会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明专利
    • パルス生成装置
    • JP2020010417A
    • 2020-01-16
    • JP2018126427
    • 2018-07-02
    • HIGH ENERGY ACCELERATOR RES ORGANIZATION
    • NAITO TAKASHI
    • H02M9/04H02M1/00
    • 【課題】サイラトロンの代替となる、高速スイッチング可能な、高電圧大電流パルスを生成するパルス生成装置を提供する。【解決手段】本発明は、複数のサイリスタが直列に接続され前記サイリスタをゲート電流ゼロでスイッチさせるアバランシェ回路と、前記アバランシェ回路の最下段にトリガー信号を供給するトリガー回路と、前記アバランシェ回路の複数の前記サイリスタに均等に印加電圧を供給する均等電圧供給回路からなり、前記アバランシェ回路の最下段に前記トリガー信号が入力されることによって、前記サイリスタがオン状態になり、前記アバランシェ回路が絶縁状態から低抵抗状態へ移行する前記スイッチング回路に、外部電源から直流高電圧が印加されることで、負荷に高電圧、大電流の高速パルスを生成することを特徴とするパルス生成装置とした。【選択図】図5
    • 6. 发明专利
    • PRODUCTION OF LARGE-SIZED CERIUM FLUORIDE CRYSTAL
    • JP2000290097A
    • 2000-10-17
    • JP10267999
    • 1999-04-09
    • HIGH ENERGY ACCELERATOR RESOYO KOKEN KOGYO KK
    • INAGAKI TAKAOYOSHIMURA YOSHIOMATSUMOTO GIICHIMINAMI KAZUHIRO
    • C30B11/00C30B11/14C30B29/12
    • PROBLEM TO BE SOLVED: To produce a large-sized high quality cerium fluoride single crystal by retaining a raw material from which cerium fluoride is crystallized by a pulling-down method, in an atmosphere of gaseous fluorine that is formed by decomposition of fluorine compounds each used as a scavenger, until the temperature of the raw material reaches its melting temperature, and thereafter growing cerium fluoride single crystal under vacuum, in a vacuum growth device. SOLUTION: In this production process described above: as the fluorine compounds, Teflon(R) (polytetrafluoroethylene) capable of being decomposed at a low temperature and lead fluoride capable of being decomposed at a high temperature are jointly used; until the raw material is completely melted, an inert gas is introduced into the vacuum growth device A, to prevent oxygen and moisture from entering into the growth device A from the outside during the temperature elevation period; during the crystal growth period, the atmosphere inside the vacuum growth device A is maintained under a high vacuum to stabilize the temperature gradient; and the cerium fluoride single crystal growth is performed by using multiple crucibles 4 which are placed in the vacuum growth device A and being several crystal growth crucibles, having seed crystal sections 4a each of which is placed at the bottom of the corresponding one of the crystal growth crucibles and used for receiving a seed crystal having the (110) plane.