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    • 1. 发明专利
    • Non-volatile semiconductor memory and its writing method
    • 非挥发性半导体存储器及其写入方法
    • JP2007088349A
    • 2007-04-05
    • JP2005277712
    • 2005-09-26
    • Fujitsu LtdTokyo Institute Of Technology国立大学法人東京工業大学富士通株式会社
    • CROSS JEFFREY SCOTTWAKITANI NAOKISHINOZAKI KAZUO
    • H01L27/10H01L45/00H01L49/00
    • PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory which is excellent in a matching ability with a CMOS process and can operate in lower driving voltage, and its writing method for a non-volatile memory which uses a resistance memory element storing a plurality of resistance states of different resistance values. SOLUTION: The non-volatile semiconductor memory includes an insulating layer 38 which is composed of an oxide insulating material exhibiting oxygen-ion conductivity by applying an electric field, and a resistance memory element 42 which has electrodes 36, 40 sandwiching the insulating layer 38; and stores a low resistance state or a high resistance state in the resistance memory element. The non-volatile semiconductor memory is changed from a low resistance state to a high resistance state, by applying an electric field between the electrodes 36, 40 and by oxidizing the conductive material composing the electrode 36 with oxygen ions in the insulating layer 36. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种与CMOS工艺的匹配能力优异并且可以在较低驱动电压下工作的非易失性半导体存储器及其使用电阻存储器的非易失性存储器的写入方法 元件存储不同电阻值的多个电阻状态。 解决方案:非易失性半导体存储器包括由通过施加电场而显示出氧离子传导性的氧化物绝缘材料构成的绝缘层38,以及电阻存储元件42,其具有夹着绝缘体的电极36,40 38层; 并且在电阻存储元件中存储低电阻状态或高电阻状态。 通过在电极36,40之间施加电场,并且通过在绝缘层36中用氧离子氧化构成电极36的导电材料,将非易失性半导体存储器从低电阻状态改变为高电阻状态。 P>版权所有(C)2007,JPO&INPIT