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1. 发明专利

JP2003068695A Manufacturing method of semiconductor integrated circuit device 审中-公开
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：JP2003068695A
公开(公告)日：2003-03-07
申请号：JP2001259111
申请日：2001-08-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIMADA YUTAKA , MORI YASUHIRO , MORITA MITSUHIRO , YOKOSHIMA KENJI
IPC分类号： H01L21/304 , B08B1/00 , B08B1/04 , H01L21/00
CPC分类号： H01L21/67046 , B08B1/00 , B08B1/04
摘要： PROBLEM TO BE SOLVED: To improve foreign matter removing performance in a cleaning processing. SOLUTION: In cleaning a wafer 2, while moving a brush 7 from the center toward outer periphery of the wafer 2, discharge flow rates X1, X2 of a cleaning liquid to be made to flow are adjusted, so that distances d1, d2 between the brush 7 and the wafer 2 become constant.
摘要翻译：要解决的问题：提高清洗处理中的异物去除性能。解决方案：在清洁晶片2的同时，在从晶片2的中心向外周移动刷子7的同时，调整待流过的清洗液的排出流量X1，X2，刷子7和晶片2变得恒定。

2. 发明专利

JP2000100959A WIRING CUTTING/PROCESSING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000100959A
公开(公告)日：2000-04-07
申请号：JP25122299
申请日：1999-09-06
申请人： HITACHI LTD
发明人： MIYAUCHI TAKEOKI , HONGO MIKIO , MARUYAMA SHIGENOBU , MIZUKOSHI KATSURO , YAMAGUCHI HIROSHI , MORITA MITSUHIRO
IPC分类号： B23K26/361 , B23K26/351 , B23K101/38 , H01L21/82 , B23K26/00
摘要： PROBLEM TO BE SOLVED: To provide a method of cutting and processing wirings provided to a semiconductor device or a high-density wiring board by the use of a laser beam, where the wiring can be cut and processed by the use of a laser beam over a wide range of output power without damaging a base board or wirings. SOLUTION: The wiring of a semiconductor device is cut and processed through a method where the required region of a wiring pattern formed in the semiconductor device is irradiated with a laser beam 2 that is 1×109 second in pulse width. A laser beam is stopped before the required region of the wiring pattern is scattered off by heating with a laser beam, and the required region of a specimen is scattered off and removed by the energy of an irradiating laser beam 2 while a laser beam is stopped.

3. 发明专利

JPS61194741A BIT CORRECTION EQUIPMENT 失效
公开(公告)号：JPS61194741A
公开(公告)日：1986-08-29
申请号：JP3432185
申请日：1985-02-25
申请人： HITACHI LTD
发明人： IRIKITA NOBUYUKI , NISHIZUKA HIROSHI , KOMORIYA SUSUMU , MORITA MITSUHIRO , INOUE MORIO
IPC分类号： H01L21/268 , H01L21/82
摘要： PURPOSE:To prevent the generation of bit correction failure, by installing the link detecting system, the laser system and the controlling unit provided with the operating unit, comparing unit and controllers. CONSTITUTION:When the surface of the semiconductor device 1 is irradiated by the light source 26 of the detection optical system 22 and the link 2 is scanned, the detected signal SX1 and SY2 are obtained by the CCD's 32 and 33. By processing these signals in the processing unit 41, calculating them in the operating unit 42, memorizing the width W1, length L1 and the position of the center X1, Y1 in the memory part 43 and operating the controller 45, the center of the link 2 is set at the center of the laser optical system 21. By operating the controller 48, the laser beam of the laser source 23 is converged through the objective lense to melt and cut the link 2. The detection optical system 22 detects again the link 2 and obtains the signals SX2 and SY2. The signal processing unit 41 and the operating unit 42 calculate the width W2, the length L2 and the position of center X2, Y2 of the hole 3 formed by melting. These values are compared with the memorized data W1, L1, X1 and Y1 in the comparing unit 44, and the result of melting is confirmed. Thus, the bit correction failure can be prevented and the reliability of the bit correction can be increased.

