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1. 发明专利

JP2008039417A Vehicle-mounted light detector 审中-公开
标题翻译：车载安全灯探测器
公开(公告)号：JP2008039417A
公开(公告)日：2008-02-21
申请号：JP2006210065
申请日：2006-08-01
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： YAMAGUCHI SEIJI
IPC分类号： G01J1/02 , G01J1/04
摘要： PROBLEM TO BE SOLVED: To provide a vehicle-mounted light detector capable of controlling light incident from a plurality of directions according to conditions bodily sensed by a person. SOLUTION: When only a light sensing area B positioned in front of a light detection area exhibits the maximum output and the entire output of the light sensing area provides a determination result indicating night or evening, it may be determined that light from a headlight of a following vehicle comes from a vehicle backside. One of adjacent light sensing areas B', B" is provided with a visible light cut filter FL, and a subtraction output therefrom indicates a light amount of visible light components. With a condition of the visible light excluding infrared light, because determination of illuminance of external light such as the headlight of the following vehicle, an electrotonic device such as an electrical anti-glare mirror can be controlled in a manner matching with the visible light bodily sensed by the person. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种车载光检测器，其能够根据人身体感测的条件来控制从多个方向入射的光。解决方案：当只有位于光检测区域前方的光感测区域B呈现最大输出，并且光感测区域的整个输出提供指示夜晚或夜间的确定结果时，可以确定来自后车的前大灯来自车背。相邻的感光区域B'，B“中的一个设置有可见光截止滤光器FL，并且其相减输出表示可见光分量的光量，由于除了红外线的可见光的条件，因为照度的确定可以以与人感觉到的身体的可见光相匹配的方式来控制诸如电防眩光镜的电子装置，例如（C）2008， JPO＆INPIT

2. 发明专利

JPH0476055B2 失效
公开(公告)号：JPH0476055B2
公开(公告)日：1992-12-02
申请号：JP23077884
申请日：1984-11-01
申请人： HAMAMATSU PHOTONICS KK
发明人： YAMAMOTO AKINAGA , TERADA YOSHITAKA , YAMAGUCHI SEIJI
IPC分类号： G01J1/02 , G01B7/00 , G01J1/24 , G01T1/24 , H01L21/66 , H01L31/115

3. 发明专利

JP2003224292A SEMICONDUCTOR PHOTODETECTOR 审中-公开
公开(公告)号：JP2003224292A
公开(公告)日：2003-08-08
申请号：JP2002022230
申请日：2002-01-30
申请人： HAMAMATSU PHOTONICS KK
发明人： TERADA YOSHITAKA , YAMAGUCHI SEIJI , YAMAMOTO TAKASHI
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor photodetector in which the light incident to a photodetecting area can be accurately controlled and a photodiode reduced in size is applied. SOLUTION: A first photodiode 15, a second photodiode 17 and a signal processing circuit 30 are integrated on a simple substrate. The photodiode 15 and the second photodiode 17 respectively have a light incident surface 152 and a light incident surface 172. An area of the surface 152 is 1/4 of that of the surface 172. An infrared ray transmitting film 154 for selectively transmitting an infrared ray (a light out of a visible range light of a long wavelength side) is formed on the surface 152 so as to be opposed to an overall surface 152 and an inner edge of an Al shielding film 16. The circuit 30 amplifies the output of the first photodiode 15 four times, and subtracts the output of the first photodiode 15 amplified four times from the output of the second photodiode 17. COPYRIGHT: (C)2003,JPO

4. 发明专利

JPH04342173A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04342173A
公开(公告)日：1992-11-27
申请号：JP11458191
申请日：1991-05-20
申请人： HAMAMATSU PHOTONICS KK
发明人： YAMAGUCHI SEIJI , SHIMIZU HIROMITSU , MASUDA HIROSHI
IPC分类号： H01L31/10
摘要： PURPOSE:To improve a manufacturing method for a semiconductor device having photodiodes. CONSTITUTION:Concerning a manufacturing method for a semiconductor device having photoelectric receiving elements (photodiodes) whose photoelectric receiving regions are formed in a Si single crystal substrate, the oxygen density between lattices in the above-mentioned Si single crystal substrate is made to be 1.1X10 /cm to 1.3X10 /cm .

