 of an opposite party.
摘要翻译：要解决的问题：提供一种即使在远离自身座位的地方也能够通过IP电话进行通信的IP电话系统10。 IP电话系统10包括用户计算机20和手机30.用户计算机20根据操作使用会话发起协议（SIP）等与IP电话服务器11进行呼叫控制并且在呼叫建立时通知手机30建立呼叫。当从用户计算机20通知呼叫的建立时，手机30通过使用实时传输协议（RTP）等与对方的IP电话机14进行语音通信。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JPH05108684A OUT-STOCK INSTRUCTION SYSTEM 失效
公开(公告)号：JPH05108684A
公开(公告)日：1993-04-30
申请号：JP27071491
申请日：1991-10-18
申请人： HITACHI LTD , HITACHI SYST ENG KK
发明人： MURAMOTO SHINJI , ANDO MASAMI , ENDO HIROSHI , YOSHIDA KAZUO , NAGAI HIROYUKI
IPC分类号： G06Q10/08 , G06Q50/00 , G06Q50/28
摘要： PURPOSE:To keep the total stock at the least and necessary level when a production process is started in an out-stock instruction system where the parts are carried out a parts warehouse and sent to the production process. CONSTITUTION:An out-stock request frequency calculating part 2 is provided to calculate the out-stock request number of parts for each production order by inputting information on a production together with an out-stock totalized number storage part 4 which stores the totalized number of each parts, an excess out-stock quantity storage part 5 which stores the excessive out-stock number of each parts for each work center, an out-stock instruction number calculating part 3 which calculates the out-stock instruction number from the out-stock request number, the totalized number, and the excessive out-stock quantity, and an out-stock instruction output part 6 which outputs the out-stock instruction number.

8. 发明专利

JPS5180026A 失效
公开(公告)号：JPS5180026A
公开(公告)日：1976-07-13
申请号：JP495875
申请日：1975-01-10
申请人： HITACHI LTD
发明人： NAGAI HIROYUKI
IPC分类号： F16K1/22

9. 发明专利

JPH0917955A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0917955A
公开(公告)日：1997-01-17
申请号：JP18785795
申请日：1995-06-30
申请人： HITACHI LTD
发明人： NAGAI HIROYUKI
IPC分类号： H01L21/822 , H01L27/04 , H01L29/80
摘要： PURPOSE: To provide a semiconductor device where a passive element can be designed freely without being restricted by the condition of a pellet, and the formation of a parasitic element can be suppressed. CONSTITUTION: In MMIC1, a submount 10 made of dielectric is mounted on the rear of a GaAs pellet 2, and the obverse and reverse of the submount 10 are covered with the first conductor layer 11 and the second conductor layer 12, thus a capacitor 13 is constituted. A resistor 15 and an inductor 14 are made on the surface of the submount 10. The pellet 15 is made of an adhesive material layer to bond the pellet to the submount. These passive elements 13, 14, and 15 are connected to the GaAsFET of the pellet 2 being an active element. Hereby, a capacitance, a resistor, and an inductor are made on the submount, so they can be set freely without being restricted by the condition of the pellet, and the formation of a parasitic element can be avoided.

10. 发明专利

JPH07288274A WAFER TRANSFER APPARATUS 失效
公开(公告)号：JPH07288274A
公开(公告)日：1995-10-31
申请号：JP8006294
申请日：1994-04-19
申请人： HITACHI LTD , HITACHI SHONAN DENSHI
发明人： FUKADA MASAO , HORIUCHI MITSUAKI , NAGAI HIROYUKI , KADOTA TAKAYUKI , KAI MASABUMI , TERADA MASANORI , HARUYAMA MITSUNOBU
IPC分类号： B65G1/00 , B65G49/07 , H01L21/67 , H01L21/677 , H01L21/68
摘要： PURPOSE:To improve efficiency of a wafer transfer apparatus and downsize it. CONSTITUTION:A wafer transfer apparatus for transferring wafers 8 one by one by a transfer arm 3 from an arbitrary position of one of cassette jigs to an arbitrary position of the other cassette jig includes two wafer detecting means (detection sensors 12A, 12B) which move together with the transfer arm 3 and have different detection methods. In addition one of the cassette jigs is placed on the other cassette jig.

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