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1. 发明专利

JP2014154704A Dicing/die bonding integrated tape 审中-公开
标题翻译： DICING / DIE BONDING INTEGRATED TAPE
公开(公告)号：JP2014154704A
公开(公告)日：2014-08-25
申请号：JP2013023316
申请日：2013-02-08
申请人： Hitachi Chemical Co Ltd , 日立化成株式会社
发明人： KAYA MICHIKO , SUZUMURA KOJI , SAKUTA TATSUYA , IWANAGA YUKIHIRO
IPC分类号： H01L21/301 , C09J4/02 , C09J7/02 , C09J11/06 , C09J133/14 , C09J163/00 , H01L21/52
CPC分类号： H01L24/27 , H01L24/83 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a producible dicing/die bonding integrated tape having high stickiness in the dicing process, and having low stickiness in the pickup process, especially a dicing/die bonding integrated tape having an adhesive layer capable of expressing low stickiness in the pickup process.SOLUTION: In a dicing/die bonding integrated tape where at least a base material layer, an adhesive layer and an adhesion layer are laminated in this order, the dispersion component value Aispersion when dividing the surface free energies A, A of the adhesive layer before ultraviolet light irradiation into a polarity component and a dispersion component, and the surface free energies B of the adhesive layer after ultraviolet light irradiation satisfy the relation of following general formula (I). Aispersion/((B-A)/A)≤20...(I).
摘要翻译：要解决的问题：提供一种在切割工艺中具有高粘性的可生产的切割/芯片粘接一体化带，并且在拾取过程中具有低粘性，特别是具有能够表现低粘性的粘合剂层的切割/芯片粘合集成带拾取过程。解决方案：在依次层叠至少一个基材层，粘合剂层和粘合层的切割/芯片结合集成带中，当将表面自由能A，A分割时的分散分量值A 紫外线照射成极性成分之前的粘合剂层和分散成分，紫外线照射后的粘合剂层的表面自由能B满足下述通式（I）的关系。 Aispersion /（（B-A）/ A）≤20...（I）。

2. 发明专利

JP2014007230A Tape for wafer processing, manufacturing method of tape for wafer processing, and manufacturing method of semiconductor device 审中-公开
标题翻译：用于波浪加工的带，用于波形加工的带的制造方法和半导体器件的制造方法
公开(公告)号：JP2014007230A
公开(公告)日：2014-01-16
申请号：JP2012140847
申请日：2012-06-22
申请人： Hitachi Chemical Co Ltd , 日立化成株式会社
发明人： TANIGUCHI KOHEI , SUZUMURA KOJI , SAKUTA TATSUYA
IPC分类号： H01L21/301 , C09J7/02
摘要： PROBLEM TO BE SOLVED: To provide a tape for wafer processing and a manufacturing method of a tape for wafer processing, which can improve a peel strength with a wafer ring; and to provide a manufacturing method of a semiconductor device using the tape.SOLUTION: A tape used in processing a semiconductor wafer comprises: a peeling base material; an adhesive layer provided on one surface side of the peeling base material; a pressure-sensitive adhesive layer which is provided in such a way as to cover the adhesive layer and composed of at least two layers; and a base material film provided in such a way as to cover the pressure-sensitive adhesive layer. The pressure-sensitive adhesive layer and the base material film have sticking areas to the wafer ring, which project outward from the adhesive layer. In the sticking area, the pressure-sensitive adhesive layer is exposed on the peeling base material side, and a relation at 25°C between a pressure-sensitive adhesive area (c) of the pressure-sensitive adhesive layer in the sticking area on the peeling base material side and a pressure-sensitive adhesive area (D) of the pressure-sensitive adhesive layer which contacts the adhesive layer satisfies a relation expression (1): "adhesion of pressure-sensitive adhesive area (C)>adhesion of pressure-sensitive adhesive area (D)".
摘要翻译：要解决的问题：提供用于晶片加工的带材和用于晶片加工的带材的制造方法，其可以提高晶片环的剥离强度; 并提供使用该带的半导体器件的制造方法。解决方案：用于处理半导体晶片的胶带包括：剥离基材; 设置在剥离基材的一个表面侧的粘合剂层; 压敏粘合剂层，其以覆盖粘合剂层并且由至少两层构成的方式设置; 以及以覆盖压敏粘合剂层的方式设置的基材膜。压敏粘合剂层和基材膜具有从粘合剂层向外突出的晶片环的粘附区域。在粘着区域中，在剥离基材侧露出压敏粘合剂层，并且在25℃下在粘合层上的粘合剂层的粘合剂区域（c）之间的关系剥离基材侧和与粘合层接触的粘合剂层的压敏粘合剂区域（D）满足关系式（1）：“粘合剂粘合面积（C）的粘合性” 敏感区域（D）“。