4. 发明专利

JPS61137396A Shield apparatus 失效
标题翻译：屏蔽装置
公开(公告)号：JPS61137396A
公开(公告)日：1986-06-25
申请号：JP25914284
申请日：1984-12-10
申请人： Hitachi Ltd
发明人： NAKAGAWA KIYOSHI , MORITA MITSUHIRO
IPC分类号： H05K9/00 , H05K5/04 , H05K7/20

5. 发明专利

JPS6085309A AIR MICROMETER 失效
公开(公告)号：JPS6085309A
公开(公告)日：1985-05-14
申请号：JP19236383
申请日：1983-10-17
申请人： HITACHI LTD
发明人： MORITA MITSUHIRO
IPC分类号： G01B13/00
摘要： PURPOSE:To expand the range of detection and to enhance sensitivity, by controlling a variable diaphragm, which is provided between an air source and a nozzle in correspondence with the size of a gap. CONSTITUTION:For example, in the case of application of a mask aligner into an automatic focal point system, an annular space, wherein an outer tube 10 is provided and formed at the lower tip of a mirror tube 4, is used as a nozzle 11. An air tube 12, which is communicated to the upper part of the nozzle 11, is connected to an air pressure source 14 through a tube 13. At the upper part of the tube 12, an air pressure regulator 15 is provided. A variable diaphragm 16 is provided at the central part of the tube 12. An air pressure detecting part 17 is provided at the position immediately above the nozzle 11. A ring gear 19 at the outside of a plurality of diaphragm blades 18 is turned by a step motor 20 through a worm gear 21. The amount of contraction of the diaphragm 16 is varied. An up and down driving mechanism 8 of the regulator 15, the diaphragm 16, a detecting part 17, and the tube 4 are connected to a control circuit 23. Thus the requirements for the detecting range and the sensitivity can be satisfied by a single micrometer.

6. 发明专利

JPS58215621A 1:1 projection aligner 失效
标题翻译： 1：1投影对准器
公开(公告)号：JPS58215621A
公开(公告)日：1983-12-15
申请号：JP9767182
申请日：1982-06-09
申请人： Hitachi Ltd
发明人： MORITA MITSUHIRO
IPC分类号： G02B5/09 , G02B26/12 , G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70058 , G02B5/09 , G02B26/126
摘要： PURPOSE:To use laser light for high-illuminance, high-resolution exposure, by providing an optical means which relfects and projects laser light from a laser light source as arcuate lighting. CONSTITUTION:The laser light emitted from the laser light source 1 is projected on a rotatable polygon mirror 6 in a pyramidal shape, which reflects the laser light to a rotating curved-surface mirror 7. In this case, a point A on the mirror 7 has an arcuate track as shown by an alternate long and short dash line, and consequently the mirror 7 reflects and projects the lasr light from he polygon mirror 6 upon a mask 8 as arcuate lighting. The (1:1) image formation optical system consisting of a concave mirror 9 and a convex mirror 10 has no astigmatism for an arc with some radius r0, so the light is condensed on to the mask 8 suffciently and the width of the arcuate lighting is decreased to nearly eliminate the astigmatism of the arcuate lighting, so that the resolution of a pattern obtained by exposure, printing, and development increases extremely.
摘要翻译：目的：通过提供一种将激光源的激光照射并投射为弓形照明的光学装置，将激光用于高照度，高分辨率曝光。构成：从激光光源1发射的激光以能够将激光反射到旋转的曲面镜7的金字塔状的可旋转多面镜6投影。在这种情况下，镜7上的点A 具有由交替的长短虚线所示的弓形轨迹，因此反射镜7将来自多面镜6的激光反射并投射到掩模8上作为弧形照明。由凹面镜9和凸面镜10组成的（1：1）图像形成光学系统对于具有一定半径r 0的电弧没有像散，所以光被充分地聚集到掩模8上，并且弓形照明的宽度减少到几乎消除了弧形照明的散光，使得通过曝光，印刷和显影获得的图案的分辨率极大地增加。

7. 发明专利

JPS5612725A METHOD AND APPARATUS FOR SETTING POSITION OF WAFER IN PROJECTION ALIGNER 失效
公开(公告)号：JPS5612725A
公开(公告)日：1981-02-07
申请号：JP8692679
申请日：1979-07-11
申请人： HITACHI LTD
发明人： NISHIZUKA HIROSHI , MORITA MITSUHIRO , OOSAKATANI TAKAYOSHI
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To increase the resolution in the periphery of the wafer by aligning the wafer surface on a reference surface with a projection aligner, measuring the parallelism of the wafer, and paralleling the wafer so that the parallelism lies within a specified reference value. CONSTITUTION:The wafer 5 is attracted to a wafter chuck 2 by vacuum, and contacted with leveling pads 1A-1C. After the paralleling alignment, the wafer is lowered about 50mum. Then, the distances d1-d3 to the surface of the wafer are measured by air micrometers 7A-7C, thereby the parallelism is obtained. If the parallelism does not lie within a reference value, the leveling is repeated several times until the parallelism reaches the specified reference value. When the reference value has been attained, exposure is performed. If the air micrometer 7D is provided at the portion of the paralleling alignment portion 3 corresponding to the center of the wafer 5, the warp and curve of the wafer can be also measured.

