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1. 发明专利

JPH02310958A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH02310958A
公开(公告)日：1990-12-26
申请号：JP13132389
申请日：1989-05-26
申请人： HITACHI LTD
发明人： IGUCHI MASANORI , OWADA NOBUO , KASAHARA OSAMU
IPC分类号： H01G4/00 , H01L21/822 , H01L21/8229 , H01L27/04 , H01L27/102
摘要： PURPOSE:To enhance electrical reliability by a method wherein a first electrode layer, a dielectric layer formed of a tantalum oxide film and a second electrode layer are laminated one after another and the second electrode layer is formed of a transition metal film or a transition metal silicide film which has been deposited. CONSTITUTION:A capacity element Ca is constituted of a stacked structure where a first electrode layer 19, a dielectric film 23 and a second electrode layer 24 have been laminated one after another. Actually, the capacity element Ca is constituted of a four-layer structure where the first electrode layer 19, a spontaneous silicon oxide film 19A, the dielectric film 23 and the second electrode layer 24 have been laminated one after another because the naturally oxidized silicon film 19A used as one part of the first electrode layer 19 and the dielectric layer 23 is laid between the first electrode layer and the dielectric layer. The second electrode layer 24 is formed on the dielectric film 23 in such a way that their patterns are identical. The second electrode layer 24 is formed of a transition metal silicide film, e.g. a WSix film, which is hardly reacted with a Ta2O5 film, whose bonding property is high at a stepped shape part on the surface of a substratum and which has been deposited by a chemical vapor deposition method; it is formed in a film thickness of, e.g. about 200 to 300[nm].

2. 发明专利

JPH01304761A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH01304761A
公开(公告)日：1989-12-08
申请号：JP13609988
申请日：1988-06-02
申请人： HITACHI LTD
发明人： OWADA NOBUO , HORIUCHI MITSUAKI , OGISHI HIDEJI , IGUCHI MASANORI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8229 , H01L27/10 , H01L27/102
摘要： PURPOSE:To improve heat resistance of a capacity element by providing an aluminum wiring interposing a conductive transition metal nitride film on a transition metal silicide film. CONSTITUTION:In a semiconductor integrated circuit device having a capacity element Ca which is provided with a lamination of a transition metal silicide film (upper side electrode 24) on a Ta2O5 film (a dielectric film 23), an aluminum film 28B is provided by interposing a transition metal nitride film (a barrier metal film 28A) on the transition metal silicide film. Reaction of the aluminum film 28B and the transition metal silicide film can be therefore restrained thus preventing aluminum atom from entering the Ta2O5 film to breakdown it. According to this constitution, the upper electrode 24 and a wiring 28 can be connected within a region forming the capacity element Ca, and an area of the capacity element Ca can be reduced by an area equivalent to the area of the connection thus improving integration properties and heat resistance of a semiconductor integrated circuit device.

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