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    • 1. 发明专利
    • Field emitter based electron source with minimized beam emitance growth
    • 具有最小化光束发射增长的基于场发射器的电子源
    • JP2009238750A
    • 2009-10-15
    • JP2009069555
    • 2009-03-23
    • General Electric Co ゼネラル・エレクトリック・カンパニイGeneral Electric Company
    • ZOU YUNCAO YANGINZINNA LOUIS PAULNECULAES VASILE BOGDAN
    • H01J29/48H01J1/304
    • H01J35/065H01J2235/062
    • PROBLEM TO BE SOLVED: To provide a system and a method for limiting emittance growth in an electron beam. SOLUTION: This system (10) includes an emitter element (26) configured to generate the electron beam (28) and an extraction electrode (20) positioned adjacent to the emitter element (26) to extract the electron beam (28) out therefrom. The extraction electrode (20) includes an opening (24) therethrough. This system (10) also includes a meshed grid (32) disposed in the opening (24) of the extraction electrode (20) to enhance intensity and uniformity of an electric field at a surface of the emitter element (26) and an emittance compensation electrode (ECE) (34) positioned adjacent to the meshed grid (32) on the opposite side of the emitter element (26) side of the meshed grid (32) and configured to control emittance growth of the electron beam (28). COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种用于限制电子束中的发射增长的系统和方法。 解决方案:该系统(10)包括被配置为产生电子束(28)的发射极元件(26)和邻近发射极元件(26)定位以提取电子束(28)的引出电极(20) 从中出来。 提取电极(20)包括通过其的开口(24)。 该系统(10)还包括设置在引出电极(20)的开口(24)中的网状网格(32),以增强在发射体元件(26)的表面处的电场的强度和均匀性,并且发射率补偿 电极(ECE)(34),位于与网状网格(32)的发射体元件(26)侧相对的网状网格(32)附近,并且被配置为控制电子束(28)的发射增长。 版权所有(C)2010,JPO&INPIT