8. 发明专利

JPS5482173A WAFER ADHESION*SEPARATION MECHANISM FOR MASK ALIGNER 失效
公开(公告)号：JPS5482173A
公开(公告)日：1979-06-30
申请号：JP14922277
申请日：1977-12-14
申请人： HITACHI LTD
发明人： NISHIZUKA HIROSHI , MAEJIMA HIROSHI , YOSHIDA KIYOSHI , MORITA MITSUHIRO
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027 , H01L21/68
摘要： PURPOSE:To secure smooth adhesion and separation of the wafer by providing the sucking disc at the wafer circumference area of the chuck. The sucking disc expands and pushes the wafer when the mask is adhered to the wafer and contracts to suck the wafer when separating the mask from the wafer. CONSTITUTION:With supply of the compressed N2 gas through vent 10a, the center part of wafer 14 is adhered earlier than the circumference part to mask 16, and furthermore high-voltage N2 is supplied through vent 10b to expand sucking disc 12 and thus to adhere the wafer circumference to the mask. In this way, the mask adheres uniformly to the wafer. Vent 10b is exhausted first and then the vacuum exhaustion is given to vent 10a, and thus the wafer circumference is separated first from the mask via the function of the sucking disc. And then the whole wafer is separated by the vacuum force of the chuck. Thus, the smooth adhesion and separation becomes possible for the wafer.

9. 发明专利

JPH01169942A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01169942A
公开(公告)日：1989-07-05
申请号：JP32692987
申请日：1987-12-25
申请人： HITACHI LTD
发明人： MIYAUCHI TAKEOKI , MORITA MITSUHIRO , YAMAGUCHI HIROSHI , HONGO MIKIO , MIZUKOSHI KATSURO , SAITOU HIROYA
IPC分类号： G11C17/14 , G11C17/06 , H01L21/3205 , H01L21/82 , H01L23/52 , H01L27/10
摘要： PURPOSE:To reduce heat travelling from the central part of a wiring cutting-off link to the wiring direction by the effect of heat transfer, by arranging two or more parts whose widths are different from the other parts, in the wiring cutting-off link. CONSTITUTION:A guard ring 2 prevents the permeation of contaminant from an external wiring 1. A wiring cutting-off link 3 is introduced into the guard ring 2. At two parts near both ends of the link 3 on an Si substrate, are arranged portions 3a, 3b whose widths are narrower than the other portions. When a circular region 4 containing a portion having a normal width W between the narrowed portions 3a, 3b of the link 3 is irradiated with a laser light of continuous oscillation lik Ar laser, a central part 5 is fused and cut out, because thermal conduction to both ends of the irradiated part is restrained by the narrowed portions 3a, 3b, and the temperature of irradiated part is increased as the results of heat concentration. However, the Si substrate of lower layer suffers no damage at all, because the radiating laser light is continuous and the peak value is small.

10. 发明专利

JPS62136853A LASER WORKING APPARATUS 失效
公开(公告)号：JPS62136853A
公开(公告)日：1987-06-19
申请号：JP27672685
申请日：1985-12-11
申请人： HITACHI LTD
发明人： MORITA MITSUHIRO , INOUE MORIO
IPC分类号： H01S3/10 , B23K26/064 , H01L21/268 , H01L21/3205 , H01L21/768 , H01L21/82
摘要： PURPOSE:To improve the productivity of a laser working apparatus which performs a predetermined work by applying a laser beam to the specific position of a workpiece by employing a laser source which emits a laser beam with a variable wavelength. CONSTITUTION:The shutter S of a laser source A is opened and a long wavelength laser beam L is selected and applied to a wafer 2 through a laser output controller 3, a half mirror 4 and further a beam positioner 5. At that time, a part of the laser beam L is detected by an incident luminous power detector 12 and, at the same time, the laser beam L reflected by the wafer 2 is detected by a reflected luminous power detector 13. Then an alignment controller 11 detects an alignment mark by factors such as the variation of the reflectance of the laser beam L to perform the alignment. Then, when the shutter S is closed, the shutter S2 of the source A is opened and a laser beam L2, which has a wavelength shorter than the laser beam L used for the alignment, is selected and applied. With this constitution, the improvement of the alignment accuracy and a wider work margin can be obtained simultaneously and the yield in a bit saving work can be improved.

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