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1. 发明专利

JP2013235685A Negative electrode material for lithium ion secondary batteries, negative electrode for lithium ion secondary batteries arranged by use thereof, and lithium ion secondary battery arranged by use thereof 审中-公开
标题翻译：用于锂离子二次电池的负极电极材料，其使用的锂离子二次电池的负极和其使用的锂离子二次电池
公开(公告)号：JP2013235685A
公开(公告)日：2013-11-21
申请号：JP2012106320
申请日：2012-05-07
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社 , Furukawa Battery Co Ltd:The , 古河電池株式会社
发明人： NISHIMURA TAKESHI , NISHIKUBO HIDEO , SHIMIZU YUTAKA , HIGAMI TOSHIYA , KUBOTA MASAAKI , ABE HIDETOSHI
IPC分类号： H01M4/38 , H01M4/36 , H01M10/052
CPC分类号： Y02P70/54
摘要： PROBLEM TO BE SOLVED: To provide a negative electrode material for lithium ion secondary batteries which achieves a high capacity and good cycle characteristic.SOLUTION: The negative electrode material for lithium ion secondary batteries comprises: active material particle containing at least one element A selected from a group consisting of Si, Sn, Al, Pb, Sb, Bi, Ge, In, and Zn. The active material particle is covered with a binding agent layer. When the volume of the active material particle before charging is denoted by V, and the volume after the charging is denoted by V, and the reversible shrinkage degree of the binding agent is denoted by ε[%], the following relational expression holds: ε≥((V/V)-1)×100.
摘要翻译：要解决的问题：提供一种实现高容量和良好循环特性的锂离子二次电池用负极材料。解决方案：锂离子二次电池用负极材料包括：含有至少一种元素A的活性物质粒子，其选自由Si，Sn，Al，Pb，Sb，Bi，Ge，In和Zn组成的组。活性物质颗粒被粘合剂层覆盖。当充电前的活性物质粒子的体积用V表示，充电后的体积用V表示，结合剂的可逆收缩率用＆egr [％]表示，以下的关系式成立： ≥（（V / V）-1）×100。

2. 发明专利

JP2014103052A Negative electrode for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery using the same and manufacturing method therefor 审中-公开
标题翻译：用于非电解电解质二次电池和非电解电解质二次电池的负极电极及其制造方法
公开(公告)号：JP2014103052A
公开(公告)日：2014-06-05
申请号：JP2012255767
申请日：2012-11-22
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： NISHIMURA TAKESHI , UCHIKOSHI AKINARI , NISHIKUBO HIDEO , SHIMIZU YUTAKA , NAKAMURA KENICHI , HIGAMI TOSHIYA
IPC分类号： H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/38 , H01M4/62
CPC分类号： Y02P70/54
摘要： PROBLEM TO BE SOLVED: To obtain a negative electrode for nonaqueous electrolyte secondary battery having excellent initial efficiency and cycle characteristics, in a negative electrode containing a high capacity active material such as Si, Sn, or the like.SOLUTION: In a negative electrode for nonaqueous electrolyte secondary battery having an active material layer containing at least a negative electrode active material and a coating binder on a collector, the negative electrode active material has active material particles, and a polymer coat covering the surface thereof, the active material particles contains at least one element selected from a group consisting of Si, Sn, Al, Pb, Sb, Bi, Ge, In, Zn, the polymer coat contains an aqueous binder, and the coating binder contains an organic solvent binder.
摘要翻译：要解决的问题：为了获得具有优异的初始效率和循环特性的非水电解质二次电池用负极，在含有诸如Si，Sn等的高容量活性物质的负极中。具有至少含有负极活性物质的活性物质层和集电体上的涂料粘合剂的非水电解质二次电池，所述负极活性物质具有活性物质粒子和覆盖其表面的聚合物涂层，所述活性物质粒子含有选自由Si，Sn，Al，Pb，Sb，Bi，Ge，In，Zn组成的组中的至少一种元素，聚合物涂层含有水性粘合剂，涂层粘合剂含有有机溶剂粘合剂。

