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1. 发明专利

JP2013102195A Surface protective tape used for semiconductor wafer backgrinding and base film for surface protective tape 有权
标题翻译：用于表面保护带的半导体波形贴片和基膜的表面保护带
公开(公告)号：JP2013102195A
公开(公告)日：2013-05-23
申请号：JP2013003821
申请日：2013-01-11
申请人： Gunze Ltd , グンゼ株式会社 , Nitto Denko Corp , 日東電工株式会社
发明人： FUNAZAKI KOJI , KOJIMA HISATOMI , HAYASHI NAOYA , YOKOI MASAYUKI
IPC分类号： H01L21/304 , C09J7/02
CPC分类号： H01L21/304 , B32B27/32 , C09J7/243 , C09J7/29 , C09J2201/162 , C09J2201/622 , C09J2203/326 , C09J2205/114 , C09J2423/046 , C09J2431/006 , C09J2433/006 , H01L21/67132 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , Y10T428/24355
摘要： PROBLEM TO BE SOLVED: To provide a surface protective tape for a semiconductor wafer, which has uniform thickness tolerance, which is excellent in surface smoothness without blocking and the like, and provide a base film for the surface protective tape.SOLUTION: A base film of a surface protective tape of a semiconductor wafer comprises at least one layer of a layer including a polyethylene resin and satisfying the following requirements: (1) surface roughness (Ra) of both surfaces of the base film measured with reference to JIS B0601 is 0.8 μm and less, and surface roughness (Ra) of at least one surface is 0.05 μm and over; and (2) a difference between a maximum value and a minimum value of a thickness of the base film is 4 μm and less. And a surface protective tape of the semiconductor wafer, which includes the base film and an adhesive layer is provided.
摘要翻译：要解决的问题：为了提供具有均匀厚度公差的半导体晶片的表面保护带，其表面平滑度优异而没有阻塞等，并且提供了用于表面保护带的基膜。解决方案：半导体晶片的表面保护带的基膜包括至少一层包括聚乙烯树脂的层，并且满足以下要求：（1）基膜的两个表面的表面粗糙度（Ra）参照JIS B0601测定的值为0.8μm以下，至少一面的表面粗糙度（Ra）为0.05μm以上; 和（2）基膜的厚度的最大值和最小值之间的差为4μm以下。并且提供了包括基膜和粘合剂层的半导体晶片的表面保护带。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013202989A Gas barrier film and method for manufacturing the same 审中-公开
标题翻译：气体阻隔膜及其制造方法
公开(公告)号：JP2013202989A
公开(公告)日：2013-10-07
申请号：JP2012076174
申请日：2012-03-29
申请人： Gunze Ltd , グンゼ株式会社
发明人： KIMURA KEISAKU , KOJIMA HISATOMI , UENO YASUHIRO
IPC分类号： B32B5/28 , B32B5/02 , B32B27/00
摘要： PROBLEM TO BE SOLVED: To provide a gas barrier film which has high dimension stability and high gas barrier properties, while having flexibility.SOLUTION: A gas barrier film 10 includes a transparent composite base 1 which has an inorganic fiber cloth and a transparent resin made to impregnating the inorganic fiber cloth, and a resin layer 2 which is laid on the transparent composite base 1 and of which the main constituent is a cyclic olefin resin.
摘要翻译：要解决的问题：提供具有高尺寸稳定性和高阻气性的气体阻隔膜，同时具有柔软性。解决方案：阻气膜10包括透明复合基材1，其具有无机纤维布和制成的透明树脂浸渍无机纤维布，以及铺设在透明复合基材1上的树脂层2，其主要成分是环状烯烃树脂。

3. 发明专利

JP2011218586A Transparent gas-barrier film 审中-公开
标题翻译：透明气体阻隔膜
公开(公告)号：JP2011218586A
公开(公告)日：2011-11-04
申请号：JP2010087427
申请日：2010-04-06
申请人： Gunze Ltd , グンゼ株式会社
发明人： NODA KAZUHIRO , KOJIMA HISATOMI , UENO YASUHIRO , KIMURA KEISAKU
IPC分类号： B32B27/04
摘要： PROBLEM TO BE SOLVED: To provide a gas-barrier film which suppresses an impurity gas derived from a resin substrate even under high-temperature conditions, demonstrates good heat resistance, and can expect good gas-barrier characteristics over a long period of time.SOLUTION: A gas-barrier film 20 is deposited on one side of a base material film 10, and a transparent conductive film 30 is deposited on the other side to obtain the gas-barrier film 1. A quartz glass cloth 11 is impregnated with a transparent ene-thiol type ultraviolet curable resin or a transparent thermosetting resin to constitute the base material film 10.
摘要翻译：要解决的问题：即使在高温条件下也能够提供抑制源自树脂基板的杂质气体的阻气膜，显示出良好的耐热性，并且能够期望长时间的良好的气体阻隔特性时间。解决方案：在基材膜10的一侧上沉积阻气膜20，在另一侧上沉积透明导电膜30以获得阻气膜1.石英玻璃布11是用透明烯 - 硫醇型紫外线固化树脂或透明热固性树脂浸渍以构成基材膜10.版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2007280976A Base film for surface protection tape used for grinding rear face of semiconductor wafer 有权
标题翻译：用于研磨半导体晶片表面的表面保护带的基膜
公开(公告)号：JP2007280976A
公开(公告)日：2007-10-25
申请号：JP2006101333
申请日：2006-04-03
申请人： Gunze Ltd , グンゼ株式会社
发明人： FUNAZAKI KOJI , KOJIMA HISATOMI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To prevent the warpage of a semiconductor wafer after a grinding process, and to improve thickness precision.
SOLUTION: In a surface protection tape used when grinding the rear face of a semiconductor wafer, a base film for surface protection tape satisfying the following requirements (1), (2) has a center layer containing an annular olefin-based resin, and front/rear layers containing a branch-like low-density polyethylene resin. In measurement conforming to JIS B 0601, surface roughness Ra of both the front and rear of the base film is not more than 0.8 μm and that Ra of at least one surface is not less than 0.05 μm (1). The value of thickness (maximum-minimum) per 12 inches in diameter is not more than 4 μm (2).
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了防止研磨过程之后的半导体晶片的翘曲，并提高厚度精度。解决方案：在研磨半导体晶片的背面时使用的表面保护带中，满足以下要求（1），（2）的表面保护带用基膜具有含有环状烯烃系树脂的中心层，以及包含支链状低密度聚乙烯树脂的前/后层。在符合JIS B 0601的测量中，基膜的前后的表面粗糙度Ra不大于0.8μm，并且至少一个表面的Ra不小于0.05μm（1）。每12英寸直径的厚度（最大 - 最小值）不超过4μm（2）。版权所有（C）2008，JPO＆INPIT

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