3. 发明专利

JP2003206435A ANTI-FOGGING COATING, ANTI-FOGGING MOLDED ARTICLE AND ANTI-FOGGING SHEET 审中-公开
公开(公告)号：JP2003206435A
公开(公告)日：2003-07-22
申请号：JP2002005475
申请日：2002-01-15
申请人： HITACHI CHEMICAL CO LTD
发明人： SUZUMURA KOJI , YOSHIKAWA TORU , ISHIKAWA TATSUO
IPC分类号： C09K3/00 , C08F2/24 , C08F2/44 , C08F220/10 , C08F290/04 , C09D5/02 , C09D133/00 , C09D133/04 , C09D157/06
摘要： PROBLEM TO BE SOLVED: To provide an anti-fogging coating excellent in long-term storage stability of coating, free from occurrence of organic solvent vapor in coating and drying, excellent in coating property, anti-fogging property, water resistance, heat resistance, etc., and forming transparent anti-fogging coating film and to provide an anti-fogging molded article by coating a molded article with the coating and drying the coating film. SOLUTION: This anti-fogging coating comprises a polymer emulsion obtained by carrying out emulsion polymerization of 100 pts.wt. monomer mixture composed of 10-30 pts.wt. at least one kind of monomer selected from water-soluble (meth)acrylic monomers, 5-20 pts.wt. at least one kind of substance selected from polymer-reactive surfactants, 1-10 pts.wt. at least one kind of monomer selected from an alkoxysilyl group-containing vinyl or (meth)acrylic monomers and 84-40 pts.wt. at least one kind of monomer selected from water-insoluble (meth)acrylic or vinyl monomers in the presence of colloidal inorganic particles. This anti-fogging molded article or the like is obtained by applying the coating to the molded article and drying the molded article. COPYRIGHT: (C)2003,JPO

4. 发明专利

JP2003137947A METHOD FOR PRODUCING GRAFT COPOLYMER HAVING IMPROVED WEATHERABILITY 审中-公开
公开(公告)号：JP2003137947A
公开(公告)日：2003-05-14
申请号：JP2001340163
申请日：2001-11-06
申请人： HITACHI CHEMICAL CO LTD
发明人： TATEOKA SEISHU , ISHIKAWA TATSUO , SUZUMURA KOJI
IPC分类号： C08F291/02 , C08F285/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a graft copolymer having improved weatherability. SOLUTION: This method for producing a graft copolymer having improved weatherability comprises, as a first stage, subjecting 10-50 parts wt. of a monomer mixture (B) containing an aromatic vinyl-based monomer (c) and 0.001-5 parts wt. of a monomer mixture (C) composed of 0.01-10 parts wt. of 2,2,6,6- tetramethylpiperidine monomer (d) having structure represented by formula (1) and 0.001-5 parts wt. of a polyfunctional polymer (e) to graft polymerization in the presence of 100 parts wt. of a rubber polymer (A) which is obtained by polymerizing a monomer (a) having a 1-8C alkyl group-containing acrylic acid ester in the presence of a diene-based rubber and contains 0-6 wt.% of a polyfunctional polymer (b) in the monomer (a) and, as a second stage, subjecting 5-150 parts wt. of a monomer mixture (D) containing the aromatic vinyl-based monomer (c) to graft polymerization.

