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1. 发明专利

JP2002367988A Composite integrated circuit and manufacturing method therefor 审中-公开
标题翻译：复合集成电路及其制造方法
公开(公告)号：JP2002367988A
公开(公告)日：2002-12-20
申请号：JP2001177467
申请日：2001-06-12
申请人： Fuji Electric Corp Res & Dev Ltd , National Institute For Materials Science , Tokyo Inst Of Technol , 東京工業大学長 , 株式会社富士電機総合研究所 , 独立行政法人物質・材料研究機構
发明人： KOINUMA HIDEOMI , KAWASAKI MASASHI , CHIKYO TOYOHIRO , YONEZAWA YOSHIYUKI , KONISHI YOSHINORI
IPC分类号： H01L21/02 , H01L21/316 , H01L21/822 , H01L25/18 , H01L27/04 , H01L27/06
CPC分类号： H01L27/0694 , H01G4/33 , H01G4/40 , H01L21/31691 , H01L21/8221
摘要： PROBLEM TO BE SOLVED: To realize practical use of an oxide thin film by growing the oxide thin film with superior crystallinity on a silicon substrate and increasing the degree of freedom for selecting the substrate.
SOLUTION: A MOS circuit and a thin film capacitor are individually formed, and two substrates are bonded with epoxy resin and wired with a buried wiring member 10 like Poly-Si to constitute a composite circuit package. In this case, an Si (110) substrate with plane orientation different from an IC-side substrate 100 is used as the second substrate 1a. A dielectric layer 3 is formed by sputtering and the like on the Si (110) substrate with termination treatment. After the dielectric layer 3 is formed, an upper electrode 4 is formed, and then a thin film coil 7 is formed on the upper electrode 4. The space among the coil conductors and the upper space are filled with insulating magnetic gel 9 and molded with a molding layer 14. Then, the buried wiring 10 is jointed to the center of the coil to finish the thin-film coil 7 and the composite integrated circuit.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：通过在硅衬底上生长具有优异结晶度的氧化物薄膜并增加用于选择衬底的自由度来实现氧化物薄膜的实际应用。解决方案：分别形成MOS电路和薄膜电容器，并且两个基板与环氧树脂接合并与诸如Poly-Si的埋入布线构件10布线以构成复合电路封装。在这种情况下，使用具有与IC侧基板100不同的平面取向的Si（110）基板作为第二基板1a。在Si（110）衬底上通过溅射等形成电介质层3并进行终止处理。在形成电介质层3之后，形成上电极4，然后在上电极4上形成薄膜线圈7.线圈导体和上部空间之间的空间填充有绝缘磁性凝胶9，并用然后，将掩埋布线10接合到线圈的中心，以完成薄膜线圈7和复合集成电路。

2. 发明专利

JP2002367989A Oxide dielectric thin film and manufacturing method therefor 审中-公开
标题翻译：氧化物电介质薄膜及其制造方法
公开(公告)号：JP2002367989A
公开(公告)日：2002-12-20
申请号：JP2001177468
申请日：2001-06-12
申请人： Fuji Electric Corp Res & Dev Ltd , National Institute For Materials Science , Tokyo Inst Of Technol , 東京工業大学長 , 株式会社富士電機総合研究所 , 独立行政法人物質・材料研究機構
发明人： KOINUMA HIDEOMI , KAWASAKI MASASHI , CHIKYO TOYOHIRO , YONEZAWA YOSHIYUKI
IPC分类号： H01L21/316 , H01B3/12 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To realize practical use of an oxide thin film by growing the oxide thin film with superior crystallinity on a silicon substrate and preventing the generation of an interface SiO
2 layer.
SOLUTION: A conductive buffer layer 2 is formed as a lower electrode on a conductive Si substrate 1, and a dielectric layer 3 and an upper electrode layer 4 are formed sequentially to from a capacitor. When a perovskite type oxide dielectric thin film expressed by ATiO
3 , an electron fed from oxygen deficiency caused by low oxygen partial pressure is trapped by adding excessively Fe with smaller valence number than tetravalent Ti to increase the breakdown strength.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：通过在硅衬底上生长具有优异结晶度的氧化物薄膜并防止产生界面SiO 2层，实现氧化物薄膜的实际应用。解决方案：在导电Si衬底1上形成导电缓冲层2作为下电极，并且从电容器依次形成电介质层3和上电极层4。当由ATiO3表示的钙钛矿型氧化物电介质薄膜，由低氧分压引起的缺氧引起的电子通过以比四价Ti更小的价数添加过量的Fe而被捕获以增加击穿强度。