3. 发明专利

JP2003324246A Semiconductor laser device, semiconductor laser module, optical fiber amplifier, and method for selecting semiconductor laser device 审中-公开
标题翻译：半导体激光器件，半导体激光器模块，光纤放大器和选择半导体激光器件的方法
公开(公告)号：JP2003324246A
公开(公告)日：2003-11-14
申请号：JP2003049927
申请日：2003-02-26
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： SHIMIZU YUTAKA , YOSHIDA JIYUNJI , TSUKIJI NAOKI , OKI YASUSHI
IPC分类号： G02B6/42 , H01S3/10 , H01S3/30 , H01S5/125
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor laser device prevented from generating induced Brillouin scattering. SOLUTION: An n-InP buffer layer 2, a GRIN-SCH-MQW active layer 3 and a p-InP spacer layer 4 are laminated on the surface of an n-InP substrate 1. A p-InP blocking layer 8 and an n-InP blocking layer 9 are laminated adjacently to the upper region of the buffer layer 2, the active layer 3 and the spacer layer 4. A p-InP clad layer 6, a p-GaInAsP contact layer 7 and a p-side electrode 10 are laminated on the spacer layer 4 and the blocking layer 9, and an n-side electrode 11 is arranged on the rear surface of the substrate 1. A diffraction grating 13 is arranged in the spacer layer 4 to select light having ten or more, preferably eighteen or more, oscillation vertical modes each having a differential value of 10 dB or less relative to the maximum light intensity of the oscillation vertical mode. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：为了获得防止产生感应布里渊散射的半导体激光器件。解决方案：n-InP缓冲层2，GRIN-SCH-MQW有源层3和p-InP间隔层4层压在n-InP衬底1的表面上.P-InP阻挡层8 并且n-InP阻挡层9与缓冲层2，有源层3和间隔层4的上部区域相邻层叠.P-InP包覆层6，p-GaInAsP接触层7和p- 侧面电极10层压在隔离层4和阻挡层9上，并且n侧电极11设置在基板1的背面上。衍射光栅13布置在间隔层4中以选择具有十个或更多，优选十八个或更多个振荡垂直模式，其相对于振荡垂直模式的最大光强度具有10dB或更小的差分值。版权所有（C）2004，JPO

4. 发明专利

JP2004055623A Semiconductor laser, semiconductor laser module, and raman amplifier using the module 审中-公开
公开(公告)号：JP2004055623A
公开(公告)日：2004-02-19
申请号：JP2002207495
申请日：2002-07-16
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： OKI YASUSHI , TSUKIJI NAOKI , YOSHIDA JIYUNJI , SHIMIZU YUTAKA , HAYAMIZU NAOKI
IPC分类号： G02F1/35 , H01S5/062
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser that can obtain amplified signal light having a small RIN value, and to provide a semiconductor laser module and a Raman amplifier, using the module. SOLUTION: The semiconductor laser has a GRIN-SCH-MQW active layer 3 formed between an emitting-side reflection film 15 provided on its laser light-emitting edge and a reflection film 14 provided on its laser light-reflecting edge and outputs laser light, in a plurality of longitudinal oscillation modes. The semiconductor laser is also provided with a modulation signal impressing section 22, which generates a modulation signal for modulating a bias current injected into the GRIN-SCH-MQW active layer 3 and superimposes the modulation signal upon the bias current. The modulation signal impressing section 22 reduces the RIN after transmission, by giving return loss of the stimulated Brillouin scattering, having a value which is equal to or smaller than a value obtained, by adding 2dB to the level of the Rayleigh scattering through modulating the laser light. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2004055622A Semiconductor laser, semiconductor laser module, and optical fiber amplifier 审中-公开
公开(公告)号：JP2004055622A
公开(公告)日：2004-02-19
申请号：JP2002207494
申请日：2002-07-16
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： OKI YASUSHI , TSUKIJI NAOKI , YOSHIDA JIYUNJI , SHIMIZU YUTAKA , HAYAMIZU NAOKI
IPC分类号： H01S3/30 , H01S5/125
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor laser which emits a laser light, that does not increase in relative intensity noise after the light, is transmitted for a prescribed distance. SOLUTION: An n-type InP buffer layer 2, a GRIN-SCH-MQW active layer 3, and a p-type InP spacer layer 4 are laminated on an n-type InP substrate 1. Then a p-type InP blocking layer 8 and an n-type InP blocking layer 9 are laminated on the substrate 1 adjacently to the upper region of the buffer layer 2, active layer 3, and spacer layer 4. In addition, a p-type InP clad layer 6, a p-type GaInAsP contact layer 7, and a p-side electrode 10 are laminated on the spacer layer 4 and blocking layer 9 and an n-side electrode 11 is arranged on the rear surface of the substrate 1. Moreover, a diffraction grating 13 is arranged in the spacer layer 4. The grating 13 selects the laser light which only has 60 or fewer longitudinal oscillation modes, having differential values of ≤10 dB with respect to the maximum intensity. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2003338659A Semiconductor laser device, semiconductor laser module and raman amplifier using it 有权
标题翻译：半导体激光器件，半导体激光器模块和拉曼放大器
公开(公告)号：JP2003338659A
公开(公告)日：2003-11-28
申请号：JP2002350145
申请日：2002-12-02
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： YOSHIDA JIYUNJI , HAYAMIZU NAOKI , KIMURA TOSHIO , TSUKIJI NAOKI , SHIMIZU YUTAKA
IPC分类号： G02B6/42 , G02F1/35 , H01S3/30 , H01S5/042 , H01S5/06 , H01S5/0625 , H01S5/125
摘要： PROBLEM TO BE SOLVED: To stably and highly effectively emit a laser beam of a desired oscillation wavelength which is proper for an excitation light source such as a Raman amplifier. SOLUTION: The semiconductor laser device has a diffraction grating 13 partially provided along the vicinity of an active layer formed between an emission-side reflection film 15 provided to an emission edge face of a laser beam and the opposite edge face of the laser beam and emits the laser beam having a plurality of oscillation vertical modes according to wavelength selectivity by at least the diffraction grating 13. In the semiconductor laser device, a modulation frequency signal which modulates a bias current injected to the active layer is generated. It has a modulation signal applying part 22 which superposes the modulation frequency signal on the bias current. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了稳定且高效地发射适合于诸如拉曼放大器的激发光源的期望振荡波长的激光束。解决方案：半导体激光器件具有沿着激光束的发射边缘面上设置的发射侧反射膜15和激光的相对边缘面之间形成的有源层附近部分设置的衍射光栅13 并且通过至少衍射光栅13根据波长选择性发射具有多个振荡垂直模式的激光束。在半导体激光器件中，产生调制注入有源层的偏置电流的调制频率信号。它具有将调制频率信号叠加在偏置电流上的调制信号施加部分22。版权所有（C）2004，JPO