5. 发明专利

JP2004214341A Semiconductor photo detection device 有权
公开(公告)号：JP2004214341A
公开(公告)日：2004-07-29
申请号：JP2002380620
申请日：2002-12-27
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： TERADA YOSHITAKA , YAMAGUCHI SEIJI , YAMAMOTO TAKASHI
IPC分类号： H01L31/10 , H01L31/0232
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor photo detection device which can realize desired spectral sensitivity characteristics.
SOLUTION: A first photo diode 15, a second photo diode 17, and a signal processing circuit 30 are integrated on a single substrate. The first photo diode 15 and the second photo diode 17 have a light incident face 152 and a light incident face 172, respectively. On the light incident face 152, an optical filter composed of an infrared light transmission resin film 154a and a red-color light transmission resin film 154b is formed. The infrared light transmission resin film 154a and the red-color light transmission resin film 154b are located adjacent to each other with small spacing, near a division line which passes the central point of the light incident face 152 and are parallel to two sides of the light incident face 152. The signal processing circuit 30 amplifies the output of the first photo diode 15 by k times, and subtracts the output of the first photo diode 15 amplified by k times from the output of the second photo diode 17.
COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明专利

JPH02251174A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02251174A
公开(公告)日：1990-10-08
申请号：JP7291389
申请日：1989-03-24
申请人： HAMAMATSU PHOTONICS KK
发明人： YAMAGUCHI SEIJI , SAWARA MASAAKI
IPC分类号： H01L31/10 , H01L27/14
摘要： PURPOSE:To increase the working speed of a photodetector, and to improve the high-frequency characteristics of the photodetector by setting the impurity concentration of the emitter of a reverse transistor in an IIL(Integrated Injection Logic) region independent of the concentration of an epitaxial layer. CONSTITUTION:An N well formed by an impurity region 15 is shaped so as to cover an internal base region 16, thus setting the impurity concentration of the emitter of a reverse transistor in an IIL region regardless of the impurity concentration of an epitaxial layer 13. Consequently, the impurity concentration of the impurity region 15 is set at a high value and the impurity concentration of the emitter can be increased, and the epitaxial layer 13 can be shaped at high resistivity as 40OMEGA.cm. As a result, the impurity concentration of the epitaxial layer 13 interposed between the impurity region 21 of a photodiode formed in a light-receiving circuit region and an impurity region 25 is lowered, and junction capacitance generated between the anode 21 and the cathode 13 is reduced. Accordingly, the photodiode is operated at high speed, and the high- frequency characteristics of the photodiode are improved.

7. 发明专利

JPH02251170A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02251170A
公开(公告)日：1990-10-08
申请号：JP7291289
申请日：1989-03-24
申请人： HAMAMATSU PHOTONICS KK
发明人： YAMAGUCHI SEIJI , SAWARA MASAAKI
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8226 , H01L27/082 , H01L29/732
摘要： PURPOSE:To improve the current amplification factor of the reverse transistor of an IIL by setting the impurity concentration of the emitter of the reverse transistor in an IIL(Integrated Injection Logic) region independent of the concentration of an epitaxial layer. CONSTITUTION:An N type impurity region 15 is formed onto an epitaxial layer 13, and the impurity region 15 is used as an N well corresponding to the emitter of the reverse transistor of an IIL. Since the N well shaped by the impurity region 15 is formed so as to cover an internal base region 16 at that time, the impurity concentration of the emitter of the reverse transistor in an IIL region can be set regardless of the impurity concentration of the epitaxial layer 13. Consequently, the impurity concentration of the impurity region 15 is set at a high value and the impurity concentration of the emitter can be increased, and the epitaxial layer 13 can be shaped at high resistivity as 4OMEGA.cm. Accordingly, a current amplification factor is improved.

8. 发明专利

JPS62203346A SEMICONDUCTOR POSITION DETECTOR 失效
公开(公告)号：JPS62203346A
公开(公告)日：1987-09-08
申请号：JP4658186
申请日：1986-03-04
申请人： HAMAMATSU PHOTONICS KK
发明人： SAKAKIBARA MASAYUKI , YAMAGUCHI SEIJI
IPC分类号： H01L21/66 , H01L21/67 , H01L21/68 , H01L31/16
摘要： PURPOSE:To obtain the semiconductor position detecting device having low degree of resistance variation in a semiconductor region and high degree of accuracy in detection of position by a method wherein the orientation of crystallization of a semiconductor substrate is selected in the direction where the piezoelectric resistance effect of the resistance layer formed on the semiconductor region will be brought to the minimum. CONSTITUTION:A resistance layer 2 of P-type high resistivity is formed along the (100) direction within the orientational direction (100) on the plane of the N-type high resistance Si substrate 1 of the planar orientation (100). An N region 3, to be used to pick out an electrode, and an electrode 13 are formed on the back side of the substrate 1, and they are adhered on a supporting substrate 11 through the intermediary of a solder layer 19. The surface of the substrate 1 is coated with an insulating layer 7 having an electrode window, current lead-out electrodes 14 and 15 are formed on P type regions 4 and 5, and they are coated with sealing epoxy resin 17. In this semiconductor position detecting device, as the orientation of crystallization of the substrate 1 in parallel with the direction, where the gauge factor of piezoelectric resistance effect becomes the minimum, is selected on the resistance layer 2, the variation in resistance is small even when the length of the resistance layer 2 is changed due to stress, and the degree of lowering in accuracy in detection of position can be made small.