3. 发明专利

JP2004111883A Thin film element and manufacturing method thereof 有权
公开(公告)号：JP2004111883A
公开(公告)日：2004-04-08
申请号：JP2002276205
申请日：2002-09-20
申请人： Fuji Electric Advanced Technology Co Ltd , National Institute For Materials Science , Tokyo Inst Of Technol , 富士電機アドバンストテクノロジー株式会社 , 東京工業大学長 , 独立行政法人物質・材料研究機構
发明人： KOINUMA HIDEOMI , SONG JEONG-HWAN , CHIKYO TOYOHIRO , RYU EISO , AHMET PARHAT , KONISHI YOSHINORI , YONEZAWA YOSHIYUKI
IPC分类号： C30B29/10 , C23C14/06 , C23C16/34 , C30B23/02 , C30B29/38 , H01L21/20 , H01L21/205 , H01L21/363 , H01L29/20 , H01L29/22 , H01L29/26 , H01L29/267
CPC分类号： H01L29/267 , C30B23/02 , C30B29/46 , H01L21/02381 , H01L21/02458 , H01L21/02474 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L29/2003 , H01L29/22 , H01L33/28
摘要： PROBLEM TO BE SOLVED: To form an epitaxial thin film of a metallic sulfide directly on a Si single crystal substrate in the case of manufacturing a compound thin film element having ionic bonds on the Si single crystal substrate. SOLUTION: A layer 2 can be formed by utilizing a substrate 1 obtained from a conventional Si substrate as a starting material for a substrate, a caption 1 indicates a Si (111) single substrate, a caption 2 indicates an MnS layer (about 50 nm) formed on the single crystal substrate 1, a caption 3 depicts an AlN layer (about 1000 nm) formed on the MnS layer 2, and a caption 4 shows a GaN layer (about 100 nm) formed on the AlN layer and acting as a light emission layer. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2015014595A コンタクトプローブ及びその製造方法、非破壊的なコンタクト形成方法、多層膜の製造過程における測定方法並びにプローバー审中-公开
标题翻译：接触式探头及其制造方法，非接触式接触形成方法，制造过程中多层膜的测量方法和探针
公开(公告)号：JP2015014595A
公开(公告)日：2015-01-22
申请号：JP2014116359
申请日：2014-06-05
申请人：独立行政法人物質・材料研究機構 , National Institute For Materials Science
发明人： YOSHITAKE MICHIKO , YAGYU SHINJIRO , CHIKYO TOYOHIRO
IPC分类号： G01R1/067
摘要：【課題】nm厚の膜に対して非破壊的に接触させて測定を行うためのコンタクトプローブを与える。【解決手段】Wワイヤ—などの弾性体先端に表面が平滑なAu球等の接触部を設けたコンタクトプローブを使用し、Au球をnm厚の膜に載せて電気的コンタクトを取ることができる。Au球はWワイヤーにAu線を絡めた状態でWワイヤーに通電することで発生するジュール熱でAu線を一旦溶解してから凝固させて作製され、表面が極めてなめらかな球面を有する。これにより、大きな接触面に力を分散して接触させることができるので、接触圧力などのフィードバックなしで非破壊的な接触を実現することができる。【選択図】図8
摘要翻译：要解决的问题：提供一种用于与nm厚度的膜非破坏性地接触以进行测量的接触探针。解决方案：一种接触探针，其包括接触单元，例如具有光滑表面的Au球，其设置在使用诸如W线的弹性体通过将Au球放置在其上而与nm厚度的膜电接触。 Au球通过在与W线缠绕的情况下熔合AU线而产生，使用由流动电流通过W线产生的焦耳热，然后使其固化，并且具有非常光滑的球形表面。这允许通过力分散在大的接触表面上的接触，使得能够进行非破坏性接触而不需要反馈接触压力等。