5. 发明专利

JPH11246636A PRODUCTION OF STYRENE-BASED COPOLYMER OF MULTI-LAYER STRUCTURE, STYRENE-BASED COPOLYMER OF MULTI-LAYER STRUCTURE AND MOLDING PRODUCT OF STYRENE-BASED COPOLYMER OF MULTI-LAYER STRUCTURE 失效
公开(公告)号：JPH11246636A
公开(公告)日：1999-09-14
申请号：JP4661598
申请日：1998-02-27
申请人： HITACHI CHEMICAL CO LTD
发明人： YAMASHITA YUKIHIKO , SUZUMURA KOJI , NAGAI YOSHINORI
IPC分类号： C08F257/02 , C08F285/00
摘要： PROBLEM TO BE SOLVED: To obtain the subject resin capable of developing excellent weather resistance, luster, etc., especially excellent impact resistance, by subjecting styrene and a specific monomer mixture to emulsion polymerization, similarly subjecting the obtained copolymer to emulsion polymerization and repeating the copolymerization. SOLUTION: A monomer mixture comprising (A) 50-99.899 wt.% of styrene and (B) a monomer mixture constituted of a composition consisting of 0-45 wt.% of at least one selected from (i) a 1-8C (meth)acrylic acid ester and (ii) a vinyl cyanide compound, (iii) 0.001-5 wt.% of a polyfunctional monomer and (iv) 0.1-10 wt.% of a compound of formula I or formula II [R is a group of formula III ((n) is an integer of 1-12)] is subjected to emulsion polymerization so as to make the glass transition temperature >=0 deg.C. The monomer mixture of the next stage is successively added in the presence of the copolymer obtained at the previous stage and polymerized (seed polymerization method) and subjected to emulsion polymerization at five stages in total to give the objective styrene-based copolymer of multi layer structure.

6. 发明专利

JP2015043383A ウェハ加工用テープ有权
标题翻译：波纹加工带
公开(公告)号：JP2015043383A
公开(公告)日：2015-03-05
申请号：JP2013174825
申请日：2013-08-26
申请人：日立化成株式会社 , Hitachi Chemical Co Ltd
发明人： SUZUMURA KOJI , NAKAMURA YUKI , IWANAGA YUKIHIRO
IPC分类号： H01L21/301 , C09J7/02 , C09J11/04 , C09J11/06 , C09J133/00 , C09J163/00
摘要：【課題】薄いウェハをブレードダイシングによって個片化する際においても、チップ飛び、接着層剥がれ、及びリングフレームからのワーク脱落が抑制され、その後のピックアップ工程において、良好なピックアップ性を有する、ウェハ加工用テープを提供する。【解決手段】基材層及び該基材層上の粘着層からなるダイシングテープと、前記粘着層上の接着層とを有し、半導体ウェハに前記接着層及び前記粘着層がこの順で積層された状態で前記半導体ウェハをブレードダイシングによって半導体チップに個片化するダイシング工程と、前記半導体チップを前記接着層とともに前記粘着層から剥離するピックアップ工程とを含む半導体装置の製造方法に用いられるウェハ加工用テープにおいて、−30℃以上25℃以下の範囲における前記粘着層の対数減衰率の最大値が0.15以上0.5以下であり、前記ダイシング工程の後、前記ピックアップ工程の前に、−30℃以上25℃以下の範囲における前記粘着層の対数減衰率の最大値を0.1以上低下させて0.2以下とすることが可能であり、前記対数減衰率が剛体振り子式粘弾性試験装置によって求められる、ウェハ加工用テープ。【選択図】なし
摘要翻译：要解决的问题：即使当通过刀片切割将薄晶片切成单片时，提供了从环形框架切割散射，粘附层去除和工件脱落的晶片处理带，此外，在刀片切割后的拾取过程中具有良好的拾取性能。解决方案：晶片处理带包括：在其上包括基底层和粘合剂层的切割带; 和粘合剂层上的粘合层。晶片处理带用于半导体器件制造方法中，并且该方法包括：切割工艺，其中半导体晶片依次层叠有接合层和粘合剂层，并通过刀片切割分别切割成半导体芯片; 以及从接合层去除具有接合层的半导体芯片的拾取处理。在晶片处理带中，在-30℃至25℃的温度下，粘合剂层的对数递减最大值在0.15和0.5之间的范围内; 并且在切割处理之后和拾取过程之前，粘合剂层中的对数减量的最大值可以在-30℃和25℃之间的温度下降0.1或更多，即降低到0.2或更低 C。对数减量可以通过刚体摆式粘弹性试验装置获得。

