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1. 发明专利

JP2000290097A PRODUCTION OF LARGE-SIZED CERIUM FLUORIDE CRYSTAL 失效
公开(公告)号：JP2000290097A
公开(公告)日：2000-10-17
申请号：JP10267999
申请日：1999-04-09
申请人： HIGH ENERGY ACCELERATOR RES , OYO KOKEN KOGYO KK
发明人： INAGAKI TAKAO , YOSHIMURA YOSHIO , MATSUMOTO GIICHI , MINAMI KAZUHIRO
IPC分类号： C30B11/00 , C30B11/14 , C30B29/12
摘要： PROBLEM TO BE SOLVED: To produce a large-sized high quality cerium fluoride single crystal by retaining a raw material from which cerium fluoride is crystallized by a pulling-down method, in an atmosphere of gaseous fluorine that is formed by decomposition of fluorine compounds each used as a scavenger, until the temperature of the raw material reaches its melting temperature, and thereafter growing cerium fluoride single crystal under vacuum, in a vacuum growth device. SOLUTION: In this production process described above: as the fluorine compounds, Teflon(R) (polytetrafluoroethylene) capable of being decomposed at a low temperature and lead fluoride capable of being decomposed at a high temperature are jointly used; until the raw material is completely melted, an inert gas is introduced into the vacuum growth device A, to prevent oxygen and moisture from entering into the growth device A from the outside during the temperature elevation period; during the crystal growth period, the atmosphere inside the vacuum growth device A is maintained under a high vacuum to stabilize the temperature gradient; and the cerium fluoride single crystal growth is performed by using multiple crucibles 4 which are placed in the vacuum growth device A and being several crystal growth crucibles, having seed crystal sections 4a each of which is placed at the bottom of the corresponding one of the crystal growth crucibles and used for receiving a seed crystal having the (110) plane.

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