5. 发明专利

JP2014039051A Metal electrode and semiconductor element using the same 有权
标题翻译：使用金属电极和半导体元件
公开(公告)号：JP2014039051A
公开(公告)日：2014-02-27
申请号：JP2013201187
申请日：2013-09-27
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： OMORI KENJI , CHIKYO TOYOHIRO
IPC分类号： H01L21/336 , C23C14/14 , H01L21/28 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L29/7833 , H01L21/28088 , H01L29/1083 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a metal electrode having stable flat band voltage and provide a semiconductor element using the metal electrode.SOLUTION: A metal electrode is used with a semiconductor as a pair across a high-dielectric thin film 9. The metal electrode 13 includes a metal film 11 formed by a first electrode material and a characteristic control film 10 containing Mo of 3 mol%-40 mol% and Ru of 60 mol%-90 mol%. The characteristic control film 10 is formed between the high-dielectric thin film 9 and the metal film 11. On a boundary face between the high-dielectric thin film 9 and the characteristic control film 10, a Mo oxide film is formed. With this configuration, flat band voltage is stabilized.
摘要翻译：要解决的问题：提供一种具有稳定的平带电压的金属电极，并提供使用金属电极的半导体元件。解决方案：金属电极与半导体一起使用在高电介质薄膜9上。金属电极图13包括由第一电极材料和含有3mol％-40mol％的Mo和60mol％-90mol％的Ru的特征控制膜10形成的金属膜11。特征控制膜10形成在高电介质薄膜9和金属膜11之间。在高电介质薄膜9和特性控制薄膜10之间的边界面上形成Mo氧化物膜。通过这种配置，平带电压稳定。

6. 发明专利

JP2004353072A Production method for dielectric 有权
公开(公告)号：JP2004353072A
公开(公告)日：2004-12-16
申请号：JP2003155771
申请日：2003-05-30
申请人： Fuji Electric Advanced Technology Co Ltd , National Institute For Materials Science , 富士電機アドバンストテクノロジー株式会社 , 独立行政法人物質・材料研究機構
发明人： KOINUMA HIDEOMI , WAKIZAKA TOSHIYUKI , CHIKYO TOYOHIRO , MIYAMOTO AKIRA , KONISHI YOSHINORI , YONEZAWA YOSHIYUKI , OSAWA MICHIO
IPC分类号： C23C14/08 , C23C14/28 , H01B3/12 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a method for easily producing a SnTiO 3 dielectric which is a non-lead non-bismuth ferroelectric, has characteristics not inferior to that of a lead ferroelectric, and does not badly influence a human body. SOLUTION: This method for producing a dielectric is a method for producing a SnTiO 3 dielectric having a perovskite structure and is based on a pulse laser sedimentation method using SnTiO 4 as the target. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2003007983A Dielectric thin film, ferroelectric memory and integrated circuit 有权
标题翻译：电介质薄膜，电磁记忆体和集成电路
公开(公告)号：JP2003007983A
公开(公告)日：2003-01-10
申请号：JP2001189808
申请日：2001-06-22
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： CHIKYO TOYOHIRO , PARHAT AHMET
IPC分类号： H01L21/8247 , H01L21/8246 , H01L27/105 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a new dielectric thin film which can realize a highly stable dielectric/semiconductor structure, to provide a new ferroelectric memory, and to provide a new integrated circuit.
SOLUTION: The dielectric thin film is formed on a semiconductor substrate, and a monoatomic carbon film is formed between itself and the semiconductor substrate.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供能够实现高稳定性的电介质/半导体结构的新的介电薄膜，提供新的铁电存储器，并提供新的集成电路。解决方案：电介质薄膜形成在半导体衬底上，并且在其本身与半导体衬底之间形成单原子碳膜。