7. 发明专利

JP2013131547A Dicing/die bonding integrated tape, and method of manufacturing semiconductor device 有权
标题翻译：定位/拼接一体化带，以及制造半导体器件的方法
公开(公告)号：JP2013131547A
公开(公告)日：2013-07-04
申请号：JP2011278541
申请日：2011-12-20
申请人： Hitachi Chemical Co Ltd , 日立化成株式会社
发明人： MURAHASHI TOMOKO , SUZUMURA KOJI , MASUNO MICHIO , IWANAGA YUKIHIRO
IPC分类号： H01L21/301 , C09J7/02 , C09J201/00 , H01L21/52
CPC分类号： H01L24/27 , H01L2224/83191
摘要： PROBLEM TO BE SOLVED: To provide a dicing/die bonding integrated tape and a method of manufacturing a semiconductor device capable of suppressing generation of a residue of an adhesive agent to a ring frame.SOLUTION: A dicing/die bonding integrated tape 1 has: a base material layer 2 forming a basal part of a tape; and an adhesive layer 3 formed on one surface side of the base material layer 2 and holding a semiconductor wafer and a ring frame. The base material layer 2 has a tacky property, and thereby, the adhesive layer 3 and the base material layer 2 are less likely to be detached from each other, and the adhesive layer 3 is likely to be detached from the ring frame together with the base material layer 2. Therefore, generation of a residue of an adhesive agent to the ring frame can be suppressed.
摘要翻译：要解决的问题：提供一种切割/管芯接合一体化带以及能够抑制粘合剂残留物产生到环形框架的半导体器件的方法。解决方案：切割/管芯接合集成带1具有：形成带的基部的基材层2; 以及形成在基材层2的一个表面侧并保持半导体晶片和环形框架的粘合剂层3。基材层2具有粘着性，因此粘合层3和基材层2难以彼此剥离，并且粘合剂层3可能与环形框架一起脱离因此，可以抑制粘合剂残留物向环形框架的产生。

8. 发明专利

JP2000273319A PSEUDO-CROSSLINKED RESIN AND MOLDED ARTICLE MADE OF THE RESIN 失效
公开(公告)号：JP2000273319A
公开(公告)日：2000-10-03
申请号：JP8565499
申请日：1999-03-29
申请人： HITACHI CHEMICAL CO LTD
发明人： YAMASHITA YUKIHIKO , SUZUMURA KOJI
IPC分类号： C08J5/00 , C08F212/08 , C08F220/02 , C08F246/00 , C08G81/00 , C08L25/08 , C08L33/00 , C08L45/00 , C08L61/06 , C08L63/00 , C08L67/06 , C08L79/08 , C08L101/02
摘要： PROBLEM TO BE SOLVED: To provide a pseudo-crosslinkable resin provided with a new performance, especially capable of compatible exhibition of contradictory characteristics by forming sufficient hydrogen bonds between molecules of a synthetic resin thereby giving a pseudo-crosslinked structure and to provide a molded article made of the pseudo-crosslinked resin. SOLUTION: There is provided a pseudo-crosslinked resin having a pseudo- crosslinked structure obtained by forming a hydrogen bond at least between molecules of one or more synthetic polymers, which synthetic polymers bear a first atomic group containing a group selected among a carbonyl group, a carboxy group, a phenolic hydroxy group and a sulfo group and a second atomic group, containing a group selected from an optionally substituted amino group and a heterocyclic ring group containing at least one nitrogen atom, and capable of reacting with the first atomic group each other to form a hydrogen bond and form a hydrogen bond via the two atomic groups.