9. 发明专利

JPS61108930A Semiconductor incident position detector for detecting incident position of corpuscular beam or the like 失效
标题翻译：用于检测爆炸位置的半导体事件位置检测器或其类似物
公开(公告)号：JPS61108930A
公开(公告)日：1986-05-27
申请号：JP23077884
申请日：1984-11-01
申请人： Hamamatsu Photonics Kk
发明人： YAMAMOTO AKINAGA , TERADA YOSHITAKA , YAMAGUCHI SEIJI
IPC分类号： G01J1/02 , G01B7/00 , G01J1/24 , G01T1/24 , H01L21/66 , H01L31/115
CPC分类号： H01L31/115
摘要： PURPOSE:To reduce the leakage of current generated by corpuscular beams by forming the 2nd conductive resistor layer on the surface of the 1st conductive semiconductor substrate and then forming an incident surface for corpuscular beams on the opposite side. CONSTITUTION:An n type silicon wafer is used as the semiconductor substrate 11, an arc-like hole is formed on the surface of the substrate 11 by photolithography and boron is ion-implanted into the hole to form a border resistor part 13. Boron is ion-implanted into a part surrounded by the border resistance part 13 to form the resistor layer 14. In addition, aluminum electrodes 15 are formed on the four corners of the border resistor part 13. Phosphorus is ion-implanted to the opposite surface to the substrate 11 to form an n part 12 and gold is evaporated on the peripheral part to form a back electrode. A corpuscular beam or the like is made incident upon the n part 12 and outputted current is detected by the divided electrodes 15. Since the incident surface of the corpuscular beams is formed on the back of the resistor layer 14 as the n part 12, current leakage is reduced, the change of positional output characteristics or the deterioration of sensitivity can be reduced by irradiating the corpuscular beams.
摘要翻译：目的：通过在第一导电半导体衬底的表面上形成第二导电电阻层，然后在相对侧形成用于红细胞束的入射表面，以减少由粒子束产生的电流的泄漏。构成：使用n型硅晶片作为半导体基板11，通过光刻法在基板11的表面上形成弧形孔，并将硼离子注入到孔中以形成边界电阻部分13.硼是离子注入到由边界电阻部分13包围的部分中以形成电阻层14.此外，在边界电阻部分13的四个角上形成铝电极15.将磷离子注入到与电阻层13相反的表面上衬底11以形成n + 12部分，并且在周边部分上蒸发金，形成背电极。粒子束等入射到n +部分12上，并且由分割电极15检测出输出的电流。由于在电阻层14的背面形成有粒子束的入射面， +>第12部分，电流泄漏减少，通过照射红细胞束可以减少位置输出特性的变化或灵敏度的劣化。

10. 发明专利

JPH05323220A SYNCHRONIZATION DETECTING DEVICE 失效
公开(公告)号：JPH05323220A
公开(公告)日：1993-12-07
申请号：JP12768992
申请日：1992-05-20
申请人： HAMAMATSU PHOTONICS KK
发明人： TERADA YOSHITAKA , YAMAGUCHI SEIJI , MEGURI SHINTARO
IPC分类号： G01J1/02 , G01J1/44 , G01R13/14 , G02B26/10 , H04N1/04 , H04N1/113
摘要： PURPOSE:To reduce the time fluctuation of synchronization timing due to the variation of light quantity without regarding whether the scanning direction of light beam is forward or back ward and to obtain the synchronization detecting device without faulty operation against noises. CONSTITUTION:The light receiving surface of photodiodes PD1-PD3 is disposing along the scanning direction of light beam. An amplifier A, amplifying the output current of photodiodes, executing I/V conversion and outputting a voltage V1 is connected to the anodes of photodiodes PD1, PD3 at both ends and an amplifier A2 outputting a voltage V2 is similarly connected to the anode of the PD2 in the center. A comparator C outputting a scanning timing signal V0 by comparing the output voltage V1 with V2 is also connected. Using this circuit, the fluctuation in synchronization timing is eliminated even when the variation in light quantity is present, this synchronization timing is not affected by the influence of the sacanning direction of light beam and the synchronization detecting device unnecessitating the change of a logic circuit although the change is required previously.

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