8. 发明专利

JP2009287069A Apparatus for manufacturing multi-compound 审中-公开
标题翻译：制造多元化合物的装置
公开(公告)号：JP2009287069A
公开(公告)日：2009-12-10
申请号：JP2008139667
申请日：2008-05-28
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： OSADA TAKAHIRO , CHIKYO TOYOHIRO , MINAMIKAZE MASAMITSU
IPC分类号： C23C14/54 , C23C14/04 , C23C14/24 , C23C14/56 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a multi-compound, capable of forming a multi-compound with high precision composition ratio change by a single vapor deposition, in consideration of the recent situation.
SOLUTION: The apparatus for manufacturing a multi-compound has a material evaporating mechanism for evaporating a vapor deposition material, a substrate holding part for holding a substrate being deposited by vapor from the material evaporating mechanism, a mask which is arranged between the substrate holding part and the material evaporating mechanism and has an opening part for the passage of vapor, and a mask moving mechanism for moving the mask along the vapor deposition surface of the substrate, in one vapor deposition chamber, wherein a space adjusting means for adjusting the space from the vapor deposition surface is provided on the mask and the substrate.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：考虑到最近的情况，提供一种能够通过单次蒸镀沉积形成高精度组成比变化的多化合物的制造装置。解决方案：多组合物的制造装置具有用于蒸发蒸镀材料的材料蒸发机构，用于保持从蒸发机构蒸镀而沉积的基板的基板保持部，基板保持部和材料蒸发机构，具有用于蒸气通过的开口部，以及用于在一个蒸镀室中沿着基板的蒸镀面移动掩模的掩模移动机构，其特征在于，在掩模和基板上设置来自气相沉积表面的空间。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009238504A Method for forming cone emitter 有权
标题翻译：形成发光体的方法
公开(公告)号：JP2009238504A
公开(公告)日：2009-10-15
申请号：JP2008081441
申请日：2008-03-26
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： KOMATSU SHOJIRO , CHIKYO TOYOHIRO , SATO YUHEI , HIRANO DAISUKE
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To easily control a cone emitter distribution while simplifying manufacturing procedures by reducing control parameters in processes.
SOLUTION: A method for forming a cone emitter on the top surface of a BN thin film performs the crystallization by irradiating the ultraviolet light onto the top surface of the amorphous BN thin film that is formed on the top surface of a substrate and has a flat top surface.
COPYRIGHT: (C)2010,JPO&INPIT

10. 发明专利

JP2008255471A Method of forming film of group iii nitride such as gallium nitride 有权
标题翻译：形成III类氮化物膜的方法作为氮化镓
公开(公告)号：JP2008255471A
公开(公告)日：2008-10-23
申请号：JP2008047384
申请日：2008-02-28
申请人： National Institute For Materials Science , Sekisui Chem Co Ltd , 独立行政法人物質・材料研究機構 , 積水化学工業株式会社
发明人： OSADA TAKAHIRO , CHIKYO TOYOHIRO , UEHARA TAKESHI , ANZAI JUNICHIRO
IPC分类号： C23C16/34 , H01L21/205
CPC分类号： C23C16/303 , C30B25/105 , C30B29/406 , H01L21/0237 , H01L21/02403 , H01L21/0242 , H01L21/02488 , H01L21/0254 , H01L21/0262
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a film of gallium nitride, in which even at low substrate temperature, less carbon contamination and appropriate crystallinity can be attained.
SOLUTION: Simultaneously with introduction of a process gas containing TMG being an organogallium compound, nitrogen (N
2 ) and hydrogen (H
2 ) in a space between a pair of electrodes (12H, 12E) under a pressure close to atmospheric pressure, and electric field is applied between the electrodes (12H, 12E) so as to induce electric discharge. The process gas after the electric discharge is brought into contact with a substrate (90). During film formation, the temperature of the substrate is set at 100 to 400°C.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成氮化镓的膜的方法，其中即使在低的基板温度下也可以获得较少的碳污染和适当的结晶度。解决方案：在引入含有作为有机镓化合物的TMG的工艺气体的同时，在对之间的空间中引入氮（N 2 SB 2）和氢（H 2 SB 2）的电极（12H，12E），并且在电极（12H，12E）之间施加电场以引起放电。放电后的处理气体与基板（90）接触。在成膜期间，将基板的温度设定为100〜400℃。版权所有（C）2009，JPO＆INPIT

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