9. 发明专利

JPH11240925A PRODUCTION OF MULTILAYERED STRUCTURAL STYRENIC COPOLYMER, MULTILAYERED STRUCTURAL STYRENIC COPOLYMER AND MOLDING PRODUCT OF MULTILAYERED STRUCTURAL STYRENIC COPOLYMER 失效
公开(公告)号：JPH11240925A
公开(公告)日：1999-09-07
申请号：JP4312498
申请日：1998-02-25
申请人： HITACHI CHEMICAL CO LTD
发明人： YAMASHITA YUKIHIKO , SUZUMURA KOJI , TATEOKA SEISHU , KAWAHARA HISASHI
IPC分类号： C08L51/00 , C08F2/24 , C08F257/02 , C08F265/04 , C08F265/08 , C08F275/00 , C08F285/00 , C08F290/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a multilayered structural styrenic copolymer capable of providing a molding product excellent in transparency, color development and impact resistance, and further to obtain a molding product of the multilayered structural styrenic copolymer. SOLUTION: This method for producing a multilayered structural styrenic copolymer and its molded article comprises the following steps (1) to (5) [with the proviso that a vinylsilane- based compound in a proportion of >=0.1 wt.% is formulated at the following steps (1)-(5)]: (1) a step for carrying out an emulsion polymerization of (a) a monomer mixture containing styrene; (2) a step for carrying out the emulsion polymerization of (b) a monomer mixture in the presence of (A) a copolymer obtained by the step (1); (3) a step for carrying out the emulsion polymerization of (c) the monomer mixture containing the styrene in the presence of (B) the copolymer obtained in the step (2); (4) a step for carrying out the emulsion polymerization of (d) the compounded monomer mixture containing the styrene in the presence of (C) the copolymer obtained in the step (3); (5) a step for carrying out the emulsion polymerization of (e) the monomer mixture containing the styrene in the presence of (D) the copolymer obtained in the step (4) to provide (E) a copolymer.

10. 发明专利

JP2014049621A Processing tape for wafer and manufacturing method of processing tape for wafer 审中-公开
标题翻译： WAFER加工带和WAFER加工带的制造方法
公开(公告)号：JP2014049621A
公开(公告)日：2014-03-17
申请号：JP2012191671
申请日：2012-08-31
申请人： Hitachi Chemical Co Ltd , 日立化成株式会社
发明人： SAKUTA TATSUYA , SUZUMURA KOJI , IWANAGA YUKIHIRO
IPC分类号： H01L21/301 , H01L21/52
摘要： PROBLEM TO BE SOLVED: To provide a wafer processing tape which can prevent the fragments of an adhesive layer from adhering to a semiconductor chip when expanding, and to provide a manufacturing method of a wafer processing tape.SOLUTION: In a wafer processing tape 1, a seal 7 for preventing an adhesive layer 3 from scattering is provided on the outer edge side of a sticking region 3a to which a semiconductor wafer 11 is stuck. Consequently, the adhesive layer 3 can be prevented from being scattered by the seal 7, even if an impact of expansion is applied to a region which is not stuck to the semiconductor wafer 11, during an expand step for expanding the wafer processing tape 1 in the plane direction. Adhesion of the adhesive layer 3 to a semiconductor chip 14 can be prevented by preventing scattering of the adhesive layer 3, and thereby manufacturing yield of the semiconductor chip 14 can be enhanced.
摘要翻译：要解决的问题：提供一种晶片加工带，其可以防止粘合剂层的碎片在扩大时粘附到半导体芯片，并提供晶片处理带的制造方法。解决方案：在晶片处理带1中，在半导体晶片11被卡住的粘贴区域3a的外缘侧设置用于防止粘合剂层3散射的密封件7。因此，即使在对晶片处理带1进行扩展的扩展步骤期间，即使对未粘附到半导体晶片11的区域施加膨胀冲击，也可以防止粘合剂层3被密封件7散射平面方向。通过防止粘合剂层3的飞散，可以防止粘合剂层3与半导体芯片14的粘附，从而可以提高半导体芯片14的制造成品率。

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