7. 发明专利

JP2003283036A Semiconductor laser module and raman amplifier employing the same 审中-公开
标题翻译：半导体激光模块和拉曼放大器
公开(公告)号：JP2003283036A
公开(公告)日：2003-10-03
申请号：JP2002233967
申请日：2002-08-09
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： SHIMIZU YUTAKA , TERADA KOHEI , TANIGUCHI HIDEHIRO , TSUKIJI NAOKI , OKI YASUSHI , YOSHIDA JIYUNJI , KIMURA TOSHIO
IPC分类号： G02B6/42 , G02F1/35 , H01S3/094 , H01S3/10 , H01S3/30 , H01S5/022 , H01S5/024 , H01S5/12 , H01S5/34 , H04B10/2507 , H04B10/29 , H04B10/294 , H04B10/16 , H04B10/17
CPC分类号： B82Y20/00 , G02B6/4206 , H01S3/094011 , H01S3/302 , H01S5/02248 , H01S5/02284 , H01S5/02296 , H01S5/02415 , H01S5/0683 , H01S5/1092 , H01S5/12 , H01S5/146 , H01S5/227 , H01S5/3408 , H01S2301/02
摘要： PROBLEM TO BE SOLVED: To provide a Raman amplifier employing a semiconductor laser module suitable for the light source of a front-exiting Raman amplifier of low RIN. SOLUTION: In the semiconductor laser module 100 equipped with a Fabry- Perot type semiconductor laser element 180, an optical fiber 101, whose incident surface is ground, is fixed so as to have a predetermined angle with respect to the optical axis of incident laser light. Further, non-reflective films 102, 104, 106 are formed respectively on the incident surface of the optical fiber 101, a first lens 103 and a second lens 105. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种拉曼放大器，采用适用于低RIN的前向拉曼放大器的光源的半导体激光器模块。解决方案：在配备有法布里 - 珀罗型半导体激光器元件180的半导体激光器模块100中，其入射表面被研磨的光纤101被固定成相对于光纤的光轴具有预定的角度入射激光。此外，非反射膜102,104,106分别形成在光纤101的入射表面上，第一透镜103和第二透镜105上。（C）2004，JPO

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